JPH0129057B2 - - Google Patents
Info
- Publication number
- JPH0129057B2 JPH0129057B2 JP58068369A JP6836983A JPH0129057B2 JP H0129057 B2 JPH0129057 B2 JP H0129057B2 JP 58068369 A JP58068369 A JP 58068369A JP 6836983 A JP6836983 A JP 6836983A JP H0129057 B2 JPH0129057 B2 JP H0129057B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- planar
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 17
- 230000005684 electric field Effects 0.000 description 15
- 239000011521 glass Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58068369A JPS59194441A (ja) | 1983-04-20 | 1983-04-20 | プレ−ナ型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58068369A JPS59194441A (ja) | 1983-04-20 | 1983-04-20 | プレ−ナ型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59194441A JPS59194441A (ja) | 1984-11-05 |
| JPH0129057B2 true JPH0129057B2 (de) | 1989-06-07 |
Family
ID=13371783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58068369A Granted JPS59194441A (ja) | 1983-04-20 | 1983-04-20 | プレ−ナ型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59194441A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001097269A1 (fr) * | 2000-06-13 | 2001-12-20 | Applied Materials Inc. | Procede et systeme de transformation de film et tranche |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102217070B (zh) | 2009-09-03 | 2013-09-25 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
| WO2012160632A1 (ja) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
| CN103403846B (zh) * | 2012-01-31 | 2016-07-06 | 新电元工业株式会社 | 半导体接合保护用玻璃复合物、半导体装置的制造方法及半导体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867031A (ja) * | 1981-09-25 | 1983-04-21 | シ−メンス・アクチエンゲゼルシヤフト | 半導体集積回路とその製造方法 |
-
1983
- 1983-04-20 JP JP58068369A patent/JPS59194441A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867031A (ja) * | 1981-09-25 | 1983-04-21 | シ−メンス・アクチエンゲゼルシヤフト | 半導体集積回路とその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001097269A1 (fr) * | 2000-06-13 | 2001-12-20 | Applied Materials Inc. | Procede et systeme de transformation de film et tranche |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59194441A (ja) | 1984-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3189973A (en) | Method of fabricating a semiconductor device | |
| US4412242A (en) | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions | |
| JP3275536B2 (ja) | 半導体装置及びその製造方法 | |
| KR940002768B1 (ko) | 고전압 반도체 장치 및 그의 제조 공정 | |
| US5031021A (en) | Semiconductor device with a high breakdown voltage | |
| US3772577A (en) | Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same | |
| US4542400A (en) | Semiconductor device with multi-layered structure | |
| US3559006A (en) | Semiconductor device with an inclined inwardly extending groove | |
| JPH0129057B2 (de) | ||
| JP2989113B2 (ja) | 半導体装置およびその製法 | |
| GB1573234A (en) | Thyristors | |
| JPS6338259A (ja) | 半導体装置 | |
| JP3234677B2 (ja) | ラテラル型フォトトライアック | |
| US4789886A (en) | Method and apparatus for insulating high voltage semiconductor structures | |
| JP2005294772A (ja) | 半導体装置 | |
| US20240170569A1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2017191830A (ja) | パワー半導体素子およびその製造方法 | |
| JPH0120549B2 (de) | ||
| WO2013140621A1 (ja) | 半導体装置およびその製造方法 | |
| JPH0277128A (ja) | 半導体装置 | |
| JPH04206574A (ja) | 埋込ゲート形半導体素子及びその製造方法 | |
| TW202249288A (zh) | 電子元件 | |
| JP2501929B2 (ja) | 静電誘導半導体装置 | |
| JPS6140140B2 (de) | ||
| JPH05251688A (ja) | 半導体装置およびその製造方法 |