JPS57193059A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS57193059A
JPS57193059A JP7594782A JP7594782A JPS57193059A JP S57193059 A JPS57193059 A JP S57193059A JP 7594782 A JP7594782 A JP 7594782A JP 7594782 A JP7594782 A JP 7594782A JP S57193059 A JPS57193059 A JP S57193059A
Authority
JP
Japan
Prior art keywords
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7594782A
Other languages
Japanese (ja)
Other versions
JPH0142510B2 (en
Inventor
Shiyupenke Eeberuharuto
Shiyutoia Furantsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of JPS57193059A publication Critical patent/JPS57193059A/en
Publication of JPH0142510B2 publication Critical patent/JPH0142510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
JP7594782A 1981-05-08 1982-05-06 Thyristor Granted JPS57193059A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813118347 DE3118347A1 (en) 1981-05-08 1981-05-08 Thyristor having gate-controlled MISFET structures of the depletion type and method of operating it

Publications (2)

Publication Number Publication Date
JPS57193059A true JPS57193059A (en) 1982-11-27
JPH0142510B2 JPH0142510B2 (en) 1989-09-13

Family

ID=6131827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7594782A Granted JPS57193059A (en) 1981-05-08 1982-05-06 Thyristor

Country Status (2)

Country Link
JP (1) JPS57193059A (en)
DE (1) DE3118347A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180166A (en) * 1983-12-30 1985-09-13 ゼネラル・エレクトリツク・カンパニイ Thyristor having turn off capacity and improved emitter region and method of producing same
JPS6188563A (en) * 1984-10-08 1986-05-06 Toshiba Corp Semiconductor switch
JPS61125173A (en) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230741A1 (en) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR SWITCH WITH A DISABLE THYRISTOR
FR2568724A1 (en) * 1984-08-03 1986-02-07 Centre Nat Rech Scient Semiconductor power component with high breakdown voltage
EP0280536B1 (en) * 1987-02-26 1997-05-28 Kabushiki Kaisha Toshiba Turn-on driving technique for insulated gate thyristor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235586A (en) * 1975-09-12 1977-03-18 Mitsubishi Electric Corp Semiconductor device
JPS5245288A (en) * 1975-06-19 1977-04-09 Asea Ab Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (en) * 1962-06-11
DE2825794C2 (en) * 1978-06-13 1986-03-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Switchable thyristor
DE2945324A1 (en) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH IMPROVED SWITCHING BEHAVIOR

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245288A (en) * 1975-06-19 1977-04-09 Asea Ab Semiconductor device
JPS5235586A (en) * 1975-09-12 1977-03-18 Mitsubishi Electric Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60180166A (en) * 1983-12-30 1985-09-13 ゼネラル・エレクトリツク・カンパニイ Thyristor having turn off capacity and improved emitter region and method of producing same
JPS6188563A (en) * 1984-10-08 1986-05-06 Toshiba Corp Semiconductor switch
JPS61125173A (en) * 1984-11-22 1986-06-12 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor

Also Published As

Publication number Publication date
JPH0142510B2 (en) 1989-09-13
DE3118347C2 (en) 1990-02-01
DE3118347A1 (en) 1982-11-25

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