JPH01278028A - Cleaning process and device for semiconductor substrate - Google Patents
Cleaning process and device for semiconductor substrateInfo
- Publication number
- JPH01278028A JPH01278028A JP10814188A JP10814188A JPH01278028A JP H01278028 A JPH01278028 A JP H01278028A JP 10814188 A JP10814188 A JP 10814188A JP 10814188 A JP10814188 A JP 10814188A JP H01278028 A JPH01278028 A JP H01278028A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- gas
- cleaning
- oxide film
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000004140 cleaning Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 abstract description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052753 mercury Inorganic materials 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 36
- 239000010408 film Substances 0.000 description 31
- 230000000694 effects Effects 0.000 description 7
- 238000006552 photochemical reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cleaning In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、熱反応及び光化学反応を用いて半導体基板
をクリーニングする方法及びその装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for cleaning a semiconductor substrate using a thermal reaction and a photochemical reaction.
第７図は従来のレジスト除去装置の断面図である。図に
おいて、１はプラズマ保持用反応槽であり、ガス注入口
１ａ及びガス排気口１ｂが設けられている。２は上部電
極、３は下部電極である。FIG. 7 is a sectional view of a conventional resist removing apparatus. In the figure, 1 is a plasma holding reaction tank, which is provided with a gas injection port 1a and a gas exhaust port 1b. 2 is an upper electrode, and 3 is a lower electrode.
上部電極２及び下部電極３は図示していないが、同軸ケ
ーブルを介し高周波（以下ｒＲＦＪと略す。Although the upper electrode 2 and the lower electrode 3 are not shown, they transmit radio frequency (hereinafter abbreviated as rRFJ) via a coaxial cable.
）電源に接続されている。４はレジストが除去される半
導体基板であり、下部電極３上に乗せられている。) connected to power. 4 is a semiconductor substrate from which the resist is removed, and is placed on the lower electrode 3.
次に、動作について説明する。プラズマ保持用反応槽１
内に、ガス注入口１ａを通じ０２ガスの注入を行なう。Next, the operation will be explained. Plasma holding reaction tank 1
02 gas is injected into the tank through the gas injection port 1a.
そして、ガス排気口１ｂより０２ガスの排気を行ない、
プラズマ保持用反応槽１内のガス圧を所定値にする。そ
の後、ＲＦ電源から同軸ケーブルを通じて上部電極２及
び下部電極３に数十〜数百ワットの高周波電力を印加す
る。この際、高周波電力が最も効率よく印加できるよう
に、同軸ケーブル途中にインピーダンス整合機能が付加
されている。この高周波電力の印加により、プラズマ保
持用反応槽１内にガスプラズマが発生し、このプラズマ
により半導体基板４のレジストが除去される。レジスト
除去後の半導体基板４の表面には、用いられたｏ２ガス
によるシリコン酸化膜ができ、また酸化股上には０２ガ
ス中に含まれる不純物等の付着により汚染層が形成され
る。Then, exhaust the 02 gas from the gas exhaust port 1b,
The gas pressure in the plasma holding reaction tank 1 is set to a predetermined value. Thereafter, several tens to hundreds of watts of high frequency power is applied from an RF power source to the upper electrode 2 and the lower electrode 3 through the coaxial cable. At this time, an impedance matching function is added to the middle of the coaxial cable so that high frequency power can be applied most efficiently. By applying this high frequency power, gas plasma is generated in the plasma holding reaction tank 1, and the resist on the semiconductor substrate 4 is removed by this plasma. A silicon oxide film is formed on the surface of the semiconductor substrate 4 after the resist is removed by the O2 gas used, and a contamination layer is formed on the oxidation layer due to adhesion of impurities contained in the O2 gas.
以下汚染層と言えば酸化膜及び汚染層の両方を含むもの
とする。その後、この汚染層を除去するため、半導体基
板４をプラズマ保持用反応槽内１外に取出し、半導体基
板４に弗酸、硝酸等による溶液洗浄及び水洗、乾燥の処
理を加える。Hereinafter, the term "contaminated layer" includes both an oxide film and a contaminated layer. Thereafter, in order to remove this contamination layer, the semiconductor substrate 4 is taken out of the plasma holding reaction tank 1, and the semiconductor substrate 4 is subjected to solution cleaning with hydrofluoric acid, nitric acid, etc., water rinsing, and drying.
