JPH01235280A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH01235280A JPH01235280A JP63061098A JP6109888A JPH01235280A JP H01235280 A JPH01235280 A JP H01235280A JP 63061098 A JP63061098 A JP 63061098A JP 6109888 A JP6109888 A JP 6109888A JP H01235280 A JPH01235280 A JP H01235280A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- substrate
- light
- insulating substrate
- transparent insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000003491 array Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、発光素子と受光素子を組み合わせた光電変換
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoelectric conversion device that combines a light emitting element and a light receiving element.
〔従来の技術］
発光素子と受光素子を組み合わせた電子部品としては、
発光ダイオード（ＬＥＤ）とフォトダイオードを組み合
わせたフォトカプラや、さらにそれらにＭＯＳ）ランジ
スタを組み合わせたフォトリレー等が実用化されている
。[Prior art] Electronic components that combine a light-emitting element and a light-receiving element include:
Photocouplers that combine light emitting diodes (LEDs) and photodiodes, and photorelays that combine them with MOS (MOS) transistors have been put into practical use.
従来のこれらの部品に用いられている光起電力素子は、
いずれもシリコンウェハー上に形成される単結晶タイプ
のフォトダイオードである。ところが、最近コストダウ
ンを目的として、アモルファスシリコン太陽電池を応用
する試みが成されている。アモルファス太陽電池は、ａ
ｌ膜をｍｊｗｔするだけの簡単な工程で作製可能であり
、また、ガラスやセラミック等の各種絶縁基板に形成で
きるので、コストダウンが可能である。The photovoltaic elements conventionally used in these parts are
Both are single-crystal type photodiodes formed on silicon wafers. However, recently, attempts have been made to apply amorphous silicon solar cells for the purpose of cost reduction. Amorphous solar cells are a
It can be manufactured by a simple process of mjwt l film, and it can be formed on various insulating substrates such as glass and ceramic, so it is possible to reduce costs.
［発明が解決しようとする課題］
しかしながら、アモルファス太陽電池は単結晶タイプと
比較すると、短絡電流が低いため、例えば、同一チップ
面積で単結晶からアモルファスに置き換えると、出力が
不足するという問題点があり、実用化には至っていない
。[Problem to be solved by the invention] However, since amorphous solar cells have a lower short-circuit current than single-crystal type solar cells, for example, if a single-crystal type is replaced with an amorphous type with the same chip area, there is a problem that the output will be insufficient. However, it has not yet been put into practical use.
本発明は、上記問題点を改善するためになされたもので
、その目的とするところは、同一チップ面積でありなが
ら高出力が得られる光電変換装置を提供するにある。The present invention was made to improve the above-mentioned problems, and its purpose is to provide a photoelectric conversion device that can obtain high output while having the same chip area.
［発明の開示］
本発明は、透明絶縁基板の両面に光電変換素子７レイを
形成し、前記透明絶縁基板を光ガイドとして光電変換素
子アレイに光を照射して起電力を発生させることにより
、高出力を図ったものである。[Disclosure of the Invention] The present invention includes forming 7 arrays of photoelectric conversion elements on both sides of a transparent insulating substrate, and generating an electromotive force by irradiating the photoelectric conversion element array with light using the transparent insulating substrate as a light guide. It is designed for high output.
以下、本発明を第１図乃至第３図を参照して説明する。Hereinafter, the present invention will be explained with reference to FIGS. 1 to 3.
まず、ガラスまたは石英で形成された透明絶縁基板１の
両面に、下記方法により光電変換素子アレイを形成する
。ここではアモルファスシリコン薄膜太陽電池を形成す
る。また、フォトカプラ等へ応用するには、ある程度高
電圧が必要なため、幾つかのセルが直列に接続された集
積太陽電池とする。First, photoelectric conversion element arrays are formed on both sides of a transparent insulating substrate 1 made of glass or quartz by the method described below. Here, an amorphous silicon thin film solar cell is formed. Furthermore, since a certain level of high voltage is required for application to photocouplers and the like, an integrated solar cell is used in which several cells are connected in series.
