JPH01223725A - Evaluation of film thickness of semiconductor device - Google Patents
Evaluation of film thickness of semiconductor deviceInfo
- Publication number
- JPH01223725A JPH01223725A JP5006188A JP5006188A JPH01223725A JP H01223725 A JPH01223725 A JP H01223725A JP 5006188 A JP5006188 A JP 5006188A JP 5006188 A JP5006188 A JP 5006188A JP H01223725 A JPH01223725 A JP H01223725A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- crystal substrate
- growth layer
- layer
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000011156 evaluation Methods 0.000 title description 3
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 2
- 150000004767 nitrides Chemical group 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の膜厚評価方法に関し、特にエピタ
キシャル成長層の膜厚評価方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for evaluating the thickness of a semiconductor device, and particularly to a method of evaluating the thickness of an epitaxially grown layer.
従来、エピタキシャル成長層の膜厚評価方法としては、
不純物高濃度層での赤外線の反射を利用した赤外分光法
や、半導体単結晶基板を襞間し各種のエツチング液によ
ってエピタキシャル成長層の境界を出す方法、さらに、
広がり抵抗法などがある。Conventionally, the film thickness evaluation method for epitaxial growth layers is as follows:
Infrared spectroscopy uses reflection of infrared rays from a layer with high impurity concentration, a method of folding a semiconductor single crystal substrate and using various etching solutions to define the boundaries of epitaxially grown layers, and
There are spread resistance methods, etc.
上述した従来のエピタキシャル成長層の膜厚測定方法の
うち、赤外分光法は第１にエピタキシャル成長層界面に
不純物高濃度層を有していないものは測定不可能であり
、第２に赤外分光法の測定限界は約０．５μｍ〜１．０
μｍであり、半導体装置の高速化に伴なうエピタキシャ
ル成長層の薄膜化への要求に十分応えることができない
という欠点がある。また、半導体単結晶基板を襞開し各
種のエツチング液によってエピタキシャル成長層の境界
を出す方法や、広がり抵抗法は半導体単結晶基板を完全
に破壊したければ測定できないという欠点がある。さら
に、広がり抵抗法に於ける測定限界も約０．５μｍであ
り、エピタキシャル成長層の薄膜化への要求に十分応え
ることができない。Among the conventional methods for measuring the thickness of an epitaxially grown layer described above, infrared spectroscopy is firstly impossible to measure a layer that does not have a high impurity concentration layer at the interface of the epitaxially grown layer; The measurement limit is approximately 0.5 μm to 1.0
.mu.m, and has the disadvantage that it cannot sufficiently meet the demand for thinner epitaxial growth layers as semiconductor devices become faster. Furthermore, the method of folding open the semiconductor single crystal substrate and using various etching solutions to define the boundaries of the epitaxially grown layer, and the spreading resistance method have the disadvantage that measurements cannot be made if the semiconductor single crystal substrate is to be completely destroyed. Furthermore, the measurement limit in the spreading resistance method is also about 0.5 μm, which cannot sufficiently meet the demand for thinning of the epitaxially grown layer.
