JPS60259372A - Both face polishing - Google Patents
Both face polishingInfo
- Publication number
- JPS60259372A JPS60259372A JP59114100A JP11410084A JPS60259372A JP S60259372 A JPS60259372 A JP S60259372A JP 59114100 A JP59114100 A JP 59114100A JP 11410084 A JP11410084 A JP 11410084A JP S60259372 A JPS60259372 A JP S60259372A
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- workpiece
- holding hole
- work
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は高密度磁気ディスク基板やシリコンウェハの両
面を精密に仕上げる場合の平担度および微少ピッチうね
り特性の改善に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to improvement of flatness and fine pitch waviness characteristics when precisely finishing both sides of a high-density magnetic disk substrate or a silicon wafer.
〈従来例〉
近年、磁気ディスク装置の記録の高密度化に伴ない、デ
ィスク基板の表面機械精度は、平担度spm/面(4”
)、微少ビ、テうねり0.1 pm/ 4 mm程度の
精度が要求されている。また従来片面のみしか利用され
ていなかったシリコンウェハも両面を精密に仕上げ、そ
の両面に電子部品を搭載することによシリコンウェハの
有効利用をはかることが考えられている。<Conventional example> In recent years, as the recording density of magnetic disk devices has become higher, the surface mechanical accuracy of the disk substrate has been reduced to a degree of flatness spm/surface (4”
), micro-vibration and Tee waviness accuracy of approximately 0.1 pm/4 mm is required. In addition, it is being considered that silicon wafers, which were conventionally only used on one side, can be used more effectively by precisely finishing both sides and mounting electronic components on both sides.
第4図は従来から用いられているディスク基板の両面ポ
リ、シンク方法を示す平面図である。第4図において、
1は太陽ギヤ、2はインターナル4枚)岬間隔に配置さ
れている。キャリア4には円板状の被加工物保持孔(以
下保持孔という)7が複数個(図では4個)等間隔に設
けられ、その保持孔7のそれぞれに円板状の被加工物8
が遊嵌されている。なお、キャリア4の上には下定盤3
とハホ同面積の上定盤(図示せず)が被せられる。FIG. 4 is a plan view showing a conventional double-sided polygon and sink method for disk substrates. In Figure 4,
1 is the sun gear, 2 is the internal 4 pieces) arranged at cape intervals. A plurality of disc-shaped workpiece holding holes (hereinafter referred to as "holding holes") 7 are provided in the carrier 4 at equal intervals (four holes in the figure), and a disc-shaped workpiece 8 is provided in each of the holding holes 7.
is loosely fitted. In addition, the lower surface plate 3 is placed on top of the carrier 4.
An upper surface plate (not shown) having the same area as the upper surface plate is placed on the upper surface plate (not shown).
上記構成において、例えば上下定盤が互いに逆方向に所
定の回転数で回転し、イ1.ンターナルギャが矢印入方
向に回転すると、キャリア4は矢印C方向に自転しなが
ら矢印d方向に太陽ギヤの周りを公転し、上下定盤に取
シ付けられたポリシャ(図示せず)により挾持された被
加工物8がボリッシェされる。In the above configuration, for example, the upper and lower surface plates rotate in opposite directions to each other at a predetermined number of rotations; When the internal gear rotates in the direction of the arrow, the carrier 4 revolves around the sun gear in the direction of arrow D while rotating in the direction of arrow C, and is held by polishers (not shown) attached to the upper and lower surface plates. The workpiece 8 is bolished.
