JP2657392B2 - Rotary processing device - Google Patents

Rotary processing device

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Publication number
JP2657392B2
JP2657392B2 JP63118009A JP11800988A JP2657392B2 JP 2657392 B2 JP2657392 B2 JP 2657392B2 JP 63118009 A JP63118009 A JP 63118009A JP 11800988 A JP11800988 A JP 11800988A JP 2657392 B2 JP2657392 B2 JP 2657392B2
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JP
Japan
Prior art keywords
support
semiconductor wafer
rotation
spin chuck
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63118009A
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Japanese (ja)
Other versions
JPH01287940A (en
Inventor
雅司 森山
修 平河
Original Assignee
東京エレクトロン株式会社
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Priority to JP63118009A priority Critical patent/JP2657392B2/en
Publication of JPH01287940A publication Critical patent/JPH01287940A/en
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Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、回転処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a rotation processing device.
(従来の技術) 半導体製造装置例えばスピン方式のレジスト塗布・現
像装置では、一般に、第5図(a)に示すように真空吸
引口(1)を有する回転保持体例えばスピンチャック
(2)により半導体ウェハ(3)を吸着保持し、上記ス
ピンチャック(2)をモータ(4)等により回転するこ
とが行われている。
(Prior Art) In a semiconductor manufacturing apparatus such as a spin-type resist coating / developing apparatus, generally, as shown in FIG. 5 (a), a semiconductor is rotated by a rotating holder such as a spin chuck (2) having a vacuum suction port (1). The wafer (3) is held by suction, and the spin chuck (2) is rotated by a motor (4) or the like.
この回転は、例えば回転数が最大8.000rpm程度、回転
加速度が10.000〜50.000rpm/sec程度と高速回転が用い
られる。
For this rotation, a high-speed rotation is used, for example, at a maximum rotation speed of about 8.000 rpm and a rotation acceleration of about 10.000 to 50.000 rpm / sec.
また、上記スピンチャック(2)は、半導体ウェハ
(3)を吸着したまま上記のように高速・高加速度回転
させるので、その吸着の信頼性を高くするために、上記
スピンチャック(2)の吸着面の構造は非常に重要であ
る。従来、例えば第5図(b)及び(c)に示すよう
に、スピンチャック(5)(6)の中央部分に真空吸引
口(7)を設け、周縁部に環状の台部(8)、半導体ウ
ェハ(3)を支える環状の台部(9)(10)を同心円状
に設ける。また、上記台部(9)(10)のそれぞれの中
間には、環状の溝(11)、放射状の溝(12)が形成され
ており、真空吸引口(7)に連通されて真空吸引通路を
形成する。なお、第5図(c)の環状の台部(10)は、
第5図(b)の環状の台部(9)を変形したもので、半
導体ウェハ(3)とスピンチャック(6)の接触面積を
下げるために肉厚を薄く形成したものである。
Further, since the spin chuck (2) rotates at high speed and high acceleration as described above while holding the semiconductor wafer (3), the suction of the spin chuck (2) is performed in order to increase the reliability of the suction. The surface structure is very important. Conventionally, for example, as shown in FIGS. 5 (b) and (c), a vacuum suction port (7) is provided at the center of the spin chucks (5) and (6), and an annular base (8) is provided at the peripheral edge. Annular pedestals (9) and (10) for supporting the semiconductor wafer (3) are provided concentrically. An annular groove (11) and a radial groove (12) are formed in the middle of each of the bases (9) and (10), and communicate with the vacuum suction port (7) to form a vacuum suction passage. To form The annular base (10) in FIG. 5 (c)
FIG. 5 (b) is a modification of the annular base (9), which is formed to be thin to reduce the contact area between the semiconductor wafer (3) and the spin chuck (6).
(発明が解決しようとする課題) しかしながら、上述の従来装置には次のような問題が
ある。
(Problems to be Solved by the Invention) However, the above-described conventional apparatus has the following problems.
スピンチャック(2)は半導体ウェハ(3)を吸着し
た状態で高速・高加速度で回転するので、上記スピンチ
ャック(2)と半導体ウェハ(3)裏面間で接触圧が高
い状態の摩擦を生じる。この摩擦によりダストが発生
し、このダストが連続する処理工程において半導体ウェ
ハ(3)のパターン形成面に付着してパターン欠陥を発
生したり、また半導体ウェハ(3)の裏面に異物として
付着し例えば露光工程での焦点ずれを発生したりして、
半導体素子の製造工程において歩留りを下げる原因の一
つとなっていた。
Since the spin chuck (2) rotates at high speed and high acceleration while holding the semiconductor wafer (3), friction occurs in a state where the contact pressure is high between the spin chuck (2) and the back surface of the semiconductor wafer (3). Dust is generated due to the friction, and the dust adheres to the pattern forming surface of the semiconductor wafer (3) in a continuous processing step to generate a pattern defect, or adheres as a foreign matter to the back surface of the semiconductor wafer (3), for example. Such as defocus in the exposure process,
