JPH0128677Y2 - - Google Patents

Info

Publication number
JPH0128677Y2
JPH0128677Y2 JP11629986U JP11629986U JPH0128677Y2 JP H0128677 Y2 JPH0128677 Y2 JP H0128677Y2 JP 11629986 U JP11629986 U JP 11629986U JP 11629986 U JP11629986 U JP 11629986U JP H0128677 Y2 JPH0128677 Y2 JP H0128677Y2
Authority
JP
Japan
Prior art keywords
container
liquid
chemical solution
tank
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11629986U
Other languages
Japanese (ja)
Other versions
JPS6322732U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11629986U priority Critical patent/JPH0128677Y2/ja
Publication of JPS6322732U publication Critical patent/JPS6322732U/ja
Application granted granted Critical
Publication of JPH0128677Y2 publication Critical patent/JPH0128677Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 産業上の利用分野 本考案は半導体製造装置に関し、詳しくは半導
体装置製造に使用され、半導体ウエーハを薬液処
理する装置に関するものである。
[Detailed Description of the Invention] Industrial Application Field The present invention relates to a semiconductor manufacturing apparatus, and more particularly to an apparatus used in the manufacture of semiconductor devices and for treating semiconductor wafers with a chemical solution.

従来の技術 半導体装置の製造工程において、半導体ウエー
ハ表面に形成された酸化膜や金属膜等をパターン
化するに際しては、上記半導体ウエーハを化学的
に薬液処理するエツチング工程で行うのが一般的
である。またこのエツチング工程後には、エツチ
ング済みの半導体ウエーハ表面を純水等で洗浄す
る洗浄工程があり、これら半導体ウエーハのエツ
チング及び洗浄処理は、複数の半導体ウエーハ
を、キヤリアと称される治具に整列保持した状態
で上記治具を処理液槽内の薬液中に浸漬すること
により行われる。
Prior Art In the manufacturing process of semiconductor devices, when patterning an oxide film, metal film, etc. formed on the surface of a semiconductor wafer, it is common to use an etching process in which the semiconductor wafer is chemically treated. . After this etching process, there is a cleaning process in which the surface of the etched semiconductor wafer is cleaned with pure water, etc. In this etching and cleaning process, multiple semiconductor wafers are aligned on a jig called a carrier. This is done by immersing the jig in a chemical solution in a processing solution tank while it is being held.

以下、上記ウエーハエツチング処理に使用され
る半導体製造装置の従来例を第4図乃至第6図を
参照しながら説明する。第4図において、1は半
導体ウエーハ(以下単にウエーハと称す)、2は
複数のウエーハ1,1…を縦方向に定ピツチで整
列保持する、例えばテフロン(登録商標)製のキ
ヤリアで、半導体装置製造における各工程でのウ
エーハ処理に使用される。このキヤリア2は、第
5図及び第6図に示すように平行に対向する一対
の側板3,3と、両側板3,3の両端を連結する
一対の端板4,4とからなり、両側板3,3の内
面に縦方向に定ピツチで複数のウエーハ収納溝
5,5…が形成され、各ウエーハ収納溝5,5…
にウエーハ1,1…が1枚ずつ収納保持される。
6は上記ウエーハ1の表面に形成された酸化膜や
金属膜等をエツチングする薬液7が収容された処
理液槽で、この処理液槽6の底部に設けられた給
液口8から槽内に薬液7を供給してオーバーフロ
ーさせ、そのオーバーフローした薬液7を、処理
液槽6の外周に設けられた回収槽9で回収して排
液口10から排出する。11は上記処理液槽6の
給液口8と回収槽9の排液口10とを連結する循
環流路、12は排出された薬液7を冷却する冷熱
器、13はポンプ、14は排出された薬液7を濾
過して処理液槽6に再度供給するフイルタであ
る。
Hereinafter, a conventional example of a semiconductor manufacturing apparatus used for the above-mentioned wafer etching process will be explained with reference to FIGS. 4 to 6. In FIG. 4, 1 is a semiconductor wafer (hereinafter simply referred to as a wafer), and 2 is a carrier made of, for example, Teflon (registered trademark), which holds a plurality of wafers 1, 1, etc. in a vertically aligned manner at a constant pitch, and is a carrier for semiconductor devices. It is used for wafer processing in each step of manufacturing. As shown in FIGS. 5 and 6, this carrier 2 consists of a pair of parallel side plates 3, 3 and a pair of end plates 4, 4 connecting both ends of the side plates 3, 3. A plurality of wafer storage grooves 5, 5... are formed at regular pitches in the vertical direction on the inner surfaces of the plates 3, 3, and each wafer storage groove 5, 5...
The wafers 1, 1, . . . are stored and held one by one.
Reference numeral 6 denotes a processing liquid tank containing a chemical solution 7 for etching the oxide film, metal film, etc. formed on the surface of the wafer 1. The chemical solution 7 is supplied to cause an overflow, and the overflowing chemical solution 7 is collected in a recovery tank 9 provided on the outer periphery of the processing solution tank 6 and discharged from a drain port 10. 11 is a circulation channel connecting the liquid supply port 8 of the processing liquid tank 6 and the liquid drain port 10 of the recovery tank 9; 12 is a cooler for cooling the discharged chemical liquid 7; 13 is a pump; This is a filter that filters the chemical liquid 7 and supplies it again to the processing liquid tank 6.

