JPH04148546A - Beam dimension measurement element and its manufacture - Google Patents
Beam dimension measurement element and its manufactureInfo
- Publication number
- JPH04148546A JPH04148546A JP27385190A JP27385190A JPH04148546A JP H04148546 A JPH04148546 A JP H04148546A JP 27385190 A JP27385190 A JP 27385190A JP 27385190 A JP27385190 A JP 27385190A JP H04148546 A JPH04148546 A JP H04148546A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon oxide
- oxide film
- silicon substrate
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000005259 measurement Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はビーム寸法測定用素子およびその製造方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a beam dimension measuring element and a method for manufacturing the same.
従来のビーム寸法測定用素子としては１９９０年（平成
２年）春季第３７回応用物理学関連連合講演会予稿集、
第２分冊、第４５３頁、２８ｐ−ＺＥ−１０に記載され
ているように、シリコン単結晶によるナイフェツジを使
用して透過電流を測定するものが用いられている。Conventional beam dimension measurement elements include the Proceedings of the 37th Applied Physics Related Union Lectures, Spring 1990;
As described in Vol. 2, p. 453, 28p-ZE-10, a device is used that measures the transmitted current using a knife made of silicon single crystal.
電子線リソグラフィ技術ではビーム寸法の高さ方向の変
動を測定し、描画時にウェハーの高さ変動に応じてビー
ム寸法を補正する必要がある。In electron beam lithography technology, it is necessary to measure variations in beam dimensions in the height direction and to correct beam dimensions according to variations in wafer height during writing.
しかしながら、従来のビーム寸法測定用素子では２個の
シリコン単結晶ナイフェツジを上面の高さを変えてホル
ダーに取り付けていたため、２個のナイフェツジの平行
度がホルダーの機械的精度によって制約をうける事から
、ビーム寸法の高さ方向の変動を正確に測定できないと
いう問題があった。However, in the conventional beam dimension measuring element, two silicon single crystal knives were attached to a holder with different heights of the top surface, so the parallelism of the two knives was limited by the mechanical precision of the holder. However, there was a problem in that it was not possible to accurately measure variations in beam dimensions in the height direction.
本発明の目的は同一単結晶シリコン基板上に高さの異な
るナイフェツジを形成することにより、２個のナイフェ
ツジ間の平行度を飛躍的に向上させたビーム測定用素子
を提供することにある。An object of the present invention is to provide a beam measuring element in which the parallelism between two knives is dramatically improved by forming knives of different heights on the same single crystal silicon substrate.
本発明のビーム寸法測定用素子は、単結晶シリコン基板
の上面に設けた高さの異なる（１００）面からなる複数
の平面と、前記平面の夫々に設けて前記単結晶シリコン
基板を貫通し且つ上面側で狭く下面側で広い（１１１）
面の内側面を有する開口部の上端に形成したナイフェツ
ジと、前記単結晶シリコン基板の上面に設けた金属層と
を有する。The beam dimension measuring element of the present invention has a plurality of planes formed of (100) planes having different heights provided on the upper surface of a single crystal silicon substrate, and a beam size measuring element provided on each of the planes and penetrating the single crystal silicon substrate. Narrow on the top side and wide on the bottom side (111)
The semiconductor device has a knife formed at the upper end of the opening having an inner surface, and a metal layer provided on the upper surface of the single crystal silicon substrate.
