JPH0138384B2 - - Google Patents

Info

Publication number
JPH0138384B2
JPH0138384B2 JP57076450A JP7645082A JPH0138384B2 JP H0138384 B2 JPH0138384 B2 JP H0138384B2 JP 57076450 A JP57076450 A JP 57076450A JP 7645082 A JP7645082 A JP 7645082A JP H0138384 B2 JPH0138384 B2 JP H0138384B2
Authority
JP
Japan
Prior art keywords
emitter
base layer
region
semiconductor
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57076450A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57194574A (en
Inventor
Shutoijiiku Mihiaeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS57194574A publication Critical patent/JPS57194574A/ja
Publication of JPH0138384B2 publication Critical patent/JPH0138384B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP7645082A 1981-05-08 1982-05-07 Thyristor Granted JPS57194574A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813118354 DE3118354A1 (de) 1981-05-08 1981-05-08 Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
JPS57194574A JPS57194574A (en) 1982-11-30
JPH0138384B2 true JPH0138384B2 (de) 1989-08-14

Family

ID=6131828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7645082A Granted JPS57194574A (en) 1981-05-08 1982-05-07 Thyristor

Country Status (3)

Country Link
EP (1) EP0065174B1 (de)
JP (1) JPS57194574A (de)
DE (1) DE3118354A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3230741A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Halbleiterschalter mit einem abschaltbaren thyristor
DE3330022A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Thyristor
DE3435550A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit erhoehter di/dt-festigkeit
JP4930342B2 (ja) * 2007-11-19 2012-05-16 中西金属工業株式会社 窓開閉装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235586A (en) * 1975-09-12 1977-03-18 Mitsubishi Electric Corp Semiconductor device
JPS5245288A (en) * 1975-06-19 1977-04-09 Asea Ab Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (de) * 1962-06-11
DE2835089A1 (de) * 1978-08-10 1980-03-20 Siemens Ag Thyristor
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245288A (en) * 1975-06-19 1977-04-09 Asea Ab Semiconductor device
JPS5235586A (en) * 1975-09-12 1977-03-18 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS57194574A (en) 1982-11-30
DE3118354A1 (de) 1982-11-25
EP0065174A2 (de) 1982-11-24
EP0065174B1 (de) 1988-05-11
EP0065174A3 (en) 1983-09-14

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