従来のレジスト処理装置は以上の様に構成されているの
で、レジスト除去後の半導体基板４の表面に形成された
汚染層を除去するためには、新たに溶液洗浄を行ない、
その後半導体基板４を乾燥させるのに乾燥工程が必要で
あるという問題点があった。従って、乾燥工程において
半導体基板４を外気に触れさせると、再び、自然酸化膜
ができてしまうという問題点があった。Since the conventional resist processing apparatus is configured as described above, in order to remove the contamination layer formed on the surface of the semiconductor substrate 4 after removing the resist, a new solution cleaning is performed.
There is a problem in that a drying process is required to dry the semiconductor substrate 4 after that. Therefore, when the semiconductor substrate 4 is exposed to the outside air in the drying process, there is a problem in that a natural oxide film is formed again.
この発明は上記のような問題点を解決するためになされ
たもので、半導体基板を気相によりクリーニングするこ
とにより液相クリーニングをせず、その結果乾燥工程が
不要であり、従って、外気に触れさせることがない半導
体基板のクリーニング方法及び装置を提供することを目
的とする。This invention was made to solve the above-mentioned problems, and the semiconductor substrate is cleaned in the gas phase without liquid phase cleaning.As a result, a drying process is not necessary, and therefore, the semiconductor substrate is not exposed to the outside air. An object of the present invention is to provide a method and apparatus for cleaning a semiconductor substrate that does not cause any damage to the semiconductor substrate.
（課題を解決するための手段）
この発明に係る半導体基板のクリーニング方法は、半導
体基板に熱を加えつつ、紫外線を照射しながら半導体基
板をクリーニング用ガスに被曝させることを特徴として
いる。(Means for Solving the Problems) A method for cleaning a semiconductor substrate according to the present invention is characterized in that the semiconductor substrate is exposed to a cleaning gas while applying heat to the semiconductor substrate and irradiating ultraviolet rays.
この発明に係る半導体基板のクリーニング装置は、半導
体基板を収容する反応槽と、反応槽内にクリーニング用
ガスを注入するガス注入手段と、半導体基板を加熱する
加熱手段とを億えた構成している。A semiconductor substrate cleaning device according to the present invention includes a reaction tank that accommodates a semiconductor substrate, a gas injection device that injects a cleaning gas into the reaction tank, and a heating device that heats the semiconductor substrate. .
この発明では半導体基板をクリーニング用ガスに被曝さ
せること、半導体基板に紫外線を照射させること、半導
体基板を加熱することの３つの条件により、液相により
、半導体基板をクリーニングすることができる。In the present invention, the semiconductor substrate can be cleaned using a liquid phase under three conditions: exposing the semiconductor substrate to a cleaning gas, irradiating the semiconductor substrate with ultraviolet rays, and heating the semiconductor substrate.
第１図はこの発明の一実施例を示す構成図である。図に
おいて、第７図に示す従来例との相違点は、同一のプラ
ズマ保持用反応槽内１にレジスト除去室５とは別に半導
体基板４の自然酸化膜を除去するだめのクリーニング室
６を設けたことである。レジスト除去室５とクリーニン
グ室６とは可動遮断板７により仕切られている。可動遮
断板７は半導体基板４をレジスト除去ｖ５からクリーニ
ング室６へ移動させる場合に開く。FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, the difference from the conventional example shown in FIG. 7 is that a cleaning chamber 6 for removing the natural oxide film of the semiconductor substrate 4 is provided in the same plasma holding reaction tank 1 in addition to the resist removal chamber 5. That's what happened. The resist removal chamber 5 and the cleaning chamber 6 are separated by a movable shielding plate 7. The movable blocking plate 7 opens when the semiconductor substrate 4 is moved from the resist removal v5 to the cleaning chamber 6.
８は紫外線照射用低圧水銀ランプであり、低圧水銀ラン
プ８から発せられた紫外線は、入射窓９を介し、加熱機
構を有する支持台１０上に置かれた半導体基板４に照射
される。１１はガスを注入するためのガス注入口である
。このクリーニング装置では、クリーニング室６におい
て、ＨＣｊ！ガスと低圧水銀ランプ８からの紫外線と支
持台１０の加熱機構による加熱の３つの条件により、レ
ジスト除去後の半導体基板４上のクリーニングを行なう
。Reference numeral 8 denotes a low-pressure mercury lamp for irradiating ultraviolet rays, and the ultraviolet rays emitted from the low-pressure mercury lamp 8 are irradiated through an entrance window 9 to a semiconductor substrate 4 placed on a support base 10 having a heating mechanism. 11 is a gas injection port for injecting gas. In this cleaning device, in the cleaning chamber 6, HCj! The semiconductor substrate 4 after resist removal is cleaned under three conditions: gas, ultraviolet rays from the low-pressure mercury lamp 8, and heating by the heating mechanism of the support stand 10.
