JPH01229496A - ガリウム砒素集積回路 - Google Patents

ガリウム砒素集積回路

Info

Publication number
JPH01229496A
JPH01229496A JP63053658A JP5365888A JPH01229496A JP H01229496 A JPH01229496 A JP H01229496A JP 63053658 A JP63053658 A JP 63053658A JP 5365888 A JP5365888 A JP 5365888A JP H01229496 A JPH01229496 A JP H01229496A
Authority
JP
Japan
Prior art keywords
normally
potential
node
memory cell
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63053658A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0459716B2 (enrdf_load_stackoverflow
Inventor
Satoshi Takano
聡 高野
Hiroyuki Makino
博之 牧野
Shuichi Matsue
松江 秀一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP63053658A priority Critical patent/JPH01229496A/ja
Publication of JPH01229496A publication Critical patent/JPH01229496A/ja
Publication of JPH0459716B2 publication Critical patent/JPH0459716B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP63053658A 1988-03-09 1988-03-09 ガリウム砒素集積回路 Granted JPH01229496A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63053658A JPH01229496A (ja) 1988-03-09 1988-03-09 ガリウム砒素集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63053658A JPH01229496A (ja) 1988-03-09 1988-03-09 ガリウム砒素集積回路

Publications (2)

Publication Number Publication Date
JPH01229496A true JPH01229496A (ja) 1989-09-13
JPH0459716B2 JPH0459716B2 (enrdf_load_stackoverflow) 1992-09-24

Family

ID=12948958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63053658A Granted JPH01229496A (ja) 1988-03-09 1988-03-09 ガリウム砒素集積回路

Country Status (1)

Country Link
JP (1) JPH01229496A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046990A3 (en) * 2001-11-21 2003-12-31 Micron Technology Inc Method and apparatus for standby power reduction in semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046990A3 (en) * 2001-11-21 2003-12-31 Micron Technology Inc Method and apparatus for standby power reduction in semiconductor devices
US6819621B2 (en) 2001-11-21 2004-11-16 Micron Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices
US6873562B2 (en) 2001-11-21 2005-03-29 Micrhon Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices
US7072230B2 (en) 2001-11-21 2006-07-04 Micron Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices

Also Published As

Publication number Publication date
JPH0459716B2 (enrdf_load_stackoverflow) 1992-09-24

Similar Documents

Publication Publication Date Title
US4342101A (en) Nonvolatile semiconductor memory circuits
US4665508A (en) Gallium arsenide MESFET memory
US4771194A (en) Sense amplifier for amplifying signals on a biased line
US4375677A (en) Dynamic random access memory cell using field effect devices
JPH011328A (ja) 電子論理回路
CN112687308A (zh) 低功耗静态随机存储器单元以及存储器
JPH01229496A (ja) ガリウム砒素集積回路
US5287301A (en) Static RAM cell
US20240046983A1 (en) Circuit structure and related method for radiation resistant memory cell
JPH0459719B2 (enrdf_load_stackoverflow)
JPS58147889A (ja) 半導体装置
Law et al. GaAs Schmitt trigger memory cell design
JPS63285795A (ja) 半導体メモリ装置
JPS63314861A (ja) 化合物半導体スタティックメモリ
JP2823294B2 (ja) ガリウム砒素半導体記憶装置
JPS63272120A (ja) 半導体集積回路
JPS6059589A (ja) 半導体メモリ装置
JP2515021B2 (ja) ガリウム砒素半導体集積回路
JPH02232896A (ja) ガリウム砒素半導体記憶装置
JPH0728009B2 (ja) ガリウム砒素半導体メモリ集積回路
EP0524924A1 (en) MEMORY CELL HAVING ACTIVE WRITE CHARGE.
JPH03228292A (ja) ガリウム砒素半導体記憶装置
JPH01138748A (ja) ガリウム砒素半導体メモリ集積回路
GB2196199A (en) Associative memory cells
JPH01253957A (ja) ガリウム砒素半導体メモリ集積回路

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term