半導体装置製造のエツチング工程において、所
定のポジシヨンに配置されたキヤリア2を、ウエ
ーハ搬送機構(図示せず)により移送して処理液
槽6内の薬液7中に浸漬する。この状態でポンプ
13の駆動力により処理液槽6の給液口8から流
入する薬液7をオーバーフローさせて回収槽9の
排液口10から流出させ、冷熱器12で冷却する
と共にフイルタ14で濾過した上で上記処理液槽
6の給液口8に供給する。上述のようにして循環
する薬液7により該薬液7中に浸漬されたキヤリ
ア2内のウエーハ1,1…をエツチングする。
In an etching process for manufacturing semiconductor devices, a carrier 2 placed at a predetermined position is transferred by a wafer transport mechanism (not shown) and immersed in a chemical solution 7 in a processing solution tank 6. In this state, the driving force of the pump 13 causes the chemical solution 7 flowing in from the liquid supply port 8 of the processing liquid tank 6 to overflow and flow out from the liquid drain port 10 of the recovery tank 9, where it is cooled by the cooler 12 and filtered by the filter 14. Then, it is supplied to the liquid supply port 8 of the processing liquid tank 6. The wafers 1, 1, . . . in the carrier 2 immersed in the chemical solution 7 are etched by the circulating chemical solution 7 as described above.

このウエーハエツチングが完了すると、処理液
槽6内のキヤリア2をウエーハ搬送機構(図示せ
ず)で取出し、上記処理液槽6と同一構造を有す
るウエーハ洗浄用の処理液槽に移送する。このウ
エーハ洗浄工程では、循環する薬液により該薬液
中に浸漬されたキヤリア2内のウエーハ1,1…
を洗浄する。
When this wafer etching is completed, the carrier 2 in the processing liquid tank 6 is taken out by a wafer transport mechanism (not shown) and transferred to a processing liquid tank for wafer cleaning having the same structure as the processing liquid tank 6 described above. In this wafer cleaning process, the wafers 1, 1, . . . in the carrier 2 are immersed in the circulating chemical solution.
Wash.

考案が解決しようとする問題点 ところで、従来の半導体製造装置では、上述し
たように処理液槽6内の薬液7中にキヤリア2を
浸漬し、この状態で上記薬液7を処理液槽6から
オーバーフローさせながら循環させて上記キヤリ
ア2内のウエーハ1,1…を薬液処理している。
この場合、上記処理液槽6内の薬液量が多く、し
かも薬液7のほとんどはキヤリア2の外部を通
り、キヤリア2内のウエーハ1,1…を効率よく
薬液処理できないのみならず、処理槽6内の隅部
の薬液7は置換され難いので、処理液槽6内の薬
液7を効率よく循環フイルタリングするのが困難
で、上記処理液槽6内で汚れが残存してキヤリア
2内のウエーハ1,1…が汚染される虞があつ
た。また上記循環フイルタリングに時間を要して
作業効率も大幅に低下するという問題があつた。
Problems to be Solved by the Invention Incidentally, in the conventional semiconductor manufacturing equipment, the carrier 2 is immersed in the chemical solution 7 in the processing liquid tank 6 as described above, and in this state, the chemical solution 7 overflows from the processing liquid tank 6. The wafers 1, 1, . . . in the carrier 2 are treated with the chemical by circulating the wafers 1, 1, . . .
In this case, the amount of chemical liquid in the processing liquid tank 6 is large, and most of the chemical liquid 7 passes through the outside of the carrier 2, and not only the wafers 1, 1, etc. in the carrier 2 cannot be efficiently processed with the chemical liquid, but also the chemical liquid 7 in the processing tank 6 Since the chemical solution 7 in the inner corner is difficult to be replaced, it is difficult to efficiently circulate and filter the chemical solution 7 in the processing solution tank 6, and dirt remains in the processing solution tank 6, causing the wafers in the carrier 2 to be damaged. There was a risk that 1, 1... would be contaminated. Further, there was a problem in that the above-mentioned circulation filtering required time and work efficiency was significantly reduced.

