JPH0142128B2 - - Google Patents
Info
- Publication number
- JPH0142128B2 JPH0142128B2 JP62078250A JP7825087A JPH0142128B2 JP H0142128 B2 JPH0142128 B2 JP H0142128B2 JP 62078250 A JP62078250 A JP 62078250A JP 7825087 A JP7825087 A JP 7825087A JP H0142128 B2 JPH0142128 B2 JP H0142128B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- diffusion layer
- pattern
- alignment
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 description 9
- 230000000295 complement effect Effects 0.000 description 8
- 230000010354 integration Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62078250A JPS62271429A (ja) | 1987-03-31 | 1987-03-31 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62078250A JPS62271429A (ja) | 1987-03-31 | 1987-03-31 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59183892A Division JPS6074435A (ja) | 1984-09-03 | 1984-09-03 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62271429A JPS62271429A (ja) | 1987-11-25 |
| JPH0142128B2 true JPH0142128B2 (en, 2012) | 1989-09-11 |
Family
ID=13656752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62078250A Granted JPS62271429A (ja) | 1987-03-31 | 1987-03-31 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62271429A (en, 2012) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02213117A (ja) * | 1989-02-14 | 1990-08-24 | Matsushita Electron Corp | 半導体装置のマスク合せ方法 |
| JPH04294329A (ja) * | 1991-03-22 | 1992-10-19 | G T C:Kk | 液晶表示装置およびその製造方法 |
-
1987
- 1987-03-31 JP JP62078250A patent/JPS62271429A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62271429A (ja) | 1987-11-25 |
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