JP2594941B2 - IC wiring connection method and device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor integrated circuit (hereinafter, referred to as an IC) for IC wiring for connecting internal wirings after a chip is completed for debugging, correction, failure analysis, and the like. The present invention relates to a connection method and a device therefor.

[Conventional technology]

In recent years, along with the high integration and miniaturization of ICs, design errors and process errors have been made by debugging and correcting defective parts by cutting or connecting some of the wiring in the LSI chip during the development process. It is becoming increasingly important to find and perform failure analysis and return it to process conditions to improve product yield. Conventionally, there has been reported an example in which an IC wiring is cut by a laser or an ion beam for such a purpose.

That is, as the first prior art, Techno, Digest of Cleo 81, 1981, p. 160 (Tech. Digest of CLE)
O'81 1981, p160) "Laser Stripe Cutting System for Icy Debaking (Laser Stripe C
utting System for IC debugging), in which an example is reported in which wiring is cut by a laser to debug a defective portion. Further, as a second prior art, there is Japanese Patent Application No. 58-42126, in which an ion beam from a liquid metal ion source is focused on a spot of 0.5 μm or less so as to cope with fine wiring. A technique is disclosed in which wiring is cut or drilled, and the upper and lower wirings are connected by vapor deposition in these holes with an ion beam.

A third prior art is the Extended Abstract of the 17th Conference on Solid State Devices and Materials 1985, p. 193 (Exten
ded Abstruct of 17th Conf.on Solid state Devices
and Material 1985, p193) "Direct Writing of Highly Conductive Mo Lines by Laser Induced Chemical Vapor Deposition (Direct Writing of Highly Conductive Mo Lines by
Laser Induced CVD).

[Problems to be solved by the invention]

In the first prior art, only the means for cutting the wiring is shown, and no means is shown for the connection between the wirings. When the laser processing method is used, (1) the processing process is thermal, and there is heat conduction to the surroundings;
It is extremely difficult to perform fine processing of 0.5 μm or less due to processes such as ejection. (2)
Laser light is hardly absorbed by insulating films such as SiO ₂ and Si ₃ N ₄
For this reason, it is absorbed by the lower Al and poli Si wirings and the like, and when it evaporates and blows out, the upper insulating film is explosively blown off to process the insulating film. Therefore, when the insulating layer is thicker than 2 μm, processing is difficult. In addition, damage to the periphery (periphery, upper and lower layers) is large, which causes a defect. From these results, it is difficult to process multilayer wiring and finely integrated wiring.

Further, in the second prior art, there are shown (1) means for cutting and drilling with a focused ion beam, and (2) means for connecting upper and lower wirings using a focused ion beam. The processing by the focused ion beam covers the problems in the first prior art because processing of 0.5 μm or less is possible, and any material can be processed easily from the upper layer by sputtering. However, only the procedure for connecting the upper and lower wirings is shown for the means of connection between the wirings in (2) ', and there is no mention of the means for connecting from one wiring to a wiring in another place. Not been.

In a third conventional technique, in a gas of an organic compound of a metal such as Mo (CO) ₆ (molybdenum carbonyl),
Irradiate the ultraviolet laser on the Si substrate coated with SiO ₂ ,
Phctothermal or photochemi
A method is disclosed in which Mo (CO) ₆ is decomposed by a cal) laser-induced CVD process, a metal such as Mo is deposited on a substrate, and a metal wiring is directly formed by drawing. However, in this case, only the wiring of Mo is formed on the insulating film, and means for connecting the wirings below the insulating film such as a protective film and an interlayer insulating film in an actual IC is shown. Absent.

An object of the present invention is to enable fine holes to be formed in an insulating film such as a protective film or an interlayer insulating film in an IC so as to wire-connect a wiring under the wiring and another part, and particularly to a wiring under the protective film. IC that prevents short-circuiting of the upper wiring and the IC so that IC debugging, correction, failure analysis, etc. can be performed.
An object of the present invention is to provide a wiring connection method and a wiring connection device.