This has been one of the causes for lowering the yield in the semiconductor device manufacturing process.
上記点を解決する方法として、ダスト発生の原因であ
る半導体ウェハ(3)とスピンチャック(2)との接触
面圧を低減させる方法、スピンチャック(2)の回転数
・加速度を下げる方法、スピンチャック(2)を洗浄す
る方法、スピンチャック(2)の静電気を除去して発生
したダストの付着を防止する方法等が試みられている
が、何れも十分な効果は得られていない。
As a method for solving the above points, a method of reducing the contact surface pressure between the semiconductor wafer (3) and the spin chuck (2) which causes dust, a method of reducing the rotation speed and acceleration of the spin chuck (2), A method of cleaning the chuck (2) and a method of removing static electricity from the spin chuck (2) to prevent adhesion of generated dust and the like have been tried, but none of them has been able to obtain a sufficient effect.
すなわち、半導体製造工程における例えばレジスト処
理プロセスには、上述したような回転数・加速度が必要
不可決であり、この条件を満たさないと所望する均一な
レジスト膜厚が得られない。
That is, for example, in the resist processing process in the semiconductor manufacturing process, the rotation speed and acceleration as described above are indispensable, and unless these conditions are satisfied, a desired uniform resist film thickness cannot be obtained.
一方、上記高速回転数・高加速度を得るには、半導体
ウェハ(3)とスピンチャック(2)との接触面積・面
圧共に大きくすればよいが、半導体ウェハ(3)は一般
に厚さが0.5mm程度と薄く、面圧が大きいと機械的歪を
受けて変形したりする不都合がある。又、スピンチャッ
ク(2)に付着するダストを減少させるために、スピン
チャック(2)の洗浄を行う場合は、洗浄の頻度を上げ
ないと効果が薄い。
On the other hand, in order to obtain the above-mentioned high-speed rotation speed and high acceleration, both the contact area and the surface pressure between the semiconductor wafer (3) and the spin chuck (2) may be increased, but the semiconductor wafer (3) generally has a thickness of 0.5. It is as thin as about mm, and if the surface pressure is large, there is an inconvenience that it is deformed due to mechanical strain. Further, when cleaning the spin chuck (2) in order to reduce dust adhering to the spin chuck (2), the effect is weak unless the frequency of cleaning is increased.
本発明は上述の従来事情に対処してなされたもので、
ダストの発生が少なく半導体の歩留りが高い半導体製造
装置を提供しようとするものである。
The present invention has been made in view of the above conventional circumstances,
An object of the present invention is to provide a semiconductor manufacturing apparatus which generates little dust and has a high semiconductor yield.
〔発明の構成〕[Configuration of the invention]
(課題を解決するための手段) すなわち本発明は、回転支持面に被処理体を吸着した
状態で回転する回転体を有し、前記被処理体に所定の処
理を施す回転処理装置であって、前記回転支持面には、
弾性変形可能な支持部材が部分的に設けられており、前
記被処理体が前記支持部材に接触した状態で前記回転支
持面に吸着され前記回転体が回転した際に、前記支持部
材が回転方向に弾性変形することを特徴とする回転処理
装置を提供するものである。また、上記装置において、
前記支持部材が前記回転支持面に放射状に設けられてい
ることを特徴とする回転処理装置を提供するものであ
る。
(Means for Solving the Problems) That is, the present invention is a rotary processing apparatus that includes a rotating body that rotates with a processing object being attracted to a rotation support surface, and performs a predetermined process on the processing object. , On the rotation support surface,
An elastically deformable support member is partially provided, and when the object to be processed is attracted to the rotation support surface in a state of being in contact with the support member and the rotary body rotates, the support member rotates in the rotation direction. The present invention provides a rotation processing device characterized by being elastically deformed. In the above device,
It is an object of the present invention to provide a rotation processing device, wherein the support member is provided radially on the rotation support surface.
(作 用) このような構成を有する本発明によれば、被処理体が
支持部材に接触した状態で前記回転支持面に吸着され前
記回転体が回転した際に、回転支持面に部分的に設けら
れている支持部材が回転方向に弾性変形し、被処理体と
回転支持面との間の滑り発生を防止することができる。
また、支持部材を放射状に設けることによりこのような
滑り発生防止機能が一層高まる。