以上のような構成により半導体基板４のクリーニングの
好ましい実施例は、支持台１０において半導体基板４を
５００℃〜５５０℃程度に加熱し、それと同時に、半導
体基板４に低圧水銀ランプ８により紫外線（主として１
８４９人と２５３７人の波長を有する）照射しながら、
半導体基板４をＨＣ１ガスに数分間、被曝させる（以下
ｒＨｃｊ！処理」と略す。）。In a preferred embodiment of cleaning the semiconductor substrate 4 with the above configuration, the semiconductor substrate 4 is heated to about 500°C to 550°C on the support stand 10, and at the same time, the semiconductor substrate 4 is exposed to ultraviolet rays (mainly 1
While irradiating (having wavelengths of 849 and 2537 people),
The semiconductor substrate 4 is exposed to HC1 gas for several minutes (hereinafter abbreviated as rHcj! treatment).
次に上記３つの条件により、自然酸化膜のクリーニング
が効果的に行なわれる理由を以下に説明する。Next, the reason why the natural oxide film can be effectively cleaned under the above three conditions will be explained below.
一般に、半導体基板４は、シリコンにより構成されてお
り、シリコンは極めて酸化されやすい物質である。その
ため、処理装置内部で自然酸化膜が除去されたとしても
、それを確認するため処理装置外に取り出した瞬間に再
び表面が自然酸化膜で覆われてしまうので、処理装置外
に半導体装置４をそのまま取り出して、自然酸化膜が除
去されたか否かは判定できない。Generally, the semiconductor substrate 4 is made of silicon, and silicon is a substance that is extremely easily oxidized. Therefore, even if the natural oxide film is removed inside the processing equipment, the moment it is taken out of the processing equipment to confirm it, the surface will be covered with the natural oxide film again. It is impossible to determine whether the natural oxide film has been removed by taking it out as it is.
そこで、以下の方法により、自然酸化膜除去の有無を判
断する。Therefore, the following method is used to determine whether or not the native oxide film should be removed.
すなわち第２図に示す様な枚葉式の処理装置内でシリコ
ン窒化膜等の酸素を含まない薄膜をＣＶＤＩ積させ、堆
積後、オージェ電子分光法等で半導体基板４の膜厚方向
の元素プロファイルを観測する。これにより、基板−堆
積膜間の界面近傍での酸素の信号検出の有無で自然酸化
膜の有無を判定する。That is, a thin film that does not contain oxygen, such as a silicon nitride film, is deposited by CVDI in a single-wafer processing apparatus as shown in FIG. Observe. Thereby, the presence or absence of a native oxide film is determined based on the presence or absence of an oxygen signal detected near the interface between the substrate and the deposited film.
第３図は、上記観測による元素プロファイルを示すグラ
フである。ＨＣｊ処理を施した場合（第３図（Ａ））と
施さない場合（同（Ｂ））比較してみると、ＨＣＩ処理
を施すことで、基板−堆積膜界面近傍の酸素のピークは
消失しており、自然酸化膜の除去が行なわれていること
がわかる。FIG. 3 is a graph showing the elemental profile obtained from the above observation. Comparing the case with HCj treatment (Figure 3 (A)) and the case without treatment (Figure 3 (B)), it is found that by applying HCI treatment, the oxygen peak near the substrate-deposited film interface disappears. It can be seen that the natural oxide film has been removed.
上記判定後、第２図に示す枚葉式の処理装置において、
半導体基板４の表面に低圧銀ランプ８より紫外線を照射
しつつ、支持台１０上の半導体基板４を加熱し、光電子
放出を行なわせ、放出される電子の恐（光電流）の変化
を測定する。この場合、ＨＣ１処理をした場合（第４図
（Ａ））としない場合（第４図（Ｂ））とでは光電流量
は、第４図に示すように著しい相違がある。これより、
自然酸化膜が除去されると光電流が著しく減少すること
がわかる。また、半導体基板４の測定温度には光電流量
はそれほど影響されないことがわかる。After the above determination, in the single wafer processing apparatus shown in FIG.