[Means for solving the problem]

The present invention provides a method of forming a new wiring film connected to the lower wiring of an IC element having a plurality of wirings of at least an upper wiring and a lower wiring, the lower wiring forming a new wiring film. Irradiating the focused ion beam on the upper part of the wiring and drilling to remove the insulating film and the upper wiring on the lower wiring, and irradiating the surface of the IC element and the ion beam by sputtering or CVD An insulating film is formed inside the hole formed by performing the hole forming process, and by irradiating a focused ion beam into the hole formed with the insulating film to perform a hole forming process, the underlying wiring is exposed, and the atmosphere of the material gas is exposed. By scanning and irradiating a laser beam on a portion where a new wiring film including a lower wiring portion exposed in the inside is to be formed, a metal wiring film is deposited on a portion where a new wiring film is to be formed, and etching is performed. The process is performed by removing the insulating film other than the portion covered with the metal wiring film deposited by irradiating the laser beam in the formed insulating film.

Further, the present invention provides a new method of forming a new wiring film for connecting a lower wiring of an IC element having at least an upper wiring and a lower wiring to a different wiring and a different wiring. By irradiating a focused ion beam on the upper part of the lower wiring forming the wiring film and performing drilling, the upper insulating film and the upper wiring of the lower wiring are removed,
A focused ion beam is irradiated on the upper part of another different wiring to perform drilling, thereby removing at least the insulating film on the upper part of the different wiring, and irradiating the surface of the IC element and the ion beam by sputtering or CVD. An insulating film is formed inside the upper hole of the lower wiring forming a new wiring film processed by the above process and the upper hole of another different wiring, and the upper wiring of the lower wiring forming the new wiring film is formed. The lower layer wiring is exposed by irradiating the focused ion beam inside the hole, the other different wiring is exposed by irradiating the focused ion beam inside the upper hole of another different wiring, and the material gas is exposed. The lower wiring exposed by scanning and irradiating a laser beam from a lower wiring part exposed in the atmosphere to another different wiring part exposed in the atmosphere is connected to another different wiring exposed. Genus wiring film to precipitate, was carried out by removing the insulating film other than covered by the metal wiring film is deposited by irradiating portion of the laser beam of the insulating film formed by etching.

Further, the present invention provides a device for connecting an IC wiring, a vacuum vessel having a vacuum exhaust means and a mounting means for mounting a sample therein, a high-intensity ion source, and an ion beam generated from the high-intensity ion source. A focused ion beam irradiating means having an electrostatic optical system for focusing and a deflection electrode for deflecting the focused ion beam; and detecting secondary particles generated from the sample when the focused ion beam is irradiated on the sample. Means for displaying a SIM image on a display by means of a vacuum container, means for forming an insulating film over the entire surface of the sample, and means for forming the insulating film over the entire surface of the sample. A laser beam irradiating means for irradiating the laser beam focused on the surface of the sample installed therein, and a part for irradiating the ion beam focused on the sample by the focused ion beam means of the vacuum vessel; Separation connection means for performing a vacuum separation connection with a portion of the sample irradiated with the laser beam focused by the laser beam irradiation means, and a laser beam focused by the laser beam irradiation means separated vacuum by the separation connection means. Gas supply means for supplying a wiring material gas to the side of the portion to be irradiated, and removing means for removing the insulating film exposed on the sample surface from the insulating film formed over the entire surface of the sample by the insulating film forming means And was configured.