本発明の半導体装置の膜厚評価方法は、半導体単結晶基
板上に形成されたエピタキシャル成長層の所定領域に半
導体単結晶基板表面まで達する段を形成し、エピタキシ
ャル成長層表面と半導体単結晶基板表面との該段差を測
定することによりエピタキシャル成長層の膜厚を評価す
ることを特徴とする。The film thickness evaluation method for a semiconductor device of the present invention includes forming a step reaching the surface of the semiconductor single crystal substrate in a predetermined region of an epitaxial growth layer formed on a semiconductor single crystal substrate, and forming a step between the surface of the epitaxial growth layer and the surface of the semiconductor single crystal substrate. The method is characterized in that the thickness of the epitaxially grown layer is evaluated by measuring the step difference.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）乃至（ｇ）は本発明の一実施例を示す半導
体装置の評価方法を示す工程順縦断面図である。先ず第
１図（ａ）に示すように、シリコン単結晶基板２１の表
面に例えば約５００〜６００人の酸化膜２２を堆積させ
る。次に第１図（ｂ）に示すように、例えば約５ｍｍ口
の酸化膜領域２３を残して池の酸化膜をフォトリソグラ
フィーによって除去する。次に第１図（Ｃ）に示すよう
に、エピタキシャル成長層２４を形成する。この次シリ
コン単結晶基板２１の上にはエピタキシャル成長層２４
が形成され、酸化膜２３の上には多結晶シリコン層２５
が形成される。次に第１図（ｄ）に示すように、エピタ
キシャル成長層２４０表面のみフォトレジスト２６で覆
う。次に第１図（ｅ）に示すように、多結晶シリコン層
２５を例えば弗酸と硝酸との混合液で除去する。次に第
１図（「）に示すように、酸化膜２３を例えば弗化アン
モニウムと弗酸と水の混合液にて除去する。次に第１図
（ｇ）に示すように、フォトレジスト２６を例えばプラ
ズマによって剥離する。このようにしてエピタキシャル
成長層２４の所定領域にシリコン単結晶基板２１の表面
まで達する段２７を形成することができる。この段２７
の高さを例えば段差測定器で測定すれば該測定値がその
ままエピタキシャル成長層の膜厚となりエピタキシャル
成長層の膜厚を知ることができる。FIGS. 1(a) to 1(g) are vertical cross-sectional views in the order of steps showing a method for evaluating a semiconductor device according to an embodiment of the present invention. First, as shown in FIG. 1(a), an oxide film 22 of, for example, about 500 to 600 layers is deposited on the surface of a silicon single crystal substrate 21. Then, as shown in FIG. Next, as shown in FIG. 1(b), the oxide film of the pond is removed by photolithography, leaving an oxide film region 23 of about 5 mm in diameter, for example. Next, as shown in FIG. 1(C), an epitaxial growth layer 24 is formed. Next, an epitaxial growth layer 24 is formed on the silicon single crystal substrate 21.
is formed, and a polycrystalline silicon layer 25 is formed on the oxide film 23.
is formed. Next, as shown in FIG. 1(d), only the surface of the epitaxial growth layer 240 is covered with a photoresist 26. Then, as shown in FIG. Next, as shown in FIG. 1(e), the polycrystalline silicon layer 25 is removed using, for example, a mixed solution of hydrofluoric acid and nitric acid. Next, as shown in FIG. 1(g), the oxide film 23 is removed using, for example, a mixture of ammonium fluoride, hydrofluoric acid, and water.Next, as shown in FIG. 1(g), the photoresist 23 is removed. For example, it is peeled off by plasma. In this way, a step 27 reaching the surface of the silicon single crystal substrate 21 can be formed in a predetermined region of the epitaxial growth layer 24. This step 27
If the height of the epitaxial layer is measured using, for example, a step measuring device, the measured value becomes the thickness of the epitaxially grown layer, and the thickness of the epitaxially grown layer can be determined.
本発明の他の実施例として該−実施例の第１図（ａ）に
示す酸化膜２２を窒化膜に置き換えた場合について述べ
る。酸化膜を窒化膜にすることによりエピタキシャル成
長での水素ベークにより酸化膜２３がエツチングされて
膜厚が薄くなるエツチングの影響を受けることがなくな
る為窒化膜の膜厚を例えば〜１００人まで薄くすること
が可能であり、その後の窒化膜の除去が容易になるとい
う利点がある。As another embodiment of the present invention, a case will be described in which the oxide film 22 shown in FIG. 1(a) of this embodiment is replaced with a nitride film. By changing the oxide film to a nitride film, the oxide film 23 is not affected by etching, which occurs when the oxide film 23 is etched and thinned by hydrogen baking during epitaxial growth, so the thickness of the nitride film can be reduced to, for example, ~100 nm. This has the advantage that subsequent removal of the nitride film becomes easy.