While irradiating the surface of the semiconductor substrate 4 with ultraviolet rays from a low-pressure silver lamp 8, the semiconductor substrate 4 on the support stand 10 is heated to cause photoelectron emission, and changes in the intensity of emitted electrons (photocurrent) are measured. . In this case, as shown in FIG. 4, there is a significant difference in the amount of photocurrent between when HC1 treatment is performed (FIG. 4(A)) and when it is not performed (FIG. 4(B)). Than this,
It can be seen that the photocurrent decreases significantly when the native oxide film is removed. Furthermore, it can be seen that the amount of photocurrent is not significantly affected by the measured temperature of the semiconductor substrate 4.
次に、■光電流量が自然酸化膜の有無に著しく影響され
ること、■光電流量は半導体基板４の温度に影響されな
いこと、この２点をふまえて、本発明による自然酸化膜
の除去が、熱反応（半導体基板４を加熱すること）と光
化学反応（半導体基板４に紫外線を照射すること）の相
乗作用によるものであることを以下に示す。Next, based on the following two points: (1) the amount of photocurrent is significantly affected by the presence or absence of a natural oxide film, and (2) the amount of photocurrent is not affected by the temperature of the semiconductor substrate 4, the removal of the natural oxide film according to the present invention is It will be shown below that this is due to the synergistic effect of a thermal reaction (heating the semiconductor substrate 4) and a photochemical reaction (irradiating the semiconductor substrate 4 with ultraviolet rays).
第５図は第２図に示す枚葉式の処理装置を用い、異なっ
た温度条件下で、半導体基板４に対しＨＣ１処理を行な
いながら光電２１１ｍの変化を測定した測定結果を示す
図である。この場合、充電流測定手順としては、半導体
基板４を支持台１０により所定温度に保らながらＨＣＩ
雰囲気におき、紫外線照射用の入射窓９を開放すること
により低圧水銀ランプ８より紫外線を照射し、以降の充
電流変化を経時的に追跡している。FIG. 5 is a diagram showing measurement results obtained by measuring changes in the photoelectron 211m while performing HC1 processing on the semiconductor substrate 4 under different temperature conditions using the single-wafer processing apparatus shown in FIG. In this case, as a charge current measurement procedure, the semiconductor substrate 4 is maintained at a predetermined temperature by the support stand 10, and the HCI
In the atmosphere, ultraviolet rays are irradiated from a low-pressure mercury lamp 8 by opening the entrance window 9 for ultraviolet irradiation, and subsequent changes in charge flow are tracked over time.
第５図かられかることは、■各温度とも、紫外線照射開
始と共に光電流が減少する、■光電流の減少速度は温度
上昇と共に急速に増大する、■充電流減少後の光電流は
半導体基板４の温度に依存しない一定値に落ち着く、と
いう事である。この場合、前述したように、半導体基板
４の測定温度には光電流量は影響されないため、自然酸
化膜の除去速度は熱によりアシストされていることがわ
かる。実際、データブックによれば、常温のＨＣｌガス
は、約１５０ｎｍ以下の波長の紫外線しか吸収できず、
第５図に示す実験結果は１８４９人と２５３７人の波長
を有する紫外線によるものであるので、紫外線照射によ
る光化学反応だけでは励起できなくても、熱のアシスト
により自然酸化膜の除去が行われる場合のあることを示
している。What can be learned from Figure 5 is: ∎ The photocurrent decreases with the start of ultraviolet irradiation at each temperature; ∎ The rate of decrease in photocurrent increases rapidly as the temperature rises; ∎ The photocurrent after the charging current decreases in the semiconductor substrate. This means that it settles down to a constant value that is independent of the temperature of 4. In this case, as described above, since the amount of photocurrent is not affected by the measured temperature of the semiconductor substrate 4, it can be seen that the removal rate of the native oxide film is assisted by heat. In fact, according to the data book, HCl gas at room temperature can only absorb ultraviolet light with a wavelength of about 150 nm or less.
The experimental results shown in Figure 5 are based on ultraviolet rays with wavelengths of 1,849 and 2,537, so even if the photochemical reaction by ultraviolet irradiation cannot be excited, the natural oxide film can be removed by thermal assistance. It shows that there is.