[Action]

With this configuration, the positions of a plurality of wirings to be connected are detected by using a scanning ion microscope using a secondary electron signal or a secondary ion signal from a sample, and after positioning and determination of an irradiation position are performed, A beam is irradiated to remove the insulating film above the wiring in this portion. In this case, since a focused ion beam is used instead of a laser,
It is sufficiently possible to focus and process to less than m. In addition, since there is no processing selectivity depending on the material, an insulating film such as SiO ₂ or Si ₃ N ₄ can be sequentially processed from the upper portion, and a hole can be formed in the insulating film to expose the lower wiring. Then, an insulator is deposited on the inner surface of the hole by sputtering or the like so that the upper wiring is not exposed, and then a gas of a metal compound is introduced into the vacuum vessel from a nozzle or a pipe, and the sample table is relatively moved. The metal wiring is formed by a laser CVD process so that a focused laser beam is applied to a portion where the wiring is to be formed. As a result, the internal wiring can be connected after the IC is completed without short-circuiting between the laser beam CVD metal film connected to the lower wiring and the upper wiring, and debugging, correction, failure analysis, and the like of the IC can be performed.

〔Example〕

FIG. 1 is a diagram showing a basic concept of forming a connection wiring to an IC according to the present invention. FIG. 1 (a) is a diagram showing a portion including a cross section obtained by cutting a part of an IC chip as viewed obliquely from above. In the cross section, the insulating film 3 (Si
O _2, etc.) there is, wiring thereon (such as Al) 2a, 2b, 2c are formed, are further protective film on top (such as _{SiO 2, Si 3 N 4)} 1 is formed. Now, when it is desired to electrically connect the wirings 2a and 2c, holes 5a and 5c are made in the protective film 1 on the wirings 2a and 2c by a focused ion beam, and a part 6a of the wiring 2a and a part 6c of the wiring 2c are formed. Are exposed.

Then ion beam induced CVD technology or laser induced CVD
As shown in FIG. 1B, a metal wiring 7 is formed in a direction connecting the holes 5a and 5c by a technique. In this way, wiring 2a
2c is connected through a metal wiring 7.

FIG. 2 shows an embodiment of forming a metal wiring according to the first and second aspects of the present invention.

In recent years, metal wiring suitable for high integration of elements has been multilayered
There are many ICs.

This embodiment shows a case in which a two-layer wiring structure composed of an upper layer Al80 and a lower layer Al81 is used, and it is desired to form a connection wiring from only the lower layer Al81 to a wiring at another location. In this case, in the method described above (the method shown in FIG.
82 is connected to both the lower layer Al81 and the upper layer Al80. Then, as shown in FIG.
After drilling up to 80, as shown in FIG.
An insulating film 83 such as O ₂ is formed, and thereafter, as shown in FIG. 2D, further processing is performed on the interlayer insulating film 84 to expose the lower layer Al81.

Means for forming the insulating film may be ordinary sputter deposition, plasma CVD, or another method (such as photo CVD or ion beam CVD). Since a normal IC is used at a voltage of about 5 V, the required thickness is about 10 nm if an SiO ₂ film (withstand voltage of about 1 V / nm) is used. Thereafter, a wiring 85 is formed by laser or ion beam induced CVD to connect the lower layer Al81 to another wiring.

When an insulating film is formed by sputtering deposition or plasma CVD, the insulating film is formed on the entire surface of the IC. For this reason, depending on the element, an insulating film is also formed on an electrode (pad, bump, etc.) for extracting a signal from the IC to the outside or for receiving a power supply voltage from the outside. The thickness of the insulating film may be 10 nm = 0.01 μm or more, and the thickness of the wiring by laser CVD or the like is about 0.5 μm. Therefore, if the surface layer is removed by about 0.1 μm by sputter etching after forming the wiring by utilizing the difference in film thickness between the two, the insulating film can be removed without damaging the wiring as shown in FIG. 2 (f). It is.

