JPH0573052B2 - - Google Patents
Info
- Publication number
- JPH0573052B2 JPH0573052B2 JP6350285A JP6350285A JPH0573052B2 JP H0573052 B2 JPH0573052 B2 JP H0573052B2 JP 6350285 A JP6350285 A JP 6350285A JP 6350285 A JP6350285 A JP 6350285A JP H0573052 B2 JPH0573052 B2 JP H0573052B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- etching
- lsi
- reaction vessel
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000001182 laser chemical vapour deposition Methods 0.000 claims 1
- 238000012937 correction Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 8
- 125000002524 organometallic group Chemical group 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 iC 4 H 9 ) 3 Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、LSIにおけるアルミ配線等の表面に
形成されているパツシベーシヨン膜および酸化膜
を除去した後、再び大気にさらすことなく、配線
修正箇所に金属薄膜を析出させて配線修正を行な
うように構成したLSI配線修正方法及びその装置
に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention provides a method for removing a passivation film and an oxide film formed on the surface of aluminum wiring in an LSI, and then repairing the wiring without exposing it to the atmosphere again. The present invention relates to an LSI wiring repair method and apparatus configured to repair wiring by depositing a metal thin film.
有機金属ガスをレーザ光の熱ないし、光エネル
ギーで分解し、金属薄膜を析出させる技術は公知
である。例えば、アプライド・フイジクス・レタ
ーズ〔Appl.Phys.Lett.35(2)、15July 1979〕のペ
ージ175−177に記載がある。この方法は、第１図
に示すように、有機金属ガスを反応容器３内に閉
じ込め、スリツト４を通過させたレーザ光をレン
ズ２で試料面に集光させ、レーザ光の熱ないし光
エネルギーにより有機金属ガスを分解し、該試料
表面上に金属薄膜を析出させるものである。な
お、金属薄膜の析出状態はフオトチユーブ５によ
り透過光を電気信号に変換した後、ロツクインア
ンプ６で増巾し、チヤートレコーダ７でモニタす
るように構成されている。
Techniques for depositing metal thin films by decomposing organometallic gases using the heat of laser light or optical energy are well known. For example, it is described in Applied Physics Letters [Appl.Phys.Lett.35(2), 15July 1979], pages 175-177. In this method, as shown in Fig. 1, an organometallic gas is confined in a reaction vessel 3, and a laser beam that has passed through a slit 4 is focused on the sample surface using a lens 2. This method decomposes organometallic gas and deposits a thin metal film on the surface of the sample. The state of deposition of the metal thin film is determined by converting transmitted light into an electrical signal using a photo tube 5, amplifying the signal using a lock-in amplifier 6, and monitoring the signal using a chart recorder 7.
上記方法は、半導体デバイスの配線修正や電極
形成に利用する試みがなされており、その一部が
報告されている（横山ほか、Arレーザの第２高
調波によるAlのレーザCVD：昭和59年秋季、第
45回応用物理学会関係連合講演会、講演予稿集
P104）。 Attempts have been made to utilize the above method for wiring correction and electrode formation in semiconductor devices, and some of these have been reported (Yokoyama et al., Laser CVD of Al using the second harmonic of an Ar laser: Autumn 1982). , No.
Proceedings of the 45th Japan Society of Applied Physics Joint Conference
P104).
しかし、この方法のみでLSI等のアルミ配線修
正を行なうと、該アルミ配線表面に形成されてい
るパツシベーシヨン膜ないし酸化膜の抵抗が非常
に大きいため、良好な配線修正が行なえない欠点
があつた。 However, if this method alone is used to repair aluminum wiring in LSIs, etc., the resistance of the passivation film or oxide film formed on the surface of the aluminum wiring is extremely high, so the wiring cannot be repaired properly.
本発明の目的は、上記従来技術の欠点をなくす
ため、LSI配線表面に形成されているパツシベー
シヨン膜ないし酸化膜を除去した後、再び大気に
触れて酸化することなく、配線修正箇所に導電性
の金属薄膜を析出させ、良好な配線修正を行なう
LSI配線修正方法及びその装置を提供するにあ
る。
An object of the present invention is to remove the passivation film or oxide film formed on the surface of the LSI wiring, and to eliminate the above-mentioned drawbacks of the prior art. Depositing a metal thin film and making good wiring corrections
An object of the present invention is to provide a method and device for modifying LSI wiring.
