KR20030094680A - Photo resist forming apparatus - Google Patents
Photo resist forming apparatus Download PDFInfo
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- KR20030094680A KR20030094680A KR1020020031931A KR20020031931A KR20030094680A KR 20030094680 A KR20030094680 A KR 20030094680A KR 1020020031931 A KR1020020031931 A KR 1020020031931A KR 20020031931 A KR20020031931 A KR 20020031931A KR 20030094680 A KR20030094680 A KR 20030094680A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Materials For Photolithography (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
본 발명은 반도체 웨이퍼 코팅장치에 관한 것으로, 특히 기존의 포토레지스트 또는 현상액등을 도포하는 스핀온 글래스형 스피너(spin on glass type spinner)를 사용하였을 때 포토레지스트 또는 현상액 등의 막 두께가 불균일하게 나타나는 단점을 개선할 수 있는 도포 방법 및 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor wafer coating apparatus. In particular, when a spin on glass type spinner for applying a conventional photoresist or developer is used, the film thickness of the photoresist or developer is uneven. It relates to a coating method and apparatus that can improve the disadvantages.
일반적으로 반도체 웨이퍼 제조공정 중 포토공정, 에칭공정 및 증착공정을진행한 후에 층간절연과 평탄화를 위하여 코팅공정을 실시하는데, 이에 따른 종래의 기술을 설명하면 다음과 같다.In general, a coating process is performed for interlayer insulation and planarization after a photo process, an etching process, and a deposition process in a semiconductor wafer manufacturing process.
종래의 감광액 코팅장치는, 도 3에 도시된 바와 같이, 일정량의 감광액 용액을 수용하는 감광액 공급용기에 연결 형성되어 웨이퍼(w)에 감광액 용액을 공급하는 감광액공급라인(3)과, 상기 공급라인(3)의 끝단에 감광액을 웨이퍼(W)에 떨어뜨리기 위한 노즐(4)이 형성되어 있다. 그 노즐(4) 아래에는 감광액 용액이 떨어진 웨이퍼(W)를 회전시켜 웨이퍼(W) 전체에 균일하게 도포하는 회전척(5)로 구성되어 있다.In the conventional photosensitive liquid coating apparatus, as shown in FIG. 3, the photosensitive liquid supply line 3 is formed to be connected to a photosensitive liquid supply container containing a predetermined amount of photosensitive liquid solution to supply a photosensitive liquid solution to a wafer w, and the supply line. At the end of (3), a nozzle 4 for dropping the photosensitive liquid onto the wafer W is formed. Under the nozzle 4, it is comprised by the rotating chuck 5 which rotates the wafer W in which the photosensitive liquid solution fell, and apply | coats uniformly to the whole wafer W. As shown in FIG.
이와 같이 구성된 종래 반도체 웨이퍼 코팅장치에서의 코팅 공정을 설명하면 다음과 같다.Referring to the coating process in the conventional semiconductor wafer coating apparatus configured as described above are as follows.
상기 노즐(4)로부터 일정량의 감광액이 회전척(5) 상면에 설치된 웨이퍼척(4)에 얹어진 웨이퍼(W)상의 중앙에 공급되면, 회전척(5)가 회전을 하며 따라서 그 원심력에 의해 웨이퍼(W) 중앙에 공급된 감광액은 웨이퍼(w) 전면에 도포된다.When a certain amount of the photosensitive liquid is supplied from the nozzle 4 to the center on the wafer W mounted on the wafer chuck 4 provided on the upper surface of the rotary chuck 5, the rotary chuck 5 rotates and accordingly the centrifugal force The photosensitive liquid supplied to the center of the wafer W is applied to the entire surface of the wafer w.
그러나, 상술한 종래의 스핀 코팅 기술은 감광액공급라인(3)으로부터 웨이퍼(W) 중앙에 감광액을 공급한 후 회전척(5)의 원심력에 의해 웨이퍼(W)를 회전시켜 감광액을 도포하는 방식으로 다음과 같은 문제점들을 갖고 있다.However, the conventional spin coating technique described above is a method of applying the photosensitive liquid by supplying the photosensitive liquid to the center of the wafer W from the photosensitive liquid supply line 3 and then rotating the wafer W by the centrifugal force of the rotary chuck 5. It has the following problems.
첫째, 웨이퍼(W)의 구경이 대형화될 경우 용액의 점도 등에 따라서는 웨이퍼(W)상에 도포되는 감광액의 균일도가 일정하지 않으므로 제품의 신뢰도가 감소되는 문제점이 있었다. 특히, 엘시디(LCD) 기판 등 대형이며 원형이 아닌웨이퍼(W)에서는 도포가 균일하게 이루어지지 않는 문제점이 있었다. 둘째, 석-백(suck back) 여부에 의한 코팅 불량 가능성이 큰 문제점이 있었다. 셋째, 감광액의 소모가 많은 문제점이 있었다.First, when the diameter of the wafer W is enlarged, the uniformity of the photoresist applied onto the wafer W is not constant depending on the viscosity of the solution and the like, thereby reducing the reliability of the product. In particular, there is a problem that the coating is not uniformly made in the wafer W, which is large and not circular, such as an LCD substrate. Second, there was a big problem of the possibility of coating defects due to suck back. Third, there was a lot of problems in the consumption of the photoresist.
본 발명은 이와 같은 종래의 문제점을 해결하기 위한 것으로, 그 목적은 대형 기판이나 비원형의 기판에도 감광액을 균일하게 도포함으로써 제품의 신뢰도를 향상시킬 수 있는 반도체 웨이퍼 코팅장치를 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and an object thereof is to provide a semiconductor wafer coating apparatus which can improve the reliability of a product by uniformly applying a photosensitive liquid to a large substrate or a non-circular substrate. .
