JPH01287940A - Rotary treatment device - Google Patents
Rotary treatment deviceInfo
- Publication number
- JPH01287940A JPH01287940A JP63118009A JP11800988A JPH01287940A JP H01287940 A JPH01287940 A JP H01287940A JP 63118009 A JP63118009 A JP 63118009A JP 11800988 A JP11800988 A JP 11800988A JP H01287940 A JPH01287940 A JP H01287940A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- spin chuck
- semiconductor
- dust
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 58
- 239000000428 dust Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000013013 elastic material Substances 0.000 abstract description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 1
- 230000001133 acceleration Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 229930182556 Polyacetal Natural products 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920006324 polyoxymethylene Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000190020 Zelkova serrata Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、回転処理装置に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a rotation processing apparatus.
（従来の技術）
半導体製造装置例えばスピン方式のレジスト塗布・現像
装置では、一般に、第５図（ａ）に示すように真空吸引
口■を有する回転保持体例えばスピンチャック■により
半導体ウェハ■を吸着保持し、上記スピンチャック■を
モータに）等により回転することが行われている。(Prior Art) In a semiconductor manufacturing device such as a spin-type resist coating/developing device, a semiconductor wafer (■) is generally attracted by a rotating holder (such as a spin chuck ■) having a vacuum suction port (■) as shown in FIG. 5(a). The spin chuck (2) is rotated by a motor or the like.
この回転は１例えば回転数が最大８．００Ｏｒｐｍ程度
。This rotation is 1, for example, at a maximum rotation speed of about 8.00 rpm.
回転加速度が１０．０００〜５０．ＯＯＯｒｐｍ／ｓｅ
ｃ程度と高速回転が用いられる。The rotational acceleration is 10.000~50. OOOrpm/se
A high speed rotation of about c is used.
また、上記スピンチャック■は、半導体ウェハ■を吸着
したまま上記のように高速・高加速度回転させるので、
その吸着の信頼性を高くするために、上記スピンチャッ
ク■の吸着面の構造は非常に重要である。従来、例えば
第５図（ｂ）及び（ｃ）に示すように、スピンチャック
■０の中央部分に真空吸引口■を設け、周縁部に環状の
台部■、半導体ウェハ■を支える環状の台部■（１０）
を同心円状に設ける。また、上記台部（９）（１０）の
それぞれの中間には、環状の溝（１１）、放射状の溝（
１２）が形成されており、真空吸引口■に連通されて真
空吸引通路を形成する。なお、第５図（Ｑ）の環状の台
部（１０）は、第５図（ｂ）の環状の台部■を変形した
もので、半導体ウェハ■とスピンチャック０の接触面積
を下げるために肉厚を薄く形成したものである。In addition, since the above spin chuck ■ rotates at high speed and high acceleration as described above while holding the semiconductor wafer ■,
In order to increase the reliability of the suction, the structure of the suction surface of the spin chuck (2) is very important. Conventionally, as shown in FIGS. 5(b) and 5(c), for example, a vacuum suction port (2) was provided in the center of a spin chuck (2), and an annular stand (2) was provided at the periphery, and an annular stand (2) that supported a semiconductor wafer (2) was provided at the periphery. Part ■ (10)
are arranged concentrically. Further, in the middle of each of the base parts (9) and (10), an annular groove (11) and a radial groove (
12) is formed and communicates with the vacuum suction port (2) to form a vacuum suction passage. The annular platform (10) in FIG. 5(Q) is a modification of the annular platform (10) in FIG. 5(b), and is designed to reduce the contact area between the semiconductor wafer (■) and the spin chuck 0. It is formed with a thin wall thickness.
（発明が解決しようとする課題）
しかしながら、上述の従来装置には次のような問題があ
る。(Problems to be Solved by the Invention) However, the above-mentioned conventional device has the following problems.
