JP2000196113A - Solar battery - Google Patents

Solar battery

Info

Publication number
JP2000196113A
JP2000196113A JP10367251A JP36725198A JP2000196113A JP 2000196113 A JP2000196113 A JP 2000196113A JP 10367251 A JP10367251 A JP 10367251A JP 36725198 A JP36725198 A JP 36725198A JP 2000196113 A JP2000196113 A JP 2000196113A
Authority
JP
Japan
Prior art keywords
light
substrate
transparent electrode
surface side
receiving surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10367251A
Other languages
Japanese (ja)
Inventor
Toshihiro Kinoshita
敏宏 木下
Eiji Maruyama
英治 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP10367251A priority Critical patent/JP2000196113A/en
Publication of JP2000196113A publication Critical patent/JP2000196113A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PROBLEM TO BE SOLVED: To improve the photoelectric conversion efficiency of a solar battery by providing a light scattering function on the rear surface side of a photovoltaic device so that light absorption by a transparent electrode on the light- receiving surface side of the photovoltaic device is reduced. SOLUTION: A solar battery is provided with a light-receiving surface-side substrate body 7, constituted by forming a photovoltaic device 13 composed of an amorphous semiconductor on a light-transmissive substrate 9 and a rear surface-side substrate body 8, which is formed separately from the substrate body 7 and provided on the rear surface side of the device 13, in a state where the body 8 faces opposite to the body 7. Therefore, a solar battery having a light scattering function on the rear surface side of the photovoltaic device 13 can be obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION 【発明の属する技術分野】TECHNICAL FIELD OF THE INVENTION

【0001】本発明は、非晶質半導体の光起電力装置を
備えた太陽電池に関する。
The present invention relates to a solar cell having a photovoltaic device made of an amorphous semiconductor.

【0002】[0002]

【従来の技術】従来、この種の太陽電池においては、高
効率化を図るため、受光面側(表面側)の透明電極(T
CO)が微細な凹凸を有するテクスチャ構造にされる。
2. Description of the Related Art Conventionally, in this type of solar cell, a transparent electrode (T
CO) has a texture structure having fine irregularities.

【0003】このテクスチャ構造の透明電極を有する従
来の太陽電池はほぼ図5に示すように構成され、受光面
側(図5の下側)の透光性の基板1の裏面側に、受光面
側の透明電極2,非晶質半導体の半導体層3,裏面側の
透明電極4が順に積層されて非晶質半導体の光起電力装
置5が形成される。
A conventional solar cell having a transparent electrode having this texture structure is constructed as shown in FIG. 5, and a light-receiving surface is provided on the light-receiving surface side (lower side in FIG. 5) of the light-transmitting substrate 1. The transparent electrode 2 on the side, the semiconductor layer of the amorphous semiconductor, and the transparent electrode 4 on the back side are sequentially laminated to form the amorphous semiconductor photovoltaic device 5.

【0004】そして、半導体層3は具体的にはアモルフ
ァスシリコン系のpin構造の半導体層(a−Si層)
であり、プラズマCVD法で形成される。
The semiconductor layer 3 is specifically a semiconductor layer (a-Si layer) having an amorphous silicon pin structure.
And formed by a plasma CVD method.

【0005】一方、透明電極2,4はそれぞれSn
,ZnO,ITO等の透明導電膜からなり、透明電
極2は光散乱機能による光閉込め効果を発揮するように
半導体層3との境界面がテクスチャ構造に形成される。
On the other hand, the transparent electrodes 2 and 4 are Sn
The transparent electrode 2 is made of a transparent conductive film such as O 2 , ZnO, or ITO. The transparent electrode 2 has a textured structure at the interface with the semiconductor layer 3 so as to exhibit a light confinement effect by a light scattering function.

【0006】また、透明電極4の裏面側には、光起電力
装置5の裏面電極での光反射を増大させるため、例えば
スパッタ法によりAg薄膜等の高反射率の反射金属膜6
が一体に形成される。
On the back side of the transparent electrode 4, in order to increase light reflection on the back electrode of the photovoltaic device 5, for example, a reflective metal film 6 having a high reflectivity such as an Ag thin film is formed by a sputtering method.
Are integrally formed.