本発明は、反応容器内でLSIアルミ配線表面の
パツシベーシヨン膜ないし酸化膜をAr、N2、
CF4、SiF4、CCl4、CCl2F2、BCl3等のガスを用
いてプラズマエツチング、イオンビームエツチン
グないしレーザエツチングによりLSIチツプ全面
あるいはアルミ配線修正箇所のみをエツチングし
反応容器外に排気した後、新たに、Al（CH3）3、
Al（C2H5）3、Al（iC4H9）、Cd（CH3）2、Cd
（C2H5）2等の有機金属化合物からなる気体を導入
し、レーザ光をLSIのアルミ配線修正箇所に照射
し、熱ないし光エネルギーで上記気体を分解させ
てAlまたはCd等の金属薄膜を析出させ、配線修
正を行なうものである。
In the present invention, a passivation film or an oxide film on the surface of LSI aluminum wiring is removed using Ar, N 2 ,
The entire surface of the LSI chip or only the modified aluminum wiring was etched by plasma etching, ion beam etching, or laser etching using gases such as CF 4 , SiF 4 , CCl 4 , CCl 2 F 2 , and BCl 3 , and the etching was then evacuated to the outside of the reaction vessel. After that, new Al(CH 3 ) 3 ,
Al( C2H5 ) 3 , Al( iC4H9 ), Cd ( CH3 ) 2 , Cd
A gas consisting of an organometallic compound such as (C 2 H 5 ) 2 is introduced, a laser beam is irradiated to the repaired portion of the LSI's aluminum wiring, and the gas is decomposed by heat or light energy to form a thin metal film of Al or Cd. is deposited to correct wiring.
以下、本発明の一実施例を第２図により説明す
る。配線接続箇所を有するLSIチツプ１８が取付
けられた反応容器１６は、バルブ２２を介してエ
ツチング物質（Ar、N2、CF4、SiF4、CCl4、
CCl2F2、BCl3等の単独ないし混合物）が納めら
れたエツチング物質容器２０とバルブ２１を介し
て修正物質（Al（CH3）3、Al（C2H5）3、Al
（iC4H9）3、Cd（CH3）2、Cd（C2H5）2等の有機金属
化合物）が納められた修正物質容器１９と、バル
ブ２５を介して真空ポンプ２６と、そして、バル
ブ２９を介して不活性ガスボンベ２８と配管によ
り接続されている。反応容器１６内には、LSIチ
ツプをプラズマエツチングするための平行平板型
の電極２３が設置され、反応容器１６の外に設置
された高周波電源（例えば13.56MHz）２４から
数百〜数KWの電力を供給される。
An embodiment of the present invention will be described below with reference to FIG. A reaction vessel 16 to which an LSI chip 18 having a wiring connection point is attached is supplied with an etching substance (Ar, N 2 , CF 4 , SiF 4 , CCl 4 ,
Correction substances (Al(CH 3 ) 3 , Al ( C 2 H 5 ) 3 , Al
(organometallic compounds such as iC 4 H 9 ) 3 , Cd (CH 3 ) 2 , Cd (C 2 H 5 ) 2 ) is stored in a correction substance container 19 , a vacuum pump 26 via a valve 25 , and , are connected to an inert gas cylinder 28 via a valve 29 and piping. Inside the reaction vessel 16, a parallel plate type electrode 23 for plasma etching the LSI chip is installed, and a power of several hundred to several kilowatts is supplied from a high frequency power source (for example, 13.56MHz) 24 installed outside the reaction vessel 16. is supplied.
レーザ発振器１９で発振されたレーザ光は、シ
ヤツタ３０ａを介してダイクロイツクミラー９ａ
で反射され、対物レンズ２で集光されて、反応容
器１６に設けた窓１５を通つてLSIアルミ配線修
正箇所に照射できるようになつており、照射光学
系１４、ハーフミラー１０、レーザ光カツトフイ
ルタ１１、プリズム１２、接眼レンズ１３を介し
て修正箇所を観察しながら行なえるように構成さ
れている。 The laser beam oscillated by the laser oscillator 19 passes through the shutter 30a to the dichroic mirror 9a.
