JP2008034686A - Photoelectric conversion device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectiric conversion device using a flexible film which is so excellent in scattering of light (a light confining effect within the photoelectiric conversion device) to be efficient in photoelectiric conversion as a base material, by making an uneven surface (texture structure) minute, dense and homogeneous. <P>SOLUTION: The photoelectiric conversion device having at least a transparent electrode 8, a photoelectiric conversion layer 3 and a rear surface electrode 7 has a structure having a texture layer which has the texture structure in its front surface and which is made of a silicone resin between an incident-side transparent electrode 2 and the photoelectiric conversion layer 3. Furthermore, on the side of the incident surface of the transparent electrode 8, a structure is provided having an anti-glaring fine uneven pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

The present invention relates to a photoelectric conversion element such as an optical sensor and a solar battery.

Photoelectric conversion elements having a photoelectric conversion layer such as solar cells and optical sensors using single crystal silicon or polycrystalline silicon films have been put into practical use.
A photoelectric conversion element having a photoelectric conversion layer using a polycrystalline silicon film uses a polycrystalline silicon film formed by CVD, and at least one PIN junction is formed.

As a structure of the photoelectric conversion element, a structure having at least a back electrode that reflects incident light, a photoelectric conversion layer, and a transparent electrode on the surface of a substrate is widely used.

Furthermore, a method of making the surface of any one of the back electrode, the photoelectric conversion layer, the transparent electrode, or the plurality of layers into an uneven shape (texture structure) is widely used.
The concavo-convex shape (texture structure) has a function of making incident light or reflected light easily absorbed by the photoelectric conversion layer and increasing the photoelectric conversion efficiency.

For example, in the case of a single crystal silicon solar cell, the uneven shape (texture structure) is formed by etching a single crystal silicon substrate.

Specifically, a mixed solution is generated by adding isopropyl alcohol to a heated aqueous solution of sodium hydroxide (NaOH) or potassium hydroxide (KOH), and a Si (100) wafer is immersed in the mixed solution. Thus, a quadrangular pyramid-shaped protrusion-shaped unevenness (texture structure) can be formed on the Si (100) wafer surface.

Also disclosed is a method of forming an uneven shape (texture structure) on the surface of a single crystal silicon substrate by using an aqueous solution of sodium carbonate (Na ₂ CO ₃ ) as an etchant and immersing the single crystal silicon substrate in the etchant. Yes. (See Patent Document 1)

In the case of a solar cell in which the photoelectric conversion layer is composed of a polycrystalline silicon film or the like, a flexible organic film is used as a substrate, and aluminum containing 0.1 to 6.0% by weight of silicon is used as a target. A method of forming a back electrode (lower electrode) having an uneven shape (texture structure) by sputtering at a substrate temperature of 50 ° C. to 200 ° C. is disclosed. (See Patent Document 2)

In addition, by coating a metal substrate with a heat-resistant resin having electrical insulating properties mixed with pigments such as titanium oxide, alumina, and silica, an uneven shape with a surface roughness (Rmax) of 0.3 to 1.5 μm ( A method of forming a substrate having a texture structure is disclosed. (See Patent Document 3)

Moreover, when forming tin oxide or the like as a conductive film on a glass substrate, a method of controlling the particle diameter of tin oxide or the like while adjusting the film forming conditions to impart an uneven shape (texture structure) to the transparent electrode layer Is disclosed. (See Patent Document 4)

JP 2000-183378 A Japanese Patent Laid-Open No. 9-69642 Japanese Patent Laid-Open No. 11-177111 JP 2000-301419 A

The conventional uneven shape (texture structure) on the transparent electrode and back electrode surfaces has no regularity, and the shape is randomly formed.
Therefore, the density of the texture structure on the electrode surface varies, light scattering (light confinement effect in the photoelectric conversion element) is not sufficient, and photoelectric conversion efficiency is insufficient.

The problem of the present invention is that the unevenness shape (texture structure) is made dense and dense and homogeneous, so that the photoelectric conversion efficiency excellent in light scattering (light confinement effect in the photoelectric conversion element) is high.
It aims at providing the photoelectric conversion element which used the film which has flexibility as a base material.

The invention according to claim 1 is a photoelectric conversion element having at least a transparent electrode, a photoelectric conversion layer, and a back electrode,
The photoelectric conversion element is characterized in that the transparent electrode has an insulating layer made of a silicone resin molded article having a fine concavo-convex pattern and a transparent conductive film formed on the fine concavo-convex pattern.