FIG. 3 shows an embodiment of the wiring connection device according to the third and fourth aspects of the present invention. The reaction vessel 16 to which the IC chip 18 having the wiring connection point is attached is connected to a correction substance (Al (CH ₃ ) ₃ , Al (C ₂ H ₅ ) ₃ , Al (1C ₄ H ₉ ) ₃ , Cd (CH ₃ )
₂ , a correction substance container 19 containing Cd (C ₂ H ₅ ) ₂ , an organometallic compound such as Mo (CO) ₆ ) and a vacuum pump 36 ′ through a valve 25.
And an inert gas cylinder 28 such as argon via a valve 29 by piping.

The laser light oscillated by the laser oscillator 8a is
The light is reflected by the dichroic mirror 9a through a, condensed by the objective lens 23, and passes through the window 15 provided in the reaction vessel 16.
It is designed to be able to irradiate the repaired part of the LSI aluminum wiring. ing.

A reserve gas cylinder 20 is connected to the reaction vessel 16 via a valve 22. The IC chip is mounted on a stage 24 placed on the XY stage 17.

Next to the laser beam irradiation part, there is an electrode 100 for forming an insulating film by sputtering, to which power is supplied from a high frequency power supply 101. The stage 24 is located just below the sputter electrode 100 at position 2.
Since it is movable to 4c and is electrically grounded, it is possible to generate a high-frequency discharge 102 in pairs with the sputter electrode 100. An insulating target material 103 is attached to the sputter electrode, and an insulating film can be formed on the IC chip 18c by high-frequency discharge. A vacuum vessel 39 for ion beam processing is attached next to the reaction vessel 16, and an ion beam column 26 is attached above the vacuum vessel 39. In the ion beam processing vacuum container 39, there is an XY stage 40, and when the stage 17 and the stage 40 move near the gate valve 25, the gate valve is opened,
Although not shown, the loading table 24 can be transferred between the stages 17 and 40 by a chuck mechanism installed on the stages 17 and 40. Therefore, the mounting table 24 and the IC chip 18 mounted on the mounting table 24 by this transfer and subsequent movement of the stage
You can come to the 18a position. At this position, an ion beam 40 extracted from a high-intensity ion source (for example, a liquid metal ion source such as Ga) 27 in an upper ion beam column 26 by an extraction electrode 30 provided thereunder is an electrostatic lens.
The beam is focused and deflected through a blanking electrode 32, a deflector electrode 33, and the like, and is irradiated onto the sample 18a. The vacuum vessel 39 is provided with a secondary particle detector 34, which amplifies the secondary particle signal from the sample in synchronization with the deflection signal of the deflection electrode power supply 37 and scans the monitor 38 with a scanning ion microscope image of the sample. Thus, an enlarged image of the sample is obtained, and the detection and alignment of the sample can be performed. A vacuum pump 36 is connected to the vacuum container via a valve 35 to exhaust air. The vacuum vessels 16 and 39 are provided with preliminary exhaust chambers 43 for taking samples in and out.

That is, when the gate valve 41 is opened, the stage 24a on the stage 40 can move to the position of 24b, 18b on the moving stage 42 together with the IC 18a thereon.

The preliminary exhaust pipe is exhausted by the valve 45 and the exhaust pump 46. The sample can be exchanged by opening the lid 44 to the position 44a.

The preliminary exhaust chamber 43 has an electrode 104 for sputter etching.
At the ground potential. The stage 24b is electrically insulated from the chamber, and is supplied with power from the high frequency power supply 105. An inert gas can be introduced into the preliminary exhaust chamber from the inert gas cylinder 28 via the valve 116. With this configuration, discharge plasma of an inert gas can be generated between the electrode 104 and the stage 24b. Since the stage 24b is a high-frequency application electrode, the I placed on the stage 24b
The C chip is bombarded with inert gas ions and sputter-etched.