スピンチャック■は半導体ウェハ■を吸着した状態で高
速・高加速度で回転するので、上記スピンチャック■と
半導体ウェハ■裏面間で接触圧が高い状態の摩擦を生じ
る。この摩擦によりダストが発生し、このダストが連続
する処理工程において半導体ウェハ■のパターン形成面
に付着してパターン欠陥を発生したり、また半導体ウェ
ハ■の裏面に異物として付着し例えば露光工程での焦点
ずれを発生したりして、半導体素子の製造工程において
歩留りを下げる原因の一つとなっていた。Since the spin chuck (2) rotates at high speed and high acceleration with the semiconductor wafer (2) adsorbed, friction with high contact pressure is generated between the spin chuck (2) and the back surface of the semiconductor wafer (2). This friction generates dust, which may adhere to the pattern-forming surface of the semiconductor wafer (■) during successive processing steps and cause pattern defects, or may adhere as foreign matter to the back surface of the semiconductor wafer (■) during the exposure process, for example. This causes defocusing, which is one of the causes of lower yields in the manufacturing process of semiconductor devices.
上記点を解決する方法として、ダスト発生の原因である
半導体ウェハ■とスピンチャック■との接触面圧を低減
させる方法、スピンチャック■の回転数・加速度を下げ
る方法、スピンチャック■を洗浄する方法、スピンチャ
ック■の静電気を除去して発生したダストの付着を防止
する方法等が試みられているが、何れも十分な効果は得
られていない。Methods to solve the above points include reducing the contact pressure between the semiconductor wafer ■ and the spin chuck ■, which is the cause of dust generation, reducing the rotational speed and acceleration of the spin chuck ■, and cleaning the spin chuck ■. Attempts have been made to prevent the adhesion of dust generated by removing static electricity from spin chucks, but none of them have been sufficiently effective.
すなわち、半導体製造工程における例えばレジスト処理
プロセスには、上述したような回転数・加速度が必要不
可決であり、この条件を満たさないと所望する均一なレ
ジスト膜厚が得られない。That is, for example, the resist treatment process in the semiconductor manufacturing process requires the above-mentioned rotational speed and acceleration, and unless these conditions are met, a desired uniform resist film thickness cannot be obtained.
一方、上記高速回転数・高加速度を得るには。On the other hand, to obtain the above-mentioned high rotational speed and high acceleration.
半導体ウェハ■とスピンチャック■との接触面積・面圧
共に大きくすればよいが、半導体ウェハ■は一般に厚さ
が０．５画程度と薄く、面圧が大きいと機械的歪を受け
て変形したりする不都合がある。It is possible to increase both the contact area and contact pressure between the semiconductor wafer ■ and the spin chuck ■, but the semiconductor wafer ■ is generally thin, about 0.5 inch thick, and if the contact pressure is large, it will deform due to mechanical strain. There are some inconveniences.
又、スピンチャック■に付着するダストを減少させるた
めに、スピンチャック■の洗浄を行う場合は、洗浄の頻
度を上げないと効果が薄い。Further, when cleaning the spin chuck (2) in order to reduce dust adhering to the spin chuck (2), the effect will be weak unless the frequency of cleaning is increased.
本発明は上述の従来事情に対処してなされたもので、ダ
ストの発生が少なく半導体の歩留りが高い半導体製造装
置を提供しようとするものである。The present invention has been made in response to the above-mentioned conventional situation, and aims to provide a semiconductor manufacturing apparatus that generates less dust and has a high semiconductor yield.
（課題を解決するための手段）
すなわち本発明は、回転支持面に被処理体を吸着して回
転処理する装置において、上記回転支持面と上記被処理
体の接触部に回転方向に対して弾性変形する支持材を設
けたことを特徴とする回転処理装置。(Means for Solving the Problems) That is, the present invention provides an apparatus for rotationally processing an object to be processed by adsorbing it to a rotation support surface, in which a contact portion between the rotation support surface and the object to be processed has elasticity in the direction of rotation. A rotary processing device characterized by being provided with a deformable support member.
（作 用）
本発明回転処理装置では、回転支持面と被処理体の接触
部に回転方向に対して弾性変形する支持材を設けたので
、上記接触部における上記回転支持面と上記被処理体間
の滑り発生を防止することができる。(Function) In the rotary processing apparatus of the present invention, a support material that is elastically deformed in the rotational direction is provided at the contact portion between the rotary support surface and the object to be processed. It is possible to prevent slipping between the parts.
（実施例）
以下１本発明回転処理装置をレジスト塗布装置に適用し
た一実施例を第１図を参照して説明する。(Example) An example in which the rotation processing apparatus of the present invention is applied to a resist coating apparatus will be described below with reference to FIG.
