JPH0122730B2 - - Google Patents
Info
- Publication number
- JPH0122730B2 JPH0122730B2 JP58111172A JP11117283A JPH0122730B2 JP H0122730 B2 JPH0122730 B2 JP H0122730B2 JP 58111172 A JP58111172 A JP 58111172A JP 11117283 A JP11117283 A JP 11117283A JP H0122730 B2 JPH0122730 B2 JP H0122730B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- glow discharge
- cathode
- uniform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58111172A JPS603128A (ja) | 1983-06-21 | 1983-06-21 | プラズマ酸化装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58111172A JPS603128A (ja) | 1983-06-21 | 1983-06-21 | プラズマ酸化装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS603128A JPS603128A (ja) | 1985-01-09 |
| JPH0122730B2 true JPH0122730B2 (enrdf_load_stackoverflow) | 1989-04-27 |
Family
ID=14554303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58111172A Granted JPS603128A (ja) | 1983-06-21 | 1983-06-21 | プラズマ酸化装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603128A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07118522B2 (ja) * | 1990-10-24 | 1995-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 基板表面を酸化処理するための方法及び半導体の構造 |
| JP2008115422A (ja) * | 2006-11-02 | 2008-05-22 | Parker Netsu Shori Kogyo Kk | プラズマ窒化装置および窒化方法 |
-
1983
- 1983-06-21 JP JP58111172A patent/JPS603128A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS603128A (ja) | 1985-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3616403A (en) | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz | |
| US3763026A (en) | Method of making resistor thin films by reactive sputtering from a composite source | |
| US4393434A (en) | Capacitance humidity sensor | |
| JPH0122730B2 (enrdf_load_stackoverflow) | ||
| JPS6410109B2 (enrdf_load_stackoverflow) | ||
| FR2557149A1 (fr) | Procede et dispositif pour le depot, sur un support, d'une couche mince d'un materiau a partir d'un plasma reactif | |
| JPH0649936B2 (ja) | バイアススパツタリング装置 | |
| JPS622544A (ja) | 無声放電型ガスプラズマ処理装置 | |
| JPH0561350B2 (enrdf_load_stackoverflow) | ||
| JP2926711B2 (ja) | ドライエッチング装置 | |
| JP3508651B2 (ja) | 電界放射型電子源およびその製造方法 | |
| JP3259452B2 (ja) | プラズマcvd装置に用いる電極及びプラズマcvd装置 | |
| JPS57153436A (en) | Semiconductor device | |
| JPS6227568A (ja) | スパツタリング装置 | |
| JPH029549Y2 (enrdf_load_stackoverflow) | ||
| JPS6086277A (ja) | 放電による堆積膜の形成方法 | |
| JPH05163575A (ja) | 薄膜の形成方法 | |
| JP2890032B2 (ja) | シリコン薄膜の成膜方法 | |
| JP2001354491A (ja) | ダイヤモンド成長方法及びダイヤモンド成長装置 | |
| JPH0454Y2 (enrdf_load_stackoverflow) | ||
| JPH01185918A (ja) | 半導体基体への不純物導入装置 | |
| JP3396395B2 (ja) | アモルファス半導体薄膜の製造装置 | |
| JPH0228892B2 (enrdf_load_stackoverflow) | ||
| TW497133B (en) | Device and method for preventing over-thick film deposition on the edge of a wafer | |
| JPH02105527A (ja) | プラズマcvd装置 |