(Operation) According to the present invention having such a configuration, when the object to be processed is attracted to the rotation support surface in a state of being in contact with the support member and the rotary body rotates, the rotation support surface is partially formed. The provided support member is elastically deformed in the rotation direction, and it is possible to prevent the occurrence of slip between the workpiece and the rotation support surface.
Further, by providing the support members radially, such a function of preventing occurrence of slippage is further enhanced.
(実施例) 以下、本発明回転処理装置をレジスト塗布装置に適用
した一実施例を第1図を参照して説明する。基台(13)
にはモータ(14)が立設されている。このモータ(14)
の回転軸部分には被処理体例えば半導体ウェハ(15)を
真空(負圧)により回転支持面に吸着保持して回転する
回転支持体例えばスピンチャック(16)が取着されてい
る。そして、上記モータ(14)を回転制御することによ
り、上記半導体ウェハ(15)を回転例えば最大回転数80
00rpm程度、回転加速度5000〜50.000rpm/sec程度で回転
可能に構成されている。
(Embodiment) An embodiment in which the rotation processing apparatus of the present invention is applied to a resist coating apparatus will be described below with reference to FIG. Base (13)
Is provided with a motor (14). This motor (14)
A rotating support, for example, a spin chuck (16), is attached to the rotating shaft portion of the rotating support, which rotates while holding the object to be processed, such as a semiconductor wafer (15), on a rotating support surface by vacuum (negative pressure). By controlling the rotation of the motor (14), the semiconductor wafer (15) is rotated, for example, at a maximum rotation speed of 80.
It is configured to be rotatable at about 00 rpm and at a rotational acceleration of about 5000 to 50.000 rpm / sec.
一方、上記スピンチャック(16)の回転中心付近の上
方には、半導体ウェハ(15)に向ってレジスト(17)を
滴下するノズル(18)が配置され、また上記半導体ウェ
ハ(15)の周辺部を取囲む如くカバー(19)が設けられ
ている。
On the other hand, above the vicinity of the rotation center of the spin chuck (16), a nozzle (18) for dropping a resist (17) toward the semiconductor wafer (15) is arranged. A cover (19) is provided to surround the cover.
そして、半導体ウェハ(15)上にレジスト(17)を滴
下した後、上記半導体ウェハ(15)を回転して遠心力に
より上記レジスト(17)を広げて半導体ウェハ(15)表
面にレジスト膜(20)を形成し、また上記半導体ウェハ
(15)の外周より外方向に飛散した余分のレジストの飛
散を防止するように構成されている。
Then, after a resist (17) is dropped on the semiconductor wafer (15), the resist (17) is spread by centrifugal force by rotating the semiconductor wafer (15), and a resist film (20) is formed on the surface of the semiconductor wafer (15). ), And is configured to prevent scattering of extra resist scattered outward from the outer periphery of the semiconductor wafer (15).
次に、上記スピンチャック(16)の吸着面側には、第
2図第3図に示すように、中央上部付近に真空吸引口
(21)を設け、周縁部に環状をなす台部(22)が設けら
れている。また、上記スピンチャック(16)の半導体ウ
ェハ(15)支持面には弾性変形する支持部材(23)が部
分的に、かつ放射状に設けられている。この支持材(2
3)は半導体ウェハ(15)を回転させる際、半導体ウェ
ハ(15)裏面と支持面との摩擦の発生を吸収する作用を
呈する弾性材が用いられる。
Next, on the suction surface side of the spin chuck (16), a vacuum suction port (21) is provided near the upper center as shown in FIG. 2 and FIG. ) Is provided. An elastically deformable support member (23) is provided partially and radially on the support surface of the semiconductor wafer (15) of the spin chuck (16). This support (2
In 3), when rotating the semiconductor wafer (15), an elastic material having an action of absorbing the generation of friction between the back surface of the semiconductor wafer (15) and the support surface is used.
例えば、半導体ウェハ(15)との接触部が巾Tの帯状
弾性片を支持材(23)として第2図に示す如く配置す
る。すなわち、上記半導体ウェハ(15)を支える台部の
役目をする複数の回転方向に弾性変形する支持材例えば
ポリアセタール樹脂製の支持材(23)が、スピンチャッ
ク(16)の中心を通る直線に添う如く接着剤その他の手
段を用いて配置固着されている。上記支持材(23)は支
持面から突出してもよいし、機能を失なわない程度に埋
め込まれてもよいし、また、一様な面を形成してもよ
い。
For example, a band-shaped elastic piece having a width T at a contact portion with the semiconductor wafer (15) is disposed as a support member (23) as shown in FIG. That is, a plurality of supports elastically deformed in a plurality of rotational directions, for example, a support material (23) made of a polyacetal resin, serving as a platform supporting the semiconductor wafer (15), follow a straight line passing through the center of the spin chuck (16). It is arranged and fixed using an adhesive or other means as described above. The support member (23) may protrude from the support surface, may be embedded so as not to lose its function, or may form a uniform surface.