基台（１３）にはモータ（１４）が立設されている。こ
のモータ（１４）の回転軸部分には被処理体例えば半導
体ウェハ（１５）を真空（負圧）により回転支持面に吸
着保持して回転する回転支持体例えばスピンチャック（
１６）が取着されている。そして、上記モータ（１４）
を回転制御することにより、上記半導体ウェハ（１５）
を回転例えば最大回転数８００Ｏｒｐｍ程度、回転加速
度５０００〜５０．ＯＯＯｒｐｍ／ｓｅｃ程度で回転可
能に構成されている。A motor (14) is installed upright on the base (13). The rotary shaft portion of the motor (14) has a rotary support, such as a spin chuck (
16) is attached. And the above motor (14)
By controlling the rotation of the semiconductor wafer (15),
For example, the maximum rotational speed is about 800 rpm, and the rotational acceleration is 5000 to 50. It is configured to be rotatable at approximately OOO rpm/sec.
一方、上記スピンチャック（１６）の回転中心付近の上
方には、半導体ウェハ（１５）に向ってレジスト（１７
）を滴下するノズル（１８）が配置され、また上記半導
体ウェハ（１５）の周辺部を取囲む如くカバー（１９）
が設けられている。On the other hand, above the rotation center of the spin chuck (16), there is a resist (17) facing toward the semiconductor wafer (15).
) is arranged, and a cover (19) is arranged to surround the periphery of the semiconductor wafer (15).
is provided.
そして、半導体ウェハ（１５）上にレジスト（１７）を
滴下した後、上記半導体ウェハ（１５）を回転して遠心
力により上記レジスト（１７）を広げて半導体ウェハ（
１５）表面にレジスト膜（２０）を形成し、また上記半
導体ウェハ（１５）の外周より外方向に飛散した余分の
レジストの飛散を防止するように構成されている。Then, after dropping the resist (17) onto the semiconductor wafer (15), the semiconductor wafer (15) is rotated to spread the resist (17) by centrifugal force, and the semiconductor wafer (15) is spread by centrifugal force.
15) A resist film (20) is formed on the surface of the semiconductor wafer (15) to prevent excess resist from scattering outward from the outer periphery of the semiconductor wafer (15).
次に、上記スピンチャック（１６）の吸着面側には、第
２図第３図に示すように、中央上部付近に真空吸引口（
２１）を設け、周縁部に環状をなす台部（２２）が設け
られている。また、上記スピンチャック（１６）の半導
体ウェハ（１５）支持面には弾性変形する支持材（２３
）が設けられている。この支持材（２３）は半導体ウェ
ハ（１５）を回転させる際、半導体ウェハ（１５）裏面
と支持面との摩擦の発生を吸収する作用を呈する弾性材
が用いられる。Next, as shown in FIGS. 2 and 3, on the suction surface side of the spin chuck (16), there is a vacuum suction port (
21), and a ring-shaped platform (22) is provided at the peripheral edge. Further, an elastically deformable support material (23) is provided on the semiconductor wafer (15) support surface of the spin chuck (16).
) is provided. This support material (23) is made of an elastic material that acts to absorb friction between the back surface of the semiconductor wafer (15) and the support surface when the semiconductor wafer (15) is rotated.
例えば、半導体ウェハ（１５）との接触部が巾Ｔの帯状
弾性片を支持材（２３）として第２図に示す如く配置す
る。すなわち、上記半導体ウェハ（１５）を支える台部
の役目をする複数の回転方向に弾性変形する支持材例え
ばポリアセタール樹脂製の支持材（２３）が、スピンチ
ャック（１６）の中心を通る直線に沿う如く接着剤その
他の手段を用いて配置固着されている。上記支持材（２
３）は支持面から突出してもよいし１機能を失なわない
程度に埋め込まれてもよいし、また、−様な面を形成し
てもよい。For example, a band-shaped elastic piece having a width T is arranged as a supporting member (23) as shown in FIG. 2 at the contact portion with the semiconductor wafer (15). That is, a supporting material (23) made of polyacetal resin, for example, which is elastically deformed in a plurality of rotational directions and serves as a platform for supporting the semiconductor wafer (15), is moved along a straight line passing through the center of the spin chuck (16). They are placed and fixed using adhesive or other means. The above supporting material (2
3) may protrude from the support surface, may be embedded to the extent that one function is not lost, or may form a --like surface.