The beam is reflected by the object lens 2, focused by the objective lens 2, and can be irradiated through a window 15 provided in the reaction vessel 16 to the LSI aluminum wiring repair area. 11, a prism 12, and an eyepiece lens 13 to allow the correction to be made while observing the area to be corrected.
この装置で加工を行なう手順を示すと、まず、
LSIチツプ表面のパツシベーシヨン膜ないし酸化
膜除去を行なう。 The procedure for processing with this device is as follows:
The passivation film or oxide film on the surface of the LSI chip is removed.
バルブ２５を開け反応容器１６を真空ポンプ２
６で10-5〜10-4Torrまで真空引きを行ない、そ
の後、バルブ２２を開け、エツチング用ガスを反
応容器１６内に導入し、反応容器１６内の圧力が
0.1Torr程度で一定値を保つようにバルブ２２お
よびバルブ２５を調整する。この時の圧力は、パ
ツシベーシヨン膜ないし酸化膜の厚みによつて
は、イオンの平均自由行程を大きくしてスパツタ
エツチングの効果を高めるために、より低圧に設
定しても良い。前記電極２３に高周波電力を供給
し、一定時間エツチングした後、バルブ２２を閉
じ、真空ポンプ２６で反応容器１６内を10-6〜
10-4Torrの圧力まで真空引きを行ない、反応容
器１６内の残留物を極力、取り除くようにする。
その後、Ｘ−Ｙテーブル１７により前記レーザ光
の照射位置にLSIチツプを移動させ、配線修正箇
所の位置合せを行なう。しかる後に、バルブ２１
およびバルブ２９を開け、前記修正物質と不活性
ガスを適当な混合比になるように流量計（図示せ
ず）を見ながら調整し、全圧力が数十〜数百
Torrになる様、バルブ２５を調整する。この後、
シヤツタ３０ａを開き、配線修正箇所にレーザ光
を照射し、一定時間後シヤツタ３０ａを閉じる。
このレーザ照射により、レーザ照射部近傍の有機
金属ガスは分解され、AlあるいはCdの金属薄膜
が析出して配線修正が行なわれる。必要に応じて
LSIチツプ内の全てのアルミ配線修正箇所を修正
する。次に、バルブ２５を開け、反応容器１６内
を十分排気してからバルブ２５を閉じ、バルブ２
９を開けて不活性ガスをボンベ２８から注入し、
反応容器１６を大気圧とほぼ等しくする。この
時、不活性ガスを注入しながら排気しても良い。
全てのバルブを閉じた後、LSIチツプ１８を取外
して修正を完了する。なお、この実施例において
は、プラズマスパツタに高周波電力を用いている
が、直流の高電圧を用いても良い。さらに修正物
質と不活性ガスを混合して用いているが、修正物
質単独でも良く、また、前記修正物質を反応容器
に閉じ込めた状態で金属薄膜を析出させても良
い。 Open the valve 25 and move the reaction vessel 16 to the vacuum pump 2.
6, the vacuum is drawn to 10 -5 to 10 -4 Torr, and then the valve 22 is opened and etching gas is introduced into the reaction vessel 16, so that the pressure inside the reaction vessel 16 is reduced.
The valves 22 and 25 are adjusted to maintain a constant value of about 0.1 Torr. Depending on the thickness of the passivation film or oxide film, the pressure at this time may be set to a lower pressure in order to increase the mean free path of the ions and enhance the effect of sputter etching. After high-frequency power is supplied to the electrode 23 and etching is performed for a certain period of time, the valve 22 is closed, and the inside of the reaction vessel 16 is heated to 10 -6 to 10 -6 by the vacuum pump 26.
Vacuuming is performed to a pressure of 10 -4 Torr to remove as much residue as possible inside the reaction vessel 16.
Thereafter, the LSI chip is moved to the irradiation position of the laser beam using the X-Y table 17, and the wiring correction location is aligned. After that, valve 21
Then, open the valve 29, adjust the mixing ratio of the correction substance and inert gas while watching the flow meter (not shown), and adjust the mixture ratio until the total pressure is several tens to several hundreds.
