JPS5931059A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5931059A
JPS5931059A JP57141404A JP14140482A JPS5931059A JP S5931059 A JPS5931059 A JP S5931059A JP 57141404 A JP57141404 A JP 57141404A JP 14140482 A JP14140482 A JP 14140482A JP S5931059 A JPS5931059 A JP S5931059A
Authority
JP
Japan
Prior art keywords
region
collector
collector region
base
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57141404A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0138379B2 (enrdf_load_stackoverflow
Inventor
Yasuo Kamiya
神谷　康夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57141404A priority Critical patent/JPS5931059A/ja
Publication of JPS5931059A publication Critical patent/JPS5931059A/ja
Publication of JPH0138379B2 publication Critical patent/JPH0138379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57141404A 1982-08-13 1982-08-13 半導体装置 Granted JPS5931059A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57141404A JPS5931059A (ja) 1982-08-13 1982-08-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141404A JPS5931059A (ja) 1982-08-13 1982-08-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS5931059A true JPS5931059A (ja) 1984-02-18
JPH0138379B2 JPH0138379B2 (enrdf_load_stackoverflow) 1989-08-14

Family

ID=15291209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141404A Granted JPS5931059A (ja) 1982-08-13 1982-08-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS5931059A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0589210A1 (de) * 1992-09-23 1994-03-30 TEMIC TELEFUNKEN microelectronic GmbH Planares Halbleiterbauteil

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0589210A1 (de) * 1992-09-23 1994-03-30 TEMIC TELEFUNKEN microelectronic GmbH Planares Halbleiterbauteil
US5410177A (en) * 1992-09-23 1995-04-25 Temic Telefunken Microelectronic Gmbh Planar semiconductor and Zener diode device with channel stopper region

Also Published As

Publication number Publication date
JPH0138379B2 (enrdf_load_stackoverflow) 1989-08-14

Similar Documents

Publication Publication Date Title
US4595941A (en) Protection circuit for integrated circuit devices
US4100561A (en) Protective circuit for MOS devices
US5903424A (en) Method for protecting an integrated circuit against electro-static discharges
US4963970A (en) Vertical MOSFET device having protector
JPH0563949B2 (enrdf_load_stackoverflow)
JPS59155964A (ja) 過電流保護装置
JPH0262966B2 (enrdf_load_stackoverflow)
US4888623A (en) Semiconductor device with PN junction isolation for TTL or ECL circuits
US4189739A (en) Semiconductor overload protection structure
JP2004356622A (ja) 接合型電子部品および前記電子部品を含む集積された電力装置
JP2722453B2 (ja) 半導体装置
JPS5967670A (ja) 半導体装置
JPS5931059A (ja) 半導体装置
US4922316A (en) Infant protection device
JPS5852347B2 (ja) 高耐圧半導体装置
JPH05129598A (ja) パワーデバイスの過熱検出回路
JP4457620B2 (ja) 静電破壊保護回路
US3958268A (en) Thyristor highly proof against time rate of change of voltage
JPS6211787B2 (enrdf_load_stackoverflow)
JP2940377B2 (ja) ２方向性２端子サイリスタ
JPS59189665A (ja) 半導体装置
RU2024995C1 (ru) Интегральный транзистор, устойчивый к обратному вторичному пробою
JPH0888326A (ja) 半導体装置の静電気保護構造
JPH0638419B2 (ja) 半導体装置
JPH0738054A (ja) 半導体装置