まず、透明絶縁基板１の一方の面に透明電極２としてイ
ンジウム・スズ酸化物（ＩＴＯ） または酸化スズ（Ｓ
ｎ０２）をＥＢ蒸着あるいはスパッタリング法により形
成して、フォトリソグラフィ・エツチング工程を通して
所望の形状にパターニングを行なう。First, a transparent electrode 2 made of indium tin oxide (ITO) or tin oxide (S
n02) is formed by EB evaporation or sputtering, and patterned into a desired shape through a photolithography and etching process.
次に、プラズマＣＶＤ法によりアモルファスシリコン層
３をｐｉｎ型に積層して同様にパターニングを行なう、
そして、ＡＩ等の裏面金属電極４を蒸着法あるいはスパ
ッタリング法により形成して、同様にパターニングを行
なう、さらに、素子の信頼性向上と、他方の面に素子を
形成するときに素子が損傷するのを防止する目的で、プ
ラズマＣＶＤ法により５ｉ（ｌまたは５１３Ｎ４のパ７
シベーシ薯ンｉｔｓを形成する。Next, an amorphous silicon layer 3 is laminated in a pin shape using the plasma CVD method and patterned in the same manner.
Then, a back metal electrode 4 of AI or the like is formed by vapor deposition or sputtering and patterned in the same way.Furthermore, it is possible to improve the reliability of the device and to prevent damage to the device when forming the device on the other side. In order to prevent
Form the basics.
しかる後、前記透明絶縁基板１の偽方の面にも前記と同
様の方法で光電変換素子アレイを形成する。Thereafter, a photoelectric conversion element array is formed on the opposite side of the transparent insulating substrate 1 in the same manner as described above.
次に、前記透明絶縁基板ｌの側面に発光素子６を、その
発光が絶縁基板１内に入射するように配設する０発光素
子ａを配設する方法は、第２図に示すようにＬＥＤ６を
接着する方法でも、第３図に示すように面発光素子６を
透明絶縁基板１の側面に形成する方法でもよい。Next, as shown in FIG. Alternatively, a method of forming the surface emitting device 6 on the side surface of the transparent insulating substrate 1 as shown in FIG. 3 may be used.
このようにして形成された光電変換装置において、発光
素子６を介して透明絶縁基板ｌ内に光を入射すると、基
板１内で光が散乱して、基板１の両面に形成された光電
変換素子アレイに入射される。従って、このような光電
変換装置を実装すると、例えば高出力のフォトカプラが
可能となる。In the photoelectric conversion device formed in this manner, when light enters the transparent insulating substrate l through the light emitting element 6, the light is scattered within the substrate 1, and the photoelectric conversion elements formed on both sides of the substrate 1 are scattered. incident on the array. Therefore, by mounting such a photoelectric conversion device, a high-output photocoupler, for example, becomes possible.
特に、２つの光電変換素子アレイを並列に接続すると、
非常に短絡電流の大きいフォトカプラを提供できる。In particular, when two photoelectric conversion element arrays are connected in parallel,
A photocoupler with extremely high short circuit current can be provided.
（実施例）
厚さ１霞−のガラス基板ｌの両面に集積型光電変換素子
を形成した。構造は以下の通りである。(Example) Integrated photoelectric conversion elements were formed on both sides of a glass substrate l having a thickness of 1 haze. The structure is as follows.
チップサイズは３．ＯＸ １．５Ｘ １ （ｍｓ＋
） 、集積型光電変換素子の１つのセルのサイズは０．
４５Ｘ ０．７（ＩＩＩｌｌ）で、これをｌＯ個直列に
接続した。透明電極２としてＩＴＯをＥＢ蒸着により
８００人、充電変換層３としてプラズマＣＶＤ法により
アモルファスシリコン層を６０００人、裏面金属電極４
として真空蒸着によりＡ２を２０００人それぞれ積層し
て、フォトエツチング法によりパターニングを行った。The chip size is 3. OX 1.5X 1 (ms+
), the size of one cell of the integrated photoelectric conversion element is 0.
45×0.7 (IIIll), and 10 pieces of this were connected in series. ITO was deposited as transparent electrode 2 by EB evaporation.
