JPH01233812A - Multi-stage amplifier for microwave - Google Patents

Multi-stage amplifier for microwave

Info

Publication number
JPH01233812A
JPH01233812A JP6013188A JP6013188A JPH01233812A JP H01233812 A JPH01233812 A JP H01233812A JP 6013188 A JP6013188 A JP 6013188A JP 6013188 A JP6013188 A JP 6013188A JP H01233812 A JPH01233812 A JP H01233812A
Authority
JP
Japan
Prior art keywords
short
oscillation
circuit
stub
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6013188A
Other languages
Japanese (ja)
Inventor
Masafumi Shigaki
雅文 志垣
Kazuo Nagatomo
永友 和雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6013188A priority Critical patent/JPH01233812A/en
Publication of JPH01233812A publication Critical patent/JPH01233812A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To reduce number of elements of an oscillation prevention circuit by supplying a bias voltage to an input terminal of a transistor(TR) and providing a function of preventing oscillation to a short-stub applying matching and inserting the oscillation preventing resistor to the opposite side of the short- circuit face. CONSTITUTION:A function of preventing oscillation is provided to a short-stub 2 giving a bias voltage to the input terminal of the TR 1 and applying matching and the oscillation preventing resistor 3 is inserted to the opposite side of the short-circuit face. Since almost no current flows to the short-stub 2 supplying the bias voltage and applying matching, even when the oscillation preventing resistor 3 is inserted to the opposite side of the short-circuit face, no voltage drop exists and even when the constant is varied more or less to use the short- stub 2 with the oscillation preventing resistor 3 inserted thereto as the oscillation prevention, bias supply and matching, the characteristic is not affected by matching with a small change of the constant of other elements. Thus, the number of short-stubs and capacitors of the oscillation preventing circuit is reduced.

Description

【発明の詳細な説明】 〔概 要〕 少なくとも発振防止用抵抗及びショートスタブを持つ発
振防止回路が必要なマイクロ波用多段増幅回路に関し、 発振防止回路の素子数を減することが出来るマイクロ波
用多段増幅回路の供給を目的とし、トランジスタの入力
端子にバイアス電圧を供給し且つ整合を行うショートス
タブに発振防止用の機能を持たせ、且つ、ショート面の
反対側に発振防止用抵抗を挿入した構成とする。
[Detailed Description of the Invention] [Summary] Regarding a microwave multi-stage amplifier circuit that requires an oscillation prevention circuit having at least an oscillation prevention resistor and a short stub, the present invention relates to a microwave multistage amplifier circuit that can reduce the number of elements in the oscillation prevention circuit. For the purpose of supplying a multi-stage amplifier circuit, the short stub that supplies bias voltage to the input terminal of the transistor and performs matching has an oscillation prevention function, and an oscillation prevention resistor is inserted on the opposite side of the short side. composition.

〔産業上の利用分野〕[Industrial application field]

本発明は、少なくとも発振防止用抵抗及びショートスタ
ブを持つ発振防止回路が必要なマイクロ波用多段増幅回
路の改良に関する。
The present invention relates to an improvement in a microwave multistage amplifier circuit that requires an oscillation prevention circuit having at least an oscillation prevention resistor and a short stub.

マイクロ波用多段増幅回路としては、モノリシック形と
バイブリド形があり、又使用するトランジスタとしては
、電界効果トランジスタ、バイポーラトランジスタがあ
るが、何れにしても、素子数を少なくし、モノリシック
形では、チップ面積を小さく出来、バイブリド形では組
立工数を減することが出来ることが望ましい。
There are two types of microwave multi-stage amplifier circuits: monolithic and bibride types, and field-effect transistors and bipolar transistors. It is desirable to be able to reduce the area and, in the case of a hybrid type, to reduce the number of assembly steps.

〔従来の技術〕[Conventional technology]

以下従来例を図を用いて説明する。 A conventional example will be explained below using figures.

第4図は従来例のマイクロ波用多段増幅回路の回路図で
ある。
FIG. 4 is a circuit diagram of a conventional microwave multistage amplifier circuit.

