JPH01302870A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- JPH01302870A JPH01302870A JP63133788A JP13378888A JPH01302870A JP H01302870 A JPH01302870 A JP H01302870A JP 63133788 A JP63133788 A JP 63133788A JP 13378888 A JP13378888 A JP 13378888A JP H01302870 A JPH01302870 A JP H01302870A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- bias voltage
- semiconductor layer
- metal electrodes
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000001782 photodegradation Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業の利用分野〕
本発明は光学的測定装置、光スイツチング素子などに用
いられる光センサーに関するものであり、特にＰ−１−
Ｎ接合の非晶質半導体層を用いた光センサーである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an optical sensor used in an optical measuring device, an optical switching element, etc., and particularly relates to a P-1-
This is an optical sensor using an N-junction amorphous semiconductor layer.
非晶質半導体層は現在太陽電池、感光体ドラム、光セン
サーなどの光電変換装置、光デバイスに幅広くもちいら
れている。Amorphous semiconductor layers are currently widely used in photoelectric conversion devices and optical devices such as solar cells, photosensitive drums, and optical sensors.
非晶質半導体層の層構成の一例として、光キャリア（正
孔や電子）生成層（一般に１層）の両側にＰ層とＮ層と
を配置したＰ−１−Ｎ接合したものがあり、光照射によ
り発生したキャリアを収集し、光起電力として発生して
いた。An example of the layer structure of an amorphous semiconductor layer is a P-1-N junction in which a P layer and an N layer are placed on both sides of a photocarrier (hole or electron) generation layer (generally one layer). Carriers generated by light irradiation were collected and generated as photovoltaic force.
光電変換装置である光センサーは、この光起電力により
発生する光電流の量を検出し、入射光の強度を読み取る
フォトダイオド−型光センサーがあった。The optical sensor, which is a photoelectric conversion device, is a photodiode type optical sensor that detects the amount of photocurrent generated by this photovoltaic force and reads the intensity of incident light.
また、Ｐ−１−Ｎ接合した非晶質半導体層を有する積層
体のダイオードが互いに逆向きに抱き合わされ、両積層
体間にバイアス電圧を印加する抱き合わせタイプの光セ
ンサ−（特願昭６２−３３１６２０号）などがあった。In addition, a tying-type optical sensor (Japanese Patent Application No. 1983-1981) is used in which diodes of a stacked body having P-1-N junction amorphous semiconductor layers are tied together in opposite directions, and a bias voltage is applied between both stacked bodies. 331620).
従来からＰ−１−Ｎ接合した非晶質半導体層を有する光
センサーは、非晶質半導体層がせいぜい１μｍ程度であ
ることから耐圧信頼性が悪く、１■以下程度の低いバイ
アス電圧を印加して使用していた。 また、Ｐ−Ｉ−Ｎ
接合した非晶質半導体層は、光照射により、スティブラ
ー・ロンスキル効果と言われる光劣化現象があり、初期
特性が２０〜５０％も低下することが知られていた。Conventionally, optical sensors having an amorphous semiconductor layer in a P-1-N junction have poor breakdown voltage reliability because the amorphous semiconductor layer is about 1 μm at most, and a low bias voltage of about 1 μm or less cannot be applied. I was using it. Also, P-I-N
It has been known that the bonded amorphous semiconductor layer undergoes a photodegradation phenomenon called the Stibler-Ronskill effect when exposed to light, and its initial characteristics decrease by as much as 20 to 50%.
これは、太陽電池のみならず光センサーとしても、光照
射による局在準位密度の増大に伴う光導電率の低下現象
を招くものであった。This leads to a phenomenon in which the photoconductivity decreases not only in solar cells but also in optical sensors due to the increase in localized level density due to light irradiation.
これらのことにより、光センサーなどの光電変換装置は
、使用経過に応じて特性が変化していくために、使用範
囲を大き（狭めてしまい、大きな欠点であった。Due to these factors, the characteristics of photoelectric conversion devices such as optical sensors change as they are used, which increases (or narrows) the range of use, which is a major drawback.
そこで、本発明者は、鋭息研沿し、Ｐ−１−Ｎ接合した
非晶質半導体Ｊ―を有する抱き合わせタイプの光センサ
ーにおいて、−船釣に用いられるバイアス電圧の印加の
条件を変えることにより、光劣化現象を改善できること
を知見した。Therefore, the present inventor developed a combination type optical sensor having a P-1-N junction of an amorphous semiconductor J by changing the conditions for applying a bias voltage used in boat fishing. It was found that the photodegradation phenomenon could be improved by this method.
