JPH0137851B2 - - Google Patents
Info
- Publication number
- JPH0137851B2 JPH0137851B2 JP55177245A JP17724580A JPH0137851B2 JP H0137851 B2 JPH0137851 B2 JP H0137851B2 JP 55177245 A JP55177245 A JP 55177245A JP 17724580 A JP17724580 A JP 17724580A JP H0137851 B2 JPH0137851 B2 JP H0137851B2
- Authority
- JP
- Japan
- Prior art keywords
- curvature
- support layer
- semiconductor
- single crystal
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 93
- 239000010703 silicon Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 67
- 239000013078 crystal Substances 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 238000002955 isolation Methods 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000002265 prevention Effects 0.000 claims description 14
- 230000008595 infiltration Effects 0.000 claims description 7
- 238000001764 infiltration Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 150000002926 oxygen Chemical class 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 92
- 238000010438 heat treatment Methods 0.000 description 24
- 239000012535 impurity Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
- 239000007789 gas Substances 0.000 description 15
- 238000000926 separation method Methods 0.000 description 12
- 238000005498 polishing Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17724580A JPS57102044A (en) | 1980-12-17 | 1980-12-17 | Insulating isolation substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17724580A JPS57102044A (en) | 1980-12-17 | 1980-12-17 | Insulating isolation substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57102044A JPS57102044A (en) | 1982-06-24 |
| JPH0137851B2 true JPH0137851B2 (ru) | 1989-08-09 |
Family
ID=16027684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17724580A Granted JPS57102044A (en) | 1980-12-17 | 1980-12-17 | Insulating isolation substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57102044A (ru) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6446347U (ru) * | 1987-09-18 | 1989-03-22 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081061A (en) * | 1990-02-23 | 1992-01-14 | Harris Corporation | Manufacturing ultra-thin dielectrically isolated wafers |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51131280A (en) * | 1975-05-12 | 1976-11-15 | Hitachi Ltd | Dielectric insulation separation base manufacturing process |
-
1980
- 1980-12-17 JP JP17724580A patent/JPS57102044A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51131280A (en) * | 1975-05-12 | 1976-11-15 | Hitachi Ltd | Dielectric insulation separation base manufacturing process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6446347U (ru) * | 1987-09-18 | 1989-03-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57102044A (en) | 1982-06-24 |
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