Hereinafter, the operation method of this device will be described. Open the lid 44, IC
The chip 18b is set on the stage 24b on the stage 42. The lid 44 is closed, the valve 45 is opened, and the preliminary exhaust chamber 43 is evacuated by the vacuum pump 46 to a vacuum. Thereafter, the gate valve 41 is opened, and the stage is transferred to the position 24b. Gate valve 41
Then, after exhausting sufficiently, the ion beam is focused while moving the stage 40, and the scanned ion image is observed on the monitor 38 to detect a portion to be connected on the IC. Thereafter, as shown in FIG. 2 (b), an ion beam is applied only to a portion to be connected, and the interlayer insulating film 84 is processed halfway. When a plurality of holes need to be drilled, the same processing is performed for all the portions. Next, open the gate valve 25,
The stage is transferred to the position 24c. Here, while the reaction vessel 16 is evacuated, the valve 29 is opened, an inert gas such as argon is flowed, and the pressure is adjusted to a pressure (10 ⁻² to 10 ⁻¹ To
Adjust the valve 25 so that rr). After this, the high frequency power supply 10
Power is supplied to the electrode 100 from 1 to generate a plasma discharge,
The target material 103 is sputtered with argon ions to form a SiO ₂ film on the IC chip. The IC chip is now in the state shown in FIG.

Next, the gate valve 25 is opened again, and the stage is moved to the position 24a. A portion to be connected is irradiated with an ion beam by the same procedure as described above, thereby exposing the lower wiring 81 as shown in FIG. 2D. Exactly the same processing is performed for a plurality of processing required portions.

Thereafter, the gate valve 25 is opened and the stage is moved to the position 24.

The LSI chip is moved to the irradiation position of the laser beam by the XY stage 17, and the position of the wiring correction position is aligned. Thereafter, the valve 21 and the valve 29 are opened, and the correction substance and the inert gas are adjusted with a flow meter (not shown) so as to have an appropriate mixing ratio, and the total pressure is adjusted to several tens to several hundred Torr. Adjust the valve 25 to achieve After that, the shutter 30a is opened, the laser light is irradiated to the wiring correction portion, and after a certain time, the shutter 30a is closed. By this laser irradiation, the organic metal gas in the vicinity of the laser irradiation part is decomposed, and a metal thin film such as Al or Cd, Mo is deposited, and the wiring is corrected. Correct all the aluminum wiring correction points in the LSI chip as necessary. Next, the valve 25 is opened, the inside of the reaction vessel 16 is sufficiently evacuated, and then the sample is transferred to the ion beam processing vacuum vessel 39 and further to the preliminary exhaust chamber 43.

In the preliminary exhaust chamber 43, the vacuum pump 46 is operated while introducing an inert gas, and the opening degree of the valve 45 is adjusted to obtain an appropriate pressure for sputter etching. Then, power is supplied from the high frequency power supply 105 to the stage 24b to generate plasma, and the surface of the IC chip is sputter-etched. Thereby, the insulating film 83 shown in FIG. 2E is removed. As described above, in order to remove the insulating film 83, etching having a depth of about 0.1 μm may be performed. Since the wiring film thickness by CVD is about 0.5 μm, there is no problem even if the thickness becomes 0.4 μm by etching, and the shape shown in FIG. 2 (f) can be obtained.

In order to carry out the present invention, it suffices to have the functions of ion beam processing, insulating film formation, wiring formation, and insulating film etching.
Therefore, the following can be considered as another embodiment of the device configuration.

FIG. 4 shows an example in which an insulating film is formed by sputtering in the same manner as in the example of FIG. 3, but a sputter film forming mechanism 106 is installed in a vacuum vessel 39 for ion beam processing. In this case, since the ion beam column 26 must be kept at a level of 10 ⁻⁷ Torr even during film formation by sputtering (at a pressure of 10 ⁻² Torr or more), it is necessary to add the differential pumping system 107. However, since sputter deposition is not performed in the reaction vessel 16 contaminated by CVD as in the case of FIG. 3, a high-quality film can be obtained. The sputter etch mechanism 108
It is installed in.