本発明は、上述の知見に基づいて案出されたものであり
、その目的は互いに逆向に接続した前記Ｐ−１−Ｎ接合
した非晶質半導体層に発生ずる光劣化現象を低減し、安
定した特性が得られる光センサーを提供することにある
。The present invention has been devised based on the above-mentioned knowledge, and its purpose is to reduce the photodegradation phenomenon that occurs in the P-1-N junction amorphous semiconductor layers connected in opposite directions, and to stabilize the amorphous semiconductor layers. The object of the present invention is to provide an optical sensor that has the following characteristics.
〔目的を達成するための具体的な手段〕本発明によれば
、上述の目的を達成するため、透明導電膜を被着した透
明基板上に、Ｐ−Ｉ−Ｎ接合した非晶質半導体層とバイ
アス電圧が印加される金属電極とから成る少なくとも２
つの積層体を、該透明導電膜を介して互いに逆向きに接
続した光センサーにおいて、互いに逆向に接続した前記
積層体の非晶質半導体層には、前記金属電極を介して３
〜１３Ｖのバイアス電圧が印加される光センサーを提供
する。[Specific Means for Achieving the Object] According to the present invention, in order to achieve the above-mentioned object, an amorphous semiconductor layer formed by P-I-N junction is formed on a transparent substrate coated with a transparent conductive film. and a metal electrode to which a bias voltage is applied.
In an optical sensor in which two laminates are connected in opposite directions to each other via the transparent conductive film, three amorphous semiconductor layers of the laminates connected in opposite directions are connected to each other through the metal electrode.
An optical sensor to which a bias voltage of ~13V is applied is provided.
上述の具体的な手段により、Ｐ−Ｉ−Ｎ接合した非晶質
半導体層を有する抱き合わせタイプの光センサーは、逆
バイアスとなる積層体の逆方向の光電流を検出するが、
その拡散電位以上の電位がバイアス電圧から印加される
と、検出される逆方向の光電流は光劣化の影響を受けな
い。これは、バイアス電圧により、生成されたキャリア
（正孔や電子）の収集効率が補われ、収集効率が向上す
るためと考えられる。By the above-mentioned specific means, a tied-type optical sensor having an amorphous semiconductor layer with a P-I-N junction detects a photocurrent in the opposite direction of the stack, which is reverse biased.
When a potential higher than the diffusion potential is applied from the bias voltage, the detected photocurrent in the opposite direction is not affected by photodegradation. This is considered to be because the bias voltage compensates for the collection efficiency of generated carriers (holes and electrons), improving the collection efficiency.
以下、本発明の光センサーを図面に基づいて詳細に説明
する。Hereinafter, the optical sensor of the present invention will be explained in detail based on the drawings.
第１図は本発明に係る光センサーの構造を示す断面構造
図である。FIG. 1 is a cross-sectional structural diagram showing the structure of an optical sensor according to the present invention.
本発明の光センサーは、透明導電膜２を被着した透明基
板ｌ上に、第１の導電型、第２の導電型、第３の導電型
を接合した、即ちＰ−Ｉ−Ｎ接合した非晶質半導体層３
及び金属電極４ａ、４ｂの積層体ａ、ｂを複数個形成し
て構成されている。In the optical sensor of the present invention, a first conductivity type, a second conductivity type, and a third conductivity type are bonded on a transparent substrate l on which a transparent conductive film 2 is adhered, that is, a P-I-N bond is formed. Amorphous semiconductor layer 3
It is configured by forming a plurality of laminates a and b of metal electrodes 4a and 4b.
透明基板１はガラス、透光性セラミックなどから成り、
該透明基板ｌの一主面には透明導電膜２が被着されてい
る。The transparent substrate 1 is made of glass, translucent ceramic, etc.
A transparent conductive film 2 is adhered to one main surface of the transparent substrate l.
