JPH01231937A - Formation of monomolecular film - Google Patents
Formation of monomolecular filmInfo
- Publication number
- JPH01231937A JPH01231937A JP5639988A JP5639988A JPH01231937A JP H01231937 A JPH01231937 A JP H01231937A JP 5639988 A JP5639988 A JP 5639988A JP 5639988 A JP5639988 A JP 5639988A JP H01231937 A JPH01231937 A JP H01231937A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- monomolecular film
- photoresist
- glass substrate
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 27
- 238000000059 patterning Methods 0.000 abstract description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 9
- 238000004506 ultrasonic cleaning Methods 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 1
- GAKGLUKKMVVJMW-UHFFFAOYSA-N trichloro(octadecylsilyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[SiH2][Si](Cl)(Cl)Cl GAKGLUKKMVVJMW-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 125000001165 hydrophobic group Chemical group 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004879 molecular function Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
- B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
- B05D1/202—Langmuir Blodgett films (LB films)
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ラングミュア・プロジェット法で基板上に単
分子膜を形成する方法で、特にその単分子膜のパターニ
ング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a monomolecular film on a substrate by the Langmuir-Prodgett method, and particularly to a method for patterning the monomolecular film.
生体の分子機能をセンサ等に利用しようというバイオエ
レクトロニクスにおいて、分子を1分子ずつ制御して基
板上に形成することは重要な課題である。In bioelectronics, which aims to utilize biological molecular functions for sensors and the like, controlling molecules one by one to form them on a substrate is an important issue.
その方法の1つに、ラングミュア拳プロジェット法とい
われる単分子膜形成方法がある。この方法を第3図、第
4図を参照して以下に説明する。One such method is a monomolecular film forming method called the Langmuir-Fist-Prodget method. This method will be explained below with reference to FIGS. 3 and 4.
水溶液1の水面上に成膜物の単分子層2を形成する。こ
のような単分子層2を形成できる物質は、1個の分子の
中に親水基3という水溶液1になじみやすい極性部位と
、疎水基4という水になじみにくい非極性部位とが共存
している。A monomolecular layer 2 of the film-formed material is formed on the surface of the aqueous solution 1 . Substances that can form such a monomolecular layer 2 have a hydrophilic group 3, a polar moiety that is easily compatible with the aqueous solution 1, and a hydrophobic group 4, a non-polar moiety that is not compatible with water, coexisting in one molecule. .
このバランスのとれている分子は水面上に展開すると、
浮き沈みせず、水と空気との界面に吸着されて単分子層
2となる。When this balanced molecule unfolds on the water surface,
It does not float or sink, but is adsorbed at the interface between water and air, forming a monomolecular layer 2.
次にガラス基板5をステアリルトリクロロシランを用い
て疎水処理を施す。そしてこの疎水処理を施したガラス
基板5を先に説明した単分子層2のある水溶液1中に鉛
直方向に浸漬すると、単分子層2の各単分子の疎水基4
がガラス基板5に付着してこのガラス基板5上に単分子
膜が形成される。なお第3図、第4図の6は浮子、7は
重錘である。Next, the glass substrate 5 is subjected to hydrophobic treatment using stearyltrichlorosilane. When the glass substrate 5 subjected to this hydrophobic treatment is vertically immersed in the aqueous solution 1 containing the monomolecular layer 2 described above, the hydrophobic groups 4 of each monomolecule of the monomolecular layer 2 are immersed.
is attached to the glass substrate 5, and a monomolecular film is formed on the glass substrate 5. In addition, 6 in FIGS. 3 and 4 is a float, and 7 is a weight.
そして上記のようにして形成される単分子膜を所定の形
状にパターニングする方法としては、(1)機械的に力
をかけ、不必要部分を剥離する。(2)ガラス基板5上
に形成された単分子膜の上にフォトマスクをかけ、不必
要部分に光をあて、その熱により単分子膜を破壊してパ
ターニングする。の2つの方法がとられている。The method for patterning the monomolecular film formed as described above into a predetermined shape is (1) applying mechanical force to peel off unnecessary portions. (2) A photomask is placed on the monomolecular film formed on the glass substrate 5, light is applied to unnecessary parts, and the monomolecular film is destroyed and patterned by the heat. Two methods are used.
