JPH0132666B2 - - Google Patents

Info

Publication number
JPH0132666B2
JPH0132666B2 JP10663980A JP10663980A JPH0132666B2 JP H0132666 B2 JPH0132666 B2 JP H0132666B2 JP 10663980 A JP10663980 A JP 10663980A JP 10663980 A JP10663980 A JP 10663980A JP H0132666 B2 JPH0132666 B2 JP H0132666B2
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
emitter
conductivity type
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10663980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5731173A (en
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP10663980A priority Critical patent/JPS5731173A/ja
Publication of JPS5731173A publication Critical patent/JPS5731173A/ja
Publication of JPH0132666B2 publication Critical patent/JPH0132666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP10663980A 1980-08-01 1980-08-01 Semiconductor device Granted JPS5731173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10663980A JPS5731173A (en) 1980-08-01 1980-08-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10663980A JPS5731173A (en) 1980-08-01 1980-08-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5731173A JPS5731173A (en) 1982-02-19
JPH0132666B2 true JPH0132666B2 (US20030204162A1-20031030-M00001.png) 1989-07-10

Family

ID=14438680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10663980A Granted JPS5731173A (en) 1980-08-01 1980-08-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731173A (US20030204162A1-20031030-M00001.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638471B2 (ja) * 1987-02-09 1994-05-18 三菱電機株式会社 半導体装置
JPH088261B2 (ja) * 1988-11-17 1996-01-29 三洋電機株式会社 半導体集積回路

Also Published As

Publication number Publication date
JPS5731173A (en) 1982-02-19

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