透明導電膜２は酸化錫、酸化インジウム、酸化インジウ
ム錫などの金属酸化物膜で形成され、透明基板Ｉの一主
面の少なくとも積層体ａ、ｂに共通の膜となるように形
成されている。具体的には透明基板１の一生面上にマス
クを装着した後、上述の金属酸化物膜を被着したり、透
明基板１の一生面上に金属酸化物膜を被着した後、レジ
スト・エツチング処理したりして形成されている。The transparent conductive film 2 is formed of a metal oxide film such as tin oxide, indium oxide, indium tin oxide, etc., and is formed to be a film common to at least the laminates a and b on one main surface of the transparent substrate I. . Specifically, after attaching a mask to the entire surface of the transparent substrate 1, the metal oxide film described above is deposited, or after depositing the metal oxide film to the entire surface of the transparent substrate 1, a resist film is applied. It is formed by etching.
非晶質半導体層３は、少な（とも金属電極４ａ、４ｂが
形成される積層体ａ、ｂ部分には、第１の導電型、第２
の導電型、第３の導電型を接合、即ちＰ−１−Ｎ接合が
形成されている。具体的には、非晶質半導体層３はシラ
ン、ジシランなどのシリコン化合物ガスをグロー放電で
分解するプラズマＣＶＤ法や光ＣＶＤ法等で被着される
非晶質シリコンなどから成り、Ｐ層はシランガスにジボ
ランなどのＰ型ドーピングガスを混入した反応ガスで形
成され、１層はシランガスを反応ガスとして形成され、
Ｎ層はシランガスにフォスフインなどのＮ型ドーピング
ガスを混入した反応ガスで形成される。The amorphous semiconductor layer 3 is of a first conductivity type, a second conductivity type,
conductivity type and the third conductivity type are joined, that is, a P-1-N junction is formed. Specifically, the amorphous semiconductor layer 3 is made of amorphous silicon deposited by a plasma CVD method or a photo CVD method in which silicon compound gas such as silane or disilane is decomposed by glow discharge, and the P layer is made of amorphous silicon. It is formed using a reactive gas containing silane gas mixed with a P-type doping gas such as diborane, and one layer is formed using silane gas as a reactive gas.
The N layer is formed of a reactive gas containing silane gas mixed with an N-type doping gas such as phosphine.
尚、金属電極４ａ、４ｂが形成されない部分の非晶質半
導体層３はＰ−Ｉ−Ｎ接合している必要はない。Note that the portions of the amorphous semiconductor layer 3 where the metal electrodes 4a and 4b are not formed do not need to be in a P-I-N junction.
金属電極４ａ、４ｂは、非晶質半導体層３上に所定形状
の間隔を置いて形成されている。具体的には、金属電極
４ａ、４ｂは非晶質半導体層３上にマスクを装着し、ニ
ッケル、アルミニウム、チタン、クロム等の金属を被着
したり、非晶質半導体層３上にニッケル、アルミニウム
、チタン、クロム等の金属膜を被着した後、レジスト・
エツチング処理したりして所定パターンに形成される。The metal electrodes 4a and 4b are formed on the amorphous semiconductor layer 3 at predetermined intervals. Specifically, the metal electrodes 4a and 4b are formed by attaching a mask to the amorphous semiconductor layer 3 and depositing a metal such as nickel, aluminum, titanium, or chromium, or by depositing a metal such as nickel, aluminum, or After depositing a metal film of aluminum, titanium, chromium, etc., resist
It is formed into a predetermined pattern by etching.
尚、この金属電極４ａ、４ｂのレジスト・エツチング処
理に続き、金属電極４ａ、４ｂを侵さず且つ非晶質半導
体Ｎ３のみをエツチングする溶液に浸漬することにより
、上述のように金属電極４ａ、４ｂが形成されない部分
の非晶質半導体Ｎ３の一部（図では、Ｎ層）を除去でき
る。好ましい金属は、電極と外部リードとが容易に半田
付けできるニッケルであり、予め金属電極４ａ、４ｂ上
に半田デツプによる半田層５を設けてもよい。Incidentally, following the resist etching treatment of the metal electrodes 4a, 4b, the metal electrodes 4a, 4b are immersed in a solution that does not attack the metal electrodes 4a, 4b and etches only the amorphous semiconductor N3, thereby forming the metal electrodes 4a, 4b as described above. A part of the amorphous semiconductor N3 (the N layer in the figure) where the amorphous semiconductor N3 is not formed can be removed. A preferred metal is nickel, which allows the electrodes and external leads to be easily soldered, and a solder layer 5 of a solder depth may be provided on the metal electrodes 4a, 4b in advance.
そして、金属電極４ａ、４ｂ間に外部回路（図示せず）
から一定のバイアス電圧を印加しておく。An external circuit (not shown) is provided between the metal electrodes 4a and 4b.