ところで上記構成の両面ポリッシング方法においては、
保持孔7と被加工物8がいずれも円板状をしておυ、か
つ被加工物8が保持孔7に遊嵌された状態にあるので、
第5図に示す如く、被加工物8は矢印d方向に移動しつ
つ矢印B方向に保持孔7内で回転する。その結果、被加
工物8の内周側と外周側で周速の差によるボリッシェ量
のバラツキが生じ、例えば第6図に断面図にて示す如く
、被加工物8の外周部Fで示した部分が先細の状態とな
り、平坦度が悪くなると共に微少ピッチうねりの原因と
もなっていた。By the way, in the double-sided polishing method with the above configuration,
Since both the holding hole 7 and the workpiece 8 are disc-shaped, and the workpiece 8 is loosely fitted into the holding hole 7,
As shown in FIG. 5, the workpiece 8 rotates within the holding hole 7 in the direction of arrow B while moving in the direction of arrow d. As a result, variations in the amount of bolishing occur due to the difference in circumferential speed between the inner and outer circumferential sides of the workpiece 8, and for example, as shown in the cross-sectional view in FIG. The portion became tapered, resulting in poor flatness and causing slight pitch waviness.
保持孔の中で被加工物の回転を防止する従来方法として
は、例えば第7図に示す如く、円板状の被加工物20の
一部を切り落し、保持孔21を被加工物20よりわずか
に大きな形状の相似形とし、被加工物20が保持孔21
の中で回転しないようにしたものがある。しかしながら
、上記の如き円板の一部を切り落したものは、例えば磁
気ディスクとしては用いることができず、また電子部品
を搭載するシリコンウェハに用いた場合、比較的大きな
面積が無駄になるという欠点がある。A conventional method for preventing rotation of a workpiece in a holding hole is to cut off a part of a disc-shaped workpiece 20 and make the holding hole 21 slightly smaller than the workpiece 20, as shown in FIG. 7, for example. The workpiece 20 has a similar shape with a larger shape than the holding hole 21.
There is something inside that prevents it from rotating. However, a disk with a part cut off as described above cannot be used as a magnetic disk, and when used as a silicon wafer on which electronic components are mounted, a relatively large area is wasted. There is.
〈発明の目的〉
本発明は上記従来技術に鑑みてなされたもので、平坦度
および微少ピッチリねシのない平面加工を実現すること
を目的とする。<Objective of the Invention> The present invention has been made in view of the above-mentioned prior art, and an object of the present invention is to realize flat processing without flatness and minute pitch warping.
〈発明の構成〉
この目的を達成する本発明の構成は、上下定盤と、これ
らの定盤間においてインターナルギヤおよび太陽ギヤと
かみ合うキャリアとを備え、前記キャリアを自転および
公転させ、前記キャリアに保持された円板状の被加工物
を前記上下定盤で挾持してポリ、シンクする方法におい
て、前記キャリアの保持孔の内周に少々くとも一つの突
起部を設けると共に、前記円板状に被加工物にノツチを
設け、前記突起部に前記ノツチを係合させてポリ、シン
クすることを構成上の特徴とするものである。<Configuration of the Invention> The configuration of the present invention that achieves this object includes upper and lower surface plates, and a carrier that meshes with an internal gear and a sun gear between these surface plates, and rotates and revolves the carrier. In the method of sandwiching and sinking a disk-shaped workpiece held by the upper and lower surface plates, at least one protrusion is provided on the inner periphery of the holding hole of the carrier; The structure is characterized in that a notch is provided in the workpiece in a shape, and the notch is engaged with the protrusion to perform poly-sinking.