【0007】[0007]

【発明が解決しようとする課題】前記図5の従来のこの
種の太陽電池の場合、光起電力装置5の裏面電極側での
反射を増大して光電変換効率を向上するため、透明電極
4に反射金属膜6がスパッタ法等で一体に形成される
が、その時、透明電極4が酸素の欠損等の損傷を受け、
透過率が低下して光電変換効率が却って低下することか
ら、反射金属膜6の形成条件に制限がある。
In the case of the conventional solar cell shown in FIG. 5, the reflection on the back electrode side of the photovoltaic device 5 is increased to improve the photoelectric conversion efficiency. The reflective metal film 6 is formed integrally by a sputtering method or the like. At this time, the transparent electrode 4 is damaged by oxygen deficiency or the like.
Since the transmittance is reduced and the photoelectric conversion efficiency is rather reduced, the conditions for forming the reflective metal film 6 are limited.

【0008】したがって、この種の太陽電池において
は、従来、透明電極2をテクスチャ構造とし、光起電力
装置5の受光面側に光散乱機能をもたせるしかなく、こ
の場合、透明電極2の膜厚はテクスチャ構造にするた
め、7000〜8000Åにもなり、これは、透明電極
4の膜厚500〜1000Åに比して極めて厚く、この
結果、主に800nm以上の長波長の光の大部分が透明電
極2で吸収され、これらの光を有効に利用することがで
きず、光電変換効率の向上を図ることができない問題点
がある。
Therefore, in this type of solar cell, conventionally, the transparent electrode 2 has a texture structure and the light receiving surface side of the photovoltaic device 5 has a light scattering function. Is 7000-8000 [deg.] Due to the texture structure, which is extremely thick compared to the thickness of the transparent electrode 4 of 500-1000 [deg.]. As a result, most of the long wavelength light of 800 nm or more is mainly transparent. There is a problem that the light is absorbed by the electrode 2 and the light cannot be used effectively, and the photoelectric conversion efficiency cannot be improved.

【0009】本発明は、光起電力装置の裏面側に、従来
の透過率の低下等なく、光散乱機能をもたせるようにし
た太陽電池を提供することを課題とし、その結果、光起
電力装置の受光面側の透明電極での光の吸収を低減し得
るようにしてこの種の太陽電池の光電変換効率を向上す
る。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a solar cell having a light scattering function on the back side of a photovoltaic device without a decrease in transmittance in the prior art. Thus, the photoelectric conversion efficiency of this type of solar cell can be improved by reducing the absorption of light by the transparent electrode on the light receiving surface side.

【0010】さらには、複数の光起電力装置を備えた直
列接続の集積型構造の場合に、同様の効果が得られるよ
うにすることも課題とする。
It is another object of the present invention to provide a similar effect in the case of a series-connected integrated structure having a plurality of photovoltaic devices.

【0011】[0011]

【課題を解決するための手段】前記の課題を解決するた
めに、本発明の太陽電池は、透光性の基板に非晶質半導
体の光起電力装置を形成した受光面側の基板体と、この
基板体と別体に形成され,光起電力装置の裏面側に前記
受光面側の基板体に対向して設けられた,光散乱機能を
有する裏面側の基板体とを備える。
In order to solve the above-mentioned problems, a solar cell according to the present invention comprises a light-transmitting substrate having an amorphous semiconductor photovoltaic device formed on a light-transmitting substrate. A substrate on the back side having a light scattering function, which is formed separately from the substrate and is provided on the back side of the photovoltaic device so as to face the substrate on the light receiving surface side.

【0012】したがって、光起電力装置の裏面側に光散
乱機能を有する太陽電池を提供することができる。
Accordingly, a solar cell having a light scattering function on the back side of the photovoltaic device can be provided.

【0013】この場合、従来のように光起電力装置の受
光面側の透明電極をテクスチャ構造にする必要がなく、
この透明電極での光の吸収を少なくすることができ、し
かも、裏面側の透明電極に反射金属膜がスパッタ法等で
一体に形成されるのではなく、光電力装置の表面側に、
別体の裏面側の基板体が対向して設けられる構造である
ため、光起電力装置の表面側の透明電極はスパッタ等に
よる損傷が生じることもない。
In this case, the transparent electrode on the light receiving surface side of the photovoltaic device does not need to have a texture structure as in the prior art.
The absorption of light by the transparent electrode can be reduced, and the reflective metal film is not formed integrally with the transparent electrode on the back side by sputtering or the like, but on the front side of the optical power device,
Since the structure is such that the substrate body on the back side of the separate body is provided to face, the transparent electrode on the front side of the photovoltaic device is not damaged by sputtering or the like.

【0014】そして、光起電力装置は透光性の基板の裏
面に受光面側の透明電極,半導体層,裏面側の透明電極
を積層して形成され、裏面側の基板体は受光面側の基板
体に対向する面にテクスチャ構造の反射金属膜が形成さ
れていることが実用的で好ましい。
The photovoltaic device is formed by laminating a transparent electrode on the light receiving surface side, a semiconductor layer, and a transparent electrode on the rear surface side on the rear surface of a light transmitting substrate, and the substrate on the rear surface side is formed on the light receiving surface side. It is practical and preferable that a reflective metal film having a texture structure is formed on the surface facing the substrate body.