A constant bias voltage is applied from .
上述の構成の光センサーは、Ｐ−１−Ｎ接合された積層
体ａ、ｂのダイオードが抱き合わされた構造になってい
る。The optical sensor having the above-mentioned structure has a structure in which diodes of the stacked bodies a and b, which are connected in a P-1-N manner, are tied together.
今、積層体ａの金属電極４ａに＋、積層体すの金属電極
４ｂに−でバイアス電圧をかけておくと、ｖｔ１ｍ体ａ
側の非晶質半導体層３ａには逆バイアス、積層体す側の
非晶質半導体層３ｂには順バイアスがかかることになる
。Now, if we apply a + bias voltage to the metal electrode 4a of the laminate a and a - bias voltage to the metal electrode 4b of the laminate A, then the vt1m body a
A reverse bias is applied to the amorphous semiconductor layer 3a on the side, and a forward bias is applied to the amorphous semiconductor layer 3b on the side of the stack.
暗状態において、金属電極４ａ、４ｂ間の抵抗は積層体
ａの逆方向抵抗Ｒａと積層体すの順方向抵抗Ｒｂの和に
なり、金属電極４ａ、４ｂ間に流れる電流は、該抵抗（
Ｒａ十Ｒｂ）に対応する。In the dark state, the resistance between the metal electrodes 4a and 4b is the sum of the reverse resistance Ra of the laminate a and the forward resistance Rb of the laminate A, and the current flowing between the metal electrodes 4a and 4b is equal to the resistance (
Ra + Rb).
上述の光センサーの透明基板１側より光照射される明状
態では、積層体ａ及び積層体すに光起電力が生じるが、
互いに逆電位であるため相殺され、実際には光起電流は
流れないものの、金属電極４ａに＋、金属電極４ｂに−
でバイアス電圧を印加されているので、積層体ａに逆方
向光電流が発生する。なお、積層体すはダイオードの順
方向抵抗から成る抵抗体となる。In the bright state where light is irradiated from the transparent substrate 1 side of the above-mentioned photosensor, a photovoltaic force is generated in the laminate a and the laminate.
Since the potentials are opposite to each other, they cancel each other out, and although no photovoltaic current actually flows, there is a positive current at the metal electrode 4a and a negative current at the metal electrode 4b.
Since a bias voltage is applied at , a reverse photocurrent is generated in the stack a. Note that the laminated body becomes a resistor consisting of a forward resistance of a diode.
そして、２つの金属電極４ａ、４ｂ間の電流は積層体ａ
の金属電極４ａ−非晶質半導体層３ａのＮ層−■層−Ｐ
層−透明導電膜２−積層体すの非晶質半導体層３ｂのＰ
層−■層−Ｎ層−金属電極４ｂに流れる。Then, the current between the two metal electrodes 4a and 4b is
metal electrode 4a-N layer of amorphous semiconductor layer 3a-■ layer-P
Layer - Transparent conductive film 2 - P of the amorphous semiconductor layer 3b of the laminate
Flows into the layer-■ layer-N layer-metal electrode 4b.
ここで、光センサー全体において見かけ上、光照射によ
って抵抗が低下したことになり、光導電型センサーのよ
うにはたらく。これにより、照度−抵抗値特性がリニア
となり、Ｔ値が約１となる。Here, the resistance of the entire optical sensor appears to be reduced by the light irradiation, and it functions like a photoconductive type sensor. As a result, the illuminance-resistance value characteristic becomes linear, and the T value becomes approximately 1.
本発明は、金属電極４ａ、４ｂ間に印加するバイアス電
圧を、３〜１３Ｖに設定することが重要である。特に５
〜ＩＯＶに設定することがよりこのましい。In the present invention, it is important to set the bias voltage applied between the metal electrodes 4a and 4b to 3 to 13V. Especially 5
It is more preferable to set it to ~IOV.
本発明者は、上述の光センサーを用いて種々の実験をお
こなった。The present inventor conducted various experiments using the above-mentioned optical sensor.