〈実施例〉
第1図(a)、 (b)は本発明の一実施例を示す平面
図である。第1図(a)、 (b)において10はキャ
リアであシ、13はキャリア10に複数個(図では4個
)設けられた保持孔、11は保持孔13の内周に設けら
れた突起部、14は被加工物、15はノツチで、このノ
ツチ15は突起部11よりもわずかに大きく加工される
〇第2図はキャリア10の保持孔13に被加工物14を
遊嵌した状態を示す平面図である。第2図によれば、キ
ャリア10の保持孔13の内周に設けた突起部11に、
被加工物14に設けたノツチ15が係合して遊嵌される
ので、キャリア10が矢印d方向に自転および公転運動
を行々っても保持孔13の中で被加工物14が回転する
ことがない。<Embodiment> FIGS. 1(a) and 1(b) are plan views showing an embodiment of the present invention. In FIGS. 1(a) and 1(b), 10 is a carrier, 13 is a plurality of holding holes (four in the figure) provided in the carrier 10, and 11 is a protrusion provided on the inner periphery of the holding hole 13. 14 is a workpiece, 15 is a notch, and the notch 15 is machined to be slightly larger than the protrusion 11. Figure 2 shows a state in which the workpiece 14 is loosely fitted into the holding hole 13 of the carrier 10. FIG. According to FIG. 2, on the protrusion 11 provided on the inner circumference of the holding hole 13 of the carrier 10,
Since the notch 15 provided in the workpiece 14 is engaged and loosely fitted, the workpiece 14 rotates in the holding hole 13 even when the carrier 10 rotates and revolves in the direction of arrow d. Never.
なお、上記実施例においては保持孔の内周に突起を1個
設け、被加工物にこの突起に係合するノツチを1個設け
たが、ノツチは1個に限らず複数個設けてもよい。この
ノツチは例えば被加工物14を磁気ディスク基板として
用いる場合は、第3図に断面図にて示す如く、このノツ
チをオプチカルセンサ40等で検出しインデックス情報
や、セクター情報の取シ出し用として利用することも可
能である。また本実施例においては被加工物を磁気ディ
スクの基板やシリコンウニノーをボリツシニする場合に
ついて説明したが、本例に限るものではないO
〈発明の効果〉
以上、実施例と共に具体的に説明したように、本発明に
よれば、保持孔の中で被加工物が回転することがないの
で、平坦度が高く、微少ピッチうねりのない両面ポリ、
シンクが実現できる。In addition, in the above embodiment, one protrusion was provided on the inner periphery of the holding hole, and one notch was provided on the workpiece to engage with this protrusion, but the number of notches is not limited to one, but a plurality of notches may be provided. . For example, when the workpiece 14 is used as a magnetic disk substrate, as shown in the cross-sectional view in FIG. It is also possible to use In addition, in this embodiment, the case where the workpiece is a magnetic disk substrate or a silicon unicorn is explained, but the invention is not limited to this example. According to the present invention, the workpiece does not rotate in the holding hole, so the double-sided polyester material has high flatness and no minute pitch waviness.
A sink can be realized.
【図面の簡単な説明】
第1図(a)、 (b)は本発明の一実施例を示すキャ
リアおよび被加工物の平面図、第2図はキャリアの保持
孔に被加工物を遊嵌した状態を示す平面図、第3図は被
加工物を磁気ディスクに用いた場合の断面図、第4図に
1第5図は従来例を示す平面図第6図は従来例によって
ボリッシェした被加工物の仕上がり状態を示す断面図、
第7図は従来の被加工物回転防止例を示す平面図である
。
10・・・キャリア、11・・・突起部、13・・・被
加工物保持孔、14・・・被加工物、15・・・ノツチ
。[Brief Description of the Drawings] Figures 1(a) and 1(b) are plan views of a carrier and a workpiece showing an embodiment of the present invention, and Figure 2 shows a workpiece loosely fitted into a holding hole of the carrier. FIG. 3 is a cross-sectional view of the workpiece used in a magnetic disk; FIG. 4 is a plan view of the conventional example; FIG. A cross-sectional view showing the finished state of the workpiece,
FIG. 7 is a plan view showing a conventional example of workpiece rotation prevention. DESCRIPTION OF SYMBOLS 10...Carrier, 11...Protrusion part, 13...Workpiece holding hole, 14...Workpiece, 15...Notch.
