JPH01230221A - 非単結晶半導体層の単結晶化方法 - Google Patents

非単結晶半導体層の単結晶化方法

Info

Publication number
JPH01230221A
JPH01230221A JP813889A JP813889A JPH01230221A JP H01230221 A JPH01230221 A JP H01230221A JP 813889 A JP813889 A JP 813889A JP 813889 A JP813889 A JP 813889A JP H01230221 A JPH01230221 A JP H01230221A
Authority
JP
Japan
Prior art keywords
single crystal
scanning
semiconductor layer
crystal semiconductor
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP813889A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0353772B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junji Sakurai
桜井　潤治
Haruhisa Mori
森　治久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP813889A priority Critical patent/JPH01230221A/ja
Publication of JPH01230221A publication Critical patent/JPH01230221A/ja
Publication of JPH0353772B2 publication Critical patent/JPH0353772B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP813889A 1989-01-17 1989-01-17 非単結晶半導体層の単結晶化方法 Granted JPH01230221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP813889A JPH01230221A (ja) 1989-01-17 1989-01-17 非単結晶半導体層の単結晶化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP813889A JPH01230221A (ja) 1989-01-17 1989-01-17 非単結晶半導体層の単結晶化方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56137546A Division JPS5839012A (ja) 1981-08-31 1981-08-31 非単結晶半導体層の単結晶化方法

Publications (2)

Publication Number Publication Date
JPH01230221A true JPH01230221A (ja) 1989-09-13
JPH0353772B2 JPH0353772B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-16

Family

ID=11684939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP813889A Granted JPH01230221A (ja) 1989-01-17 1989-01-17 非単結晶半導体層の単結晶化方法

Country Status (1)

Country Link
JP (1) JPH01230221A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100661A (ja) * 2004-09-30 2006-04-13 Sony Corp 薄膜半導体装置の製造方法
JP2008091511A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP2017017292A (ja) * 2015-07-06 2017-01-19 国立大学法人島根大学 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法
WO2021145176A1 (ja) * 2020-01-14 2021-07-22 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100661A (ja) * 2004-09-30 2006-04-13 Sony Corp 薄膜半導体装置の製造方法
JP2008091511A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP2017017292A (ja) * 2015-07-06 2017-01-19 国立大学法人島根大学 結晶化方法、パターニング方法、および、薄膜トランジスタ作製方法
WO2021145176A1 (ja) * 2020-01-14 2021-07-22 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法

Also Published As

Publication number Publication date
JPH0353772B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-16

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