まず、上述の光センサーを金属電極４ａ、４ｂ間にバイ
アス電圧を印加せず、端子開放してＡＭ−１，１００ｍ
Ｗ／ｃ＋ｗ２の光を１００時間照射した（光センサ−Ａ
）。また金属電極４ａ、４ｂ間に通常用いられるバイア
ス電圧、１■を印加してＡＭ−１，１００ｍＷ／ｃｍ２
の光を１００時間照射した（光センサ−Ｂ）。上記の光
劣化した光センサ−Ａ及び光センサ−Ｂにバイアス電圧
をＯ〜２０Ｖに変化させ、光センサ−Ａ及び光センサ−
Ｂの光劣化前の抵抗値との変化率を測定した。First, without applying a bias voltage between the metal electrodes 4a and 4b, the above-mentioned optical sensor was opened with its terminals opened, and the AM-1, 100 m
Irradiated with light of W/c+w2 for 100 hours (light sensor-A
). In addition, a bias voltage of 1cm, which is usually used between the metal electrodes 4a and 4b, is applied to generate AM-1, 100mW/cm2.
was irradiated with light for 100 hours (Photosensor-B). The bias voltage was changed from O to 20 V to the photo-degraded photosensor-A and photo-sensor-B, and the photo-sensor-A and photo-sensor-B were
The rate of change from the resistance value of B before photodeterioration was measured.
第２図は、その結果を示す特性図であり、横軸に変化さ
せたバイアス電圧の電位をしめし、縦軸に光劣化前（初
期状態）の抵抗値と比較した抵抗値増加率をしめす。な
お、測定には２００ルツクスの光照度でおこなった。FIG. 2 is a characteristic diagram showing the results, in which the horizontal axis shows the potential of the changed bias voltage, and the vertical axis shows the rate of increase in resistance value compared to the resistance value before photodegradation (initial state). Note that the measurement was performed at a light illuminance of 200 lux.
第２図から明らかなように、光劣化は、概ね端子開放し
て光を１００時間照射した光センサ−Ａの方が、１■の
バイアス電圧を印加して光を１００時間照射した光セン
サ−Ｂよりも大きいことがわかる。As is clear from Fig. 2, photodeterioration is generally worse for photosensor-A, which was irradiated with light for 100 hours with its terminals open, than for photosensor-A, which was irradiated with light for 100 hours with a bias voltage of 1. It can be seen that it is larger than B.
さらに重要なことは、光劣化した光センサー八及び光セ
ンサ−Ｂであっても、バイアス電圧の電位次第では、光
劣化前の初期状態の抵抗値と遜色のない使用が可能であ
ることである。即ち、バイアス電圧の電位を３〜１３Ｖ
に設定して使用すると、初期状態の抵抗値と比較して１
０〜１５％の抵抗値増加率におさえられ、さらに、バイ
アス電圧の電位を５〜ＩＯＶに設定して使用すると、光
劣化した光センサ−Ａ、Ｂでも、初期状態の抵抗値と比
較して抵抗値増加率（明電流低下率）が０と、全く光劣
化が観測されない状態とすることができる。What is more important is that even if photo-degraded photosensor 8 and photo-sensor-B are used, depending on the potential of the bias voltage, it is possible to use them with the same resistance value as the initial state before photodeterioration. . That is, the potential of the bias voltage is set to 3 to 13V.
When used with the setting set to
If the resistance value increase rate is suppressed to 0 to 15%, and the bias voltage potential is set to 5 to IOV, even optical sensors A and B that have been degraded by light will have a higher resistance value than the initial state. A state in which the resistance value increase rate (bright current decrease rate) is 0 and no photodeterioration is observed can be achieved.
なお、バイアス電圧の電位を１３Ｖ以上に設定すると、
抵抗値増加率が次第に顕著となるが、これは、２つの金
属電極４ａ、４ｂ間に非晶質半導体層を介して直接流れ
る横力同電両が存在が顕著となり、非晶質半導体層３の
１層の光導電率の増加が出てくるためと考えられる。Note that if the potential of the bias voltage is set to 13V or higher,
The rate of increase in resistance value gradually becomes remarkable, but this is because the existence of a lateral force that flows directly between the two metal electrodes 4a and 4b through the amorphous semiconductor layer becomes noticeable, and the amorphous semiconductor layer 3 This is thought to be due to an increase in the photoconductivity of one layer.
本発明によれば、光劣化による抵抗値増加率を低下せし
めるために、バイアス電圧を３〜１３Ｖに設定すること
が有効であるが、さらに、非晶質半導体層の１層の厚み
を１〜５μｍと厚く設定すると、バイアス電圧を３〜１
３Ｖの電圧に対して信頼性を向上させることができる。According to the present invention, in order to reduce the rate of increase in resistance value due to photodeterioration, it is effective to set the bias voltage to 3 to 13 V. If the thickness is set to 5 μm, the bias voltage will be 3 to 1
Reliability can be improved for a voltage of 3V.