問題点を解決するための手段 本考案は前記問題点に鑑みて提案されたもの
で、この問題点を解決するための技術的手段は、
上下端部が開口した漏斗形状を有し、且つ、内部
に複数の半導体ウエーハを定ピッチで整列保持し
た保水性の容器と、上記容器の下端開口部が給液
口に連結され、且つ、該給液口から容器の下端開
口部を介して容器内に供給されて半導体ウエーハ
を液処理する薬液を、容器の上端開口部からオー
バーフローさせて回収する液回収槽とを含むもの
である。
Means for solving the problem The present invention was proposed in view of the above problem, and the technical means for solving this problem are as follows:
a water-retentive container having a funnel shape with upper and lower ends open and holding a plurality of semiconductor wafers aligned at a constant pitch; a lower end opening of the container connected to a liquid supply port; The device includes a liquid recovery tank in which a chemical solution that is supplied into the container from the liquid supply port through the lower end opening of the container to treat semiconductor wafers is recovered by overflowing from the upper end opening of the container.

作 用 本考案に係る半導体製造装置によれば、ウエー
ハを薬液処理するに際しては、処理液槽の給液口
から供給された薬液を、上記給液口に連結された
容器内に流入させ、該容器からオーバーフローさ
せながら循環フイルタリングする。上記容器内の
ウエーハを液処理する薬液量を少なくすることが
実現容易となつて効率の良い薬液の循環フイルタ
リングが図れる。
Function According to the semiconductor manufacturing apparatus according to the present invention, when processing a wafer with a chemical liquid, the chemical liquid supplied from the liquid supply port of the processing liquid tank is caused to flow into the container connected to the liquid supply port. Circulate and filter while allowing overflow from the container. It is easy to reduce the amount of chemical liquid used to treat the wafers in the container, and efficient circulation filtering of the chemical liquid can be achieved.

実施例 本考案に係る半導体製造装置の一実施例を第1
図乃至第3図を参照しながら説明する。尚、第4
図乃至第6図と同一部分、又は相当部分には同一
参照符号を付してその説明は省略する。第1図に
示す半導体製造装置15において、16は複数の
ウエーハ1,1…を整列保持した保水製の容器で
ある。この容器16は、第2図及び第3図に示す
ように上下端部16a,16bが開口した漏斗形
状を有し、その側壁部17,17の内面に、前記
キヤリア2のウエーハ収納溝5,5…と同一ピツ
チで縦方向に複数のウエーハ保持溝18,18…
が形成されて各ウエーハ保持溝18,18…にウ
エーハ1,1…が1枚ずつ収納保持される。19
は後述するように上記容器16からオーバーフロ
ーする薬液を回収する液回収槽で、この液回収槽
19の底部には給液口20及び排液口21が設け
られる。ウエーハ液処理時、ウエーハ1,1…を
整列保持した容器16の下端開口部16bが液回
収槽19の上記給液口20に嵌挿された状態で連
結される。22は液回収槽19の給液口20と排
液口21とを連結する循環流路で、この循環流路
22の一部には、ウエーハ洗浄用の純水を容器1
6内に供給する給水路23及び容器16からオー
バーフローした純水を排出する排水路24が連結
される。25は液回収槽19から排出された薬液
7、例えばエツチング液を一旦貯溜する貯液タン
ク、26は該貯液タンク25内の薬液7を冷却す
る冷熱器、27は上記循環流路22内で薬液7を
循環させるための駆動源であるポンプ、28は液
回収槽19から排出された薬液7を濾過して容器
16内に再度供給するフイルタである。29a〜
29dは循環流路22、給水路23及び排水路2
4の所定の箇所に配設され、各流路の開閉を切換
える電磁弁である。
Embodiment A first embodiment of the semiconductor manufacturing apparatus according to the present invention is described below.
This will be explained with reference to FIGS. 3 to 3. Furthermore, the fourth
Components that are the same as or equivalent to those in FIGS. 6 to 6 are given the same reference numerals, and their explanations will be omitted. In the semiconductor manufacturing apparatus 15 shown in FIG. 1, reference numeral 16 is a water-retaining container in which a plurality of wafers 1, 1, . . . are held in alignment. As shown in FIGS. 2 and 3, this container 16 has a funnel shape with upper and lower ends 16a, 16b open, and the wafer storage grooves 5 of the carrier 2, A plurality of wafer holding grooves 18, 18... in the vertical direction with the same pitch as 5...
are formed, and one wafer 1, 1, . . . is housed and held in each wafer holding groove 18, 18, . 19
As will be described later, a liquid recovery tank is used to recover the chemical liquid overflowing from the container 16, and a liquid supply port 20 and a liquid drain port 21 are provided at the bottom of the liquid recovery tank 19. During wafer liquid processing, the lower end opening 16b of the container 16 holding the wafers 1, 1, . Reference numeral 22 denotes a circulation channel that connects the liquid supply port 20 and the liquid drain port 21 of the liquid recovery tank 19. A part of this circulation channel 22 is provided with pure water for wafer cleaning into the container 1.
A water supply channel 23 that supplies water into the container 16 and a drainage channel 24 that discharges pure water overflowing from the container 16 are connected. Reference numeral 25 denotes a liquid storage tank for temporarily storing the chemical liquid 7 discharged from the liquid recovery tank 19, for example, an etching liquid; 26 a cooler for cooling the chemical liquid 7 in the liquid storage tank 25; and 27 a cooler in the circulation flow path 22. A pump 28 that is a driving source for circulating the chemical solution 7 is a filter that filters the chemical solution 7 discharged from the liquid recovery tank 19 and supplies it again into the container 16. 29a~
29d is a circulation channel 22, a water supply channel 23, and a drainage channel 2
This is a solenoid valve that is disposed at a predetermined location of 4 and switches the opening and closing of each flow path.