図中01〜C12はコンデンサで、内C4はチップ外に
設ける外付はコンデンサ、R1−R5は抵抗で、内R1
,R4は発振防止用抵抗、10〜12.13’ 、14
°、15〜17.18°。
In the figure, 01 to C12 are capacitors, C4 is an external capacitor installed outside the chip, R1 to R5 are resistors, and R1 is a capacitor.
, R4 is an oscillation prevention resistor, 10 to 12.13', 14
°, 15-17.18°.

19.20は分布定数回路を形成するライン、30.3
1.32はアドミッタンスを形成し一端がオープンとな
っているオープンスタブ、40,41.42”、43’
、44〜46はアドミッタンスを形成し一端がコンデン
サにて高周波的にショートさ・れているショートスタブ
、F ET 1−FET3は電界効果トランジスタ、v
lはバイアス電圧供給用電源、■2はドレイン電圧供給
用電源を示す。
19.20 is the line forming the distributed constant circuit, 30.3
1.32 is an open stub that forms an admittance and is open at one end, 40, 41.42", 43'
, 44 to 46 are short stubs that form an admittance and are shorted at high frequency by a capacitor, FET1 to FET3 are field effect transistors, v
1 indicates a bias voltage supply power supply, and 2 indicates a drain voltage supply power supply.

斗 第今図はKu帯(12GHz 〜18GHz)に使用す
る、電界効果トランジスタFETl−FET3を使用し
た多段増幅回路であり、バイアス電圧供給用電源■1よ
り、抵抗R2,ショートスタブ40.  ライン12を
介して電界効果トランジスタFETIのゲートにバイア
ス電圧を供給し、又バイアス電圧供給用電源■1より、
抵抗R5゜ショートスタブ43゛5 ライン14°及び
18”を介して電界効果トランジスタFE72.FE7
3のゲートにバイアス電圧を供給している。
The figure below shows a multi-stage amplifier circuit using field effect transistors FET1-FET3 for use in the Ku band (12 GHz to 18 GHz). A bias voltage is supplied to the gate of the field effect transistor FETI via the line 12, and from the bias voltage supply power supply ■1,
Resistor R5゜ Short stub 43゛5 Field effect transistor FE72.FE7 via line 14° and 18"
A bias voltage is supplied to the gate of 3.

又ドレイン電圧供給用電源■2より、ショートスタブ4
2′、ライン13’ を介して電界効果トランジスタF
ETIのドレインにドレイン電圧を供給し、又ドレイン
電圧供給用電源v2より、ショートスタブ44.ライン
15を介して電界効果トランジスタFE72のドレイン
にドレイン電圧を供給し、又ショートスタブ45.ライ
ン19を介して電界効果トランジスタFET3のドレイ
ンにドレイン電圧を供給している。
Also, short stub 4 from drain voltage supply power supply ■2
2', field effect transistor F via line 13'
A drain voltage is supplied to the drain of the ETI, and a short stub 44. A drain voltage is supplied to the drain of field effect transistor FE72 via line 15, and short stub 45. A drain voltage is supplied via line 19 to the drain of field effect transistor FET3.

又ライン、ショートスタブ、オープンスタブにて、Ku
帯での利得特性を平坦にし且つインピーダンス整合を行
うようにしている。
Also, on the line, short stub, open stub, Ku
The gain characteristics in the band are flattened and impedance matching is performed.

尚又、帯域の低周波側で発振を起こすことがある為1発
振防止回路として、抵抗R1(50Ω)。
Also, since oscillation may occur on the low frequency side of the band, a resistor R1 (50Ω) is used as an oscillation prevention circuit.

ショートスタブ41.コンデンサC2よりなる回路及び
、抵抗R4(50Ω)、ショートスタブ46、コンデン
サC12よりなる回路を夫々電界効果トランジスタFE
TI、FET2及びFET3のゲート側に設けている。
Short stub 41. The circuit consisting of the capacitor C2 and the circuit consisting of the resistor R4 (50Ω), the short stub 46, and the capacitor C12 are respectively connected to the field effect transistor FE.
It is provided on the gate side of TI, FET2, and FET3.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、従来のマイクロ波用多段増幅回路では、
抵抗R1(50Ω)、ショートスタブ41、コンデンサ
C2よりなる発振防止回路及び、抵抗R4(50Ω)、
ショートスタブ46.コンデンサC12よりなる発振防
止回路をその侭設けているので、モノリシック形では、
チップ面積が大きくなり、バイブリド形では組立工数が
増加する問題点がある。
However, in conventional microwave multi-stage amplifier circuits,
An oscillation prevention circuit consisting of a resistor R1 (50Ω), a short stub 41, and a capacitor C2, and a resistor R4 (50Ω).
Short stub 46. Since an oscillation prevention circuit consisting of capacitor C12 is provided on the other side, in the monolithic type,
There is a problem that the chip area becomes large and the number of assembly steps increases in the hybrid type.