本発明のビーム寸法測定用素子の製造方法は、（１００
）面を主面とする単結晶シリコン基板の上面を選択的に
エツチングして段差を設け高さの異なる（１００）面の
複数の平面を設ける工程と、前記単結晶シリコン基板の
表面を熱酸化して前記単結晶シリコン基板の上面及び下
面に酸化シリコン膜を形成し前記下面の酸化シリコン膜
を選択的にエツチングして除去する工程と、前記酸化シ
リコン膜をマスクとして前記単結晶シリコン基板をエツ
チングし、前記下面から上面の異なる高さの平面の酸化
シリコン膜の夫々に達し且つ下面側で広く上面側で狭い
（１１１）面の傾斜した内側面を有する開口部を設けて
、前記開口部の上端にナイフェツジを形成する工程と、
前記酸化シリコン膜を除去した後前記ナイフェツジを含
む単結晶シリコン基板の上面に金属層を設ける工程とを
含んで構成される。The method for manufacturing a beam size measuring element of the present invention includes (100
) is the main surface of the single-crystal silicon substrate by selectively etching the top surface of the single-crystal silicon substrate to form a step to provide a plurality of (100) planes having different heights, and thermally oxidizing the surface of the single-crystal silicon substrate. forming a silicon oxide film on the upper and lower surfaces of the single crystal silicon substrate and selectively etching and removing the silicon oxide film on the lower surface; etching the single crystal silicon substrate using the silicon oxide film as a mask; Then, an opening is provided that reaches each of the plane silicon oxide films at different heights from the lower surface to the upper surface and has an inclined inner surface of a (111) plane that is wide on the lower surface side and narrow on the upper surface side. a step of forming a knife at the upper end;
After the silicon oxide film is removed, a metal layer is provided on the upper surface of the single crystal silicon substrate including the knife.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ）〜（ｋ）は本発明の一実施例を説明するた
めの工程順に示したビーム寸法測定素子の断面図である
。FIGS. 1(a) to 1(k) are cross-sectional views of a beam size measuring element shown in the order of steps for explaining one embodiment of the present invention.
第１図（ａ）に示すように、（１００）面で厚さ１ｍｍ
の単結晶シリコン基板１の上面及び下面に酸化シリコン
膜２を０．１μｍの厚さに形成する。As shown in Figure 1(a), the thickness is 1 mm on the (100) plane.
A silicon oxide film 2 is formed to a thickness of 0.1 μm on the upper and lower surfaces of a single crystal silicon substrate 1 .
次に、第１図（ｂ）に示すように、単結晶シリコン基板
１の上面にフォトレジスト膜３を１μｍの厚さにスピン
法で塗布し、選択的に露光し、現像してパターニングす
る。Next, as shown in FIG. 1(b), a photoresist film 3 is applied to the upper surface of the single crystal silicon substrate 1 to a thickness of 1 μm by a spin method, selectively exposed, developed, and patterned.
次に、第１図（Ｃ）に示すように、フォトレジスト膜３
をマスクとして下地の酸化シリコンＭ！Ｉ２をドライエ
ツチングし単結晶シリコン基板１の表面を露出する。Next, as shown in FIG. 1(C), the photoresist film 3
Use this as a mask to apply silicon oxide M! I2 is dry etched to expose the surface of single crystal silicon substrate 1.
次に、第１図（ｄ）に示すように、フォトレジスト膜３
を剥離した後、酸化シリコン膜２をマスクとして単結晶
シリコン基板１の表面をＫＯＨ水溶液で深さ１００μｍ
だけ異方性エツチングし段差部を設ける。Next, as shown in FIG. 1(d), the photoresist film 3
After peeling off, the surface of the single crystal silicon substrate 1 is coated with a KOH aqueous solution to a depth of 100 μm using the silicon oxide film 2 as a mask.
A stepped portion is provided by anisotropic etching.
次に、第１図（ｅ）に示すように、酸化シリコン膜２を
除去して単結晶シリコン基板１の表面を露出させる。Next, as shown in FIG. 1(e), the silicon oxide film 2 is removed to expose the surface of the single crystal silicon substrate 1.
次に、第１図（ｆ）に示すように、単結晶シリコン基板
１の全表面に酸化シリコン膜４を０．１μｍの厚さに形
成する。Next, as shown in FIG. 1(f), a silicon oxide film 4 is formed on the entire surface of the single crystal silicon substrate 1 to a thickness of 0.1 μm.