なお、第５図では、すばやく自然酸化膜の除去を行なう
には半導体基板４の温度が５００℃以上が望ましいこと
を示している。従来、半導体基板４のエツチングをＨＣ
ｌ８囲気中で加熱することのみにより行っていた場合に
は、１０００℃以上の条件により行っていたのであるが
、この発明のＨＣＪ処理によるとその温度が約１７２に
なり、従来のエツチングを行う場合により低い温度条件
で半導体基板４上の自然酸化膜を除去できる。Note that FIG. 5 shows that the temperature of the semiconductor substrate 4 is desirably 500° C. or higher in order to quickly remove the native oxide film. Conventionally, etching of the semiconductor substrate 4 was performed using HC.
If etching was performed only by heating in an ambient atmosphere, the temperature would be 1000°C or higher, but with the HCJ process of this invention, the temperature is about 172°C, which is higher than when conventional etching is performed. The natural oxide film on the semiconductor substrate 4 can be removed under lower temperature conditions.
第６図は、Ａ「雰囲気中で半導体基板４の温度を５００
℃にして、光電子コレクタ電極（基板と対向したメツシ
ュ状電極）に印加する電圧を変化させて光電流を測定し
た測定結果を示すグラフである。半導体基板４の条件と
して、以下の４種類を選んだ。条件（ａ）〜（ｂ）の結
果を曲線ａ−ｄに示す。FIG. 6 shows the temperature of the semiconductor substrate 4 in the atmosphere of A
5 is a graph showing the measurement results of photocurrent measured by changing the voltage applied to the photoelectron collector electrode (mesh-like electrode facing the substrate) at .degree. The following four conditions were selected for the semiconductor substrate 4. The results of conditions (a) to (b) are shown in curves ad.
（ａ） 紫外線を照射したがＨＣＪ被曝を全く行なわ
なかった半導体基板。(a) A semiconductor substrate that was irradiated with ultraviolet rays but was not exposed to HCJ at all.
（ｂ） 紫外線を照射せず、５００℃において１５分
量目Ｃ１被曝した基板。(b) A substrate exposed to the 15th dose of C1 at 500° C. without being irradiated with ultraviolet rays.
（Ｃ） 紫外線を照射しながら、５００℃において１
５分量目Ｃ１被曝した基板。なお被曝の時、同時に光電
子コレクタ電極にバイアス電圧として＋２５０Ｖの電圧
を印加し続けた。(C) 1 at 500℃ while irradiating ultraviolet rays.
5th dose C1 exposed substrate. At the time of exposure, a voltage of +250 V was simultaneously applied to the photoelectron collector electrode as a bias voltage.
（ｄ） 紫外線を照射しながら５００℃において１５
分間ＨＣＩ被曝した基板。なおこの場合、光電子コレク
タ電極にはバイアス電圧を印加しなかった。(d) 15 at 500℃ while irradiating ultraviolet rays.
Substrate exposed to HCI for minutes. Note that in this case, no bias voltage was applied to the photoelectron collector electrode.
第６図により充電流特性は、曲線ａとｂ及び曲線Ｃとｄ
に分類できる。このことにより、半導体基板４を５００
℃程度に加熱しても紫外線照射のない場合は、ＨＣｊ被
曝しても自然酸化膜は除去されないこと、ＨＣ１処理の
効果が光電流測定中に印加した外部電界の効果によるも
のではないことがわかる。また、紫外線とＨＣｌガスの
両方によりクリーニングを行えば、光電流量が少なくな
ることがわかる。従って、自然酸化膜除去には紫外線と
ＨＣｌガスが必須であることがわかる。According to FIG. 6, the charging current characteristics are curves a and b and curves C and d.
It can be classified into This allows the semiconductor substrate 4 to be
If there is no ultraviolet irradiation even after heating to about ℃, it can be seen that the natural oxide film is not removed even after HCj exposure, and that the effect of HC1 treatment is not due to the effect of the external electric field applied during photocurrent measurement. . Furthermore, it can be seen that if cleaning is performed using both ultraviolet rays and HCl gas, the amount of photocurrent decreases. Therefore, it can be seen that ultraviolet rays and HCl gas are essential for removing the natural oxide film.