そして、上記支持材（２３）間には、スピンチャック（
１６）の中心から放射状に溝（２４）が複数形成され、
また同心円状に溝（２５）が複数形成されており、上記
溝（２４） （２５）は真空吸引口（２１）に連通し、
半導体ウェハ（１５）を吸着保持可能に構成されている
。なお、真空吸引口（２１）の周囲に設けた４個の突起
（２６）も半導体ウェハ（１５）の支持材である。A spin chuck (
A plurality of grooves (24) are formed radially from the center of 16),
Further, a plurality of concentric grooves (25) are formed, and the grooves (24) and (25) communicate with the vacuum suction port (21).
It is configured to be able to attract and hold a semiconductor wafer (15). Note that the four protrusions (26) provided around the vacuum suction port (21) also serve as supporting materials for the semiconductor wafer (15).
上記スピンチャック（１６）を例えばポリアセタール樹
脂で製作する場合には、上記支持材（２３）とスピンチ
ャック（１６）は一体物として製作される。When the spin chuck (16) is made of polyacetal resin, for example, the support material (23) and the spin chuck (16) are made as a single piece.
次に、動作作用について説明する。Next, the operation effect will be explained.
先ず、搬送アーム欅構等からなる搬送機構（図示せず）
によりレジスト塗布前の半導体ウェハ（１５）をスピン
チャック（１６）に載置し吸着保持する。First, a transport mechanism (not shown) consisting of a transport arm keyaki structure, etc.
The semiconductor wafer (15) before resist coating is placed on the spin chuck (16) and held by suction.
次に、ノズル（１８）から上記半導体ウェハ（１５）に
向けてレジスト（１７）を所定量滴下した後、モータ（
１４）を回転制御して半導体ウェハ（１５）を低速回転
して、上記レジスト（１７）を広げる。一定時間上記低
速回転を行った後、モータ（１４）を回転制御して半導
体ウェハ（１５）を高速回転させて塗布処理する。Next, after dropping a predetermined amount of resist (17) from the nozzle (18) toward the semiconductor wafer (15), the motor (
14) to rotate the semiconductor wafer (15) at a low speed to spread the resist (17). After performing the above-described low-speed rotation for a certain period of time, the motor (14) is rotationally controlled to rotate the semiconductor wafer (15) at a high speed for coating processing.
このとき、スピンチャック（１６）は急激に回転加速さ
れ高速回転するので、このスピンチャック（１６）に吸
着されている半導体ウェハ（１５）との接触部において
滑りが発生するのは避は難く、摩擦によるダストのよう
なパーティクルが発生し易い。At this time, since the spin chuck (16) is rapidly accelerated and rotates at high speed, it is inevitable that slippage will occur at the contact area with the semiconductor wafer (15) that is attracted to the spin chuck (16). Particles such as dust are likely to be generated due to friction.
従来のスピンチャックにおいては、半導体ウェハ（１５
）と接触する台部は回転方向に長い、すなわち滑り方向
に長く弾性の全んどない構成の台部であり、半導体ウェ
ハ（１５）と上記台部とが著しく高い加速度を受けた場
合に微少の滑りを生じ摩擦によりダスト発生の原因とな
っていた。In a conventional spin chuck, a semiconductor wafer (15
) is long in the rotational direction, that is, long in the sliding direction and has no elasticity at all, and when the semiconductor wafer (15) and the platform are subjected to extremely high acceleration, the This caused slippage and friction, which caused dust generation.
