JPH0138379B2 - - Google Patents

Info

Publication number
JPH0138379B2
JPH0138379B2 JP57141404A JP14140482A JPH0138379B2 JP H0138379 B2 JPH0138379 B2 JP H0138379B2 JP 57141404 A JP57141404 A JP 57141404A JP 14140482 A JP14140482 A JP 14140482A JP H0138379 B2 JPH0138379 B2 JP H0138379B2
Authority
JP
Japan
Prior art keywords
region
type
diode
conductivity type
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57141404A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5931059A (ja
Inventor
Yasuo Kamya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57141404A priority Critical patent/JPS5931059A/ja
Publication of JPS5931059A publication Critical patent/JPS5931059A/ja
Publication of JPH0138379B2 publication Critical patent/JPH0138379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57141404A 1982-08-13 1982-08-13 半導体装置 Granted JPS5931059A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57141404A JPS5931059A (ja) 1982-08-13 1982-08-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141404A JPS5931059A (ja) 1982-08-13 1982-08-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS5931059A JPS5931059A (ja) 1984-02-18
JPH0138379B2 true JPH0138379B2 (enrdf_load_stackoverflow) 1989-08-14

Family

ID=15291209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141404A Granted JPS5931059A (ja) 1982-08-13 1982-08-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS5931059A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4231829A1 (de) * 1992-09-23 1994-03-24 Telefunken Microelectron Planares Halbleiterbauteil

Also Published As

Publication number Publication date
JPS5931059A (ja) 1984-02-18

Similar Documents

Publication Publication Date Title
US4400711A (en) Integrated circuit protection device
US5548134A (en) Device for the protection of an integrated circuit against electrostatic discharges
JPH0563949B2 (enrdf_load_stackoverflow)
JPS6358380B2 (enrdf_load_stackoverflow)
US5502338A (en) Power transistor device having collector voltage clamped to stable level over wide temperature range
US4543593A (en) Semiconductor protective device
JP3146579B2 (ja) プログラマブル過電圧保護回路
JPH0324791B2 (enrdf_load_stackoverflow)
JPH0262966B2 (enrdf_load_stackoverflow)
US4103181A (en) Monolithic integrated transistor and protective circuit therefor
JP2553037B2 (ja) 高出力集積回路装置
US3230429A (en) Integrated transistor, diode and resistance semiconductor network
US4260910A (en) Integrated circuits with built-in power supply protection
JPH0550852B2 (enrdf_load_stackoverflow)
JPS5967670A (ja) 半導体装置
JPH0378787B2 (enrdf_load_stackoverflow)
JP2003060059A (ja) 保護回路および保護素子
US4922316A (en) Infant protection device
JPH0138379B2 (enrdf_load_stackoverflow)
EP0730300A1 (en) Device for the protection of an integrated circuit against electrostatic discharges
JPH0581066B2 (enrdf_load_stackoverflow)
JPS6211787B2 (enrdf_load_stackoverflow)
JP2650180B2 (ja) ２方向性２端子サイリスタ
RU2024995C1 (ru) Интегральный транзистор, устойчивый к обратному вторичному пробою
JPS6410101B2 (enrdf_load_stackoverflow)