上記従来の単分子膜のパターニング方法のうち前者は、
単分子膜を機械的な力でもってはぎとるため、精度よく
細め\いパターンを描くことは難しかった。また後者の
方法では、光熱によって破壊された単分子膜かガラス基
板5からとれないで残ってしまうという問題があった。Among the conventional monolayer patterning methods mentioned above, the former is
Because the monomolecular film is peeled off using mechanical force, it was difficult to accurately draw thin patterns. Further, in the latter method, there was a problem in that the monomolecular film destroyed by light and heat could not be removed from the glass substrate 5 and remained.
本発明は上記のことにかんがみなされたもので、ガラス
基板上での単分子膜のパターニングを任意のパターンに
、かつ精度よく行なうことができるようにした単分子膜
形成方法を提供することを目的とするものである。The present invention has been made in view of the above, and an object of the present invention is to provide a monomolecular film forming method that enables patterning of a monomolecular film on a glass substrate into an arbitrary pattern with high precision. That is.
〔課題を解決するための手段及び作用〕上記目的を達成
するために、本発明に係る方法及び作用は以下のように
した。[Means and operations for solving the problems] In order to achieve the above object, the method and operations according to the present invention are as follows.
まずガラス基板上にフォトレジスト膜を塗布し、通常の
フォトリソグラフィでパターニングする。フォトリソグ
ラフィはIcの製作工程に一般に使用されていて数ミク
ロンの精度で任意のパターニングを行なうことができる
。First, a photoresist film is applied onto a glass substrate and patterned using normal photolithography. Photolithography is generally used in the Ic manufacturing process and can perform arbitrary patterning with an accuracy of several microns.
そしてフォトレジストがパターニングされているガラス
基板をステアリルトリクロロシランCCH3(CH2)
+7S i CD 3 )溶液に浸漬し、フォトレジス
トがついていないガラス基板上に疎水処理を施す。ガラ
ス基板は酸化シリコン5i02であり、表面はOH基が
存在しているので親水性である。CH3(CH2) +
7slcΩ3は、これを溶かしている溶媒中に含まれる
水と反応して、CH3(CH2) 、、S 1(OH)
3となり、ガラス表面上のOH基と脱水反応を行ない、
CHs (CH2)r□基は疎水基であるため表面は
疎水性となる。Then, the glass substrate on which the photoresist is patterned is coated with stearyltrichlorosilane CCH3 (CH2).
+7S i CD 3 ) solution to perform hydrophobic treatment on the glass substrate without photoresist. The glass substrate is silicon oxide 5i02, and the surface is hydrophilic due to the presence of OH groups. CH3 (CH2) +
7slcΩ3 reacts with water contained in the solvent in which it is dissolved to form CH3(CH2),,S1(OH)
3, which undergoes a dehydration reaction with the OH groups on the glass surface,
Since the CHs (CH2)r□ group is a hydrophobic group, the surface becomes hydrophobic.
次にフォトレジスト膜をアセトンもしくはアルコールで
剥離する。フォトレジスト剥離後の表面はCH3(CH
2) +7s i C1) 3と反応していないので、
親水性である。Next, the photoresist film is removed using acetone or alcohol. The surface after photoresist peeling is CH3 (CH
2) +7s i C1) Since it does not react with 3,
It is hydrophilic.
最後に単分子層が形成された水中へ鉛直方向にガラス基
板を浸漬すると、ガラス基板上の疎性処理が施された部
分のみ単分子膜が形成される。Finally, when the glass substrate is vertically immersed into the water in which the monomolecular layer has been formed, a monomolecular film is formed only on the portions of the glass substrate that have been subjected to the phobic treatment.
本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described based on the drawings.
Ts1図は本発明方法の一例を示す工程図である。Figure Ts1 is a process chart showing an example of the method of the present invention.