Adjust valve 25 so that it becomes Torr. After this,
The shutter 30a is opened, a laser beam is irradiated to the wiring correction location, and the shutter 30a is closed after a certain period of time.
By this laser irradiation, the organometallic gas near the laser irradiation part is decomposed, a metal thin film of Al or Cd is deposited, and wiring is repaired. as needed
Correct all aluminum wiring in the LSI chip. Next, the valve 25 is opened, the inside of the reaction vessel 16 is sufficiently evacuated, the valve 25 is closed, and the valve 25 is closed.
9 and inject inert gas from cylinder 28,
The pressure in the reaction vessel 16 is made approximately equal to atmospheric pressure. At this time, exhaust may be performed while injecting inert gas.
After closing all the valves, remove the LSI chip 18 and complete the modification. In this embodiment, high frequency power is used for the plasma sputtering, but high voltage direct current may also be used. Further, although a mixture of the correction substance and an inert gas is used, the correction substance may be used alone, or the metal thin film may be deposited while the correction substance is confined in a reaction vessel.
次に、LSIアルミ配線表面のパツシベーシヨン
膜ないし酸化膜除去方法として、イオンビームエ
ツチングを行なつた例を第３図に示す。装置構成
のうち、配線修正用の有機金属ガスの供給系、排
気系、レーザ光照射系、修正箇所の位置合せ用の
観察系、及びＸ−Ｙステージ移動方法等は、前記
実施例と特に違いはない。まず、バルブ２５を開
け、真空ポンプ２６により反応容器１６内を圧力
10-7〜10-5Torrまで真空引きを行なう。その後、
バルブ２２を開け、エツチング用のArガスをイ
オン銃２７に供給し、イオン化した後、数KV〜
20KV程度の電圧で加速し、LSIチツプ表面にイ
オンビームを照射し、エツチングを行なう。この
時のイオンビームの直径は、LSIチツプ表面全体
を照射できる程度に拡がつていても、静電レンズ
（図示せず）等で集束させ、配線修正箇所のみに
照射しても良い。一定時間エツチングした後、金
属薄膜を析出させる手順および排気後、LSIチツ
プの取り出し方法等は、前記実施例と同じであ
る。 Next, FIG. 3 shows an example in which ion beam etching was performed as a method for removing the passivation film or oxide film on the surface of the LSI aluminum wiring. Among the device configurations, the supply system of metal organic gas for wiring correction, the exhaust system, the laser beam irradiation system, the observation system for positioning the correction location, the method of moving the X-Y stage, etc. are particularly different from the above embodiments. There isn't. First, the valve 25 is opened, and the inside of the reaction vessel 16 is pressurized by the vacuum pump 26.
Vacuum to 10 -7 to 10 -5 Torr. after that,
After opening the valve 22 and supplying Ar gas for etching to the ion gun 27 and ionizing it,
The ion beam is accelerated at a voltage of about 20KV and etched onto the surface of the LSI chip. The diameter of the ion beam at this time may be wide enough to irradiate the entire surface of the LSI chip, or it may be focused using an electrostatic lens (not shown) or the like to irradiate only the wiring correction area. The procedure for depositing a metal thin film after etching for a certain period of time and the method for taking out the LSI chip after evacuation are the same as in the previous embodiment.
次に、LSIアルミ配線修正の行程中、アルミ配
線表面のパツシベーシヨン膜ないし酸化膜除去を
レーザ光の熱あるいは光エネルギを利用したエツ
チングにより行なつた例を第４図に示す。 Next, FIG. 4 shows an example in which the passivation film or oxide film on the surface of the aluminum wiring was removed by etching using the heat of laser light or optical energy during the process of modifying the LSI aluminum wiring.