これに比べて本発明の場合には、上記台部の役目をする
支持材（２３）は、半導体ウェハ（１５）との接触部が
巾の狭い帯状であり、且つスピンチャック（１６）の中
心を通る直線に沿う如く上記支持材（２３）を設けてい
るので、半導体ウェハ（１５）とスピンチャック（１６
）間に滑りが発生しても上記支持材（２３）が回転方向
に微少変形可能である。したがって、上記滑りが支持材
（２３）に吸収される如く機能するのでこの支持材（２
３）と半導体ウェハ（１５）間の摩擦によるダストの発
生を防止することができる。In contrast, in the case of the present invention, the supporting member (23) serving as the platform has a narrow strip-like contact portion with the semiconductor wafer (15), and a narrow strip-shaped portion in contact with the semiconductor wafer (15), and the support member (23) serving as the platform has a narrow band shape and is located at the center of the spin chuck (16). Since the support member (23) is provided along a straight line passing through the semiconductor wafer (15) and the spin chuck (16),
) Even if slippage occurs between the supports (23), the support member (23) can be slightly deformed in the rotational direction. Therefore, the support material (23) functions so that the slippage is absorbed by the support material (23).
3) and the semiconductor wafer (15) from being generated due to friction.
例えば、第４図に示すように、パーティクル数は、半導
体ウェハ（１５）の支持材（２３）又は台部の巾Ｔが１
．０閣程度以下の領域において、従来の場合よりも減少
している。For example, as shown in FIG.
．． In the area of 0 cabinets or less, the number has decreased compared to the previous case.
なお、支持材（２３）の巾Ｔが薄くなるほど半導体ウェ
ハ（１５）との接触面積が減少するため、パーティクル
数は減少している。Note that as the width T of the support material (23) becomes thinner, the contact area with the semiconductor wafer (15) decreases, so the number of particles decreases.
しかし、半導体ウェハ（１５）を吸着する吸着力を一定
とすれば、接触面積を小さくした場合接触面圧が上るた
め接触部での摩擦が大きくなり、逆に接触面積を大きく
した場合には接触面圧は下るが摩擦面が大きくなり且つ
支持材（２３）の弾性機能は低下するので、接触部分で
のダストの発生がありパーティクル数が減少せず、どう
しても有効範囲が制限される。However, if the adsorption force for adsorbing the semiconductor wafer (15) is constant, when the contact area is made smaller, the contact surface pressure increases and the friction at the contact part increases, and conversely, when the contact area is made larger, the contact Although the surface pressure decreases, the friction surface increases and the elastic function of the support material (23) decreases, so dust is generated at the contact area, the number of particles does not decrease, and the effective range is inevitably limited.
半導体ウェハ（１５）を高速回転させて所望の厚さの膜
厚になるとモータ（１４）の回転を停止し、半導体ウェ
ハ（１５）を搬送機構（図示せず）によりスピンチャッ
ク（１６）から取出してレジスト塗布装置外に搬出する
。The semiconductor wafer (15) is rotated at high speed and when the desired film thickness is reached, the rotation of the motor (14) is stopped and the semiconductor wafer (15) is taken out from the spin chuck (16) by a transfer mechanism (not shown). and transport it out of the resist coating equipment.
なお、上記実施例では、スピンチャック、半導体ウェハ
の支持材として、上記半導体ウェハとの断熱性を高くし
且つ一般に上記半導体ウェハの材質がシリコンであり硬
さのバランスを考慮して。In the above embodiments, the spin chuck is used as a supporting material for the semiconductor wafer, with consideration given to the balance of hardness since the material of the semiconductor wafer is generally silicon and the heat insulation property between the spin chuck and the semiconductor wafer is high.
ポリアセタール樹脂を使用したが、同一硬度を有する例
えば三弗化エチレン樹脂系およびこれに炭素を淡化した
導電性樹脂等を使用しても、ポリアセタール樹脂の場合
とほぼ同等の効果を上げることができる。Although polyacetal resin was used, it is also possible to use, for example, a trifluoroethylene resin system having the same hardness, a conductive resin with thinned carbon, etc., to achieve almost the same effect as in the case of polyacetal resin.
また、上記実施例のスピンチャックは、上記のようにダ
ストの発生が少ないので、吸着保持して回転処理する他
の装置、例えば半導体製造におけるスピン式現像装置、
洗浄装置、イオン注入装置、レーザ熱処理装置等に使用
しても有効である。In addition, since the spin chuck of the above embodiment generates less dust as described above, it can be used in other devices that perform suction holding and rotation processing, such as a spin type developing device in semiconductor manufacturing.
It is also effective for use in cleaning equipment, ion implantation equipment, laser heat treatment equipment, etc.