本発明は、発振防止回路の素子数を減することが出来る
マイクロ波用多段増幅回路の供給を目的としている。
An object of the present invention is to provide a multistage amplifier circuit for microwaves that can reduce the number of elements in an oscillation prevention circuit.

〔課題を解決するための手段〕[Means to solve the problem]

第1図は本発明の原理ブロック図である。 FIG. 1 is a block diagram of the principle of the present invention.

少なくとも発振防止用抵抗及びショートスタブを持つ発
振防止回路が必要なマイクロ波用多段増幅回路において
、 第1図に示す如く、トランジスタ1の入力端子にバイア
ス電圧を供給し且つ整合を行うショートスタブ2に発振
防止用の機能を持たせ、且つ、ショート面の反対側に発
振防止用抵抗3を挿入するようにする。
In a microwave multi-stage amplifier circuit that requires an oscillation prevention circuit having at least an oscillation prevention resistor and a short stub, as shown in FIG. A function for preventing oscillation is provided, and an oscillation preventing resistor 3 is inserted on the opposite side of the short surface.

〔作 用〕[For production]

バイアス電圧を供給し且つ整合を行うショートスタブ2
には電流が殆ど流れないので、このショート面の反対側
に発振防止用抵抗3を挿入しても電圧降下はないので問
題はなく、又発振防止用抵抗3を挿入したショートスタ
ブ2を発振防止用及びバイアス供給及び整合用にする為
に定数を多少変えても、他の素子の定数を多少変更して
整合するようにすれば、特性には影響がない。
Short stub 2 that supplies bias voltage and performs matching
Since almost no current flows through , there is no problem because there is no voltage drop even if the oscillation prevention resistor 3 is inserted on the opposite side of this shorted surface, and the short stub 2 with the oscillation prevention resistor 3 inserted is used to prevent oscillation. Even if the constants are slightly changed for purposes such as bias supply and matching, the characteristics will not be affected as long as the constants of other elements are slightly changed for matching.

従って、発振防止回路のショートスタブ及びコンデンサ
を減することが出来、モノリシック形ではチップの面積
を小さく出来、バイブリド形では組立工数を減すること
が出来る。
Therefore, the number of short stubs and capacitors in the oscillation prevention circuit can be reduced, the chip area can be reduced in the monolithic type, and the number of assembly steps can be reduced in the hybrid type.

〔実施例〕〔Example〕

以下本発明の1実施例に付き図に従って説明する。 An embodiment of the present invention will be described below with reference to the accompanying drawings.

第2図は本発明の実施例のマイクロ波用多段増幅回路の
回路図、第3図は第2図のマイクロ波用多段増幅回路を
モノリシンク形にした場合のチップの平面図である。
FIG. 2 is a circuit diagram of a microwave multi-stage amplifier circuit according to an embodiment of the present invention, and FIG. 3 is a plan view of a chip in which the microwave multi-stage amplifier circuit of FIG. 2 is made into a monolithic type.

第2図で第4図の場合と異なる点は、発振防止用抵抗R
4を、ショートスタブ43のショート面の反対側に挿入
し、ショートスタブ46及びコンデンサ12を減じ、又
整合の為に、第4図のライン13”、14’、18’及
びショートスタブ42°、43゛の定数を多少変更し、
ライン13゜14.18及びショートスタブ42.43
とした点である。
The difference in Fig. 2 from Fig. 4 is that the oscillation prevention resistor R
4 to the opposite side of the short side of the short stub 43 to reduce the short stub 46 and the capacitor 12, and for matching, line 13'', 14', 18' and the short stub 42° in FIG. Change the constant of 43゛ a little,
Line 13°14.18 and short stub 42.43
This is the point.

