JPH01230238A - ドライエッチング方法 - Google Patents
ドライエッチング方法Info
- Publication number
- JPH01230238A JPH01230238A JP1638289A JP1638289A JPH01230238A JP H01230238 A JPH01230238 A JP H01230238A JP 1638289 A JP1638289 A JP 1638289A JP 1638289 A JP1638289 A JP 1638289A JP H01230238 A JPH01230238 A JP H01230238A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- thermal oxide
- oxide film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000001312 dry etching Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229940096118 ella Drugs 0.000 description 2
- OOLLAFOLCSJHRE-ZHAKMVSLSA-N ulipristal acetate Chemical compound C1=CC(N(C)C)=CC=C1[C@@H]1C2=C3CCC(=O)C=C3CC[C@H]2[C@H](CC[C@]2(OC(C)=O)C(C)=O)[C@]2(C)C1 OOLLAFOLCSJHRE-ZHAKMVSLSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1638289A JPH01230238A (ja) | 1989-01-27 | 1989-01-27 | ドライエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1638289A JPH01230238A (ja) | 1989-01-27 | 1989-01-27 | ドライエッチング方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4926681A Division JPS57164529A (en) | 1981-04-03 | 1981-04-03 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01230238A true JPH01230238A (ja) | 1989-09-13 |
| JPH0547977B2 JPH0547977B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Family
ID=11914731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1638289A Granted JPH01230238A (ja) | 1989-01-27 | 1989-01-27 | ドライエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01230238A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5480685A (en) * | 1977-12-09 | 1979-06-27 | Chiyou Uru Esu Ai Gijiyutsu Ke | Dry etching method |
-
1989
- 1989-01-27 JP JP1638289A patent/JPH01230238A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5480685A (en) * | 1977-12-09 | 1979-06-27 | Chiyou Uru Esu Ai Gijiyutsu Ke | Dry etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0547977B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4182646A (en) | Process of etching with plasma etch gas | |
| JPH04130723A (ja) | リアクティブイオンエッチング装置及びプラズマプロセス装置 | |
| JPS63117423A (ja) | 二酸化シリコンのエツチング方法 | |
| JP3094470B2 (ja) | ドライエッチング方法 | |
| JPH01230238A (ja) | ドライエッチング方法 | |
| JPH0160939B2 (enrdf_load_stackoverflow) | ||
| JPH05251399A (ja) | 枚葉式エッチャーによるシリコン窒化膜のエッチング方法 | |
| JPS6043829A (ja) | ドライエッチング方法 | |
| JPS59167021A (ja) | 半導体装置の製造方法 | |
| JPH0382120A (ja) | 膜のパターニング方法 | |
| JPH03129821A (ja) | 半導体装置の製造方法 | |
| JP3000593B2 (ja) | エッチング方法 | |
| JP2600839B2 (ja) | 窒化シリコン膜のエッチング方法 | |
| JPH03155621A (ja) | ドライエッチング方法 | |
| JPS62232926A (ja) | ドライエツチング方法 | |
| JPH0817170B2 (ja) | 半導体装置のエッチング方法 | |
| JPH0353521A (ja) | 半導体装置の製造方法 | |
| JPH0451520A (ja) | 半導体装置の製造方法 | |
| JPS5846637A (ja) | 反応性イオンエツチング方法 | |
| JPS6230268B2 (enrdf_load_stackoverflow) | ||
| JPS58132933A (ja) | 選択ドライエツチング方法 | |
| JPH0220021A (ja) | 半導体装置の制造方法 | |
| JPH04278535A (ja) | 配線形成方法 | |
| JPH02114524A (ja) | 半導体装置の製造方法 | |
| JPS62106629A (ja) | 半導体装置の製造方法 |