始めに第1図(A)に示すように、通常のフォトリング
ラフィ技術を用いてガラス基板5上にフォトレジスト8
を任意の形状にパターニングする。ただし、このときの
フォトレジストのプリベークを80℃、30分、ポスト
ベークを60℃、30分とする。この条件は通常の条件
よりもやや低い温度であり、後にフォトレジスト8を剥
離する場合、容易に常温で剥離される。First, as shown in FIG. 1(A), a photoresist 8 is formed on a glass substrate 5 using a normal photolithography technique.
pattern into any shape. However, at this time, the photoresist is pre-baked at 80° C. for 30 minutes, and post-baked at 60° C. for 30 minutes. This condition is a slightly lower temperature than normal conditions, and when the photoresist 8 is to be peeled off later, it can be easily peeled off at room temperature.
次に第1図(B)に示すように、フォトレジスト8をパ
ターニングしたガラス基板5を1mmol/Nの割合で
ステアリルトリクロロシランを入れたトルエン溶液9に
1時間程度浸漬する。Next, as shown in FIG. 1B, the glass substrate 5 on which the photoresist 8 has been patterned is immersed in a toluene solution 9 containing stearyltrichlorosilane at a ratio of 1 mmol/N for about 1 hour.
これにより、フォトレジスト2のない部分のガラス基板
5の表面は疎水処理が行なわれる。処理後、ガラス基板
5をトルエンで洗浄する。As a result, the surface of the glass substrate 5 where the photoresist 2 is not present is subjected to hydrophobic treatment. After the treatment, the glass substrate 5 is cleaned with toluene.
そして第1図(C)に示すように、上記ガラス基板5を
アセトン溶液に浸漬し、超音波洗浄を行ない、フォトレ
ジスト8を剥離する。先にプリベーク、ポスベークを通
常のフォトレジストの°場合より低い温度で行なったた
め、常温でフォトレジスト8を剥離することができる。Then, as shown in FIG. 1C, the glass substrate 5 is immersed in an acetone solution and subjected to ultrasonic cleaning to peel off the photoresist 8. Since the pre-baking and post-baking were performed at a temperature lower than that for ordinary photoresists, the photoresist 8 can be peeled off at room temperature.
これによりガラス基板5上に疎水性のパターニング10
がなされる。As a result, a hydrophobic pattern 10 is formed on the glass substrate 5.
will be done.
最後に、第4図に示すように水面上に単分子層2を形成
した水溶液1に、上記疎水性のパターニングを施したガ
ラス基板5を鉛直方向に浸漬し、これの疎水処理をした
面にのみ単分子膜を付むさせる。Finally, as shown in FIG. 4, the hydrophobically patterned glass substrate 5 is vertically immersed in the aqueous solution 1 in which a monomolecular layer 2 is formed on the water surface, and the hydrophobically treated surface is only to attach a monolayer.
このようにして第1図(D)に示すような任意のパター
ンで単分子膜がガラスM[5上に形成される。In this way, a monomolecular film is formed on the glass M[5 in an arbitrary pattern as shown in FIG. 1(D).
ところで、疎水処理は、第2図(A)に示すように、C
H3(CH2)+□S i C03を溶かす溶媒中の水
と反応したトリクロロシラン剤CH3(CH2) +7
s i (OH) aとガラス基板上の一〇H基が脱
水反応をしてTS2図(B)のようにガラス基板5を疎
水化するものである。By the way, hydrophobic treatment is performed by C
H3 (CH2) + □S i Trichlorosilane agent CH3 (CH2) +7 that reacted with water in the solvent that dissolves C03
The dehydration reaction between s i (OH) a and the 10H group on the glass substrate makes the glass substrate 5 hydrophobic as shown in TS2 diagram (B).
従って基板に用いるものはガラスだけとは限らず、基板
表面に一〇H基のでているもの、例えば、5n02、I
n O2、ITOなどの電極にも応用できる。また疎
水処理を行なうトリクロロシラン剤はステアリルトリク
ロロシランに限るものではなく、CH3(CH2) +
oS i C11等、アルキル鎖の長さの違うものでも
同様に用いることができる。Therefore, the substrate used is not limited to glass, but also substrates with 10H groups on the surface, such as 5n02, I
It can also be applied to electrodes such as nO2 and ITO. Furthermore, the trichlorosilane agent that performs hydrophobic treatment is not limited to stearyltrichlorosilane, but also CH3 (CH2) +
Those with different alkyl chain lengths, such as oS i C11, can also be used in the same way.
