JPH0131289B2 - - Google Patents

Info

Publication number
JPH0131289B2
JPH0131289B2 JP57207379A JP20737982A JPH0131289B2 JP H0131289 B2 JPH0131289 B2 JP H0131289B2 JP 57207379 A JP57207379 A JP 57207379A JP 20737982 A JP20737982 A JP 20737982A JP H0131289 B2 JPH0131289 B2 JP H0131289B2
Authority
JP
Japan
Prior art keywords
hydrogen
silicon
gas
ions
torr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57207379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5996721A (ja
Inventor
Kazuaki Myamoto
Toshio Kamisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP57207379A priority Critical patent/JPS5996721A/ja
Publication of JPS5996721A publication Critical patent/JPS5996721A/ja
Publication of JPH0131289B2 publication Critical patent/JPH0131289B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP57207379A 1982-11-25 1982-11-25 薄膜半導体の製造方法 Granted JPS5996721A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57207379A JPS5996721A (ja) 1982-11-25 1982-11-25 薄膜半導体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57207379A JPS5996721A (ja) 1982-11-25 1982-11-25 薄膜半導体の製造方法

Publications (2)

Publication Number Publication Date
JPS5996721A JPS5996721A (ja) 1984-06-04
JPH0131289B2 true JPH0131289B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-06-26

Family

ID=16538750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57207379A Granted JPS5996721A (ja) 1982-11-25 1982-11-25 薄膜半導体の製造方法

Country Status (1)

Country Link
JP (1) JPS5996721A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191918A (ja) * 1984-10-11 1986-05-10 Futaba Corp 化合物薄膜の製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837247B2 (ja) * 1979-11-27 1983-08-15 コニカ株式会社 アモルフアスシリコンの製造方法
JPS577116A (en) * 1980-06-16 1982-01-14 Matsushita Electric Ind Co Ltd Manufacture of amorphous silicon thin film
JPS5730325A (en) * 1980-07-30 1982-02-18 Nec Corp Manufacture of amorphous silicon thin film
JPS5754930A (en) * 1980-09-20 1982-04-01 Minolta Camera Co Ltd Exposure controlling circuit of camera

Also Published As

Publication number Publication date
JPS5996721A (ja) 1984-06-04

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