By adopting such a configuration, it is possible to form a high-density, dense, and uniform uneven shape (texture structure) on the transparent electrode surface, and to scatter light in multiple directions, improving photoelectric conversion efficiency. can do.

The invention according to claim 2 is characterized in that the silicone resin molded article contains a polyorganosilsesquioxane having a cage structure containing 10% by weight or more of an unsaturated compound capable of radical copolymerization. It is a photoelectric conversion element of Claim 1.

By doing in this way, the transparent electrode with high heat resistance, little coloring, a low thermal expansion coefficient, and excellent transparency can be obtained.

The invention according to claim 3 is the photoelectric conversion element according to claim 1 or 2, wherein the silicone resin molded product is a molded product in which a glass cloth is impregnated with a silicone resin and cured. is there.

By doing in this way, the intensity | strength of a silicone resin can be raised and a thermal expansion coefficient can be suppressed.

The invention according to claim 4 is characterized in that the silicone resin molded article has an anti-glare fine uneven pattern on the surface opposite to the surface on which the transparent conductive film is formed. It is a photoelectric conversion element as described in any one of these.

By doing in this way, surface reflection of an entrance plane can be suppressed.

The invention according to claim 5 is the photoelectric conversion element according to any one of claims 1 to 4, wherein the silicone resin is an ionizing radiation curable silicone resin.

By doing so, the pattern transfer from the original plate to the silicone resin can be performed at a low temperature, and the silicone resin can be cured with high accuracy and at a high speed (compared to thermosetting).

According to a sixth aspect of the present invention, the back electrode is a light reflective electrode in which a retroreflective sheet is bonded to a transparent electrode film, according to any one of the first to fifth aspects. It is a photoelectric conversion element of description.

By doing in this way, the reflected light on total reflection conditions can be used and the light absorption of a metal reflecting plate can be suppressed.
Moreover, since the concave and convex shape (texture structure) is attached to the incident side transparent electrode, it is not necessary to provide a light scattering structure to the reflective electrode.
(Excessive scattering may have adverse effects)

The invention according to claim 7 is characterized in that the fine concavo-convex pattern is a fine concavo-convex pattern having a height of 30 nm to 1100 nm and a pitch of 30 nm to 1100 nm. It is a photoelectric conversion element as described in above.

In the transparent electrode, backscattering of incident light becomes a loss.
Further, in order to make the photoelectric conversion element easily absorb incident light, it is necessary to improve the forward scattering property, and it is desirable to have an uneven shape (texture structure) in a range where Mie scattering occurs.
For solar cells, the required wavelength band of light is 300 nm to 1100 nm, and the conditions under which Mie scattering occurs are that the height of the unevenness and the width of the unevenness are about 1/10 of the wavelength.

The invention according to claim 8 is the photoelectric conversion element according to any one of claims 1 to 7, wherein the photoelectric conversion element is a solar cell.

By doing so, high efficiency of the solar cell can be expected.

The invention according to claim 9 is the photoelectric conversion element according to any one of claims 1 to 8, wherein the photoelectric conversion element is an optical sensor.

In this way, high sensitivity of the optical sensor can be expected.

Invention of Claim 10 is a manufacturing method of the photoelectric conversion element as described in any one of Claim 1 thru | or 9, Comprising:
A method for producing a photoelectric conversion element, comprising: pressing a master having a predetermined surface shape onto the silicone resin, and transferring the fine uneven pattern onto the silicone resin.

By doing in this way, the uneven | corrugated shape (texture structure) with high density and precise | minute and homogeneous can be formed in the transparent electrode surface.

Invention of Claim 11 is a manufacturing method of the photoelectric conversion element as described in any one of Claim 1 thru | or 9, Comprising:
At least, an uncured silicone resin and a base film are laminated in this order on the concavo-convex forming surface of the original plate having a predetermined surface shape, and the uncured silicone resin is cured by heat or ionizing radiation, and thereafter Removing the original plate and forming an uneven pattern on the silicone resin;
Forming the transparent conductive film on the concavo-convex pattern;
Forming the photoelectric conversion layer on the transparent conductive film;
A method for producing a photoelectric conversion element comprising the step of laminating the back electrode on the photoelectric conversion layer.

By doing in this way, the photoelectric conversion element which has high photoelectric conversion efficiency can be manufactured with an easy manufacturing process.

The invention described in claim 12 is characterized in that the heat resistance temperature of the base film is 100 ° C. or higher, and the surface of the base film that contacts the silicone resin has an antiglare shape. It is a manufacturing method of a photoelectric conversion element.

