JPH02105438A - Measurement of film thickness of epitaxial growth layer - Google Patents
Measurement of film thickness of epitaxial growth layerInfo
- Publication number
- JPH02105438A JPH02105438A JP25867088A JP25867088A JPH02105438A JP H02105438 A JPH02105438 A JP H02105438A JP 25867088 A JP25867088 A JP 25867088A JP 25867088 A JP25867088 A JP 25867088A JP H02105438 A JPH02105438 A JP H02105438A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- growth layer
- semiconductor substrate
- difference
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000005530 etching Methods 0.000 description 5
- 238000004566 IR spectroscopy Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はエピタキシャル成長層の膜厚測定方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for measuring the thickness of an epitaxially grown layer.
従来、半導体基板上に形成されたエピタキシャル成長層
の膜厚測定方法としては、半導体基板とエピタキシャル
成長層間に形成された不純物高濃度層での赤外線の反射
を利用した赤外線分光法や、半導体基板を襞間し各種の
エツチング液によってエピタキシャル成長層と半導体基
板との境界を表出させる方法、さらに広がり抵抗法など
が用いられている。Conventionally, methods for measuring the thickness of an epitaxially grown layer formed on a semiconductor substrate include infrared spectroscopy, which utilizes the reflection of infrared rays from a high-concentration impurity layer formed between the semiconductor substrate and the epitaxially grown layer, and methods for measuring the thickness of an epitaxially grown layer formed on a semiconductor substrate. However, a method in which the boundary between the epitaxial growth layer and the semiconductor substrate is exposed using various etching solutions, and a spread resistance method are also used.
上述した従来のエピタキシャル成長層の膜厚測定方法の
うち、赤外線分光法は、第１にエピタキシャル成長層と
半導体基板との界面に不純物高濃度層を有していないも
のは測定不可能である。第２に赤外線分光法の測定限界
は約０，５μｍであり、半導体装置の高速化に伴うエピ
タキシャル成長層の薄膜化への要求に十分応えることが
できないという欠点がある。Among the conventional methods for measuring the thickness of an epitaxially grown layer described above, infrared spectroscopy cannot measure a layer that does not have a high impurity concentration layer at the interface between the epitaxially grown layer and the semiconductor substrate. Second, the measurement limit of infrared spectroscopy is approximately 0.5 μm, and there is a drawback that it cannot sufficiently meet the demand for thinner epitaxial growth layers as semiconductor devices increase in speed.
また、半導体基板を襞間し、各種のエツチング液によっ
てエピタキシャル成長層と半導体基板との境界を表出さ
せる方法や広がり抵抗法は、半導体基板を完全に破壊し
なければならないという欠点がある。さらにこのエツチ
ングによる方法は精度が悪く、広がり抵抗法の測定限界
も約０，５μｍであり、エピタキシャル成長層の１膜化
への要求に十分応えることができない。Further, the method of folding the semiconductor substrate and exposing the boundary between the epitaxial growth layer and the semiconductor substrate using various etching solutions, and the spreading resistance method have the disadvantage that the semiconductor substrate must be completely destroyed. Furthermore, this etching method has poor accuracy, and the measurement limit of the spread resistance method is about 0.5 μm, and cannot satisfactorily meet the demand for a single epitaxial growth layer.
本発明のエピタキシャル成長層の膜厚測定方法は、半導
体基板上に選択的に絶縁膜を形成する工程と、選択エピ
タキシャル成長法により前記半導体基板上にエピタキシ
ャル成長層を形成する工程と、エピタキシャル成長層が
形成された前記半導体基板上の前記絶縁膜を除去して半
導体基板表面を露出する工程と、露出した前記半導体基
板表面と前記エピタキシャル成長層表面との段差を測定
する工程とを含んで構成される。The method for measuring the thickness of an epitaxially grown layer of the present invention includes a step of selectively forming an insulating film on a semiconductor substrate, a step of forming an epitaxially grown layer on the semiconductor substrate by a selective epitaxial growth method, and a step of forming an epitaxially grown layer on the semiconductor substrate by a selective epitaxial growth method. The method includes a step of removing the insulating film on the semiconductor substrate to expose the surface of the semiconductor substrate, and a step of measuring a step difference between the exposed surface of the semiconductor substrate and the surface of the epitaxial growth layer.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）〜（ｄ）は本発明の一実施例を説明するた
めの工程順に示した半導体チップの断面図である。FIGS. 1(a) to 1(d) are cross-sectional views of a semiconductor chip shown in the order of steps for explaining one embodiment of the present invention.