【0015】さらに、受光面側の透明電極及び裏面側の
透明電極を平面状の薄膜にすると、とくに、受光面側の
透明電極膜が従来のテクスチャ構造の場合より極めて薄
くすることができ、この膜での光の吸収が少なくなり、
光電変換効率が著しく向上する。
Further, when the transparent electrode on the light receiving surface side and the transparent electrode on the back surface side are made into a flat thin film, in particular, the transparent electrode film on the light receiving surface side can be made extremely thin as compared with the conventional texture structure. Light absorption by the film is reduced,
The photoelectric conversion efficiency is significantly improved.

【0016】つぎに、受光面側の基板体の透光性の基板
に非晶質半導体の光起電力装置を複数個形成し、直列接
続の集積型構造に形成してもよく、この場合は、複数個
の光起電力装置を直列接続した集積型構造の太陽電池に
ついても、本発明を同様に適用することができる。
Next, a plurality of amorphous semiconductor photovoltaic devices may be formed on the translucent substrate of the substrate body on the light receiving surface side, and may be formed in an integrated type structure connected in series. The present invention can be similarly applied to a solar cell having an integrated structure in which a plurality of photovoltaic devices are connected in series.

【0017】[0017]

【発明の実施の形態】本発明の実施の形態につき、図1
ないし図4を参照して説明する。 (1形態)まず、本発明の実施の1形態につき、図1及
び図2を参照して説明する。この形態の太陽電池は図1
に示すように受光面側(図では下側)の基板体7と,裏
面側(図では上側)の基板体8とからなり、両基板体
7、8は図2の(a),(b)に示すように別々に形成
される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG.
This will be described with reference to FIG. (One Embodiment) First, one embodiment of the present invention will be described with reference to FIGS. This type of solar cell is shown in FIG.
As shown in FIG. 2, a substrate body 7 on the light receiving surface side (the lower side in the figure) and a substrate body 8 on the back side (the upper side in the figure) are provided, and both the substrate bodies 7 and 8 are shown in FIGS. ) Are formed separately.

【0018】図2の(a)は基板体8をその裏面側から
みた斜視図であり、同図の(b)は基板体7をその裏面
側からみた斜視図である。
FIG. 2A is a perspective view of the substrate 8 as viewed from the back side, and FIG. 2B is a perspective view of the substrate 7 as viewed from the back side.

【0019】そして、基板体7はガラス基板からなる支
持基板としての透光性の受光面基板9の裏面に、受光面
側の透明電極10,半導体層11,裏面側の透明電極1
2を積層して光起電力装置13が形成されている。
The substrate 7 is provided on the back surface of a light-transmitting light-receiving surface substrate 9 as a supporting substrate made of a glass substrate, with the transparent electrode 10 on the light-receiving surface side, the semiconductor layer 11, and the transparent electrode 1 on the back side.
2 are stacked to form a photovoltaic device 13.

【0020】ところで、透明電極10,12はスパッタ
装置により形成された耐プラズマ性を有するGZO(G
aをドープしたZnO)等のZnOの薄膜(透明導電
膜)を用いることができる。透明電極10は図5の従来
の透明電極2のようにテクスチャ構造に形成する必要が
ないため、例えば5000Å以下の平面状の薄膜(透明
導電膜)からなり、透明電極12は図5の従来の透明電
極4と同様の500〜1000Åの平面状の薄膜(透明
導電膜)からなる。
Incidentally, the transparent electrodes 10 and 12 are made of GZO (G
A thin film (transparent conductive film) of ZnO such as ZnO doped with a) can be used. Since the transparent electrode 10 does not need to be formed in a textured structure unlike the conventional transparent electrode 2 of FIG. 5, it is made of, for example, a flat thin film (transparent conductive film) of 5000 ° or less. It is made of a 500-1000 ° flat thin film (transparent conductive film) similar to the transparent electrode 4.

【0021】そして、透明電極12の裏面には、電流損
失を低減するため、Agのグリッド電極14が適当な格
子間隔で形成されている。
On the back surface of the transparent electrode 12, Ag grid electrodes 14 are formed at appropriate lattice intervals to reduce current loss.

【0022】また、半導体層11は図5の従来の半導体
層3と同様、プラズマCVD法で形成されたpin構造
のa−Si層である。
The semiconductor layer 11 is a pin-structured a-Si layer formed by a plasma CVD method, similarly to the conventional semiconductor layer 3 of FIG.