Since the curing time can be shortened by increasing the curing temperature condition of the silicone resin, the process time can be shortened if the substrate film is made of a heat-resistant substrate (for example, polyethylene terephthalate, polycarbonate, polyethylene naphthalate, etc.). Further, by making the silicone surface antiglare, light reflection can be reduced, and a photoelectric conversion element having high photoelectric conversion efficiency can be obtained by an easy manufacturing process.

ADVANTAGE OF THE INVENTION According to this invention, the photoelectric conversion element using the film which has the photoelectric conversion efficiency excellent in the scattering of light (the light confinement effect in a photoelectric conversion element) and high as a base material can be obtained.

FIG. 1 shows a partial cross-sectional view of the photoelectric conversion element of the present invention.
The photoelectric conversion element has an adhesive layer 5, a transparent conductive film 4, a photoelectric conversion layer 3, a transparent conductive film 2, and a transparent substrate 1 in this order on the light reflection layer 6.
The back electrode 7 is composed of the light reflecting layer 5, the adhesive layer 4, and the transparent conductive film 3, and the light incident side transparent electrode 8 is composed of the transparent substrate 1 and the transparent conductive film 2.
Although not shown, it is preferable to provide a barrier layer between at least the transparent substrate 1 and the transparent conductive film 2 of the photoelectric conversion element shown in order to suppress mechanical damage, oxidation, corrosion, etc. of the photoelectric conversion element. .

FIG. 1 shows a solar battery cell, and the solar battery is usually configured such that a plurality of cells are connected in series.
In that case, a collection electrode and a wiring electrode are provided on the transparent electrode of each cell.
The collecting electrode is an electrode for collecting the electric power generated in each cell from the transparent electrode surface having a relatively high specific resistance.
The wiring electrode is an electrode for connecting the collection electrode of each cell and the reflection electrode of the adjacent cell.
Further, positive and negative lead electrodes are respectively provided at both ends of the series connection of the cells.

In the photoelectric conversion element of the present invention, light incident from the outside passes through the transparent electrode, is scattered forward by the texture structure, and reaches the surface of the photoelectric conversion layer.
The light that reaches the surface of the photoelectric conversion layer enters the photoelectric conversion layer or is reflected by the surface of the photoelectric conversion layer.
Then, the light reflected on the surface of the photoelectric conversion layer is incident on the other surface of the texture structure on the surface of the photoelectric conversion layer and absorbed.
On the other hand, of the light that has entered the photoelectric conversion layer, the light that has not been absorbed by the photoelectric conversion layer and has reached the surface of the back electrode is reflected by the surface of the back electrode and is incident on the photoelectric conversion layer again.
Further, of the light reflected by the back electrode and re-entering the photoelectric conversion layer, the light reaching the surface of the photoelectric conversion layer without being absorbed by the photoelectric conversion layer is reflected again by the uneven surface of the photoelectric conversion layer, Incident to the conversion layer.
Thus, the light that has entered the photoelectric conversion layer is repeatedly reflected, so that the optical path that travels through the photoelectric conversion layer becomes longer, the light is efficiently absorbed by the photoelectric conversion layer, and the photoelectric conversion efficiency of the solar cell is increased.

Hereinafter, the structure of each part of the photoelectric conversion element of the present invention and the manufacturing method will be described using a solar cell as an example.
The solar cell which is the photoelectric conversion element of the present invention has a configuration having a transparent substrate 1, a transparent conductive film 2, a photoelectric conversion layer 3, and a back electrode 7.

The transparent substrate has a wide range of transparency from the ultraviolet region to the infrared region, has flexibility, has heat resistance (about 250 ° C.) against heat during the formation of the transparent conductive film and the photoelectric conversion layer, and is outdoors. It is possible to use a plastic having weather resistance for use in.
By using plastic, it is possible to adopt a roll-to-roll manufacturing process, and the production speed can be greatly increased.

The fine concavo-convex pattern on the substrate surface is obtained by applying a liquid uncured silicone resin to an original plate having a fine concavo-convex pattern, laminating the film base material, curing the uncured silicone resin with heat pressing or ultraviolet rays, and peeling the original plate. It can be formed by transferring the concavo-convex pattern to the silicone resin.
In this method, first, an original plate for transferring a fine uneven pattern is prepared.
As a method for forming a fine uneven pattern on the surface of the original plate, a method of directly cutting a metal plate or a method of patterning a resist using laser or electron beam drawing and then forming a nickel original plate by nickel electroforming is used. be able to.
Moreover, what transferred UV resin etc. on the film from the said nickel original plate may be used as a film original plate.