先ず第１図（ａ）に示すように、シリコン基板１２の表
面に厚さ５００〜６００人の酸化膜１１を堆積させる。First, as shown in FIG. 1(a), an oxide film 11 having a thickness of 500 to 600 layers is deposited on the surface of a silicon substrate 12.
次に第１図（ｂ）に示すように、約５Ｘ５ｍｎｌの酸化
ｆｊＡ１１Ａを残して他の酸化ｆｉ１．１をフォトリソ
グラフィーによって除去する。Next, as shown in FIG. 1(b), the remaining oxidized fi1.1 is removed by photolithography, leaving about 5×5 mnl of oxidized fjA11A.
次に第１図（Ｃ）に示すように、例えば水素ガス１８０
Ｓ Ｌ Ｍ 、ジクロルシランガス３００３ＣＣＭ、
塩素ガス１．３ＳＬＭ、温度９５０°Ｃ１圧力６７０Ｐ
ａの条件で選択エピタキシャル成長を行ない、シリコン
基板１２の上にエピタキシャル成長層１４を形成させる
。この時分離された酸化膜１１Ａの上にはエピタキシャ
ル成長層は形成されない。Next, as shown in FIG. 1(C), for example, hydrogen gas 180
S L M, dichlorosilane gas 3003CCM,
Chlorine gas 1.3SLM, temperature 950°C, pressure 670P
Selective epitaxial growth is performed under the conditions a to form an epitaxial growth layer 14 on the silicon substrate 12. No epitaxial growth layer is formed on the oxide film 11A separated at this time.
次に第１図（ｄ）に示すように、分離された酸化膜１１
Ａを弗酸と弗化アンモニウムと水の混合液でエツチング
除去し、シリコン基板１２の表面にまで達する段部１５
を形成する。Next, as shown in FIG. 1(d), the separated oxide film 11
A is removed by etching with a mixture of hydrofluoric acid, ammonium fluoride, and water to form a stepped portion 15 that reaches the surface of the silicon substrate 12.
form.
次にこの段部１５における段差を、例えば段差測定器で
測定し、エピタキシャル成長層１４の膜厚を求める。こ
の段差測定器は数人の段差を測定できるためエピタキシ
ャル成長層を数人にまで薄くすることができる。Next, the step difference in the step portion 15 is measured using, for example, a step measuring device, and the thickness of the epitaxial growth layer 14 is determined. Since this step measuring device can measure the step difference of several people, the epitaxial growth layer can be thinned down to just a few people.
尚、上記実施例においては段差を形成するための絶縁膜
として酸化膜を用いた場合について説明したが、窒化膜
を用いてもよい。酸化膜を窒化膜にすることにより、エ
ピタキシャル成長工程で酸化膜がキャリアガスとしての
高温の水素によりエツチングされるという影響を受ける
ことが無くなる為、窒化膜の膜厚を、例えば数人まで薄
くすることが可能となり、それに伴ってエピタキシャル
成長層の膜厚も薄くできるという利点がある。In the above embodiment, an oxide film is used as the insulating film for forming the step, but a nitride film may also be used. By replacing the oxide film with a nitride film, the oxide film is no longer affected by etching by high-temperature hydrogen as a carrier gas during the epitaxial growth process, so the thickness of the nitride film can be reduced to, for example, several layers. This has the advantage that the thickness of the epitaxial growth layer can be reduced accordingly.