この装置は、エツチング用レーザ光発振器１ｂ
及び金属薄膜析出用のレーザ光発振器１ａとそれ
ぞれのレーザ光を反射するダイクロイツクミラー
９ｂ及び９ａと、対物レンズ２で構成されるレー
ザ照射系と、修正箇所の位置合せ用の観察系、エ
ツチングガスの供給系、配線修正用の有機金属ガ
スの供給系、排気系及びＸ−Ｙステージより構成
されている。 This device includes an etching laser beam oscillator 1b.
and a laser irradiation system consisting of a laser beam oscillator 1a for metal thin film deposition, dichroic mirrors 9b and 9a that reflect the respective laser beams, and an objective lens 2, an observation system for positioning the repaired part, and an etching gas. , an organometallic gas supply system for wiring correction, an exhaust system, and an XY stage.
以下、この装置において配線修正を行なう場合
の手順を示す。 The procedure for correcting wiring in this device will be described below.
まず、バルブ２５を開け、エツチング用気体を
反応容器１６内に導入し、圧力が数Torr〜数十
Torrになるようにバルブ２２及びバルブ２５を
調整する。 First, the valve 25 is opened and etching gas is introduced into the reaction vessel 16, and the pressure is increased from several Torr to several tens of Torr.
Adjust valve 22 and valve 25 so that Torr.
観察系を見ながら、配線修正部にエツチング用レ
ーザ光及び金属薄膜析出用のレーザ光が照射する
ように、Ｘ−Ｙステージ１７を調整した後、シヤ
ツタ３０ｂを開け、一定時間エツチングした後、
シヤツタ３０ｂを閉じる。ここで用いるエツチン
グ用レーザ光は、エツチングが熱により進行する
場合はアルミ配線部を形成する物質がよく吸収す
る波長帯のレーザ光を、また、エツチングガスに
光エネルギを与えて、該エツチングガスのイオン
ないしラジカルを生成し、それら活性種によりエ
ツチングが進行する場合は、該エツチングガスが
よく吸収する波長帯のレーザ光を用いると良い。
したがつて、エツチングガスの吸収波長と金属薄
膜の析出に用いる有機金属ガスの吸収波長とが同
一ないし、非常に近い場合は、レーザ発振器は１
台で兼用できる。While watching the observation system, adjust the X-Y stage 17 so that the wiring repair section is irradiated with the etching laser beam and the metal thin film deposition laser beam, open the shutter 30b, and after etching for a certain period of time,
Close the shutter 30b. The etching laser light used here is a laser light in a wavelength band that is well absorbed by the material forming the aluminum wiring when etching proceeds by heat, and a laser light in a wavelength band that is well absorbed by the material forming the aluminum wiring part. When ions or radicals are generated and etching proceeds by these active species, it is preferable to use a laser beam in a wavelength range that is well absorbed by the etching gas.
Therefore, if the absorption wavelength of the etching gas and the absorption wavelength of the organometallic gas used for depositing the metal thin film are the same or very close, the laser oscillator
Can be used as a stand.
エツチング終了後、バルブ２５を開け、真空ポ
ンプ２６により反応容器１６内を圧力10-6〜
10-4Torrになるまで真空引きを行ない、金属薄
膜析出用の有機金属ガスを反応容器１６内に導入
する。 After etching is completed, the valve 25 is opened and the pressure inside the reaction vessel 16 is increased to 10 -6 ~ by the vacuum pump 26.
The vacuum is drawn down to 10 -4 Torr, and an organometallic gas for depositing a metal thin film is introduced into the reaction vessel 16.
レーザ光照射による金属薄膜析出および成膜後
の排気およびLSIチツプの取りはずし等の手順は
前記実施例と同じである。 Procedures such as metal thin film deposition by laser beam irradiation, exhaust after film formation, and removal of the LSI chip are the same as in the previous embodiment.
〔発明の効果〕
本発明によれば、配線修正箇所のエツチング行
程と金属薄膜析出行程を連続して、LSIチツプを
大気中にさらすことなく行なえるため、LSIチツ
プの汚染ないし、配線表面の酸化を防止でき、良
好な配線修正が行なえると共に、上記プロセスに
関わる装置を一体化し、コンパクトにまとめるこ
とが出来る利点がある。[Effects of the Invention] According to the present invention, the etching process for wiring correction locations and the metal thin film deposition process can be performed consecutively without exposing the LSI chip to the atmosphere, thereby preventing contamination of the LSI chip or oxidation of the wiring surface. This method has the advantage that it is possible to prevent problems, to perform good wiring corrections, and to integrate equipment related to the above process and make it compact.