本発明によれば、フォトレジスト膜で疎水処理のパター
ニングを行なうため、任意のパターンが精度よく成形で
きる。従って自由な素子設計が可能となり、センサ、バ
イオエレクトロニクスへの応用が広がる。According to the present invention, since patterning is performed using a photoresist film for hydrophobic treatment, any pattern can be formed with high precision. Therefore, it becomes possible to design elements freely, and the application to sensors and bioelectronics is expanded.
第1図(A)、(B)、(C)、(D)は本発明の実施
例の工程図、第2図(A)、(B)は疎水処理の原理説
明図、第3図(A)、(B)、第4図はラングミュア・
プロジェット法による単分子膜の作製工程を示す説明図
である。
1は水溶液、2は単分子層、3は親水基、4は疎水基、
5はガラス基板、9はフォトレジスト。
第1図
(A) 第2図
に)(B)
第3図
第4図Figures 1 (A), (B), (C), and (D) are process diagrams of examples of the present invention, Figures 2 (A) and (B) are diagrams explaining the principle of hydrophobic treatment, and Figure 3 ( A), (B), Figure 4 shows Langmuir
FIG. 3 is an explanatory diagram showing a monomolecular film manufacturing process by the Projectet method. 1 is an aqueous solution, 2 is a monomolecular layer, 3 is a hydrophilic group, 4 is a hydrophobic group,
5 is a glass substrate, 9 is a photoresist. Figure 1 (A) Figure 2) (B) Figure 3 Figure 4
Claims (1)
を形成する工程において、基板上にフォトレジスト膜を
パターニングする第1工程と、フォトレジストがパター
ニングされている基板をステアリルトリクロロシラン(
CH_3(CH_2)_1_7SiCl_3)溶液等の
疎水処理溶液に浸漬して疎水処理を施す第2工程と、基
板上のフォトレジスト膜をアセトンもしくはアルコール
で剥離する第3工程と、水面上に単分子膜を形成した水
溶液中に上記基板を浸漬し、その表面の疎水処理を施し
た部分に単分子膜を形成する第4工程からなることを特
徴とする単分子膜形成方法。In the step of forming a monomolecular film on a substrate by the Langmuir-Prodgett method, the first step is to pattern a photoresist film on the substrate, and the substrate on which the photoresist is patterned is coated with stearyltrichlorosilane (
The second step is to perform hydrophobic treatment by immersing the substrate in a hydrophobic treatment solution such as CH_3 (CH_2)_1_7SiCl_3) solution, the third step is to peel off the photoresist film on the substrate with acetone or alcohol, and the monomolecular film is formed on the water surface. A method for forming a monomolecular film, comprising a fourth step of immersing the substrate in the formed aqueous solution and forming a monomolecular film on the hydrophobically treated portion of the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5639988A JPH01231937A (en) | 1988-03-11 | 1988-03-11 | Formation of monomolecular film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5639988A JPH01231937A (en) | 1988-03-11 | 1988-03-11 | Formation of monomolecular film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01231937A true JPH01231937A (en) | 1989-09-18 |
Family
ID=13026121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5639988A Pending JPH01231937A (en) | 1988-03-11 | 1988-03-11 | Formation of monomolecular film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01231937A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009172766A (en) * | 2009-04-20 | 2009-08-06 | Masamichi Fujihira | Method for duplicating molecular pattern |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262867A (en) * | 1986-05-09 | 1987-11-14 | Matsushita Electric Ind Co Ltd | Formation of monomolecular built-up film pattern |
JPS63161629A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Corp | Substrate |
JPS63161628A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Corp | Substrate |
JPS63161630A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Corp | Substrate |
-
1988
- 1988-03-11 JP JP5639988A patent/JPH01231937A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262867A (en) * | 1986-05-09 | 1987-11-14 | Matsushita Electric Ind Co Ltd | Formation of monomolecular built-up film pattern |
JPS63161629A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Corp | Substrate |
JPS63161628A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Corp | Substrate |
JPS63161630A (en) * | 1986-12-25 | 1988-07-05 | Toshiba Corp | Substrate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009172766A (en) * | 2009-04-20 | 2009-08-06 | Masamichi Fujihira | Method for duplicating molecular pattern |
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JPS62150350A (en) | Formation of pattern | |
JPS61119062A (en) | Formation of metal wiring pattern |