JPH01200623A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH01200623A JPH01200623A JP2497088A JP2497088A JPH01200623A JP H01200623 A JPH01200623 A JP H01200623A JP 2497088 A JP2497088 A JP 2497088A JP 2497088 A JP2497088 A JP 2497088A JP H01200623 A JPH01200623 A JP H01200623A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- cooling gas
- semiconductor
- irregularity
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000112 cooling gas Substances 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000000428 dust Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置製造における感光性樹脂液塗布工程
、あるいは現像処理工程に使用される半導体製造装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus used in a photosensitive resin liquid coating process or a developing process in semiconductor device manufacturing.
従来、例えば感光性樹脂液塗布工程においては、第３図
に示すように基体２に半導体基板１を真空吸着し、カッ
プ５内にて半導体基板１に感光性樹脂液を適−ｂｔｉ下
させ、基体２により基板１に遠心力を作用させてその表
面に感光性樹脂を塗布している。３は回転駆動力を基体
２に伝える回転軸、４は基体２を通して半導体基板を真
空吸着するポンプである。Conventionally, for example, in the process of applying a photosensitive resin liquid, as shown in FIG. A centrifugal force is applied to the substrate 1 by the base 2, and a photosensitive resin is applied to the surface of the substrate 1. Reference numeral 3 denotes a rotating shaft for transmitting rotational driving force to the base 2, and 4 a pump for vacuum suctioning the semiconductor substrate through the base 2.
上述した従来の感光性樹脂等を適量滴下する装置にはそ
の前段に半導体基板の水分を蒸発させる焼きしめ装置が
設置しであるが、該焼きしめ装置にて加熱された半導体
基板が前記塗布装置で処理を行う時点で基板温度を一定
にすることは困難であり、さらに室温以■に基板温度を
Ｐ１５Ｉ整することは不可能である。このため、感光性
樹脂等を適斌滴下し、高速回転により遠心力を作用させ
て得られる感光性樹脂の膜厚が連続処理される半導体基
板間、さらに面内で均一性が得られず、微細化が進む半
導体装置のパターン寸法のバラツキを生じさせる要因と
して問題となっている。The above-mentioned conventional device for dropping an appropriate amount of photosensitive resin, etc. is equipped with a baking device that evaporates moisture from the semiconductor substrate before the device, and the semiconductor substrate heated by the baking device is transferred to the coating device. It is difficult to keep the substrate temperature constant at the time of processing, and furthermore, it is impossible to adjust the substrate temperature to P15I below room temperature. For this reason, the film thickness of the photosensitive resin obtained by dropping the photosensitive resin or the like in an appropriate manner and applying centrifugal force by high-speed rotation is not uniform between the semiconductor substrates that are continuously processed, and even within the plane. This has become a problem as a factor causing variations in pattern dimensions of semiconductor devices, which are becoming increasingly finer.
本発明の目的は前記課題を解消した半導体製造装置を提
供することにある。An object of the present invention is to provide a semiconductor manufacturing apparatus that solves the above problems.
上述した従来の半導体製造装置に対し、本発明は基体に
真空吸着される半導体基板に冷却気体を吹き付けて温度
調整を行うという相違点を有する。The present invention differs from the conventional semiconductor manufacturing apparatus described above in that the temperature is adjusted by blowing cooling gas onto the semiconductor substrate vacuum-adsorbed to the base.
上記目的を達成するため、本発明の半導体製造装置にお
いては、基体に真空吸着される半導体基板に冷却気体を
吹き付ける冷却気体噴出機構を有するものである。In order to achieve the above object, the semiconductor manufacturing apparatus of the present invention includes a cooling gas jetting mechanism that sprays cooling gas onto a semiconductor substrate that is vacuum-adsorbed to a base.
次に本発明の一実施例について図を用いて説明する。 Next, one embodiment of the present invention will be described using the drawings.
第１図、第２図は本発明の一実施例を示す断面図である
。1 and 2 are cross-sectional views showing one embodiment of the present invention.
本発明の半導体製造装置は第１図に示すように、半導体
基板１を真空吸着する基体２と、基体２を上端に固定し
た回転軸３と、該回転軸３を回転駆動し、かつ該回転軸
３を通して基体２を真空引きするポンプ４と、感光性樹
脂液等を回転塗布する際１周囲への液体の飛散を防止す
るカップと、カップ５の内側で前記基体２の外側、かつ
半導体基板１の直下に位置し冷却気体を噴出する冷却気
体噴出機構を有する。該冷却気体噴出機構は、冷却気体
噴出ロアをもつプレート６と、プレート６に送り込む気
体を冷却、温調する調整部８と、冷却用気体配管９とを
含む。As shown in FIG. 1, the semiconductor manufacturing apparatus of the present invention includes a base body 2 that vacuum-chucks a semiconductor substrate 1, a rotating shaft 3 with the base body 2 fixed to the upper end, and a rotating shaft 3 that rotates the rotating shaft 3. A pump 4 that vacuums the substrate 2 through a shaft 3, a cup that prevents the liquid from scattering around the substrate 2 when spin-coating a photosensitive resin liquid, and a semiconductor substrate inside the cup 5 and outside the substrate 2. 1 and has a cooling gas ejection mechanism that ejects cooling gas. The cooling gas jetting mechanism includes a plate 6 having a cooling gas jetting lower, an adjustment section 8 that cools and adjusts the temperature of the gas sent to the plate 6, and a cooling gas pipe 9.
