JPH01248567A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH01248567A
JPH01248567A JP7712488A JP7712488A JPH01248567A JP H01248567 A JPH01248567 A JP H01248567A JP 7712488 A JP7712488 A JP 7712488A JP 7712488 A JP7712488 A JP 7712488A JP H01248567 A JPH01248567 A JP H01248567A
Authority
JP
Japan
Prior art keywords
gate
film
oxide film
layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7712488A
Other languages
Japanese (ja)
Inventor
Seiji Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7712488A priority Critical patent/JPH01248567A/en
Publication of JPH01248567A publication Critical patent/JPH01248567A/en
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To suppress an increase in a gate resistance without varying the thickness of an oxide film formed on the sidewall of a gate electrode eve if a gate metal is thinned by forming a silicon oxide film or a silicon nitride film and a silicide film on the upper layer of the gate electrode of a multilayer made of a gate metal and its silicide.
CONSTITUTION: Silicon is ion implanted to the main surface of a semi-insulating GaAs substrate 1 to form an N-type buried layer 2. Then, a gate tungsten silicide film 3, a gate tungsten 4, a silicon oxide film 5, a tungsten silicide film 6 are sequentially deposited. Thereafter, a deposited layer is removed by dry etching except in a region for forming an electrode. Then, a silicon oxide film 7a is deposited on the whole substrate. Subsequently, a sidewall 7b is formed by dry etching, with the sidewall as a mask silicon is ion implanted to form an N-type diffused layer 8. Then, an N+ type epitaxial layer 9 is formed by epitaxial growth. Then, the films 7b, 5 and the film 6 are removed to form a semiconductor device.
COPYRIGHT: (C)1989,JPO&Japio
JP7712488A 1988-03-29 1988-03-29 Manufacture of semiconductor device Granted JPH01248567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7712488A JPH01248567A (en) 1988-03-29 1988-03-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7712488A JPH01248567A (en) 1988-03-29 1988-03-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH01248567A true JPH01248567A (en) 1989-10-04

Family

ID=13625047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7712488A Granted JPH01248567A (en) 1988-03-29 1988-03-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH01248567A (en)

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