JPH01257200A - ＧａＡｓ化合物半導体基板の製造方法 - Google Patents

ＧａＡｓ化合物半導体基板の製造方法

Info

Publication number
JPH01257200A
JPH01257200A JP8511788A JP8511788A JPH01257200A JP H01257200 A JPH01257200 A JP H01257200A JP 8511788 A JP8511788 A JP 8511788A JP 8511788 A JP8511788 A JP 8511788A JP H01257200 A JPH01257200 A JP H01257200A
Authority
JP
Japan
Prior art keywords
heat treatment
resistivity
substrate
compound semiconductor
ingot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8511788A
Other languages
English (en)
Japanese (ja)
Other versions
JPH058156B2 (enExample
Inventor
Yasuo Otsuki
康夫 大槻
Yoshio Nakamura
中村　芳雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP8511788A priority Critical patent/JPH01257200A/ja
Publication of JPH01257200A publication Critical patent/JPH01257200A/ja
Publication of JPH058156B2 publication Critical patent/JPH058156B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8511788A 1988-04-08 1988-04-08 ＧａＡｓ化合物半導体基板の製造方法 Granted JPH01257200A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8511788A JPH01257200A (ja) 1988-04-08 1988-04-08 ＧａＡｓ化合物半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8511788A JPH01257200A (ja) 1988-04-08 1988-04-08 ＧａＡｓ化合物半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPH01257200A true JPH01257200A (ja) 1989-10-13
JPH058156B2 JPH058156B2 (enExample) 1993-02-01

Family

ID=13849688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8511788A Granted JPH01257200A (ja) 1988-04-08 1988-04-08 ＧａＡｓ化合物半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPH01257200A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216999A (ja) * 1986-03-14 1987-09-24 Shin Etsu Handotai Co Ltd 化合物半導体単結晶およびその製造方法
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216999A (ja) * 1986-03-14 1987-09-24 Shin Etsu Handotai Co Ltd 化合物半導体単結晶およびその製造方法
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal

Also Published As

Publication number Publication date
JPH058156B2 (enExample) 1993-02-01

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