実施例において、第２図に示すように半導体基板１に感
光性樹脂液をｉａ量滴下する前に、基体２に半導体基板
１を真空吸着させ、配管９より冷却用気体を調整部８に
送り込み、そこで気体の温度を調整しこれをプレート６
に供給し、プレート６の噴出ロアから冷却用気体を半導
体基板１に吹き付けてその温度を調整する。その後は従
来と同じ作用を行わせる。In the embodiment, as shown in FIG. 2, before dropping an ia amount of photosensitive resin liquid onto the semiconductor substrate 1, the semiconductor substrate 1 is vacuum-adsorbed on the base 2, and cooling gas is sent to the adjustment section 8 from the piping 9. , then adjust the temperature of the gas and transfer it to plate 6.
The temperature of the semiconductor substrate 1 is adjusted by blowing cooling gas onto the semiconductor substrate 1 from the lower blowout of the plate 6. After that, the same action as before is performed.
尚、実施例では感光性樹脂液塗布工程に適用した場合に
ついて説明したが、現像処理工程に適用しても良い。In addition, although the case where it applied to the photosensitive resin liquid application process was demonstrated in the Example, it may be applied to the development processing process.
以上説明したように本発明は感光性樹脂等を適＋Ｉｋ滴
下する半導体基板の温度を最適に、かつ均一にするため
、半導体基板の温度のバラツキによる感光性樹脂の塗布
膜厚のバラツキ、さらには半導体装置の素子寸法のバラ
ツキを低減することができる。さらに、冷却気体の流れ
により半導体基板の裏面への処理液のまわり込みを防止
でき、裏面ゴミによる後工程への悪影響を防止できる効
果を有する。As explained above, the present invention aims at optimizing and uniforming the temperature of the semiconductor substrate onto which the photosensitive resin, etc. is dripped at an appropriate +Ik level. Variations in element dimensions of semiconductor devices can be reduced. Furthermore, the flow of cooling gas can prevent the processing liquid from flowing around to the back surface of the semiconductor substrate, and has the effect of preventing backside dust from having an adverse effect on subsequent processes.
第１図は本発明の一実施例を示す断面図、第２図は従来
装置を示す断面図である。
１・・・半導体基板 ２・・・基体３・・回転
軸 ４・・・ポンプ５・・・カップ
６・・・プレート７・・・冷却気体噴出口
８・・・調整部９・・・冷却用気体配管
特許出願人 九州日本電気株式会社
１ ・ ・１・・ご−
代理人 弁理士管灯 中 １°Ｈ’＋
Ｊ
第１区FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional device. 1... Semiconductor substrate 2... Base 3... Rotating shaft 4... Pump 5... Cup
6...Plate 7...Cooling gas outlet
8... Adjustment part 9... Cooling gas piping Patent applicant Kyushu NEC Co., Ltd. 1 ・ ・ 1 ・ ・ Agent Patent attorney control light Medium 1°H'+ J 1st ward
Claims (1)
を有し、半導体基板表面に感光性樹脂液等を適量滴下す
る半導体製造装置において、基体に真空吸着される半導
体基板に冷却気体を吹き付ける冷却気体噴出機構を有す
ることを特徴とする半導体製造装置。1. In semiconductor manufacturing equipment that has a base that applies centrifugal force to the vacuum-adsorbed semiconductor substrate and drops an appropriate amount of photosensitive resin liquid, etc. onto the surface of the semiconductor substrate, cooling that sprays cooling gas onto the semiconductor substrate that is vacuum-adsorbed to the base A semiconductor manufacturing device characterized by having a gas ejection mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2497088A JPH01200623A (en) | 1988-02-05 | 1988-02-05 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2497088A JPH01200623A (en) | 1988-02-05 | 1988-02-05 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01200623A true JPH01200623A (en) | 1989-08-11 |
Family
ID=12152828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2497088A Pending JPH01200623A (en) | 1988-02-05 | 1988-02-05 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01200623A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03124017A (en) * | 1989-10-06 | 1991-05-27 | Tokyo Electron Ltd | Treatment and device therefor |
| JPH06168871A (en) * | 1992-11-30 | 1994-06-14 | Nec Corp | Coater |
| US5578127A (en) * | 1993-02-08 | 1996-11-26 | Tokyo Electron Ltd | System for applying process liquid |
| EP0863438A1 (en) * | 1997-03-05 | 1998-09-09 | Tokyo Electron Limited | Method of and apparatus for processing photoresist, method of evaluating photoresist film, and processing apparatus using the evaluation method |
-
1988
- 1988-02-05 JP JP2497088A patent/JPH01200623A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03124017A (en) * | 1989-10-06 | 1991-05-27 | Tokyo Electron Ltd | Treatment and device therefor |
| JPH06168871A (en) * | 1992-11-30 | 1994-06-14 | Nec Corp | Coater |
| US5578127A (en) * | 1993-02-08 | 1996-11-26 | Tokyo Electron Ltd | System for applying process liquid |
| EP0863438A1 (en) * | 1997-03-05 | 1998-09-09 | Tokyo Electron Limited | Method of and apparatus for processing photoresist, method of evaluating photoresist film, and processing apparatus using the evaluation method |
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