FIG. 5 shows an ion beam processing apparatus shown in FIG.
This is an embodiment in which the laser CVD apparatus shown in FIG. The ion beam processing apparatus of (a) includes an ion beam column 26 and a differential evacuation system 107 for the same, and a spatter beam 106 is installed in an ion beam processing vacuum container 39. The preliminary exhaust chamber 43 is a vacuum vessel 39 for ion beam processing.
It is provided continuously. In the laser CVD apparatus of (b), the preliminary exhaust chamber 43 is connected to the laser CVD reaction vessel 16. The preliminary exhaust chamber 43 has a sputter etch mechanism 108
Is provided. In the configuration of FIG. 5, the IC chip is
At the stage where the lower wiring 81 is exposed as shown in FIG.
Once extracted from the ion beam processing equipment into the atmosphere. Thereafter, the IC chip is put into the laser CVD device. However, once exposed to the atmosphere, the exposed lower wiring 81 has a natural oxide film
It is formed with a thickness of 2 nm. Therefore, the sputter etch mechanism 108 is used to remove the natural oxide film. Thereafter, the step of forming wiring by laser CVD is as described above.

Separating the two devices has disadvantages such as an increase in the area occupied by the devices, but has the advantage of improving the reliability of the devices since each device has a simple configuration.

In the above embodiment, the sputtering method is used as the insulator film forming means. However, the present invention is not limited to this.
It is obvious that another method such as the law may be used.

Also, an example using laser CVD for wiring formation has been described,
The invention is not limited to this, and it is obvious that other energy beams such as ion beam CVD may be used.

Further, in the above embodiments, the drilling process, the insulating film formation,
Although the functions of forming the wiring and removing the insulating film are separately provided in a plurality of containers, the method of dividing the functions is not limited to FIGS.

〔The invention's effect〕

As described above, according to the present invention, it is possible to arbitrarily connect wirings at different locations of a highly integrated and multi-layered wiring IC, thereby enabling failure analysis in LSI design, trial manufacture, and mass production processes. It can be easily performed, and has an effect that the development process can be shortened, the mass production start-up period can be shortened, and the yield can be improved.

[Brief description of the drawings]

FIG. 1 is a view for explaining the basic concept of a method for connecting between IC wirings according to the present invention, and FIG. 2 is a view showing a window to wiring according to the present invention, insulation of upper layer wiring, connection of wiring, and formation of an insulating film. FIGS. 3 to 5 are diagrams showing an IC wiring connection device according to the present invention. 1,60 ... Protective film, 2a ~ 2c, 80,81 ... Wiring, 3,83,84 ...
Insulating film, 4 ... board, 6a, 6c, 7, 82, 85 ... wiring, 8a ...
Laser oscillator, 16: Reaction vessel, 17, 40 XY stage, 19: Correction substance vessel, 27 ... Ion source, 28 ... Inert gas cylinder, 31 ... Electrostatic lens, 39 ... Ion beam machining Vacuum container, 100: Sputter deposition electrode, 104: Sputter etch electrode, 101, 105: High frequency power supply, 106: Sputter deposition mechanism, 107: Differential exhaust system, 108: Sputter etch mechanism.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hiroshi Yamaguchi 292, Yoshida-cho, Totsuka-ku, Yokohama-shi Inside Hitachi, Ltd. Production Engineering Laboratory Co., Ltd. (72) Inventor Kenko Miyauchi 292, Yoshida-cho, Totsuka-ku, Yokohama-shi Hitachi, Ltd. Inside the Technical Research Institute (72) Keiya Saito 292, Yoshida-cho, Totsuka-ku, Yokohama, Japan Inside the Manufacturing Technology Laboratory, Hitachi, Ltd. (72) Takahiko Takahashi 2326, Imai, Ome-shi, Hitachi, Ltd.Device Development Center, Hitachi, Ltd. (56 References JP-A-6-295910 (JP, A) JP-A-59-168652 (JP, A) JP-A-59-119853 (JP, A) JP-A-60-245227 (JP, A) JP-A-60-245227 61-224342 (JP, A) JP-A-61-237446 (JP, A)

