JPH01201013A - ３−５族化合物半導体多結晶の合成方法 - Google Patents
３−５族化合物半導体多結晶の合成方法Info
- Publication number
- JPH01201013A JPH01201013A JP2469988A JP2469988A JPH01201013A JP H01201013 A JPH01201013 A JP H01201013A JP 2469988 A JP2469988 A JP 2469988A JP 2469988 A JP2469988 A JP 2469988A JP H01201013 A JPH01201013 A JP H01201013A
- Authority
- JP
- Japan
- Prior art keywords
- group
- reservoir
- synthesis
- compound semiconductor
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 title claims description 29
- 238000001308 synthesis method Methods 0.000 title claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 20
- 230000002194 synthesizing effect Effects 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 229910021478 group 5 element Inorganic materials 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000009027 insemination Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2469988A JPH01201013A (ja) | 1988-02-04 | 1988-02-04 | ３−５族化合物半導体多結晶の合成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2469988A JPH01201013A (ja) | 1988-02-04 | 1988-02-04 | ３−５族化合物半導体多結晶の合成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01201013A true JPH01201013A (ja) | 1989-08-14 |
| JPH0535684B2 JPH0535684B2 (enExample) | 1993-05-27 |
Family
ID=12145421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2469988A Granted JPH01201013A (ja) | 1988-02-04 | 1988-02-04 | ３−５族化合物半導体多結晶の合成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01201013A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206080A (en) * | 1991-02-13 | 1993-04-27 | Tree Extracts Research Association | Fragrant non-hollow core-in-sheath type composite staple fiber and textile material containing same |
-
1988
- 1988-02-04 JP JP2469988A patent/JPH01201013A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5206080A (en) * | 1991-02-13 | 1993-04-27 | Tree Extracts Research Association | Fragrant non-hollow core-in-sheath type composite staple fiber and textile material containing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0535684B2 (enExample) | 1993-05-27 |
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