JPH0142125B2 - - Google Patents
Info
- Publication number
- JPH0142125B2 JPH0142125B2 JP55001176A JP117680A JPH0142125B2 JP H0142125 B2 JPH0142125 B2 JP H0142125B2 JP 55001176 A JP55001176 A JP 55001176A JP 117680 A JP117680 A JP 117680A JP H0142125 B2 JPH0142125 B2 JP H0142125B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- amorphous silicon
- amorphous
- electric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 19
- 230000005684 electric field Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000000354 decomposition reaction Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 26
- 239000007789 gas Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP117680A JPS5698820A (en) | 1980-01-09 | 1980-01-09 | Preparation of amorphous semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP117680A JPS5698820A (en) | 1980-01-09 | 1980-01-09 | Preparation of amorphous semiconductor film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698820A JPS5698820A (en) | 1981-08-08 |
| JPH0142125B2 true JPH0142125B2 (ko) | 1989-09-11 |
Family
ID=11494122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP117680A Granted JPS5698820A (en) | 1980-01-09 | 1980-01-09 | Preparation of amorphous semiconductor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698820A (ko) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212128A (ja) * | 1982-06-03 | 1983-12-09 | Shigeru Minomura | アモルフアス半導体膜の製造方法 |
| JPS58212129A (ja) * | 1982-06-03 | 1983-12-09 | Anelva Corp | アモルフアス半導体膜の製造方法 |
| JPS5939713A (ja) * | 1982-08-29 | 1984-03-05 | Agency Of Ind Science & Technol | シリコン薄膜及びその製造方法 |
| JPS5988821A (ja) * | 1982-11-13 | 1984-05-22 | Toa Nenryo Kogyo Kk | 非晶質シリコン半導体薄膜の製造方法 |
| JPS60117715A (ja) * | 1983-11-30 | 1985-06-25 | Zenko Hirose | 成膜方法 |
| JPH077745B2 (ja) * | 1984-01-11 | 1995-01-30 | 株式会社ダイヘン | 光起電力素子の製造装置 |
| JPS60239015A (ja) * | 1984-05-11 | 1985-11-27 | Toyobo Co Ltd | アモルフアスシリコン膜の形成方法 |
| JPS61278131A (ja) * | 1985-06-03 | 1986-12-09 | Agency Of Ind Science & Technol | シリコン系合金薄膜の製造方法 |
-
1980
- 1980-01-09 JP JP117680A patent/JPS5698820A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698820A (en) | 1981-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2579900B2 (ja) | アモルフアス半導体膜の堆積方法 | |
| KR100797018B1 (ko) | 반도체박막, 그것을 사용한 반도체장치, 그들의 제조방법및 반도체박막의 제조장치 | |
| US20080188062A1 (en) | Method of forming microcrystalline silicon film | |
| JPH06105691B2 (ja) | 炭素添加非晶質シリコン薄膜の製造方法 | |
| WO2000044033A1 (fr) | Procede et appareil de depot de film | |
| JP4557400B2 (ja) | 堆積膜形成方法 | |
| JPS63197329A (ja) | プラズマ・チャンバー内で、無定形水素化シリコンを基板へ付着させる方法 | |
| US4446168A (en) | Method of forming amorphous silicon | |
| JPH0143449B2 (ko) | ||
| JPH0142125B2 (ko) | ||
| KR920000591B1 (ko) | 마이크로파 강화 cvd시스템 | |
| JPH0992860A (ja) | 光起電力素子 | |
| JP3106810B2 (ja) | 非晶質酸化シリコン薄膜の生成方法 | |
| JPH0544198B2 (ko) | ||
| JP2588446B2 (ja) | 半導体装置 | |
| JP4841735B2 (ja) | 成膜方法 | |
| Oda et al. | High quality a-Si: H films and interfaces prepared by VHF plasma CVD | |
| JP3274099B2 (ja) | 太陽電池の製造方法 | |
| JP3078373B2 (ja) | 光電変換装置とその製造方法 | |
| JPH09199426A (ja) | 微結晶シリコン系半導体薄膜の製造方法 | |
| CN102021538A (zh) | 薄膜沉积方法 | |
| JP4282047B2 (ja) | プラズマ処理装置および半導体装置の製造方法 | |
| US20020039832A1 (en) | Thin film formation method | |
| JPS6332863B2 (ko) | ||
| JPH0612836B2 (ja) | 光電変換素子の製造方法 |