Claims (7)

(57) [Claims] 1. A method for forming a new wiring film connected to a lower wiring of an IC element having a plurality of wirings of at least an upper wiring and a lower wiring, the method comprising: A hole is formed by irradiating a focused ion beam to the upper part of the lower wiring to be formed, thereby removing the insulating film and the upper wiring on the lower wiring, and sputtering or CVD of the IC element. An insulating film is formed on the surface and inside the hole processed by irradiating the ion beam, and the inside of the hole formed with the insulating film is irradiated with the focused ion beam to perform drilling, thereby forming the lower layer. A new wiring film is to be formed by exposing the wiring and scanning and irradiating a laser beam to a portion where a new wiring film including the exposed lower wiring portion is to be formed in a material gas atmosphere. A metal wiring film is deposited separately, and the insulating film other than the portion covered with the deposited metal wiring film by irradiating the laser beam out of the formed insulating film by etching is removed. Wiring connection method. 2. The method according to claim 1, wherein the step of removing the wiring film is performed by sputter etching. 3. A method of forming a new wiring film for connecting said lower wiring and another different wiring of an IC element having a plurality of wirings of at least an upper wiring and a lower wiring, By irradiating a focused ion beam on the upper part of the lower wiring to form the new wiring film and performing drilling, the insulating film and the upper wiring on the lower wiring are removed, and the other By irradiating a focused ion beam to the upper part of the different wiring to perform drilling, at least the insulating film on the other different wiring is removed, and the surface of the IC element and the ion beam are sputtered or CVD. Forming an insulating film inside the upper hole of the lower wiring forming the new wiring film processed by irradiation and the upper hole of the different wiring, forming the new wiring film; Arrangement Irradiating the focused ion beam to the inside of the upper hole of the other to expose the lower wiring, irradiating the focused ion beam to the inside of the upper hole of the other different wiring and the other A different wiring is exposed, and the exposed lower wiring is irradiated by scanning and irradiating a laser beam from the exposed lower wiring part to the exposed different wiring part in a material gas atmosphere. Depositing a metal wiring film connecting the exposed different wiring, and insulating the insulating film formed by etching except for a portion covered with the metal wiring film deposited by irradiating the laser beam with the laser beam; A method for connecting an IC wiring, comprising removing a film. 4. The method according to claim 3, wherein the removal of the wiring film is performed by sputter etching. 5. A vacuum vessel having a vacuum exhaust means and a mounting means for mounting a sample therein, a high-intensity ion source, an electrostatic optical system for focusing an ion beam generated from the high-intensity ion source, and A focused ion beam irradiating means having a deflection electrode for deflecting the focused ion beam; detecting secondary particles generated from the sample when irradiating the sample with the focused ion beam and displaying the secondary particles on a display SIM image display means, an insulating film forming means for forming an insulating film over the entire surface of the sample, and an inside of the vacuum vessel from outside the vacuum vessel through a laser transmission window provided in the vacuum vessel. A laser beam irradiating means for irradiating a laser beam focused on the surface of the sample, the ion beam focused on the sample by the focused ion beam means of the vacuum vessel. Separation connection means for performing a vacuum separation connection between a part for irradiating a beam and a part for irradiating the sample with the focused laser beam by the laser beam irradiation means; and Gas supply means for supplying a wiring material gas to a portion of the sample to be irradiated with the focused laser beam by the laser beam irradiation means; and insulation formed over the entire surface of the sample by the insulating film forming means Removing means for removing the insulating film exposed on the surface of the sample among the films. 6. The IC wiring connection device according to claim 5, wherein said insulating film forming means is sputter deposition means. 7. The IC wiring connection apparatus according to claim 5, wherein said insulating film forming means is a CVD means.