なお、第６図において、光電子コレクタ電極への印加電
圧の増加と共に光電流が増加するのは、測定雰囲気ガス
であるＡｒ中の電子増倍作用によるもので、上述の議論
にとって大きな意味はない。Note that in FIG. 6, the increase in photocurrent as the voltage applied to the photoelectron collector electrode increases is due to the electron multiplication effect in Ar, which is the measurement atmosphere gas, and has no significant meaning for the above discussion.
以上の検討の結果、ＨＣｌガスを注入しながら半導体基
板４を加熱すること（熱反応）と、ＨＣｌガス等を注入
しながら紫外線照射を行なうこと（光化学反応）との協
調により、自然酸化膜の効果的な除去が初めて可能にな
ると結論づけることができる。As a result of the above studies, it was found that by coordinating heating the semiconductor substrate 4 while injecting HCl gas (thermal reaction) and irradiating ultraviolet rays while injecting HCl gas etc. (photochemical reaction), the natural oxide film can be It can be concluded that effective removal is possible for the first time.
このことは、熱反応にとっては、光化学反応の助けによ
り反応温度の低下、光化学反応にとっては、熱反応の助
けにより励起波長又は励起可能ガスの選択自由度の増大
ということを示しており、実際に本発明を実施した場合
の意義は大きいといえる。This indicates that for thermal reactions, the reaction temperature is lowered with the help of photochemical reactions, and for photochemical reactions, the degree of freedom in selecting excitation wavelengths or excitable gases is increased with the help of thermal reactions. It can be said that implementing the present invention is of great significance.
以上のことにより半導体基板４の自然酸化膜を除去する
のには前述した３つの条件が必要であることがわかる。From the above, it can be seen that the three conditions described above are necessary to remove the native oxide film of the semiconductor substrate 4.
次に第１図に示した装置により半導体基板４がレジスト
除去され、その後クリーニングされる動作について説明
する。レジスト除去室５において、半導体基板４のレジ
ストが除去される動作は第７図に示した従来装置の動作
と同様である。この場合、可動自動遮断板７は閉じられ
ている。その後、排気し、可動遮断板７を開き、レジス
トが除去された半導体基板４を図示していない搬送手段
により、クリーニング室６中の支持台１０上に搬送する
。そして、排気口１ｂより反応槽１中のガスをさらに排
気させ、ある程度の真空度に達したところで、可動遮断
板７を閉じ、ガス注入口１１よりＨＣｌガスを注入しな
がら、入射窓９を開き低圧水銀ランプにより紫外線照射
を行ない、更に支持台１０により半導体基板４を加熱す
る。このＨＣ１処理により、前述したように、半導体基
板４上の自然酸化膜は除去される。Next, the operation of removing the resist from the semiconductor substrate 4 and then cleaning it using the apparatus shown in FIG. 1 will be described. In the resist removal chamber 5, the operation of removing the resist on the semiconductor substrate 4 is similar to the operation of the conventional apparatus shown in FIG. In this case, the movable automatic shutoff plate 7 is closed. Thereafter, the air is evacuated, the movable shielding plate 7 is opened, and the semiconductor substrate 4 from which the resist has been removed is transported onto the support stand 10 in the cleaning chamber 6 by a transport means (not shown). Then, the gas in the reaction tank 1 is further exhausted from the exhaust port 1b, and when a certain degree of vacuum is reached, the movable shielding plate 7 is closed, and while HCl gas is injected from the gas injection port 11, the entrance window 9 is opened. Ultraviolet rays are irradiated with a low-pressure mercury lamp, and the semiconductor substrate 4 is further heated with the support 10. By this HC1 treatment, the natural oxide film on the semiconductor substrate 4 is removed, as described above.
なお、上記実施例では、レジスト除去後同一のプラズマ
保持用反応槽１内で半導体基板４がクリーニングされる
場合について説明したが、別の反応槽で半導体基板４の
クリーニングを行ってもよい。この場合、半導体基板４
のクリーニング後、液相クリーニングを行った場合のよ
うに乾燥させる必要がない。In the above embodiment, a case has been described in which the semiconductor substrate 4 is cleaned in the same plasma holding reaction tank 1 after resist removal, but the semiconductor substrate 4 may be cleaned in another reaction tank. In this case, the semiconductor substrate 4
After cleaning, there is no need for drying as is the case with liquid phase cleaning.
