JPH0127568B2 - - Google Patents

Info

Publication number
JPH0127568B2
JPH0127568B2 JP54086708A JP8670879A JPH0127568B2 JP H0127568 B2 JPH0127568 B2 JP H0127568B2 JP 54086708 A JP54086708 A JP 54086708A JP 8670879 A JP8670879 A JP 8670879A JP H0127568 B2 JPH0127568 B2 JP H0127568B2
Authority
JP
Japan
Prior art keywords
silicon carbide
carbide film
base material
carbon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54086708A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5610921A (en
Inventor
Masao Koyama
Hideyasu Matsuo
Chiaki Nakayama
Katsumi Hoshina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP8670879A priority Critical patent/JPS5610921A/ja
Priority to US06/162,943 priority patent/US4424193A/en
Priority to DE3026030A priority patent/DE3026030C2/de
Publication of JPS5610921A publication Critical patent/JPS5610921A/ja
Priority to US06/701,641 priority patent/US4624735A/en
Publication of JPH0127568B2 publication Critical patent/JPH0127568B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057—Carbides
    • C04B41/5059—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP8670879A 1979-07-09 1979-07-09 Material for equipment for manufacturing semiconductor and its treating furnace Granted JPS5610921A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8670879A JPS5610921A (en) 1979-07-09 1979-07-09 Material for equipment for manufacturing semiconductor and its treating furnace
US06/162,943 US4424193A (en) 1979-07-09 1980-06-25 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
DE3026030A DE3026030C2 (de) 1979-07-09 1980-07-09 Vorrichtungsteil für die Halbleitertechnik, Verfahren und Vorrichtung zu dessen Herstellung
US06/701,641 US4624735A (en) 1979-07-09 1985-02-11 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8670879A JPS5610921A (en) 1979-07-09 1979-07-09 Material for equipment for manufacturing semiconductor and its treating furnace

Publications (2)

Publication Number Publication Date
JPS5610921A JPS5610921A (en) 1981-02-03
JPH0127568B2 true JPH0127568B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-05-30

Family

ID=13894411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8670879A Granted JPS5610921A (en) 1979-07-09 1979-07-09 Material for equipment for manufacturing semiconductor and its treating furnace

Country Status (3)

Country Link
US (2) US4424193A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5610921A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3026030C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610921A (en) * 1979-07-09 1981-02-03 Toshiba Ceramics Co Ltd Material for equipment for manufacturing semiconductor and its treating furnace
EP0164928A3 (en) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Vertical hot wall cvd reactor
US4717444A (en) * 1985-09-03 1988-01-05 Hughes Aircraft Company Method for making high-purity, essentially crack-free crystals
JP2671914B2 (ja) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 サセプタ
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
DE3806001A1 (de) * 1988-02-25 1989-09-07 Siemens Ag Anordnung zum vollstaendigen entleeren von mit siliziumschmelze gefuellten quarzwannen oder -tiegeln nach dem siliziumbandziehen
FR2712285B1 (fr) * 1993-11-12 1995-12-22 Lorraine Carbone Traitement de surface de matériau carbone pour rendre adhérent un dépôt ultérieur de diamant et pièces revêtues de diamant obtenues.
SE9500327D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Device for epitaxially growing SiC by CVD
DE59901313D1 (de) * 1998-07-13 2002-05-29 Siemens Ag VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
DE102005045081B4 (de) * 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
KR101009373B1 (ko) 2009-06-04 2011-01-19 한국에너지기술연구원 탄화규소 후막의 형성방법 및 이를 이용하여 형성된 탄화규소 후막
JP5737547B2 (ja) * 2009-09-04 2015-06-17 東洋炭素株式会社 炭化ケイ素被覆黒鉛粒子の製造方法及び炭化ケイ素被覆黒鉛粒子
CN111952149A (zh) * 2013-05-23 2020-11-17 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
CN118221122A (zh) * 2018-08-27 2024-06-21 株式会社大阪钛技术 SiO粉末的制造方法及球形颗粒状SiO粉末
CN113045187B (zh) * 2021-04-20 2025-03-18 烟台核晶陶瓷新材料有限公司 新型多晶硅铸锭用高导热复合坩埚及其制备方法
US20250075370A1 (en) * 2023-08-31 2025-03-06 Stmicroelectronics International N.V. Substrate coated with a silicon-carbide (sic) layer and a method of manufacturing the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2431326A (en) 1942-10-29 1947-11-25 Carborundum Co Silicon carbide articles and method of making same
US3011912A (en) 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide
DE1187591B (de) 1961-09-08 1965-02-25 Degussa Verfahren zur Herstellung von Siliziumcarbid oder dieses enthaltenden Mischungen
US3348915A (en) * 1961-11-07 1967-10-24 Norton Co Method for producing a crystalline carbide, boride or silicide
US3236780A (en) * 1962-12-19 1966-02-22 Gen Electric Luminescent silicon carbide and preparation thereof
US3343920A (en) * 1966-01-11 1967-09-26 Norton Co Furnace for making silicon carbide crystals
US3459504A (en) 1966-10-21 1969-08-05 Texas Instruments Inc Formation of carbide compounds by vapor deposition on graphite bodies
US3503717A (en) * 1966-12-22 1970-03-31 Wayne D Wilson Crystallization at high pressure to prevent self diffusion of materials
NL6705848A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1967-04-26 1968-10-28
GB1242051A (en) 1967-05-08 1971-08-11 Nat Res Dev Improvements in the manufacture of silicon carbide
DE1907076A1 (de) 1969-02-13 1970-09-03 Schunk & Ebe Gmbh Graphitheiz- und/oder -traegerelement
US3565703A (en) * 1969-07-09 1971-02-23 Norton Research Corp Silicon carbide junction diode
JPS5422440B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-07-06 1979-08-07
US4080508A (en) * 1976-03-17 1978-03-21 Greenewald Jr Herbert Manufacture of carbides and the like
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
JPS54122312A (en) * 1978-03-15 1979-09-21 Hiroshige Suzuki Silicon carbide powder for sintering use and preparation thereof
US4166841A (en) 1978-05-03 1979-09-04 Ford Motor Company Method for making pure beta silicon carbide
DE2852410C2 (de) * 1978-12-04 1981-12-03 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren und Vorrichtung zur Herstellung von Siliciumcarbid-Formkörpern
JPS5610921A (en) * 1979-07-09 1981-02-03 Toshiba Ceramics Co Ltd Material for equipment for manufacturing semiconductor and its treating furnace

Also Published As

Publication number Publication date
DE3026030C2 (de) 1983-11-10
US4424193A (en) 1984-01-03
DE3026030A1 (de) 1981-01-15
US4624735A (en) 1986-11-25
JPS5610921A (en) 1981-02-03

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