JPH0441188Y2 - - Google Patents
Info
- Publication number
- JPH0441188Y2 JPH0441188Y2 JP5852087U JP5852087U JPH0441188Y2 JP H0441188 Y2 JPH0441188 Y2 JP H0441188Y2 JP 5852087 U JP5852087 U JP 5852087U JP 5852087 U JP5852087 U JP 5852087U JP H0441188 Y2 JPH0441188 Y2 JP H0441188Y2
- Authority
- JP
- Japan
- Prior art keywords
- reservoir
- injection tube
- heating
- heater
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 claims description 48
- 239000007924 injection Substances 0.000 claims description 48
- 238000010438 heat treatment Methods 0.000 claims description 30
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5852087U JPH0441188Y2 (enExample) | 1987-04-17 | 1987-04-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5852087U JPH0441188Y2 (enExample) | 1987-04-17 | 1987-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63164937U JPS63164937U (enExample) | 1988-10-27 |
| JPH0441188Y2 true JPH0441188Y2 (enExample) | 1992-09-28 |
Family
ID=30889169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5852087U Expired JPH0441188Y2 (enExample) | 1987-04-17 | 1987-04-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0441188Y2 (enExample) |
-
1987
- 1987-04-17 JP JP5852087U patent/JPH0441188Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63164937U (enExample) | 1988-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4404172A (en) | Method and apparatus for forming and growing a single crystal of a semiconductor compound | |
| EP0865518B1 (en) | A device for heat treatment of objects | |
| US5866094A (en) | Method of feeding dopant for continuously-charged method and a dopant composition | |
| CN109576777A (zh) | 晶体生长用双层坩埚及晶体生长工艺 | |
| JPH0441188Y2 (enExample) | ||
| EP0144512B1 (en) | Semiconductor boule pulling rod | |
| US3036898A (en) | Semiconductor zone refining and crystal growth | |
| GB1353917A (en) | Method and apparatus for forming crystalline bodies of a semicon ductor material | |
| US5240685A (en) | Apparatus for growing a GaAs single crystal by pulling from GaAs melt | |
| US3210149A (en) | Method of producing monocrystals of a semiconductor via the vapor phase | |
| US3649210A (en) | Apparatus for crucible-free zone-melting of crystalline materials | |
| JPH0535684B2 (enExample) | ||
| CA1228524A (en) | Method for growing a gaas single crystal by pulling from gaas melt | |
| JP3788156B2 (ja) | 化合物半導体単結晶の製造方法およびそれに用いられるｐｂｎ製容器 | |
| JPS63134594A (ja) | ３−ｖ族化合物半導体単結晶の製造方法 | |
| JP4155085B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPH07165488A (ja) | 結晶成長装置及び結晶成長方法 | |
| JPH10130098A (ja) | 二元系化合物半導体単結晶の成長法 | |
| JP3532245B2 (ja) | 混晶単結晶体の製造方法 | |
| JPH0234592A (ja) | 化合物半導体単結晶の成長方法 | |
| JPH08319189A (ja) | 単結晶の製造方法及び単結晶製造装置 | |
| JPS62171984A (ja) | 結晶製造装置 | |
| JPH0416591A (ja) | 化合物半導体の単結晶引き上げ装置 | |
| JPH06275532A (ja) | Ｉｉｉ −ｖ族化合物半導体の製造方法 | |
| JPH02208288A (ja) | ３―５族化合物半導体単結晶の製造方法 |