さらに、被処理体は半導体ウェハに限らず１回転処理す
る装置であれば何れでもよく例えば液晶駆動回路、プリ
ント基板等信れでもよい。Further, the object to be processed is not limited to a semiconductor wafer, but may be any device that processes one rotation, such as a liquid crystal drive circuit, a printed circuit board, or the like.
さらに、上記実施例ではレジスト塗布について説明した
が、処理であれば何れでもよく、例えば現像液の塗布に
適用してもよい。Further, in the above embodiments, resist coating has been described, but any process may be used, for example, developer coating may be applied.
〔発明の効果〕
上述したように、本発明装置によれば、ダストの発生が
少く半導体など被処理体の歩留りを高くすることが可能
となる。[Effects of the Invention] As described above, according to the apparatus of the present invention, less dust is generated and it is possible to increase the yield of objects to be processed such as semiconductors.
第１図は本発明半導体製造装置をレジスト塗布装置に適
用した一実施例を示す構成図、第２図は第１図の主要部
の説明図、第３図は第２図縦断面図、第４図は第１図の
一特性例図、第５図は従来例の説明図である。
１４・・・モータ、１５・・・半導体ウェハ。
１６・・・スピンチャック、 ２１・・・真空吸引口、
２２・・・台 部、 ２３・・・支持材、２４
、２５・・・溝。
特許出願人 東京エレクトロン株式会社チル九州株式会
社
第１図
第２図
第３図
フ８
第４図
支涛丹 （台告帥幅丁（ｍｍ）FIG. 1 is a configuration diagram showing an embodiment in which the semiconductor manufacturing apparatus of the present invention is applied to a resist coating apparatus, FIG. 2 is an explanatory diagram of the main parts of FIG. 1, and FIG. FIG. 4 is a diagram showing an example of the characteristics of FIG. 1, and FIG. 5 is an explanatory diagram of a conventional example. 14...Motor, 15...Semiconductor wafer. 16... Spin chuck, 21... Vacuum suction port,
22... Base part, 23... Supporting material, 24
, 25...groove. Patent Applicant: Tokyo Electron Co., Ltd. Chill Kyushu Co., Ltd. Figure 1 Figure 2 Figure 3 Figure 8 Figure 4
Claims (1)
おいて、上記回転支持面と上記被処理体の接触部に回転
方向に対して弾性変形する支持材を設けたことを特徴と
する回転処理装置。A device for rotationally processing an object to be processed by adsorbing it to a rotating support surface, characterized in that a support material that elastically deforms in the direction of rotation is provided at a contact portion between the rotating support surface and the object to be processed. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63118009A JP2657392B2 (en) | 1988-05-13 | 1988-05-13 | Rotary processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63118009A JP2657392B2 (en) | 1988-05-13 | 1988-05-13 | Rotary processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01287940A true JPH01287940A (en) | 1989-11-20 |
| JP2657392B2 JP2657392B2 (en) | 1997-09-24 |
Family
ID=14725796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63118009A Expired - Lifetime JP2657392B2 (en) | 1988-05-13 | 1988-05-13 | Rotary processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2657392B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10107129A (en) * | 1996-09-26 | 1998-04-24 | Shibaura Eng Works Co Ltd | Substrate processing device |
| WO2004036633A1 (en) * | 2002-10-17 | 2004-04-29 | Tokyo Electron Limited | Liquid processing device |
| JP2004153262A (en) * | 2003-10-14 | 2004-05-27 | Oki Electric Ind Co Ltd | Method of spin coating |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63256326A (en) * | 1987-04-15 | 1988-10-24 | Hitachi Ltd | Vacuum chuck and manufacture thereof |
-
1988
- 1988-05-13 JP JP63118009A patent/JP2657392B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63256326A (en) * | 1987-04-15 | 1988-10-24 | Hitachi Ltd | Vacuum chuck and manufacture thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10107129A (en) * | 1996-09-26 | 1998-04-24 | Shibaura Eng Works Co Ltd | Substrate processing device |
| WO2004036633A1 (en) * | 2002-10-17 | 2004-04-29 | Tokyo Electron Limited | Liquid processing device |
| JP2004153262A (en) * | 2003-10-14 | 2004-05-27 | Oki Electric Ind Co Ltd | Method of spin coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2657392B2 (en) | 1997-09-24 |
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