また、上記実施例では、紫外線源として低圧水銀ランプ
を用いたが、光量の大きい高圧水銀ランプを用いてもよ
く、紫外線源となるものならば、これらに限定されない
。Further, in the above embodiment, a low-pressure mercury lamp was used as the ultraviolet source, but a high-pressure mercury lamp with a large amount of light may be used, and the present invention is not limited to these as long as it serves as an ultraviolet source.
また、上記実施例ではクリーニングガスとしてＨＣｌガ
スを用い自然酸化膜を除去する例について述べたが、他
のガス例えばＨ２ガス、Ｃ１２ガスを用いてもよく、自
然酸化膜に限らず汚染層などの他の膜の除去にもこの発
明は適用でき、この場合にも同様の効果が得られる。In addition, in the above embodiment, an example was described in which a natural oxide film is removed using HCl gas as a cleaning gas, but other gases such as H2 gas or C12 gas may be used, and it is not limited to a natural oxide film, but a contaminated layer, etc. The present invention can also be applied to the removal of other films, and similar effects can be obtained in this case as well.
以上のようにこの発明に係る半導体基板のクリーニング
方法及び装置によれば、半導体基板をクリーニング用ガ
ス被曝させること、半導体基板に紫外線を照射すること
、半導体基板を加熱することの３つの条件により、半導
体基板をクリーニングするようにしたので液相により半
導体基板をクリーニングした場合のように、その後乾燥
工程を設ける必要がなく、その結果、半導体基板を外気
に触れさせることがないので、再び酸化膜がでないとい
う効果がある。As described above, according to the method and apparatus for cleaning a semiconductor substrate according to the present invention, the following three conditions can be used: exposing the semiconductor substrate to a cleaning gas, irradiating the semiconductor substrate with ultraviolet rays, and heating the semiconductor substrate. Since the semiconductor substrate is cleaned, there is no need for a subsequent drying process, unlike when cleaning the semiconductor substrate with a liquid phase.As a result, the semiconductor substrate is not exposed to the outside air, so the oxide film does not form again. There is an effect that it is not.
第１図はこの発明に係る半導体基板のクリーニング装置
を示す一構成図、第２図はこの発明に係る半導体基板の
クリーニング方法により酸化膜が除去しているか否かを
テストするための装置を示す図、第３図ないし第６図は
そのテスト結果を示す図、第７図は従来のレジスト除去
装置を示す図１０は加熱機構付支持台、１１はガス注入
口である。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a configuration diagram showing a semiconductor substrate cleaning device according to the present invention, and FIG. 2 is a diagram showing a device for testing whether an oxide film is removed by the semiconductor substrate cleaning method according to the present invention. 3 to 6 show the test results, FIG. 7 shows a conventional resist removing apparatus, FIG. 10 shows a support with a heating mechanism, and 11 is a gas injection port. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (2)
、前記半導体基板をクリーニング用ガスに被曝させるこ
とを特徴とする半導体基板のクリーニング方法。(1) A method for cleaning a semiconductor substrate, the method comprising exposing the semiconductor substrate to a cleaning gas while applying heat to the semiconductor substrate and irradiating the semiconductor substrate with ultraviolet rays.
導体基板を収容する反応槽と、 前記反応槽内にクリーニング用ガスを注入するガス注入
手段と、 前記半導体基板を加熱する加熱手段とを備えた半導体基
板のクリーニング装置。(2) A cleaning device for a semiconductor substrate, comprising: a reaction tank for accommodating the semiconductor substrate; a gas injection means for injecting a cleaning gas into the reaction tank; and a heating means for heating the semiconductor substrate. Cleaning equipment for semiconductor substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10814188A JPH01278028A (en) | 1988-04-28 | 1988-04-28 | Cleaning process and device for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10814188A JPH01278028A (en) | 1988-04-28 | 1988-04-28 | Cleaning process and device for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01278028A true JPH01278028A (en) | 1989-11-08 |
Family
ID=14476979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10814188A Pending JPH01278028A (en) | 1988-04-28 | 1988-04-28 | Cleaning process and device for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01278028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012092008A (en) * | 2010-10-25 | 2012-05-17 | Wacker Chemie Ag | Method for producing polycrystalline silicon rod |
-
1988
- 1988-04-28 JP JP10814188A patent/JPH01278028A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012092008A (en) * | 2010-10-25 | 2012-05-17 | Wacker Chemie Ag | Method for producing polycrystalline silicon rod |
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