そして、上記支持材(23)間には、スピンチャック
(16)の中心から放射状に溝(24)が複数形成され、ま
た同心円状に溝(25)が複数形成されており、上記溝
(24)(25)は真空吸引口(21)に連通し、半導体ウェ
ハ(15)を吸着保持可能に構成されている。なお、真空
吸引口(21)の周囲に設けた4個の突起(26)も半導体
ウェハ(15)の支持材である。
A plurality of grooves (24) are formed radially from the center of the spin chuck (16) between the support members (23), and a plurality of grooves (25) are formed concentrically. The (25) communicates with the vacuum suction port (21) so that the semiconductor wafer (15) can be suction-held. The four projections (26) provided around the vacuum suction port (21) are also support members for the semiconductor wafer (15).
上記スピンチャック(16)を例えばポリアセタール樹
脂で製作する場合には、上記支持材(23)とスピンチャ
ック(16)は一体物として製作される。
When the spin chuck (16) is made of, for example, a polyacetal resin, the support (23) and the spin chuck (16) are manufactured as an integral body.
次に、動作作用について説明する。 Next, the operation and operation will be described.
先ず、搬送アーム機構等からなる搬送機構(図示せ
ず)によりレジスト塗布前の半導体ウェハ(15)をスピ
ンチャック(16)に載置し吸着保持する。次に、ノズル
(18)から上記半導体ウェハ(15)に向けてレジスト
(17)を所定量滴下した後、モータ(14)を回転制御し
て半導体ウェハ(15)を低速回転して、上記レジスト
(17)を広げる。一定時間上記低速回転を行った後、モ
ータ(14)を回転制御して半導体ウェハ(15)を高速回
転させて塗布処理する。
First, the semiconductor wafer (15) before resist application is placed on a spin chuck (16) and held by suction by a transfer mechanism (not shown) including a transfer arm mechanism and the like. Next, after a predetermined amount of the resist (17) is dropped from the nozzle (18) toward the semiconductor wafer (15), the motor (14) is controlled to rotate the semiconductor wafer (15) at a low speed, and the resist (17) is rotated. Expand (17). After the low-speed rotation is performed for a certain period of time, the motor (14) is controlled to rotate, and the semiconductor wafer (15) is rotated at a high speed to perform a coating process.
このとき、スピンチャック(16)は急激に回転加速さ
れ高速回転するので、このスピンチャック(16)に吸着
されている半導体ウェハ(15)との接触部において滑り
が発生するのは避け難く、摩擦によるダストのようなパ
ーティクルが発生し易い。
At this time, since the spin chuck (16) is rapidly accelerated and rotated at a high speed, it is inevitable that a slip occurs at a contact portion with the semiconductor wafer (15) adsorbed on the spin chuck (16). Particles such as dust are easily generated.
従来のスピンチャックにおいては、半導体ウェハ(1
5)と接触する台部は回転方向に長い、すなわち滑り方
向に長く弾性の全んどない構成の台部であり、半導体ウ
ェハ(15)と上記台部とが著しく高い加速度を受けた場
合に微少の滑りを生じ摩擦によりダスト発生の原因とな
っていた。
In a conventional spin chuck, a semiconductor wafer (1
The pedestal contacting with 5) is a pedestal that is long in the rotational direction, that is, long in the sliding direction and has no elasticity. When the semiconductor wafer (15) and the pedestal receive a significantly high acceleration, A slight slippage caused friction and caused dust.
これに比べて本発明の場合には、上記台部の役目をす
る支持材(23)は、半導体ウェハ(15)との接触部が巾
の狭い帯状であり、且つスピンチャック(16)の中心を
通る直線に沿う如く上記支持材(23)を設けているの
で、半導体ウェハ(15)とスピンチャック(16)間に滑
りが発生しても上記支持材(23)が回転方向に微少変形
可能である。したがって、上記滑りが支持材(23)に吸
収される如く機能するのでこの支持材(23)と半導体ウ
ェハ(15)間の摩擦によるダストの発生を防止すること
ができる。
On the other hand, in the case of the present invention, the support member (23) serving as the base has a narrow band-shaped contact portion with the semiconductor wafer (15), and the center of the spin chuck (16). The support material (23) is provided along the straight line passing through, so that even if a slip occurs between the semiconductor wafer (15) and the spin chuck (16), the support material (23) can be slightly deformed in the rotation direction. It is. Therefore, the above-mentioned sliding works so as to be absorbed by the support member (23), so that generation of dust due to friction between the support member (23) and the semiconductor wafer (15) can be prevented.
例えば、第4図に示すように、パーティクル数は、半
導体ウェハ(15)の支持材(23)又は台部の巾Tが1.0m
m程度以下の領域において、従来の場合よりも減少して
いる。
For example, as shown in FIG. 4, the number of particles is such that the width T of the support (23) or the base of the semiconductor wafer (15) is 1.0 m.
In the region of about m or less, the value is smaller than in the conventional case.
なお、支持材(23)の巾Tが薄くなるほど半導体ウェ
ハ(15)との接触面積が減少するため、パーティクル数
は減少している。