【0023】一方、基板体8はガラス基板からなる支持
基板としての透光性の裏面基板15の表面に、スパッタ
装置により透明電極16,Agの反射金属膜17を積層
して形成される。
On the other hand, the substrate body 8 is formed by laminating a transparent electrode 16 and a reflective metal film 17 of Ag on a surface of a translucent rear substrate 15 as a support substrate made of a glass substrate by a sputtering apparatus.

【0024】このとき、透明電極16は形成条件を制御
することにより、或いは機械的研磨・エッチング等によ
って表面が微細な凹凸形状に加工され、その表面に形成
された反射金属膜17の薄膜は透明電極16の表面形状
にしたがったテクスチャ構造に形成される。
At this time, the surface of the transparent electrode 16 is processed into fine irregularities by controlling the forming conditions or by mechanical polishing or etching, and the thin film of the reflective metal film 17 formed on the surface is transparent. A texture structure is formed according to the surface shape of the electrode 16.

【0025】そのため、基板体8の基板体7に対向する
面に、テクスチャ構造の反射金属膜17が形成され、こ
の反射金属膜17は光反射機能及び光散乱機能を有す
る。
Therefore, a reflective metal film 17 having a texture structure is formed on the surface of the substrate 8 facing the substrate 7, and this reflective metal film 17 has a light reflecting function and a light scattering function.

【0026】そして、別々に形成された基板体7,8
は、光起電力装置13の裏面側に基板体8が位置するよ
うに、対向して設けられ、これにより太陽電池のモジュ
ールが完成する。
Then, the separately formed substrate bodies 7, 8
Are provided to face each other such that the substrate body 8 is located on the back surface side of the photovoltaic device 13, thereby completing the solar cell module.

【0027】このとき、反射金属膜17を集電極に兼用
するため、基板体8は透明電極12の裏面のグリット電
極14に反射金属膜17が接触(接合)するように設け
られる。
At this time, the substrate 8 is provided so that the reflective metal film 17 contacts (joins) the grid electrode 14 on the back surface of the transparent electrode 12 in order to use the reflective metal film 17 also as a collecting electrode.

【0028】具体的には、例えば基板体7,8をモジュ
ールのフレーム(枠体)に支持したり、透明電極12の
表面周部と反射金属膜17の表面周部とを半田付けした
りして、反射金属膜17がグリット電極14に接するよ
うに基板体7,8が接合される。
More specifically, for example, the substrates 7 and 8 are supported on a module frame, or the surface periphery of the transparent electrode 12 and the surface periphery of the reflective metal film 17 are soldered. Then, the substrates 7 and 8 are joined so that the reflective metal film 17 is in contact with the grid electrode 14.

【0029】また、基板体7,8の間隙,すなわち透明
電極12と反射金属膜17との間隙には、通常は、EV
A(Ethylene Vinyl Acetate),PVB(Poly Vinyl B
utylol)等の透光性の樹脂が充填されるが、その間の光
の損失を低減するため、樹脂を充填したりすることな
く、空間としておいてもよい。
The gap between the substrates 7 and 8, that is, the gap between the transparent electrode 12 and the reflective metal film 17 is usually provided with an EV.
A (Ethylene Vinyl Acetate), PVB (Poly Vinyl B)
Although a translucent resin such as utylol) is filled, the space may be left without filling with a resin in order to reduce light loss during that time.

【0030】以上のようにして形成された本形態の太陽
電池の場合、光起電力装置13の裏面側の反射金属膜1
7によって光散乱機能が形成されるため、光起電力装置
13の受光面側の透明電極10は、テクスチャ構造に形
成されず、平面状の薄膜に形成され、透明電極膜10で
の光の吸収が減少し、特に長波長の光に対する光電変換
効率等が改善される。
In the case of the solar cell of the present embodiment formed as described above, the reflective metal film 1 on the back side of the photovoltaic device 13
7, the light scattering function is formed, so that the transparent electrode 10 on the light receiving surface side of the photovoltaic device 13 is not formed in a texture structure, but is formed in a flat thin film, and the transparent electrode film 10 absorbs light. And, in particular, the photoelectric conversion efficiency for long wavelength light is improved.