半導体装置製造のエツチング工程において、前
工程から搬送されてきたキヤリア2を所定のポジ
シヨンに配置し、上記キヤリア2内のウエーハ
1,1…を、予め定ポジシヨンに配置された容器
16内に適宜の手段で移し替えて整列収納する。
この容器16をウエーハ搬送機構(図示せず)に
より移送し、液回収槽19の給液口20に容器1
6の下端開口部16bを嵌挿させることにより上
記容器16を液回収槽19に連結する。そして電
磁弁29a,29bを閉状態、電磁弁29c,2
9dを開状態に設定し、この状態でポンプ27の
駆動力により貯液タンク25内の薬液7を、フイ
ルタ28で濾過しながら液回収槽19の給液口2
0から容器16の下端開口部16bを介して該容
器16内に供給する。この容器16内に流入した
薬液7は、容器16の上端開口部16aからオー
バーフローし、このオーバーフローした薬液7は
液回収槽19の排液口21から貯液タンク25に
回収される。このように循環する薬液7により容
器16内の各ウエーハ1,1…をエツチングす
る。
In the etching process of semiconductor device manufacturing, the carrier 2 transported from the previous process is placed in a predetermined position, and the wafers 1, 1, . . . Transfer and store them in a row.
This container 16 is transferred by a wafer transport mechanism (not shown), and the container 16 is transferred to the liquid supply port 20 of the liquid recovery tank 19.
The container 16 is connected to the liquid recovery tank 19 by fitting the lower end opening 16b of the container 6. Then, the solenoid valves 29a and 29b are closed, and the solenoid valves 29c and 2 are closed.
9d is set to the open state, and in this state, the driving force of the pump 27 filters the chemical liquid 7 in the liquid storage tank 25 with the filter 28, and the liquid supply port 2 of the liquid recovery tank 19 is opened.
0 into the container 16 through the lower end opening 16b of the container 16. The chemical solution 7 that has flowed into the container 16 overflows from the upper end opening 16a of the container 16, and the overflowing chemical solution 7 is collected into the liquid storage tank 25 through the drain port 21 of the liquid recovery tank 19. Each wafer 1, 1, . . . in the container 16 is etched by the chemical solution 7 circulating in this manner.

次に、上記エツチング処理が完了すると、エツ
チング済みのウエーハ1,1…を純水等で洗浄処
理する。このウエーハ洗浄処理は、前記液回収槽
19から容器16を取出し、洗浄用の液回収槽に
移送して行う手段もあるが、この場合上記容器1
6内のウエーハ1,1…の処理面にゴミ等の異物
が付着して汚染される虞があつて上述した手段は
好適ではない。
Next, when the etching process is completed, the etched wafers 1, 1, . . . are washed with pure water or the like. This wafer cleaning process can be carried out by taking out the container 16 from the liquid recovery tank 19 and transferring it to a cleaning liquid recovery tank, but in this case, the container 16 is
The above-mentioned method is not suitable because there is a risk that foreign matter such as dust may adhere to the processing surface of the wafers 1, 1, . . .