Note that the smaller the width T of the support member (23), the smaller the contact area with the semiconductor wafer (15), so that the number of particles decreases.
しかし、半導体ウェハ(15)を吸着する吸着力を一定
とすれば、接触面積を小さくした場合接触面圧が上るた
め接触部での摩擦が大きくなり、逆に接触面積を大きく
した場合には接触面圧は下るが摩擦面が大きくなり且つ
支持材(23)の弾性機能は低下するので、接触部分での
ダストの発生がありパーティクル数が減少せず、どうし
ても有効範囲が制限される。
However, if the suction force for suctioning the semiconductor wafer (15) is fixed, the contact surface pressure increases when the contact area is reduced, so that the friction at the contact portion increases. Conversely, when the contact area is increased, the contact area increases. Although the surface pressure is reduced, the friction surface is increased and the elastic function of the support member (23) is reduced. Therefore, dust is generated at the contact portion, the number of particles is not reduced, and the effective range is inevitably limited.
半導体ウェハ(15)を高速回転させて所望の厚さの膜
厚になるとモータ(14)の回転を停止し、半導体ウェハ
(15)を搬送機構(図示せず)によりスピンチャック
(16)から取出してレジスト塗布装置外に搬出する。
When the semiconductor wafer (15) is rotated at high speed to a desired thickness, the rotation of the motor (14) is stopped, and the semiconductor wafer (15) is removed from the spin chuck (16) by a transfer mechanism (not shown). Out of the resist coating device.
なお、上記実施例では、スピンチャック、半導体ウェ
ハの支持材として、上記半導体ウェハとの断熱性を高く
し且つ一般に上記半導体ウェハの材質がシリコンであり
硬さのバランスを考慮して、ポリアセタール樹脂を使用
したが、同一硬度を有する例えば三弗化エチレン樹脂系
およびこれに炭素を添化した導電性樹脂等を使用して
も、ポリアセタール樹脂の場合とほぼ同等の効果を上げ
ることができる。
In the above embodiment, as a support material for the spin chuck and the semiconductor wafer, a polyacetal resin is used, which has a high heat insulating property with respect to the semiconductor wafer and is generally made of silicon, and the balance of hardness is taken into consideration. Although used, the same effect as that of the polyacetal resin can be obtained by using, for example, an ethylene trifluoride resin having the same hardness and a conductive resin to which carbon is added.
また、上記実施例のスピンチャックは、上記のように
ダストの発生が少ないので、吸着保持して回転処理する
他の装置、例えば半導体製造におけるスピン式現像装
置、洗浄装置、イオン注入装置、レーザ熱処理装置等に
使用しても有効である。
Further, since the spin chuck of the above-described embodiment generates little dust as described above, other devices that perform suction and hold and perform a rotation process, such as a spin developing device, a cleaning device, an ion implantation device, and a laser heat treatment in semiconductor manufacturing. It is also effective when used for devices.
さらに、被処理体は半導体ウェハに限らず、回転処理
する装置であれば何れでもよく例えば液晶駆動回路、プ
リント基板等何れでもよい。
Furthermore, the object to be processed is not limited to a semiconductor wafer, and may be any device that performs a rotation process, such as a liquid crystal drive circuit or a printed circuit board.
さらに、上記実施例ではレジスト塗布について説明し
たが、処理であれば何れでもよく、例えば現像液の塗布
に適用してもよい。
Further, in the above-described embodiment, the resist coating has been described. However, any processing may be applied, and for example, the resist coating may be applied to the application of a developer.
〔発明の効果〕〔The invention's effect〕
上述したように、本発明装置によれば、ダストの発生
が少く半導体など被処理体の歩留りを高くすることが可
能となる。
As described above, according to the apparatus of the present invention, it is possible to increase the yield of an object to be processed such as a semiconductor with less generation of dust.
【図面の簡単な説明】[Brief description of the drawings]
第1図は本発明半導体製造装置をレジスト塗布装置に適
用した一実施例を示す構成図、第2図は第1図の主要部
の説明図、第3図は第2図縦断面図、第4図は第1図の
一特性例図、第5図は従来例の説明図である。 14……モータ、15……半導体ウェハ、 16……スピンチャック、21……真空吸引口、 22……台部、23……支持材、 24、25……溝。
FIG. 1 is a block diagram showing an embodiment in which the semiconductor manufacturing apparatus of the present invention is applied to a resist coating apparatus, FIG. 2 is an explanatory view of a main part of FIG. 1, FIG. 3 is a longitudinal sectional view of FIG. FIG. 4 is a diagram showing one characteristic example of FIG. 1, and FIG. 5 is an explanatory diagram of a conventional example. 14 ... Motor, 15 ... Semiconductor wafer, 16 ... Spin chuck, 21 ... Vacuum suction port, 22 ... Stand, 23 ... Support material, 24, 25 ... Groove.