尚、上述の光センサーは、Ｐ−Ｉ−Ｎ接合された積層体
ａ、ｂのダイオードが抱き合わされた構造になっている
が、金属電極４ａ、４ｂが形成されていない部分の非晶
質半導体層の一部又は全部を除去してｋＪｗ体ａ、ｂの
ダイオードを抱き合わせにしても、さらに、同一基板上
にバイアス電圧が印加される一対の積層体ａ、ｂを複数
個形成しても構わない。The above-mentioned optical sensor has a structure in which the diodes of the laminated bodies a and b connected by P-I-N are tied together, but the amorphous semiconductor in the part where the metal electrodes 4a and 4b are not formed. It is also possible to remove part or all of the layers to combine the diodes of kJw bodies a and b, or to form a plurality of pairs of laminated bodies a and b to which a bias voltage is applied on the same substrate. do not have.
以上のように、本発明は透明導電膜を被着した透明基板
上に、Ｐ−１−Ｎ接合した非晶質半導体層とバイアス電
圧が印加される金属電極とから成る積層体を形成した光
電変換装置において、該全屈電極間に、３〜１３Ｖのバ
イアス電圧が印加したため、Ｐ−Ｉ−Ｎ接合した非晶質
半導体層に発生する光劣化現象を低減し、光導電率の低
下を抑え、安定した特性が得られ、光センサーの使用用
途を拡大できるものとなる。As described above, the present invention provides a photovoltaic device in which a laminate consisting of a P-1-N bonded amorphous semiconductor layer and a metal electrode to which a bias voltage is applied is formed on a transparent substrate coated with a transparent conductive film. In the conversion device, a bias voltage of 3 to 13 V was applied between the fully bent electrodes, reducing the photodegradation phenomenon that occurs in the P-I-N junction amorphous semiconductor layer and suppressing the decrease in photoconductivity. , stable characteristics can be obtained, and the applications of optical sensors can be expanded.
第１図は本発明に係る光センサーの構造を示す断面図で
ある。第２図は、光センサーのバイアス電工の電位と光
劣化前の初期状態の抵抗値と比較した抵抗値増加率の関
係をしめず特性図である。
■、３１・・・・・透明基板
２．３２・・・−・透明導電膜
３．３３・・・・・非晶質半導体層
４ａ、４ｂ・・・・金属電極
ａ、ｂ・・・・・・積層体FIG. 1 is a sectional view showing the structure of an optical sensor according to the present invention. FIG. 2 is a characteristic diagram showing the relationship between the bias electric potential of the optical sensor and the rate of increase in resistance value compared to the resistance value in the initial state before photodeterioration. ■, 31...Transparent substrate 2.32...-Transparent conductive film 3.33...Amorphous semiconductor layer 4a, 4b...Metal electrodes a, b...・・Laminated body
Claims (1)
した非晶質半導体層とバイアス電圧が印加される金属電
極とから成る少なくとも２つの積層体を、該透明導電膜
を介して互いに逆向きに接続した光センサーにおいて、 互いに逆向に接続した前記積層体の非晶質半導体層には
、前記金属電極を介して３〜１３Ｖのバイアス電圧が印
加されることを特徴とする光センサー。[Claims] At least two laminates each consisting of a P-I-N bonded amorphous semiconductor layer and a metal electrode to which a bias voltage is applied are formed on a transparent substrate coated with a transparent conductive film. In the optical sensor connected in opposite directions to each other via a transparent conductive film, a bias voltage of 3 to 13 V is applied to the amorphous semiconductor layers of the stacked body connected in opposite directions to each other through the metal electrode. A light sensor featuring
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63133788A JPH01302870A (en) | 1988-05-31 | 1988-05-31 | Photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63133788A JPH01302870A (en) | 1988-05-31 | 1988-05-31 | Photosensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01302870A true JPH01302870A (en) | 1989-12-06 |
Family
ID=15113025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63133788A Pending JPH01302870A (en) | 1988-05-31 | 1988-05-31 | Photosensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01302870A (en) |
-
1988
- 1988-05-31 JP JP63133788A patent/JPH01302870A/en active Pending
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