そこで、前記容器16を液回収槽19に連結し
た状態で、容器16内の薬液7を純水で徐々に希
釈しながら最終的に上記容器16内を純水に置換
することによりエツチング済みのウエーハ1,1
…を外部雰囲気に晒すことなく洗浄処理へ移行さ
せる。即ち、第1図に示すように電磁弁29a,
29bを開状態、電磁弁29c,29dを閉状態
に設定し、この状態で給水路23から液回収槽1
9の給液口20及び容器16の下端開口部16b
を介して純水を容器16内に供給する。これによ
り容器16内の薬液7が徐々に希釈されながら純
水と共に容器16の上端開口部16aからオーバ
ーフローし、液回収槽19の排液口21から排水
路24へ排出される。その後上記容器16内の薬
液7は最終的に純水と置換され、この純水で容器
16内のウエーハ1,1…が洗浄される。このよ
うに薬液を徐々に希釈しながら純水と置換してウ
エーハ洗浄処理へ移行する手段は、従来装置で
は、第4図に示すように処理液槽6内の薬液量が
多いため、多量の純水と置換しなければならず、
またその置換作業に長時間を要するために好まし
い手段ではなかつた。ところが、本考案装置で
は、容器16内の薬液量が比較的少ないため上記
手段は好適である。
Therefore, with the container 16 connected to the liquid recovery tank 19, the chemical solution 7 in the container 16 is gradually diluted with pure water and finally the inside of the container 16 is replaced with pure water, thereby removing the etched wafer. 1,1
... to the cleaning process without exposing it to the external atmosphere. That is, as shown in FIG.
29b is open, and the solenoid valves 29c and 29d are closed, and in this state, the liquid collection tank 1 is
9 and the lower end opening 16b of the container 16
Pure water is supplied into the container 16 through. As a result, the chemical solution 7 in the container 16 is gradually diluted and overflows from the upper end opening 16a of the container 16 together with pure water, and is discharged from the drain port 21 of the liquid recovery tank 19 to the drainage channel 24. Thereafter, the chemical solution 7 in the container 16 is finally replaced with pure water, and the wafers 1, 1, . . . in the container 16 are cleaned with this pure water. In the conventional apparatus, the method of gradually diluting the chemical solution and replacing it with pure water to move on to the wafer cleaning process requires a large amount of chemical solution in the processing liquid tank 6, as shown in FIG. Must be replaced with pure water,
In addition, it was not a preferable method because the replacement work required a long time. However, in the device of the present invention, the amount of chemical liquid in the container 16 is relatively small, so the above-mentioned method is suitable.

尚、本考案は、上述したエツチング処理以外の
薬液処理について適用可能であるのは勿論であ
る。
It goes without saying that the present invention is applicable to chemical treatments other than the above-mentioned etching process.

考案の効果 本考案によれば、ウエーハが整列保持された容
器を液回収槽に連結し、薬液を容器からオーバー
フローさせながら循環させて容器内のウエーハを
液処理するようにしたから、供給された薬液はす
べて容器内を通りウエーハを効率良く薬液処理で
きるのみならず、液処理に必要な薬液量が少なく
て済むため、薬液を循環させる時間の短縮化が図
れ、且つ、薬液中に浮遊するゴミ等の異物を速や
かに除去することができる。その結果、効率の良
い循環フイルタリングが実現容易となつて作業効
率が大幅に向上すると共に、良品質のウエーハを
提供できる。
Effects of the invention According to the invention, the container in which the wafers are held in alignment is connected to a liquid recovery tank, and the chemical liquid is circulated while overflowing from the container to process the wafers in the container. All of the chemical solution passes through the container, and not only can the wafers be efficiently treated with the chemical solution, but also the amount of chemical solution required for solution treatment is small, which shortens the time for circulating the chemical solution, and reduces the amount of debris floating in the chemical solution. It is possible to quickly remove foreign substances such as As a result, efficient circulation filtering can be easily achieved, work efficiency is greatly improved, and wafers of good quality can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案に係る半導体製造装置の一実施
例を示す概略構成断面図、第2図は第1図装置の
容器を示す正断面図、第3図は第2図の部分断面
を含む側面図である。第4図は半導体製造装置の
従来例を示す概略構成断面図、第5図は第4図装
置のキヤリアを示す正断面図、第6図は第5図の
部分断面を含む側面図である。 1……半導体ウエーハ(ウエーハ)、7……薬
液、15……半導体製造装置、16……容器、1
6a,16b……上下端部、19……液回収槽、
20……給液口。
FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor manufacturing apparatus according to the present invention, FIG. 2 is a front cross-sectional view showing a container of the apparatus shown in FIG. 1, and FIG. 3 includes a partial cross-section of FIG. 2. FIG. 4 is a schematic cross-sectional view showing a conventional example of a semiconductor manufacturing apparatus, FIG. 5 is a front cross-sectional view showing a carrier of the apparatus shown in FIG. 4, and FIG. 6 is a side view including a partial cross-section of FIG. 5. 1... Semiconductor wafer (wafer), 7... Chemical solution, 15... Semiconductor manufacturing equipment, 16... Container, 1
6a, 16b...upper and lower ends, 19...liquid recovery tank,
20...Liquid supply port.