次に、第１図（ｇ）に示すように、単結晶シリコン基板
ｌの下面にフォトレジストＭ５を１μｍの厚さに塗布し
て選択的に露光し、現像してパタニングする。Next, as shown in FIG. 1(g), a photoresist M5 is applied to a thickness of 1 μm on the lower surface of the single crystal silicon substrate l, selectively exposed, developed and patterned.
次に、第１図（ｈ）に示すように、フォトレジスト膜５
をマスクとして下地の酸化シリコン１１４をドライエツ
チングする。Next, as shown in FIG. 1(h), the photoresist film 5
Using this as a mask, the underlying silicon oxide 114 is dry etched.
次に、第１図（ｉ）に示すように、フォトレジスト膜５
を除去した後、酸化シリコン膜４をマスクとして、単結
晶シリコン基板１を（１１１）面に沿ってエツチングし
、上面の酸化シリコン膜４に達し且つ上面側で狭く下面
側で広くなる傾斜面を有する開口部６を設ける。Next, as shown in FIG. 1(i), the photoresist film 5
After removing the silicon oxide film 4, the single crystal silicon substrate 1 is etched along the (111) plane using the silicon oxide film 4 as a mask to form an inclined surface that reaches the silicon oxide film 4 on the upper surface and becomes narrower on the upper surface side and wider on the lower surface side. An opening 6 is provided.
次に、第１図（ｊ）に示すように、酸化シリコン膜２を
除去する。Next, as shown in FIG. 1(j), the silicon oxide film 2 is removed.
次に、第１図（ｋ）に示すように、単結晶シリコン基板
１の上面に金層７をスパッタして０．５μｍの厚さに堆
積し、ナイフェツジを構成する。Next, as shown in FIG. 1(k), a gold layer 7 is deposited on the upper surface of the single crystal silicon substrate 1 by sputtering to a thickness of 0.5 μm to form a knife.
以上説明したように本発明は、高い面のナイフェツジと
低い面のナイフェツジが同一の単結晶シリコン基板内に
形成できるので、ふたつのナイフェツジの平行度がシリ
コンの原子サイズレベルで向上する。これにより、ビー
ム寸法の高さ方向の変動を正確に測定することが可能に
なり、ウェハー面の高さ変動に対応してビーム寸法を精
度良く補正することが可能になるという効果を有する。As explained above, in the present invention, since the knife on the high plane and the knife on the low plane can be formed in the same single crystal silicon substrate, the parallelism of the two knives is improved at the silicon atomic size level. This has the effect that it becomes possible to accurately measure variations in beam dimensions in the height direction, and it becomes possible to accurately correct beam dimensions in response to variations in height of the wafer surface.
第１図（ａ）〜（ｋ）は本発明の一実施例を説明するた
めの工程順に示したビーム寸法測定用素子の断面図であ
る。
１・・・単結晶シリコン基板、２・・・酸化シリコン膜
、３・・・フォトレジスト膜、４・・・酸化シリコン膜
、５・・・フォトレジスト膜、６・・・開口部、７・・
・金層。FIGS. 1(a) to 1(k) are cross-sectional views of a beam dimension measuring element shown in order of steps for explaining an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Single crystal silicon substrate, 2... Silicon oxide film, 3... Photoresist film, 4... Silicon oxide film, 5... Photoresist film, 6... Opening, 7...・
・Gold layer.
