JPH0131288B2 - - Google Patents

Info

Publication number
JPH0131288B2
JPH0131288B2 JP55121563A JP12156380A JPH0131288B2 JP H0131288 B2 JPH0131288 B2 JP H0131288B2 JP 55121563 A JP55121563 A JP 55121563A JP 12156380 A JP12156380 A JP 12156380A JP H0131288 B2 JPH0131288 B2 JP H0131288B2
Authority
JP
Japan
Prior art keywords
single crystal
layer
region corresponding
energy ray
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55121563A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5745920A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55121563A priority Critical patent/JPS5745920A/ja
Publication of JPS5745920A publication Critical patent/JPS5745920A/ja
Publication of JPH0131288B2 publication Critical patent/JPH0131288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/42—

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP55121563A 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission Granted JPS5745920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121563A JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121563A JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Publications (2)

Publication Number Publication Date
JPS5745920A JPS5745920A (en) 1982-03-16
JPH0131288B2 true JPH0131288B2 (cg-RX-API-DMAC10.html) 1989-06-26

Family

ID=14814324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121563A Granted JPS5745920A (en) 1980-09-02 1980-09-02 Forming method for semiconductor single crystal by energy beam emission

Country Status (1)

Country Link
JP (1) JPS5745920A (cg-RX-API-DMAC10.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121825A (ja) * 1982-12-28 1984-07-14 Agency Of Ind Science & Technol 半導体薄膜の製造方法
JPS59208820A (ja) * 1983-05-13 1984-11-27 Seiko Epson Corp 半導体装置の製造方法
JPS60246621A (ja) * 1984-05-22 1985-12-06 Agency Of Ind Science & Technol シリコン結晶層の製造方法
JPS614899A (ja) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd エゼクタ装置
JPS614900A (ja) * 1984-06-18 1986-01-10 Shoketsu Kinzoku Kogyo Co Ltd エゼクタ装置
JPH0793263B2 (ja) * 1987-04-23 1995-10-09 工業技術院長 半導体単結晶層の製造方法
JPH0693428B2 (ja) * 1987-12-04 1994-11-16 工業技術院長 多層半導体基板の製造方法
JPH0834179B2 (ja) * 1988-09-12 1996-03-29 工業技術院長 半導体単結晶薄膜の形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS=1966 *

Also Published As

Publication number Publication date
JPS5745920A (en) 1982-03-16

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