JPH0136249B2 - - Google Patents
Info
- Publication number
- JPH0136249B2 JPH0136249B2 JP3882A JP3882A JPH0136249B2 JP H0136249 B2 JPH0136249 B2 JP H0136249B2 JP 3882 A JP3882 A JP 3882A JP 3882 A JP3882 A JP 3882A JP H0136249 B2 JPH0136249 B2 JP H0136249B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- etching
- wire
- aluminum
- electrode connector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- 229920001971 elastomer Polymers 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920001973 fluoroelastomer Polymers 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000012806 monitoring device Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3882A JPS58118116A (ja) | 1982-01-05 | 1982-01-05 | 電極コネクタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3882A JPS58118116A (ja) | 1982-01-05 | 1982-01-05 | 電極コネクタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118116A JPS58118116A (ja) | 1983-07-14 |
| JPH0136249B2 true JPH0136249B2 (enrdf_load_stackoverflow) | 1989-07-31 |
Family
ID=11463149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3882A Granted JPS58118116A (ja) | 1982-01-05 | 1982-01-05 | 電極コネクタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118116A (enrdf_load_stackoverflow) |
-
1982
- 1982-01-05 JP JP3882A patent/JPS58118116A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58118116A (ja) | 1983-07-14 |
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