【0031】また、反射金属膜17は光起電力装置13
の透明電極膜12に機械的(物理的)に接合し、図5の
従来電池の反射金属膜6のようにスパッタ装置で透明電
極膜4に一体に形成されるものでないため、反射金属膜
17の形成条件に制限がなく、反射金属膜17をテクス
チャ構造に形成しても、透明電極膜12の酸素の欠損等
がなく、その透過率の低下等を生じることもない。した
がって、太陽電池の光電変換効率が従来より著しく向上
する。
The reflection metal film 17 is formed on the photovoltaic device 13.
5 is mechanically (physically) bonded to the transparent electrode film 12 and is not formed integrally with the transparent electrode film 4 by a sputtering device unlike the reflective metal film 6 of the conventional battery shown in FIG. There is no limitation on the formation conditions, and even if the reflective metal film 17 is formed in a textured structure, there is no loss of oxygen in the transparent electrode film 12 and the transmittance does not decrease. Therefore, the photoelectric conversion efficiency of the solar cell is remarkably improved as compared with the related art.

【0032】ところで、前記形態では反射金属膜17を
集電極として利用し、反射金属膜17から電気を取出す
ため、グリッド電極14を介して基板体7、8を接合し
たが、受光面積が小さい場合等の集電極が不要な場合
は、グリッド電極14を省き、透明電極12から電気を
取出すようにしてもよく、この場合、反射金属膜17は
透明電極12との間に隙間を有するように設けられてい
てもよい。
In the above-described embodiment, the substrates 7 and 8 are joined via the grid electrode 14 in order to extract electricity from the reflective metal film 17 by using the reflective metal film 17 as a collecting electrode. When the collector electrode is not required, the grid electrode 14 may be omitted, and electricity may be extracted from the transparent electrode 12. In this case, the reflective metal film 17 is provided so as to have a gap between the reflective metal film 17 and the transparent electrode 12. It may be.

【0033】(他の形態)つぎに、本発明の実施の他の
形態につき、図3及び図4を参照して説明する。それら
の図面において、符号にダッシュ(’)を付したもの
は、図1及び図2の同一の符号のものと、同一又は相当
するものを示し、図3は太陽電池の構成の説明図であ
り、図4の(a),(b)はその裏面側の基板体8’,
受光面側の基板体7’をそれぞれ裏面側からみた斜視図
である。
Next, another embodiment of the present invention will be described with reference to FIGS. In these drawings, those with a dash (') attached to the reference numerals indicate the same or corresponding parts as those of the same reference numerals in FIGS. 1 and 2, and FIG. 3 is an explanatory view of the configuration of the solar cell. 4 (a) and 4 (b) show the substrate body 8 'on the back side thereof.
It is the perspective view which looked at the board | substrate 7 'of the light-receiving surface side from the back surface side, respectively.

【0034】そして、この形態においては、基板体7’
の透光性の受光面基板9’に、それぞれ受光面側の透明
電極10’,半導体層11’,裏面側の透明電極12’
からなる複数の光起電力装置13’を形成し、直列接続
の集積構造に形成する。
In this embodiment, the substrate 7 '
The transparent electrode 10 'on the light receiving surface side, the semiconductor layer 11', and the transparent electrode 12 'on the rear surface side
Are formed to form a series-connected integrated structure.

【0035】具体的には、レーザーパターニング方式で
形成する場合、まず、基板9’上にスパッタ装置で耐プ
ラズマ性を有するZGO等のZnOの平面状の透明電極
膜を形成し、レーザーパターニングによりこの膜を加工
して各透明電極10’を形成する。
Specifically, in the case of forming by a laser patterning method, first, a planar transparent electrode film of ZnO such as ZGO having plasma resistance is formed on a substrate 9 ′ by a sputtering device, and this is patterned by laser patterning. The film is processed to form each transparent electrode 10 '.

【0036】つぎに、それらの表面上にプラズマCVD
法によりpin構造のa−Si層を堆積し、レーザ光で
各半導体層11’に分離する。
Next, plasma CVD was performed on those surfaces.
An a-Si layer having a pin structure is deposited by a method, and separated into respective semiconductor layers 11 'by laser light.

【0037】さらに、各半導体層11’の表面上にZn
Oの平面状の透明電極膜を形成し、この膜と分離された
各a−Si層とをレーザーパターニングにより加工して
各半導体層11’及びその裏面側の各透明電極12’を
形成し、集積化構造の各光起電力装置13’を形成す
る。
Further, Zn is deposited on the surface of each semiconductor layer 11 '.
Forming a flat transparent electrode film of O, processing this film and each separated a-Si layer by laser patterning to form each semiconductor layer 11 'and each transparent electrode 12' on the back side thereof, Each integrated photovoltaic device 13 'is formed.

【0038】なお、レーザーパターニング方式の代わり
に、メタルマスク方式又はフォトリソグラフィ方式を用
いて各光起電力装置13’を形成してもよい。
The photovoltaic devices 13 'may be formed by using a metal mask method or a photolithography method instead of the laser patterning method.