こうすることにより、チップ面積を小さくすることが出
来る点を第3図で説明する。
The point that the chip area can be reduced by doing this will be explained with reference to FIG.

第3図は第2図のマイクロ波用多段増幅回路をモノリシ
ック形にした場合のチップの平面図であり、従来例の回
路の場合だと、コンデンサc5の近辺に、ショートスタ
ブ46.コンデンサC12を設けねばならず、この第3
図のチップの1.5mmX2.7mmの面積に入らなか
ったものが素子を減することにより入るようになった。
FIG. 3 is a plan view of a chip when the microwave multi-stage amplifier circuit of FIG. 2 is made into a monolithic type. In the case of the conventional circuit, a short stub 46. A capacitor C12 must be provided, and this third
What could not fit into the 1.5 mm x 2.7 mm area of the chip shown in the figure now fits by reducing the number of elements.

尚素子数が減じた分信頬性は向上する。Furthermore, the sensitivity is improved by reducing the number of elements.

勿論バイブリド形の場合は、素子数が減じた分組立工数
は滅じ、又信頼性は向上する。
Of course, in the case of a hybrid type, the number of assembly steps is reduced because the number of elements is reduced, and reliability is improved.

尚、発振防止用抵抗R1を、ショートスタブ40のショ
ート面の反対側に挿入し、ショートスタブ41.コンデ
ンサC2を減じ、ショートスタブ40を発振防止用及び
バイアス供給及び整合用にする為に定数を多少変え、近
辺のライン1o、11.12及びオーブンスタブ30の
定数を多少変更し整合するようにしても勿論よい。
Note that the oscillation prevention resistor R1 is inserted on the opposite side of the short side of the short stub 40, and the short stub 41. The constants were slightly changed to reduce the capacitor C2 and use the short stub 40 for oscillation prevention, bias supply, and matching, and the constants of the nearby lines 1o, 11.12 and oven stub 30 were slightly changed for matching. Of course it's good too.

こうすれば、更に素子数は減じ、モノリシック形の場合
はチップ面積は小さくなり、又信頼性は向上し、バイブ
リド形の場合は、素子数が減じた分組立工数は減じ、又
信頼性は向上する。
In this way, the number of elements can be further reduced, and in the case of a monolithic type, the chip area becomes smaller and the reliability is improved, and in the case of a hybrid type, the number of assembly steps is reduced by the reduction in the number of elements, and the reliability is improved. do.

以上は、トランジスタは電界効果トランジスタの場合で
説明したが、これはバイポーラトランジスタの場合であ
っても勿論本発明は適用出来る。
Although the above description has been made in the case where the transistor is a field effect transistor, the present invention can of course be applied even in the case of a bipolar transistor.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明せる如く本発明によれば、発振防止回路
の素子数を減することが出来、モノリシック形の場合は
チップ面積を小さ(出来ると共に信頼性を向上出来、バ
イブリド形の場合は、素子数が減じた分組立工数を減す
ることが出来ると共に信頼性を向上出来る効果がある。
As explained in detail above, according to the present invention, the number of elements in the oscillation prevention circuit can be reduced, and in the case of a monolithic type, the chip area can be reduced (and reliability can be improved), and in the case of a hybrid type, the number of elements in the oscillation prevention circuit can be reduced. As the number of parts is reduced, the number of assembly steps can be reduced and reliability can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の原理ブロック図、 第2図は本発明の実施例のマイクロ波用多段増幅回路の
回路図、 第3図は第2図のマイクロ波用多段増幅回路をモノリシ
ック形にした場合のチップの平面図、第4図は従来例の
マイクロ波用多段増幅回路の回路図である。 図において、 lはトランジスタ、 2.40.41〜46.42’ 、43°はショートス
タブ、 3、R1,R4は発振防止用抵抗、 10〜20.13’、14° ライン、30.31.3
2はオープンスタブ、 C1〜C12はコンデンサ、 R2,R3,R5は抵抗、 FETI〜FET3は電界効果トランジスタ、vlはバ
イアス電圧供給用電源、 V2はドレイン電圧供給用電源を示す。
Figure 1 is a block diagram of the principle of the present invention. Figure 2 is a circuit diagram of a microwave multi-stage amplifier circuit according to an embodiment of the present invention. Figure 3 is a monolithic version of the microwave multi-stage amplifier circuit of Figure 2. FIG. 4 is a circuit diagram of a conventional microwave multi-stage amplifier circuit. In the figure, l is a transistor, 2.40.41~46.42', 43° is a short stub, 3, R1, R4 are oscillation prevention resistors, 10~20.13', 14° line, 30.31. 3
2 is an open stub, C1 to C12 are capacitors, R2, R3, and R5 are resistors, FETI to FET3 are field effect transistors, vl is a bias voltage supply power supply, and V2 is a drain voltage supply power supply.