Claims (2)

    (57)【特許請求の範囲】(57) [Claims]
  1. 【請求項1】回転支持面に被処理体を吸着した状態で回
    転する回転体を有し、前記被処理体に所定の処理を施す
    回転処理装置であって、前記回転支持面には、弾性変形
    可能な支持部材が部分的に設けられており、前記被処理
    体が前記支持部材に接触した状態で前記回転支持面に吸
    着され前記回転体が回転した際に、前記支持部材が回転
    方向に弾性変形することを特徴とする回転処理装置。
    1. A rotary processing apparatus which has a rotating body which rotates with an object to be processed attracted to a rotation supporting surface, and performs a predetermined process on the object to be processed, wherein the rotation supporting surface has an elasticity. A deformable support member is partially provided, and when the object to be processed is attracted to the rotation support surface in a state of being in contact with the support member and the rotator rotates, the support member moves in the rotation direction. A rotation processing device characterized by being elastically deformed.
  2. 【請求項2】前記支持部材は、前記回転支持面に放射状
    に設けられていることを特徴とする請求項1に記載の回
    転処理装置。
    2. The rotation processing apparatus according to claim 1, wherein the support member is provided radially on the rotation support surface.
JP63118009A 1988-05-13 1988-05-13 Rotary processing device Expired - Lifetime JP2657392B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63118009A JP2657392B2 (en) 1988-05-13 1988-05-13 Rotary processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63118009A JP2657392B2 (en) 1988-05-13 1988-05-13 Rotary processing device

Publications (2)

Publication Number Publication Date
JPH01287940A JPH01287940A (en) 1989-11-20
JP2657392B2 true JP2657392B2 (en) 1997-09-24

Family

ID=14725796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63118009A Expired - Lifetime JP2657392B2 (en) 1988-05-13 1988-05-13 Rotary processing device

Country Status (1)

Country Link
JP (1) JP2657392B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3925965B2 (en) * 1996-09-26 2007-06-06 芝浦メカトロニクス株式会社 Substrate processing equipment
JP4028346B2 (en) * 2002-10-17 2007-12-26 東京エレクトロン株式会社 Liquid processing equipment
JP4305750B2 (en) * 2003-10-14 2009-07-29 Okiセミコンダクタ株式会社 Spin coating method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63256326A (en) * 1987-04-15 1988-10-24 Hitachi Ltd Vacuum chuck and manufacture thereof

Also Published As

Publication number Publication date
JPH01287940A (en) 1989-11-20

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