【0039】また、この集積化構造の場合、各光起電力
装置13’は受光面積が小さく、個々の損失は少なく、
しかも、各透明電極12の短絡を防止する必要もあるた
め、前記1形態のグリッド電極14に相当する電極は設
けられない。
Also, in the case of this integrated structure, each photovoltaic device 13 'has a small light receiving area and a small individual loss.
Moreover, since it is necessary to prevent short-circuiting of each transparent electrode 12, an electrode corresponding to the grid electrode 14 of the above-described one form is not provided.

【0040】一方、基板体8’については、1形態の基
板体8と同様、透光性の裏面基板13’の表面側に透明
電極16’を介してテスクチャ構造の反射金属膜17’
を形成する。
On the other hand, as for the substrate body 8 ', as in the case of the substrate body 8 of one embodiment, a reflective metal film 17' having a texture structure is provided on the front surface side of the translucent rear substrate 13 'via the transparent electrode 16'.
To form

【0041】そして、基板体7’の各光起電力13’の
表面側に、基板体8を間隙を設けて対向させ、図3の集
積型構造の太陽電池を形成する。
Then, the substrate body 8 is opposed to the surface side of each photovoltaic voltage 13 'of the substrate body 7' with a gap provided therebetween, thereby forming a solar cell having an integrated structure shown in FIG.

【0042】そして、基板体7’,8’の間隙は、通常
はEVA,PVB等の透光性の樹脂が充填されるが、そ
のまま空間としておいてもよい。
The gap between the substrates 7 'and 8' is usually filled with a translucent resin such as EVA or PVB, but may be left as a space.

【0043】そして、この形態の場合も反射金属膜1
7’によって光散乱機能が形成されるため、各光起電力
13’の受光面側の透明電極10’はテクスチャ構造に
形成されず、1形態と同様の効果が得られる。
In this case, the reflective metal film 1 is also used.
Since the light scattering function is formed by 7 ', the transparent electrode 10' on the light receiving surface side of each photovoltaic voltage 13 'is not formed in a texture structure, and the same effect as in the first embodiment can be obtained.

【0044】ところで、各光起電力装置13’の上部に
2段目,3段目,…の各光起電力装置を積層形成し、発
電部を多段に形成した場合にも、本発明を同様に適用す
ることができるのは勿論である。
By the way, the present invention is similarly applied to the case where the photovoltaic devices of the second stage, the third stage,... Of course.

【0045】また、前記1形態,他の形態の太陽電池を
実施例1,実施例2の太陽電池それぞれとし、図5の従
来電池とのモジュール出力を比較したところ、光起電力
装置3,13,13’が形成する発電部の総面積をそれ
ぞれ30cm×40cmとした場合、従来電池のモジュール
出力は11Wであったが、実施例1,実施例2の太陽電
池のモジュール出力は11.2W,11.5Wになり、
それぞれ従来電池より増大することが確かめられた。
The solar cell of the first embodiment and the solar cell of the other embodiment were used as the solar cells of Examples 1 and 2, respectively, and the module output of the conventional cell of FIG. , 13 ′, the module output of the conventional battery was 11W, but the module output of the solar cells of Examples 1 and 2 was 11.2W, 11.5W
It was confirmed that each of them increased from the conventional battery.

【0046】そして、透明電極10,10’,12,1
2’反射金属膜17,17’等の膜厚,光起電力装置1
3,13’の半導体等は前記両実施の形態のものに限ら
れるものではなく、非晶質半導体の種々の太陽電池に本
発明を適用することができる。
Then, the transparent electrodes 10, 10 ', 12, 1
Film thickness of 2 ′ reflective metal film 17, 17 ′, etc., photovoltaic device 1
The semiconductors 3 and 13 'are not limited to those in the above-mentioned embodiments, and the present invention can be applied to various solar cells made of an amorphous semiconductor.

【0047】[0047]

【発明の効果】本発明は、以下に記載する効果を奏す
る。まず、透光性の基板9,9’に非晶質半導体の光起
電力装置13,13’を形成した受光面側の基板体7,
7’と、この基板体7,7’と別体に形成され,光起電
力装置13,13’の裏面側に基板体7,7’に対向し
て設けられた,光散乱機能を有する裏面側の基板体8,
8’とを備えたため、光起電力装置13,13’の裏面
側に光散乱機能を有する太陽電池を提供することができ
る。
The present invention has the following effects. First, the substrate 7 on the light receiving surface side in which the amorphous semiconductor photovoltaic devices 13 and 13 'are formed on the translucent substrates 9 and 9',
7 'and a back surface having a light scattering function, which is formed separately from the substrate bodies 7 and 7' and provided on the back side of the photovoltaic devices 13 and 13 'so as to face the substrate bodies 7 and 7'. Side substrate body 8,
8 ′, it is possible to provide a solar cell having a light scattering function on the back side of the photovoltaic devices 13 and 13 ′.