800 people, amorphous silicon layer formed by plasma CVD method as charge conversion layer 3, 6000 people, back metal electrode 4
2000 layers of A2 were each laminated by vacuum evaporation and patterned by photoetching.
これをダイシングにより上記チップサイズに切断した。This was cut into the above chip size by dicing.
そして、超高輝度赤色Ｌ Ｅ Ｄ （１０００ｍｃｄ）
６を２個、第２図に示すようにガラス基板１の側面に固
定して発光させ、特性を測定した０両面に形成された集
積型光電変換素子を並列に接続した時の電流−電圧特性
を下表に示す、なお、比較例として第４図に示すように
、ガラス基板ｌの片面にのみ集積型光電変換素子を形成
し、それと反対側にＬＥＤ６を配置し、その発光を素子
に入射させた時の特性も示す。And super bright red LED (1000mcd)
Current-voltage characteristics when two integrated photoelectric conversion elements formed on both sides of the glass substrate 1 are connected in parallel. As shown in the table below, as a comparative example, as shown in Fig. 4, an integrated photoelectric conversion element is formed only on one side of a glass substrate l, an LED 6 is placed on the opposite side, and the emitted light is incident on the element. The characteristics when used are also shown.
［発明の効果］
本発明は上記のように、透明絶縁基板の両面に光電変換
素子アレイを形成すると共に、上記透明絶縁基板の側面
に発光素子を、その発光が絶縁基板内に入射するように
配設したことにより、同一チップ面積でありながら短絡
電流の大きな、即ち高出力の光電変換装置を得ることが
できる。[Effects of the Invention] As described above, the present invention forms photoelectric conversion element arrays on both sides of a transparent insulating substrate, and also provides light emitting elements on the side surfaces of the transparent insulating substrate so that the light emitted from the light enters into the insulating substrate. With this arrangement, it is possible to obtain a photoelectric conversion device with a large short circuit current, that is, a high output, despite having the same chip area.
【図面の簡単な説明】
第１図は本発明の一実施例を示す断面図、第２図は同上
の平面図、第３図は本発明の異なる実施例を示す平面図
、第４図は従来例を示す断面図である。
１・・・透明絶縁基板、２・・・透明電極、３・・・光
電変接層、４・・・金属電極、５・・・バンシベーショ
ン膜、６・・・発光素子。[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a plan view of the same, FIG. 3 is a plan view showing a different embodiment of the present invention, and FIG. FIG. 2 is a sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1...Transparent insulating substrate, 2...Transparent electrode, 3...Photoelectric conversion layer, 4...Metal electrode, 5...Vancivation film, 6...Light emitting element.
Claims (1)
すると共に、上記透明絶縁基板の側面に発光素子を、そ
の発光が絶縁基板内に入射するように配設して成る光電
変換装置。(1) A photoelectric conversion device comprising photoelectric conversion element arrays formed on both sides of a transparent insulating substrate, and light emitting elements arranged on the side surfaces of the transparent insulating substrate so that the light emitted from the light enters into the insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63061098A JPH01235280A (en) | 1988-03-15 | 1988-03-15 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63061098A JPH01235280A (en) | 1988-03-15 | 1988-03-15 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01235280A true JPH01235280A (en) | 1989-09-20 |
Family
ID=13161268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63061098A Pending JPH01235280A (en) | 1988-03-15 | 1988-03-15 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01235280A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH054525U (en) * | 1991-06-24 | 1993-01-22 | 松下電工株式会社 | Optical coupling structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029293B2 (en) * | 1980-08-06 | 1985-07-10 | 十條製紙株式会社 | Method for removing formaldehyde from microcapsule dispersion |
-
1988
- 1988-03-15 JP JP63061098A patent/JPH01235280A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029293B2 (en) * | 1980-08-06 | 1985-07-10 | 十條製紙株式会社 | Method for removing formaldehyde from microcapsule dispersion |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH054525U (en) * | 1991-06-24 | 1993-01-22 | 松下電工株式会社 | Optical coupling structure |
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