Claims (1)

【実用新案登録請求の範囲】 上下端部が開口した漏斗形状を有し、且つ、内
部に複数の半導体ウエーハを定ピツチで整列保持
した保水性の容器と、 上記容器の下端開口部が給液口に連結され、且
つ、該給液口から容器の下端開口部を介して容器
内に供給されて半導体ウエーハを液処理する薬液
を、容器の上端開口部からオーバーフローさせて
回収する液回収槽とを含むことを特徴とする半導
体製造装置。
[Scope of Claim for Utility Model Registration] A water-retentive container that has a funnel shape with open upper and lower ends and holds a plurality of semiconductor wafers arranged at regular pitches inside, and a lower end opening of the container that supplies liquid. a liquid recovery tank that is connected to the opening of the container and that collects a chemical solution that is supplied from the liquid supply opening into the container through the lower end opening of the container and treats semiconductor wafers by overflowing from the upper end opening of the container; A semiconductor manufacturing device characterized by comprising:
JP11629986U 1986-07-29 1986-07-29 Expired JPH0128677Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11629986U JPH0128677Y2 (en) 1986-07-29 1986-07-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11629986U JPH0128677Y2 (en) 1986-07-29 1986-07-29

Publications (2)

Publication Number Publication Date
JPS6322732U JPS6322732U (en) 1988-02-15
JPH0128677Y2 true JPH0128677Y2 (en) 1989-08-31

Family

ID=31000758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11629986U Expired JPH0128677Y2 (en) 1986-07-29 1986-07-29

Country Status (1)

Country Link
JP (1) JPH0128677Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5911682B2 (en) * 2011-08-30 2016-04-27 株式会社Screenホールディングス Tank carrier and substrate processing apparatus

Also Published As

Publication number Publication date
JPS6322732U (en) 1988-02-15

Similar Documents

Publication Publication Date Title
KR102003128B1 (en) Apparatus for substrate wet processing
DE69826538T2 (en) Method and device for cleaning an article
DE69736378T2 (en) Apparatus and method for cleaning objects to be processed
KR102382902B1 (en) Substrate processing apparatus, cleaning method of substrate processing apparatus
JPH0128677Y2 (en)
JP3138901B2 (en) Substrate immersion processing equipment
JP3336223B2 (en) Cleaning system and cleaning method
JP3623284B2 (en) Cleaning apparatus and control method thereof
JP3200291B2 (en) Cleaning equipment
JP3171821B2 (en) Cleaning device and cleaning method
JP2970894B2 (en) Cleaning equipment
KR102535783B1 (en) Apparatus for Treating Mask and the Method Thereof
JPS62156659A (en) Method and apparatus for cleaning
JPH04290432A (en) Semiconductor manufacturing device
JP3099907B2 (en) Semiconductor processing equipment
JP3035451B2 (en) Substrate surface treatment equipment
JPH05217988A (en) Washing device
JPH04130724A (en) Cleaning apparatus
JPH10163158A (en) Cleaning apparatus for sheetlike body
JPS63128186A (en) Wet etching device
JPH08191056A (en) Method of treating substrate, device and substrate carrier
JPS62195130A (en) Wet type semiconductor manufacturing equipment
JP3682157B2 (en) Substrate processing equipment
JP2022151639A (en) Substrate processing device, substrate processing method and computer readable recording medium
JPH0234823Y2 (en)