【0048】この場合、光起電力装置13,13’の受
光面側の透明電極10,10’に光散乱機能をもたせる
必要がなく、しかも、光起電力装置13,13’の表面
側に、別体の裏面側の基板体8,8’が対向して設けら
れる構造であるため、光起電力装置13,13’の表面
側の透明電極12,12’にスパッタ等による損傷が生
じることもなく、光散乱機能の付加による透過率の低下
等を防止し、光電変換効率を向上することができる。
In this case, it is not necessary to provide the transparent electrodes 10, 10 'on the light receiving surface side of the photovoltaic devices 13, 13' with a light scattering function. Since the separate substrates 8 and 8 'on the back side are provided to face each other, the transparent electrodes 12 and 12' on the front side of the photovoltaic devices 13 and 13 'may be damaged by sputtering or the like. In addition, it is possible to prevent a decrease in transmittance due to the addition of a light scattering function, and to improve photoelectric conversion efficiency.

【0049】そして、光起電力装置13,13’は透光
性の基板9,9’の裏面に受光面側の透明電極10,1
0’,半導体層11,11’,裏面側の透明電極12,
12’を積層して形成されることが好ましく、裏面側の
基板体8,8’は受光面側の基板体7,7’に対向する
面にテクスチャ構造の反射金属膜17,17’が形成さ
れていることが実用的で好ましい。
The photovoltaic devices 13 and 13 ′ are provided on the back surfaces of the transparent substrates 9 and 9 ′ with the transparent electrodes 10 and 1 on the light receiving surface side.
0 ′, semiconductor layers 11, 11 ′, transparent electrode 12 on the back side,
It is preferable that the reflective metal films 17 and 17 ′ having a texture structure are formed on the surfaces of the substrate members 8 and 8 ′ on the back surface facing the substrate members 7 and 7 ′ on the light receiving surface side. It is practical and preferable.

【0050】その際、受光面側の透明電極10,10’
及び裏面側の透明電極12,12’を平面状の薄膜にす
ると、とくに、受光面側の透明電極10,10’が従来
のテクスチャ構造の場合より極めて薄くなり、この電極
10,10’での光の吸収が少なくなり、光電変換効率
を著しく向上することができる。
At this time, the transparent electrodes 10, 10 'on the light receiving surface side
If the transparent electrodes 12 and 12 'on the back side are made into a flat thin film, the transparent electrodes 10 and 10' on the light receiving side are particularly thinner than those of the conventional texture structure. Light absorption is reduced, and the photoelectric conversion efficiency can be significantly improved.

【0051】つぎに、受光面側の基板体7’の透光性の
基板9’に非晶質半導体の光起電力装置13’を複数個
形成し、直列接続の集積型構造に形成してもよく、この
場合は、複数個の光起電力装置を直列接続した集積型構
造の太陽電池について本発明を同様に適用することがで
きる。
Next, a plurality of amorphous semiconductor photovoltaic devices 13 'are formed on the light-transmitting substrate 9' of the substrate body 7 'on the light-receiving surface side, and formed in a series-connected integrated structure. In this case, the present invention can be similarly applied to a solar cell having an integrated structure in which a plurality of photovoltaic devices are connected in series.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の1形態の太陽電池の構成図であ
る。
FIG. 1 is a configuration diagram of a solar cell according to one embodiment of the present invention.

【図2】(a)は図1の裏面側の基板体の斜視図であ
り、(b)は図1の受光面側の基板体の斜視図である。
2A is a perspective view of a substrate body on the back surface side in FIG. 1, and FIG. 2B is a perspective view of the substrate body on the light receiving surface side in FIG.

【図3】本発明の実施の他の形態の太陽電池の構成図で
ある。
FIG. 3 is a configuration diagram of a solar cell according to another embodiment of the present invention.

【図4】(a)は図3の裏面側の基板体の斜視図であ
り、(b)は図3の受光面側の基板体の斜視図である。
4A is a perspective view of the substrate body on the back surface side in FIG. 3, and FIG. 4B is a perspective view of the substrate body on the light receiving surface side in FIG.

【図5】従来電池の構成図である。FIG. 5 is a configuration diagram of a conventional battery.

