JPH0142510B2 - - Google Patents
Info
- Publication number
- JPH0142510B2 JPH0142510B2 JP57075947A JP7594782A JPH0142510B2 JP H0142510 B2 JPH0142510 B2 JP H0142510B2 JP 57075947 A JP57075947 A JP 57075947A JP 7594782 A JP7594782 A JP 7594782A JP H0142510 B2 JPH0142510 B2 JP H0142510B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- emitter
- mis
- base layer
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 52
- 238000010304 firing Methods 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 description 9
- 230000000087 stabilizing effect Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813118347 DE3118347A1 (de) | 1981-05-08 | 1981-05-08 | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57193059A JPS57193059A (en) | 1982-11-27 |
JPH0142510B2 true JPH0142510B2 (de) | 1989-09-13 |
Family
ID=6131827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7594782A Granted JPS57193059A (en) | 1981-05-08 | 1982-05-06 | Thyristor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS57193059A (de) |
DE (1) | DE3118347A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
DE3447220A1 (de) * | 1983-12-30 | 1985-07-11 | General Electric Co., Schenectady, N.Y. | Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung |
FR2568724A1 (fr) * | 1984-08-03 | 1986-02-07 | Centre Nat Rech Scient | Composant semi-conducteur de puissance a tension de claquage elevee |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
JPS61125173A (ja) * | 1984-11-22 | 1986-06-12 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
DE3855922T2 (de) * | 1987-02-26 | 1998-01-02 | Toshiba Kawasaki Kk | An-Steuertechnik für Thyristor mit isolierter Steuerelektrode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5235586A (en) * | 1975-09-12 | 1977-03-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS5245288A (en) * | 1975-06-19 | 1977-04-09 | Asea Ab | Semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (de) * | 1962-06-11 | |||
DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
-
1981
- 1981-05-08 DE DE19813118347 patent/DE3118347A1/de active Granted
-
1982
- 1982-05-06 JP JP7594782A patent/JPS57193059A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5245288A (en) * | 1975-06-19 | 1977-04-09 | Asea Ab | Semiconductor device |
JPS5235586A (en) * | 1975-09-12 | 1977-03-18 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE3118347A1 (de) | 1982-11-25 |
DE3118347C2 (de) | 1990-02-01 |
JPS57193059A (en) | 1982-11-27 |
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