JPH0122725B2 - - Google Patents

Info

Publication number
JPH0122725B2
JPH0122725B2 JP10192284A JP10192284A JPH0122725B2 JP H0122725 B2 JPH0122725 B2 JP H0122725B2 JP 10192284 A JP10192284 A JP 10192284A JP 10192284 A JP10192284 A JP 10192284A JP H0122725 B2 JPH0122725 B2 JP H0122725B2
Authority
JP
Japan
Prior art keywords
pattern
patterns
exposure amount
independent
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10192284A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60245226A (ja
Inventor
Takeshi Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP59101922A priority Critical patent/JPS60245226A/ja
Publication of JPS60245226A publication Critical patent/JPS60245226A/ja
Publication of JPH0122725B2 publication Critical patent/JPH0122725B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP59101922A 1984-05-21 1984-05-21 パタ−ン形成方法 Granted JPS60245226A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59101922A JPS60245226A (ja) 1984-05-21 1984-05-21 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59101922A JPS60245226A (ja) 1984-05-21 1984-05-21 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS60245226A JPS60245226A (ja) 1985-12-05
JPH0122725B2 true JPH0122725B2 (enrdf_load_stackoverflow) 1989-04-27

Family

ID=14313399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59101922A Granted JPS60245226A (ja) 1984-05-21 1984-05-21 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS60245226A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8502624A (nl) * 1985-09-26 1987-04-16 Philips Nv Werkwijze voor het bepalen van de belichtingsdosis van een lichtgevoelige laklaag.

Also Published As

Publication number Publication date
JPS60245226A (ja) 1985-12-05

Similar Documents

Publication Publication Date Title
DE102006017938B4 (de) Fokusüberwachungsverfahren, Photomaske und photolithographisches System
US6458606B2 (en) Etch bias distribution across semiconductor wafer
WO2003043075A1 (en) Method and apparatus for the production of process sensitive lithographic features
JP2000003028A (ja) マスクパタ―ン補正システムとその補正方法
US7563547B2 (en) Photomask and method of manufacturing the same
CN109164678B (zh) 改善高深宽比图形不一致和提高光刻胶形貌陡度的方法
US6741334B2 (en) Exposure method, exposure system and recording medium
US4397543A (en) Mask for imaging a pattern of a photoresist layer, method of making said mask, and use thereof in a photolithographic process
US5723238A (en) Inspection of lens error associated with lens heating in a photolithographic system
JPH0122725B2 (enrdf_load_stackoverflow)
JP2000138160A (ja) X線露光方法および該方法用x線マスク構造体
KR20090069095A (ko) 반도체 소자 형성 방법
JP2797362B2 (ja) 半導体装置のパターン形成方法
JPH09270379A (ja) フォーカス評価用レチクルおよびフォーカス評価方法
JPH0448715A (ja) 半導体装置の製造方法
US5616438A (en) Reticle and a method for measuring blind setting accuracy using the same
JPS59155839A (ja) パタ−ン転写用マスク
JP2788822B2 (ja) ホトマスク
JPH0619115A (ja) 投影露光装置用マスク
US5373232A (en) Method of and articles for accurately determining relative positions of lithographic artifacts
CN118838127B (en) Method for measuring photoresist fading amount and optical proximity correction method
JPS63275115A (ja) 半導体装置のパタ−ン形成方法
JPH05232675A (ja) ホトマスク及びそれを用いたレジストパターン形成方法
KR19990070859A (ko) 오버레이 측정 타겟 및 이의 제조방법
JPS62299969A (ja) フオトマスク