【符号の説明】[Explanation of symbols]

7,7’ 受光面側の基板体 8,8’ 裏面側の基板体 9,9’ 受光面側の透光性の基板 10,10’ 受光面側の透明電極 11,11’ 半導体層 12,12’ 裏面側の透明電極 13,13’ 光起電力装置 15,15’ 裏面側の透光性の基板 17,17’ 反射金属膜 7, 7 'Substrate body on light receiving surface side 8, 8' Substrate body on back surface 9, 9 'Transparent substrate on light receiving surface side 10, 10' Transparent electrode on light receiving surface side 11, 11 'Semiconductor layer 12, 12 'Transparent electrode on back side 13, 13' Photovoltaic device 15, 15 'Transparent substrate on back side 17, 17' Reflective metal film

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 透光性の基板に非晶質半導体の光起電力
装置を形成した受光面側の基板体と、 前記受光面側の基板体と別体に形成され,前記光起電力
装置の裏面側に前記受光面側の基板体に対向して設けら
れた,光散乱機能を有する裏面側の基板体とを備えたこ
とを特徴とする太陽電池。
1. A light-receiving-side substrate body in which an amorphous semiconductor photovoltaic device is formed on a light-transmitting substrate; and the photovoltaic device formed separately from the light-receiving surface side substrate body. And a backside substrate having a light-scattering function, provided on the backside of the device and facing the substrate on the light-receiving side.
【請求項2】 光起電力装置は透光性の基板の裏面に受
光面側の透明電極,半導体層,裏面側の透明電極を積層
して形成され、裏面側の基板体は前記受光面側の基板体
に対向する面にテクスチャ構造の反射金属膜が形成され
ていることを特徴とする請求項1記載の太陽電池。
2. A photovoltaic device is formed by laminating a transparent electrode on the light receiving surface side, a semiconductor layer, and a transparent electrode on the rear surface side on the back surface of a translucent substrate. The solar cell according to claim 1, wherein a reflective metal film having a texture structure is formed on a surface facing the substrate body.
【請求項3】 受光面側の透明電極及び裏面側の透明電
極が平面状の薄膜であることを特徴とする請求項2記載
の太陽電池。
3. The solar cell according to claim 2, wherein the transparent electrode on the light receiving surface side and the transparent electrode on the back side are flat thin films.
【請求項4】 受光面側の基板体の透光性の基板に非晶
質半導体の光起電力装置が複数個形成され、直列接続の
集積型構造に形成されたことを特徴とする請求項1,請
求項2又は請求項3記載の太陽電池。
4. A plurality of amorphous semiconductor photovoltaic devices are formed on a light-transmitting substrate of the substrate on the light-receiving surface side, and are formed in an integrated type structure connected in series. The solar cell according to claim 1, 2 or 3.
JP10367251A 1998-12-24 1998-12-24 Solar battery Pending JP2000196113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10367251A JP2000196113A (en) 1998-12-24 1998-12-24 Solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10367251A JP2000196113A (en) 1998-12-24 1998-12-24 Solar battery

Publications (1)

Publication Number Publication Date
JP2000196113A true JP2000196113A (en) 2000-07-14

Family

ID=18488855

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004297008A (en) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology P-type semiconductor material, its manufacturing method, its manufacturing device, photoelectric conversion element, light emitting device, and thin film transistor
JP2008034686A (en) * 2006-07-31 2008-02-14 Toppan Printing Co Ltd Photoelectric conversion device and manufacturing method thereof
JP2012059886A (en) * 2010-09-08 2012-03-22 Mitsubishi Heavy Ind Ltd Photoelectric conversion device
WO2013051519A1 (en) * 2011-10-04 2013-04-11 旭硝子株式会社 Thin film solar cell module and method for manufacturing thin film solar cell module
JP2013258289A (en) * 2012-06-13 2013-12-26 Mitsubishi Materials Corp Laminate for thin film solar cell, and method for manufacturing thin film solar cell including the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004297008A (en) * 2003-03-28 2004-10-21 National Institute Of Advanced Industrial & Technology P-type semiconductor material, its manufacturing method, its manufacturing device, photoelectric conversion element, light emitting device, and thin film transistor
JP2008034686A (en) * 2006-07-31 2008-02-14 Toppan Printing Co Ltd Photoelectric conversion device and manufacturing method thereof
JP2012059886A (en) * 2010-09-08 2012-03-22 Mitsubishi Heavy Ind Ltd Photoelectric conversion device
WO2013051519A1 (en) * 2011-10-04 2013-04-11 旭硝子株式会社 Thin film solar cell module and method for manufacturing thin film solar cell module
JP2013258289A (en) * 2012-06-13 2013-12-26 Mitsubishi Materials Corp Laminate for thin film solar cell, and method for manufacturing thin film solar cell including the same

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