FIG. 2 shows a partial cross-sectional view of the transparent substrate 1.
An antiglare pattern 35 is formed on the incident side surface of the transparent substrate, and a structure 36 having a light confinement function (scattering) is formed on one transparent electrode side.
The unevenness height H and pitch P of the structure 36 are all smaller than the wavelength, but since the wavelength band of light is wide, the wavelength band is divided into several types, optically designed, and the arrangement thereof is about 2 to 5 types. As shown in FIG.
For example, a cell corresponding to 300 to 500 nm light, a cell corresponding to 500 to 700 nm light, a cell corresponding to 700 to 900 nm light, a cell 12 corresponding to 900 to 1100 nm light, and one cell of 50 μm to 100 μm square By doing so, it is possible to easily obtain a product that can change the existence ratio of each cell and cope with the difference in the spectral distribution of the sun in each region of the world.

As transparent substrates (films) having heat resistance, transparent polyimide films, fluororesin films, high heat-resistant polycarbonate films, etc. are in the development stage or partially on the market. To achieve this, it is necessary to press at a temperature of 100 to 150 ° C. or more from the heat resistant temperature, which is not realistic.
Therefore, if you use a silicone resin that has thermosetting properties, excellent heat resistance, transparency, and flexibility, you can follow the detailed shape of irregularities (since the uncured silicone resin is liquid) Uneven shape transfer is possible at low temperatures.
However, in general, a silicone resin has a hardened product having a low hardness and is rubbery, and has a large thermal expansion coefficient.
Accordingly, the silicone composition is preferably the one described in claim 2, and further, as a method of increasing the hardness, lowering the thermal expansion coefficient and increasing the rigidity, a silicone resin molded article impregnated with a silicone resin with a glass cloth. It is good to use.

4 and 5 show an overall side view of a transparent substrate manufacturing apparatus provided with a fine concavo-convex pattern when a thermosetting silicone resin is used, and when FIG. 6 uses an ultraviolet curable silicone.
FIG. 4 shows that a silicone resin is applied on a non-glare film 18 with a die coater 14, and is heated and pressed for a predetermined time while being applied to an original plate 13 having a fine uneven pattern. Finally, a silicone resin film 16 having a pattern transferred on both sides is wound. The state of taking is schematically shown.

On the other hand, FIG. 5 schematically shows a state in which a film 19 having a fine concavo-convex pattern transferred thereon is prepared in advance, a silicone resin and a non-glare film are bonded together, passed through a scroll oven, and the silicone resin film 22 having the pattern transferred on both sides is wound up. Is shown.

FIG. 6 shows an example in which an ultraviolet curable silicone resin is applied on a non-glare film 24 with a die coater 25 and bonded to a cylindrical original plate 27, then cured with ultraviolet rays, peeled, and wound with a silicone resin film 28 having a pattern transferred on both sides. The state of taking is schematically shown.

The back electrode is incident on the solar cell, reflects light transmitted without being absorbed by the photoelectric conversion layer, and reenters the photoelectric conversion layer.
By reflecting light in this way, it has a function of efficiently absorbing light by the photoelectric conversion layer. In general, the back electrode can be a metal single layer film of aluminum (Al) or silver (Ag), and the translucent conductive film is made of these metals for the purpose of obtaining a reflection enhancement effect by optical interference. A structure combined with a single layer film may be used.
In addition, since the incident light is scattered by the transparent electrode on the light incident side, it is not necessary to scatter light by the reflective electrode, and recursion using the total reflection condition that can make the reflectivity higher than the metal reflection is possible. A reflective sheet can be used.
The back electrode is exposed to hydrogen plasma when the photoelectric conversion layer is formed.
As a result, the translucency may be deteriorated, and thus the translucent conductive film is preferably a material having excellent resistance to hydrogen plasma.
Specifically, zinc oxide (ZnO) and tin oxide (SnO ₂ ) are preferable.

The photoelectric conversion layer has a pn junction or a pin junction.
The photoelectric conversion element of this invention improves conversion efficiency by providing a texture structure.
For this reason, the structure of a photoelectric converting layer is not specifically limited, Even if it has a photoelectric converting layer of what kind of structure, the effect which improves conversion efficiency can be acquired.
As a constituent material of the photoelectric conversion layer, materials such as GaAs, InP, and Cd / CdTe can be used in addition to general silicon.
Further, in order to expand the convertible wavelength region, a so-called tandem structure in which a plurality of photoelectric conversion layers made of different compounds are stacked may be employed.