Claims (1)
１００）面からなる複数の平面と、前記平面の夫々に設
けて前記単結晶シリコン基板を貫通し且つ上面側で狭く
下面側で広い（１１１）面の内側面を有する開口部の上
端に形成したナイフエッジと、前記単結晶シリコン基板
の上面に設けた金属層とを有することを特徴とするビー
ム寸法測定用素子。 ２、（１００）面を主面とする単結晶シリコン基板の上
面を選択的にエッチングして段差を設け高さの異なる（
１００）面の複数の平面を設ける工程と、前記単結晶シ
リコン基板の表面を熱酸化して前記単結晶シリコン基板
の上面及び下面に酸化シリコン膜を形成し前記下面の酸
化シリコン膜を選択的にエッチングして除去する工程と
、前記酸化シリコン膜をマスクとして前記単結晶シリコ
ン基板をエッチングし、前記下面から上面の異なる高さ
の平面の酸化シリコン膜の夫々に達し且つ下面側で広く
上面側で狭い（１１１）面の傾斜した内側面を有する開
口部を設けて前記開口部の上端にナイフエッジを形成す
る工程と、前記酸化シリコン膜を除去した後前記ナイフ
エッジを含む単結晶シリコン基板の上面に金属層を設け
る工程とを含むことを特徴とするビーム寸法測定用素子
の製造方法。[Claims] 1. Different heights (
100) planes, and each of the planes is provided at the upper end of an opening that penetrates the single crystal silicon substrate and has an inner surface of a (111) plane that is narrower on the upper surface side and wider on the lower surface side. A beam dimension measuring element comprising a knife edge and a metal layer provided on the upper surface of the single crystal silicon substrate. 2. Selectively etching the top surface of a single-crystal silicon substrate with the (100) plane as the main surface to create steps with different heights (
100) A step of providing a plurality of planes, thermally oxidizing the surface of the single crystal silicon substrate to form a silicon oxide film on the upper and lower surfaces of the single crystal silicon substrate, and selectively removing the silicon oxide film on the lower surface. etching and removing the silicon oxide film, using the silicon oxide film as a mask, etching the single crystal silicon substrate to reach each of the silicon oxide films at different heights from the bottom surface to the top surface, and widening the silicon oxide film from the bottom surface side to the top surface side; a step of providing an opening having a narrow (111) inclined inner surface and forming a knife edge at the upper end of the opening; and after removing the silicon oxide film, removing the upper surface of the single crystal silicon substrate including the knife edge; A method of manufacturing a beam dimension measuring element, comprising the step of: providing a metal layer on the beam size measuring element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27385190A JPH04148546A (en) | 1990-10-12 | 1990-10-12 | Beam dimension measurement element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27385190A JPH04148546A (en) | 1990-10-12 | 1990-10-12 | Beam dimension measurement element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04148546A true JPH04148546A (en) | 1992-05-21 |
Family
ID=17533439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27385190A Pending JPH04148546A (en) | 1990-10-12 | 1990-10-12 | Beam dimension measurement element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04148546A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19880398B4 (en) * | 1997-02-27 | 2008-09-04 | Sony Corp. | Substrate temperature measuring instrument with substrate heating method and heat treatment device - heats substrate by light, uses thermocouple with cover partly of high heat- and partly of high light-conductivity materials |
| US9240306B2 (en) | 2012-01-24 | 2016-01-19 | Mapper Lithography Ip B.V. | Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device |
| RU2676240C1 (en) * | 2018-01-25 | 2018-12-26 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Method of formation of microstructural devices with cross-metalized holes on single crystalline silicon surface |
-
1990
- 1990-10-12 JP JP27385190A patent/JPH04148546A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19880398B4 (en) * | 1997-02-27 | 2008-09-04 | Sony Corp. | Substrate temperature measuring instrument with substrate heating method and heat treatment device - heats substrate by light, uses thermocouple with cover partly of high heat- and partly of high light-conductivity materials |
| US9240306B2 (en) | 2012-01-24 | 2016-01-19 | Mapper Lithography Ip B.V. | Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device |
| RU2676240C1 (en) * | 2018-01-25 | 2018-12-26 | Акционерное общество "Российская корпорация ракетно-космического приборостроения и информационных систем" (АО "Российские космические системы") | Method of formation of microstructural devices with cross-metalized holes on single crystalline silicon surface |
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