Claims (1)

【特許請求の範囲】 少なくとも発振防止用抵抗及びショートスタブを持つ発
振防止回路が必要なマイクロ波用多段増幅回路において
、 トランジスタ(1)の入力端子にバイアス電圧を供給し
且つ整合を行うショートスタブ(2)に発振防止用の機
能を持たせ、且つ、ショート面の反対側に発振防止用抵
抗(3)を挿入したことを特徴とするマイクロ波用多段
増幅回路。
[Claims] In a microwave multi-stage amplifier circuit that requires an oscillation prevention circuit having at least an oscillation prevention resistor and a short stub, the short stub (1) supplies a bias voltage to the input terminal of the transistor (1) and performs matching. A multistage amplifier circuit for microwaves, characterized in that (2) has an oscillation prevention function, and an oscillation prevention resistor (3) is inserted on the opposite side of the short surface.
JP6013188A 1988-03-14 1988-03-14 Multi-stage amplifier for microwave Pending JPH01233812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6013188A JPH01233812A (en) 1988-03-14 1988-03-14 Multi-stage amplifier for microwave

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6013188A JPH01233812A (en) 1988-03-14 1988-03-14 Multi-stage amplifier for microwave

Publications (1)

Publication Number Publication Date
JPH01233812A true JPH01233812A (en) 1989-09-19

Family

ID=13133274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6013188A Pending JPH01233812A (en) 1988-03-14 1988-03-14 Multi-stage amplifier for microwave

Country Status (1)

Country Link
JP (1) JPH01233812A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0837433A (en) * 1994-05-19 1996-02-06 Matsushita Electric Ind Co Ltd High frequency power amplifier
JPH1065464A (en) * 1996-08-23 1998-03-06 Toshiba Corp Microwave circuit
US6239670B1 (en) 1998-03-06 2001-05-29 Nec Corporation Short-stub matching circuit
JP2002325021A (en) * 2001-04-25 2002-11-08 Mitsubishi Electric Corp Microwave wide band amplifier
WO2004013928A1 (en) * 2002-08-01 2004-02-12 Matsushita Electric Industrial Co., Ltd. Transmission line and semiconductor integrated circuit device
JP2014068120A (en) * 2012-09-25 2014-04-17 Mitsubishi Electric Corp Microwave amplifier

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352335A (en) * 1976-10-23 1978-05-12 Fujitsu Ltd Microwave band stabilizing circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352335A (en) * 1976-10-23 1978-05-12 Fujitsu Ltd Microwave band stabilizing circuit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0837433A (en) * 1994-05-19 1996-02-06 Matsushita Electric Ind Co Ltd High frequency power amplifier
JPH1065464A (en) * 1996-08-23 1998-03-06 Toshiba Corp Microwave circuit
US6239670B1 (en) 1998-03-06 2001-05-29 Nec Corporation Short-stub matching circuit
JP2002325021A (en) * 2001-04-25 2002-11-08 Mitsubishi Electric Corp Microwave wide band amplifier
WO2004013928A1 (en) * 2002-08-01 2004-02-12 Matsushita Electric Industrial Co., Ltd. Transmission line and semiconductor integrated circuit device
US6946934B2 (en) 2002-08-01 2005-09-20 Matsushita Electric Industrial Co., Ltd. Transmission line and semiconductor integrated circuit device
US7088204B2 (en) 2002-08-01 2006-08-08 Matsushita Electric Industrial Co., Ltd. Transmission line and semiconductor integrated circuit device
CN1326286C (en) * 2002-08-01 2007-07-11 松下电器产业株式会社 Transmission line and semiconductor integrated circuit device
JP2014068120A (en) * 2012-09-25 2014-04-17 Mitsubishi Electric Corp Microwave amplifier

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