The photoelectric conversion layer can be formed by a vacuum film formation method such as a plasma CVD method.
The formation method (formation conditions) is not particularly limited, and may be set as appropriate according to the constituent materials.

The transparent electrode is made of a transparent conductive material.
The transparent conductive material used is not particularly limited, but a material excellent in transparency and conductivity, for example, indium oxide (ITO), zinc oxide (ZnO), tin oxide (SnO ₂ ), and the like are preferable. Moreover, it is preferable that the thickness of a transparent electrode shall be 10-100 nm.
The method for forming the transparent electrode is not particularly limited, and a vacuum film forming method such as a sputtering method can be used.
FIG. 7 is a schematic view for explaining the continuous winding type sputtering method.

Examples of the present invention will be described below.

As the base film, a polycarbonate non-glare film having a thickness of 100 μm was used. In the manufacturing apparatus shown in FIG. 4, a silicone resin (GE Toshiba Silicone, IVS4632) was applied to the surface of the base film, and then Nitto. It is impregnated with a spun T glass cloth (thickness: 100 μm), and then bonded with an original plate 13 having a predetermined pattern and a stainless steel belt 15, and then cured at 120 ° C. for 10 minutes. By peeling, a silicone resin film (thickness 200 μm, transparent substrate) having a pattern transferred on both surfaces was obtained.

The original belt 13 is formed by using a EB resist and an electron beam drawing apparatus to form a pillar-shaped pattern in which cylinders having a width of 150 nm and a height of 150 nm are arranged, and using nickel electroforming to form a nickel plate. A master belt was produced by butt welding.

Next, a translucent conductive film made of Ga-doped ZnO having a thickness of 300 nm was stacked using a DC sputtering method.
The sputtering conditions are shown below.
(ZnO layer)
Target: Ga + ZnO sintered body Sputtering gas: Argon gas pressure: 66.7 Pa
Input power: 0.5 W / cm ²
Substrate temperature: 200 ° C

Next, an n layer, an i layer, and a p layer (polycrystalline silicon layer), which are photoelectric conversion layers, were formed by a plasma CVD method under the following conditions.
(N layers)
Gas used, flow rate: PH ₃ / H ₂ / SiH ₄ = 0.06 sccm / 800 sccm / 5 sccm
Pressure: 133.3Pa
Input power: 50 mW / cm ²
Substrate temperature: 220 ° C
Thickness: 50nm
(I layer)
Gas used, flow rate: H ₂ / SiH ₄ = 1000 sccm / 20 sccm
Pressure: 26.7Pa
Input power: 600 mW / cm ²
Substrate temperature: 220 ° C
Thickness: 1600nm
(P layer)
Gas used, flow rate: B ₂ H ₆ / H ₂ / SiH ₄ = 0.02 sccm / 900 sccm / 4 sccm
Pressure: 66.7Pa
Input power: 180 mW / cm ²
Substrate temperature: 120 ° C
Thickness: 15nm
The reflective electrode was an ITO film having a thickness of 100 nm and formed by DC sputtering.
The sputtering conditions are shown below.
Target: In ₂ O ₃ + SnO ₂ sintered body sputtering gas: Ar / O ₂ = 0.4 Pa / 0.08 Pa
Input power: 0.3 W / cm ²
Substrate temperature: 100 ° C

Next, Sumitomo 3M Scotchlite reflective sheet (High Intensity Great) was bonded using an encap material (GE Toshiba Silicone, XE14-B3445).

Finally, a wiring electrode and an extraction electrode were formed to obtain a solar cell.

Next, the current-voltage characteristics under solar cell standard AM1.5 (100 mW / cm ² ) irradiation conditions were evaluated using a solar simulator.

The open circuit voltage was 0.5 V, the short circuit current was 24 mA / cm ² , the form factor was 0.75, and the conversion efficiency was 9.0%.
<Comparative Example 1>
A solar cell was produced in the same manner as in the example except that the fine uneven pattern was not provided, and the battery characteristics were measured in the same manner as in the example.

The open circuit voltage was 0.52 V, the short circuit current was 18 mA / cm ² , the form factor was 0.75, and the conversion efficiency was 7.2%.

It was confirmed that the solar cell of the example had a larger photoelectric current and higher photoelectric conversion efficiency than the solar cell of the comparative example.

The solar cell and the manufacturing method thereof according to the present invention can be used for a solar cell used for an electric vehicle, a mobile phone, a vending machine, a power supply for a spacecraft, and the like.