第１図は、従来技術を説明する図、第２図、第
３図、第４図は本発明の実施例を示す構成図であ
る。
符号の説明、１ａ，１ｂ……レーザ発振器、１
６……反応容器、２３……プラズマエツチング用
電極、２７……イオン銃、１９……修正物質用ボ
ンベ、２０……エツチングガス用ボンベ、２８…
…不活性ガス用ボンベ、２６……真空ポンプ。
FIG. 1 is a diagram for explaining the prior art, and FIGS. 2, 3, and 4 are configuration diagrams showing embodiments of the present invention. Explanation of symbols, 1a, 1b...Laser oscillator, 1
6... Reaction container, 23... Electrode for plasma etching, 27... Ion gun, 19... Cylinder for correction substance, 20... Cylinder for etching gas, 28...
...Inert gas cylinder, 26...Vacuum pump.
Claims (1)
修正箇所上に形成されているパツシベーシヨン膜
又は酸化膜に対してエツチング除去し、その後こ
の修正箇所にレーザ光を照射してレーザCVDに
より有機金属ガスを分解して金属薄膜を析出させ
て配線修正を行なうことを特徴とするLSI配線修
正方法。 ２ 上記エツチング除去をエネルギビーム照射に
よることを特徴とする特許請求の範囲第１項記載
のLSI配線修正方法。 ３ 反応装置内において、少なくともLSI配線の
修正箇所上に形成されているパツシベーシヨン膜
又は酸化膜に対してエツチング除去するエツチン
グ手段と、上記反応装置内において、上記修正箇
所にレーザ光を照射してレーザCVDにより有機
金属ガスを分解して金属薄膜を析出させて配線修
正を行なう配線修正手段とを備えたことを特徴と
するLSI配線修正装置。 ４ 上記エツチング手段は、エネルギビーム照射
手段で構成したことを特徴とする特許請求の範囲
第３項記載のLSI配線修正装置。[Claims] 1. In a reaction device, the passivation film or oxide film formed at least on the repaired portion of the LSI wiring is etched and removed, and then the repaired portion is irradiated with laser light to perform laser CVD. An LSI wiring repair method characterized by repairing the wiring by decomposing an organic metal gas and depositing a metal thin film. 2. The LSI wiring repair method according to claim 1, wherein the etching removal is performed by energy beam irradiation. 3. In the reaction device, etching means for etching away at least the passivation film or oxide film formed on the repaired portion of the LSI wiring; An LSI wiring repair device comprising a wiring repair means for repairing wiring by decomposing an organic metal gas by CVD and depositing a metal thin film. 4. The LSI wiring repair apparatus according to claim 3, wherein the etching means is constituted by energy beam irradiation means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60063502A JPS61224342A (en) | 1985-03-29 | 1985-03-29 | Correction for lsi aluminum wiring and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60063502A JPS61224342A (en) | 1985-03-29 | 1985-03-29 | Correction for lsi aluminum wiring and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61224342A JPS61224342A (en) | 1986-10-06 |
| JPH0573052B2 true JPH0573052B2 (en) | 1993-10-13 |
Family
ID=13231069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60063502A Granted JPS61224342A (en) | 1985-03-29 | 1985-03-29 | Correction for lsi aluminum wiring and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61224342A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH081928B2 (en) * | 1986-12-17 | 1996-01-10 | 株式会社日立製作所 | Method for forming connection wiring structure of multilayer wiring |
| JPH084089B2 (en) * | 1986-12-22 | 1996-01-17 | 株式会社日立製作所 | IC element and wiring connection method in IC element |
| JP2594941B2 (en) * | 1987-05-11 | 1997-03-26 | 株式会社日立製作所 | IC wiring connection method and device |
| JP2527183B2 (en) * | 1987-05-20 | 1996-08-21 | 株式会社日立製作所 | Processing method and wiring correction method for semiconductor device |
| JPH03253058A (en) * | 1990-03-01 | 1991-11-12 | Hitachi Ltd | Method and system for repairing semiconductor integrated circuit |
-
1985
- 1985-03-29 JP JP60063502A patent/JPS61224342A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61224342A (en) | 1986-10-06 |
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