Claims (1)
および太陽ギヤとかみ合うキャリアとを備え、前記キャ
リアを自転および公転させ、前記キャリアに保持された
円板状の被加工物を前記上へ 下定盤で挾持してポリ、
シンクする方法において、前記キャリアの被加工物保持
孔の内周に少なくとも一つの突起部を設けると共に、前
記円板状の被加工物にノツチを設け、前記突起部に前記
ノツチを係合させてポリッシングすることを特徴とする
ポリッシング方法。The method includes upper and lower surface plates, and a carrier that engages with an internal gear and a sun gear between these surface plates, and rotates and revolves the carrier to lower the disk-shaped workpiece held by the carrier to the upper surface. Hold it with a board and poly,
In the sinking method, at least one protrusion is provided on the inner periphery of the workpiece holding hole of the carrier, a notch is provided in the disc-shaped workpiece, and the notch is engaged with the protrusion. A polishing method characterized by polishing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59114100A JPS60259372A (en) | 1984-06-04 | 1984-06-04 | Both face polishing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59114100A JPS60259372A (en) | 1984-06-04 | 1984-06-04 | Both face polishing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60259372A true JPS60259372A (en) | 1985-12-21 |
Family
ID=14629112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59114100A Pending JPS60259372A (en) | 1984-06-04 | 1984-06-04 | Both face polishing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60259372A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4960548A (en) * | 1986-08-06 | 1990-10-02 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing molded wooden product |
EP0947300A2 (en) * | 1998-04-01 | 1999-10-06 | Nippei Toyama Corporation | An ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus |
WO2000069597A1 (en) * | 1999-05-17 | 2000-11-23 | Kashiwara Machine Mfg. Co., Ltd. | Method and device for polishing double sides |
KR100373503B1 (en) * | 1998-04-09 | 2003-02-25 | 오끼 덴끼 고오교 가부시끼가이샤 | Substrate polishing apparatus and method for polishing semiconductor substrate |
WO2009141961A1 (en) * | 2008-05-22 | 2009-11-26 | 信越半導体株式会社 | Double-head grinding apparatus and wafer manufacturing method |
JP2011161611A (en) * | 2010-02-15 | 2011-08-25 | Shin Etsu Handotai Co Ltd | Method for mounting carrier |
-
1984
- 1984-06-04 JP JP59114100A patent/JPS60259372A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4960548A (en) * | 1986-08-06 | 1990-10-02 | Toyota Jidosha Kabushiki Kaisha | Method of manufacturing molded wooden product |
EP0947300A2 (en) * | 1998-04-01 | 1999-10-06 | Nippei Toyama Corporation | An ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus |
EP0947300A3 (en) * | 1998-04-01 | 2002-04-24 | Nippei Toyama Corporation | An ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus |
KR100373503B1 (en) * | 1998-04-09 | 2003-02-25 | 오끼 덴끼 고오교 가부시끼가이샤 | Substrate polishing apparatus and method for polishing semiconductor substrate |
WO2000069597A1 (en) * | 1999-05-17 | 2000-11-23 | Kashiwara Machine Mfg. Co., Ltd. | Method and device for polishing double sides |
US8002610B2 (en) | 1999-05-17 | 2011-08-23 | Sumitomo Mitsubishi Silicon Corporation | Double side polishing method and apparatus |
WO2009141961A1 (en) * | 2008-05-22 | 2009-11-26 | 信越半導体株式会社 | Double-head grinding apparatus and wafer manufacturing method |
JP2009279704A (en) * | 2008-05-22 | 2009-12-03 | Shin Etsu Handotai Co Ltd | Double head grinder, and wafer manufacturing method |
CN102026774A (en) * | 2008-05-22 | 2011-04-20 | 信越半导体股份有限公司 | Double-head grinding apparatus and wafer manufacturing method |
US8562390B2 (en) | 2008-05-22 | 2013-10-22 | Shin-Etsu Handotai Co., Ltd. | Double-disc grinding apparatus and method for producing wafer |
JP2011161611A (en) * | 2010-02-15 | 2011-08-25 | Shin Etsu Handotai Co Ltd | Method for mounting carrier |
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