It is a fragmentary sectional view of the solar cell which is an example of the photoelectric conversion element of this invention. It is a fragmentary sectional view of the entrance side transparent substrate of the present invention. It is a plane arrangement view of the texture structure of the present invention. It is an example of the manufacturing method of the transparent substrate of this invention. It is an example of the manufacturing method of the transparent substrate of this invention. It is an example of the manufacturing method of the transparent substrate of this invention. It is the schematic of the film-forming apparatus (winding system) of the transparent conductive film of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Transparent substrate 2 ... Transparent conductive film 3 ... Photoelectric conversion layer 4 ... Transparent conductive film 5 ... Adhesive layer 6 ... Reflective substrate 7 ... Back electrode 8... Transparent electrode 9... Design element 10 corresponding to light having a wavelength of 300 to 500 nm... Design element 11 corresponding to light having a wavelength of 500 to 700 nm. Design element 12 corresponding to light having a wavelength of ... Design element 13 corresponding to light having a wavelength of 900 to 1100 nm ... Original belt 14 ... Coating head 15 ... Stainless steel belt 16 ... Transferred Silicone resin film 17 ... Base film (non-glare film, etc.)
18 ... Base film (non-glare film, etc.)
19 ... Embossed film 20 ... Scroll oven 21 ... Base film (non-glare film, etc.)
22 ... Transferred silicone resin film 23 ... Embossed film 24 ... Base film (non-glare film, etc.)
25 ... Coating head 26 ... UV irradiation machine 27 ... Cylindrical master 28 ... Silicone resin film 29 after transfer ... Base film (non-glare film, etc.)
30 ... Transferred silicone resin film 31 ... Temperature adjustment cylinder 32 ... Sputter source 33 ... Vacuum chamber 34 ... Transparent electrode film

Claims (12)

At least a photoelectric conversion element having a transparent electrode, a photoelectric conversion layer, and a back electrode,
A photoelectric conversion element characterized in that the transparent electrode has an insulating layer made of a silicone resin molded article having a fine concavo-convex pattern and a transparent conductive film formed on the fine concavo-convex pattern. 2. The photoelectric conversion element according to claim 1, wherein the silicone resin molded article has a cage-shaped polyorganosilsesquioxane containing 10 wt% or more of an unsaturated compound capable of radical copolymerization. . The photoelectric conversion element according to claim 1, wherein the silicone resin molded product is a molded product obtained by impregnating a glass cloth with a silicone resin and curing. 4. The photoelectric device according to claim 1, wherein the silicone resin molding has an antiglare fine uneven pattern on a surface opposite to a surface on which the transparent conductive film is formed. 5. Conversion element. The photoelectric conversion element according to any one of claims 1 to 4, wherein the silicone resin is an ionizing radiation curable silicone resin. The photoelectric conversion element according to any one of claims 1 to 5, wherein the back electrode is a light reflective electrode in which a retroreflective sheet is bonded to a transparent electrode film. The photoelectric conversion element according to claim 1, wherein the fine uneven pattern is a fine uneven pattern having a height of 30 nm to 1100 nm and a pitch of 30 nm to 1100 nm. The photoelectric conversion element according to any one of claims 1 to 7, wherein the photoelectric conversion element is a solar cell. The photoelectric conversion element according to any one of claims 1 to 8, wherein the photoelectric conversion element is an optical sensor. It is a manufacturing method of the photoelectric conversion element according to any one of claims 1 to 9,
A method for producing a photoelectric conversion element, comprising: pressing an original plate having a predetermined surface shape onto the silicone resin, and transferring the fine uneven pattern onto the silicone resin. It is a manufacturing method of the photoelectric conversion element according to any one of claims 1 to 9,
At least, an uncured silicone resin and a base film are laminated in this order on the concavo-convex forming surface of the original plate having a predetermined surface shape, and the uncured silicone resin is cured by heat or ionizing radiation, and thereafter Removing the original plate and forming an uneven pattern on the silicone resin;
Forming the transparent conductive film on the concavo-convex pattern;
Forming the photoelectric conversion layer on the transparent conductive film;
A method for producing a photoelectric conversion element, comprising a step of laminating the back electrode on the photoelectric conversion layer. The heat resistance temperature of the said base film is 100 degreeC or more, The surface which contact | connects the said silicone resin of this base film has an anti-glare shape, The manufacturing method of the photoelectric conversion element of Claim 11 characterized by the above-mentioned.

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