以上説明したように本発明は、半導体単結晶基板上に形
成されたエピタキシャル成長層の所定領域に、半導体単
結晶基板表面を底面とする段を形成することにより、エ
ピタキシャル成長層表面と半導体単結晶基板表面との段
差を測定することができるので、半導体装置を破壊する
ことなく数人までのエピタキシャル成長層の膜厚を知る
ことができる効果がある。As explained above, the present invention forms a step with the surface of the semiconductor single crystal substrate as the bottom surface in a predetermined region of the epitaxial growth layer formed on the semiconductor single crystal substrate. Since it is possible to measure the height difference between the two layers, it is possible to determine the thickness of up to several epitaxially grown layers without destroying the semiconductor device.
第１図は本発明の一実施例を示す工程順縦断面図である
。
２１・・・・・・シリコン単結晶基板、２２・・・・・
・酸化膜、２３・・・・・・分離された酸化膜領域、２
４・・・・・・エピタキシャル成長層、２５・・・・・
・多結晶シリコン層、２６・・・・・・フォトレジスト
、２７・・・・・・シリコン単結晶基板に達する段。
代理人 弁理士 内 原 ヨ
と（１） Ｚ／
？３
（ｂ） ；：ｙ
冬１
と’、Ｊ） ｚ／
〆図FIG. 1 is a vertical cross-sectional view in order of steps showing an embodiment of the present invention. 21...Silicon single crystal substrate, 22...
- Oxide film, 23... Separated oxide film region, 2
4...Epitaxial growth layer, 25...
- Polycrystalline silicon layer, 26... photoresist, 27... stage reaching silicon single crystal substrate. Agent Patent Attorney Yoto Uchihara (1) Z/? 3 (b) ;:y winter 1 and', J) z/ 〆Fig.
Claims (1)
長層の所定領域に半導体単結晶基板表面まで達する段を
形成し、エピタキシャル成長層表面と半導体単結晶基板
表面との該段差を測定することによりエピタキシャル成
長層の膜厚を評価することを特徴とする半導体装置の膜
厚評価方法。The thickness of the epitaxial growth layer is determined by forming a step reaching the surface of the semiconductor single crystal substrate in a predetermined region of the epitaxial growth layer formed on the semiconductor single crystal substrate, and measuring the step difference between the surface of the epitaxial growth layer and the surface of the semiconductor single crystal substrate. 1. A method for evaluating film thickness of a semiconductor device, the method comprising evaluating the film thickness of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5006188A JPH01223725A (en) | 1988-03-02 | 1988-03-02 | Evaluation of film thickness of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5006188A JPH01223725A (en) | 1988-03-02 | 1988-03-02 | Evaluation of film thickness of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01223725A true JPH01223725A (en) | 1989-09-06 |
Family
ID=12848485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5006188A Pending JPH01223725A (en) | 1988-03-02 | 1988-03-02 | Evaluation of film thickness of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01223725A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1739056A2 (en) * | 2005-06-29 | 2007-01-03 | Honeywell International, Inc. | Systems and methods for direct silicon epitaxy thickness measuring |
| CN107611048A (en) * | 2017-08-31 | 2018-01-19 | 长江存储科技有限责任公司 | A kind of monitoring method of epitaxial structures growth technique |
-
1988
- 1988-03-02 JP JP5006188A patent/JPH01223725A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1739056A2 (en) * | 2005-06-29 | 2007-01-03 | Honeywell International, Inc. | Systems and methods for direct silicon epitaxy thickness measuring |
| EP1739056A3 (en) * | 2005-06-29 | 2008-01-23 | Honeywell International, Inc. | Systems and methods for direct silicon epitaxy thickness measuring |
| CN107611048A (en) * | 2017-08-31 | 2018-01-19 | 长江存储科技有限责任公司 | A kind of monitoring method of epitaxial structures growth technique |
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