以上説明したように本発明は、半導体基板上に選択的に
絶縁膜を形成したのち選択エピタキシャル法でエピタキ
シャル成長層を形成し、次で絶縁膜を除去してエピタキ
シャル成長層表面から半導体基板表面まで達する段差を
形成し、この段差を測定することにより、エピタキシャ
ル成長層の膜厚を数人の厚さまで容易に測定できる。As explained above, in the present invention, after selectively forming an insulating film on a semiconductor substrate, an epitaxial growth layer is formed by selective epitaxial method, and then the insulating film is removed to form a step extending from the surface of the epitaxial growth layer to the surface of the semiconductor substrate. By forming a layer and measuring the step difference, the thickness of the epitaxially grown layer can be easily measured up to several thicknesses.
第１図は本発明の一実施例を説明するための半導体チッ
プの断面図である。
１１、ＩＩＡ・・・酸化膜、１２・・・シリコン基板、
１４・・・エピタキシャル成長層、１５・・・段部。FIG. 1 is a sectional view of a semiconductor chip for explaining one embodiment of the present invention. 11, IIA... Oxide film, 12... Silicon substrate,
14...Epitaxial growth layer, 15...Stepped portion.
Claims (1)
エピタキシャル成長法により前記半導体基板上にエピタ
キシャル成長層を形成する工程と、エピタキシャル成長
層が形成された前記半導体基板上の前記絶縁膜を除去し
て半導体基板表面を露出する工程と、露出した前記半導
体基板表面と前記エピタキシャル成長層表面との段差を
測定する工程とを含むことを特徴とするエピタキシャル
成長層の膜厚測定方法。selectively forming an insulating film on a semiconductor substrate; forming an epitaxial growth layer on the semiconductor substrate by selective epitaxial growth; and removing the insulating film on the semiconductor substrate on which the epitaxial growth layer is formed. A method for measuring the thickness of an epitaxially grown layer, the method comprising: exposing a surface of a semiconductor substrate; and measuring a step between the exposed surface of the semiconductor substrate and the surface of the epitaxially grown layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25867088A JPH02105438A (en) | 1988-10-13 | 1988-10-13 | Measurement of film thickness of epitaxial growth layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25867088A JPH02105438A (en) | 1988-10-13 | 1988-10-13 | Measurement of film thickness of epitaxial growth layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02105438A true JPH02105438A (en) | 1990-04-18 |
Family
ID=17323468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25867088A Pending JPH02105438A (en) | 1988-10-13 | 1988-10-13 | Measurement of film thickness of epitaxial growth layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02105438A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970022206A (en) * | 1995-10-16 | 1997-05-28 | 김익명 | Film thickness measurement method |
| US6010914A (en) * | 1996-10-28 | 2000-01-04 | Nec Corporation | Method for manufacturing a semiconductor device |
| DE10324551A1 (en) * | 2003-05-30 | 2004-12-30 | Infineon Technologies Ag | Determining thickness of layer grown on semiconductor substrate comprises forming periodic structure on surface of substrate, carrying out selective epitaxial growth, and carrying out scatterometric process |
| KR100850134B1 (en) * | 2006-11-29 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Measurement method of a thickness in an epitaxial process using a surface step |
| CN102376534A (en) * | 2010-08-26 | 2012-03-14 | 上海华虹Nec电子有限公司 | Manufacturing method of standard sheet for silicon epitaxial film thickness test |
| CN102569041A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method of selective extension process |
-
1988
- 1988-10-13 JP JP25867088A patent/JPH02105438A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970022206A (en) * | 1995-10-16 | 1997-05-28 | 김익명 | Film thickness measurement method |
| US6010914A (en) * | 1996-10-28 | 2000-01-04 | Nec Corporation | Method for manufacturing a semiconductor device |
| DE10324551A1 (en) * | 2003-05-30 | 2004-12-30 | Infineon Technologies Ag | Determining thickness of layer grown on semiconductor substrate comprises forming periodic structure on surface of substrate, carrying out selective epitaxial growth, and carrying out scatterometric process |
| KR100850134B1 (en) * | 2006-11-29 | 2008-08-04 | 동부일렉트로닉스 주식회사 | Measurement method of a thickness in an epitaxial process using a surface step |
| CN102376534A (en) * | 2010-08-26 | 2012-03-14 | 上海华虹Nec电子有限公司 | Manufacturing method of standard sheet for silicon epitaxial film thickness test |
| CN102569041A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method of selective extension process |
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