도 1은 본 발명의 바람직한 실시예에 따른 감광액 도포 장치의 종단면도;1 is a longitudinal sectional view of a photosensitive liquid applying apparatus according to a preferred embodiment of the present invention;
도 2는 본 발명의 변형예에 따른 감광액 도포 장치의 종단면도;2 is a longitudinal sectional view of a photosensitive liquid applying apparatus according to a modification of the present invention;
도 3은 일반적인 감광액 도포 장치의 종단면도이다.3 is a longitudinal cross-sectional view of a general photosensitive liquid applying apparatus.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
110 : 캐치컵110: catch cup
120 : 테이블120: table
130 : 분무식 노즐130: spray nozzle
140 : 초음파 진동자140: ultrasonic vibrator
상술한 목적을 달성하기 위한 본 발명의 특징에 의하면, 본 발명의 감광액 도포 장치는 감광액을 스프레이방식으로 분사하기 위한 분무식 노즐을 갖는 도포기를 포함한다. 본 발명의 실시예에서 상기 분무식 노즐은 내부에 초음파 진동자를 구비한다. 본 발명의 실시예에서 상기 도포장치는 상기 캐치컵 내의 공조 흐름을 제어하기 위한 배기 수단을 더 포함한다. 상기 배기 수단은 상기 캐치컵에 형성된 배기관에 연결되어 상기 캐치컵내의 공기를 외부로 강제 배기시키는 진공 펌프와; 상기 배기관에 설치되는 배기 밸브 및; 상기 배기 밸브의 개폐량을 조절하는 제어기를 포함한다.According to a feature of the present invention for achieving the above object, the photosensitive liquid applying apparatus of the present invention includes an applicator having a spray nozzle for spraying the photosensitive liquid by a spray method. In an embodiment of the present invention, the spray nozzle has an ultrasonic vibrator therein. In an embodiment of the present invention the applicator further comprises an exhaust means for controlling the air conditioning flow in the catch cup. The exhaust means includes a vacuum pump connected to the exhaust pipe formed in the catch cup for forcibly exhausting the air in the catch cup to the outside; An exhaust valve installed at the exhaust pipe; It includes a controller for adjusting the opening and closing amount of the exhaust valve.
이하, 첨부된 도면 도 1 내지 도 2를 참조하면서 본 발명의 실시예를 보다 상세히 설명한다. 상기 도면들에 있어서 동일한 기능을 수행하는 구성요소에 대해서는 동일한 참조 번호가 병기되어 있다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are given to components that perform the same function.
도 1은 본 발명의 바람직한 실시예에 따른 감광액 도포 장치의 종단면이다.1 is a longitudinal section of a photosensitive liquid applying apparatus according to a preferred embodiment of the present invention.
도 1에 도시된 바와 같이, 본 발명의 바람직한 실시예에 따른 도포 장치(100)는 도포 공정이 진행되는 캐치컵(110)내에 이송장치(도시는 생략함)에 의해 공급되는 웨이퍼(w)가 안착되도록 테이블(120)이 설치되어 있다. 상기 캐치컵(110)의 상부에는 상기 테이블(120)상에 안착되는 웨이퍼(w)의 상부면에 감광액을 분무시키기 위한 분무식 노즐(130)이 이송가능하게 설치되어 있다. 상기 분무식 노즐(130)에는 초음파 진동자(132)가 설치된다.As shown in FIG. 1, the coating apparatus 100 according to the preferred embodiment of the present invention includes a wafer w supplied by a transfer apparatus (not shown) in the catch cup 110 where the coating process is performed. Table 120 is installed to be seated. On the upper portion of the catch cup 110, a spray nozzle 130 for spraying the photosensitive liquid on the upper surface of the wafer w seated on the table 120 is installed to be transportable. The ultrasonic nozzle 132 is installed on the spray nozzle 130.
이처럼, 본 발명에서는 상기 분무식 노즐(130)로부터 분무되는 감광액은 초음파 진동자(132)에 의해 솔벤트 성분이 증발된 상태로 웨이퍼(w) 표면에 코팅된다. 따라서, 건조 공정을 행하지 않아도 되는 이점이 있다. 그 뿐만 아니라, 감광액이 분무식으로 웨이퍼에 코팅됨으로써, 직경이 큰 웨이퍼 및 원심력에 의한 균일한 도포가 어려운 비원형의 기판에 균일하게 도포할 수 있다.As such, in the present invention, the photosensitive liquid sprayed from the spray nozzle 130 is coated on the surface of the wafer w by the solvent component evaporated by the ultrasonic vibrator 132. Therefore, there is an advantage of not having to perform a drying step. In addition, since the photosensitive liquid is coated on the wafer by spraying, it can be uniformly applied to a wafer having a large diameter and a non-circular substrate which is difficult to apply uniformly by centrifugal force.
또한 본 발명에서는 상기 캐치컵(110)내의 공기를 일정한 속도 및 압력을 유지하도록 강제 배기시킴으로써 상기 분무식 노즐로부터 분무되는 감광액의 분무량과 산포를 조절하는 배기 수단(140)을 갖는다. 이 배기 수단(140)은, 상기 캐치컵(110)의 하부에는 배기관(112)이 설치되어 있고, 상기 배기관(112)에는 캐치컵(110)내의 공기를 배기관(112)을 통해 강제 배기 시키도록 진공펌프(142)가 연결되어 있다. 상기 배기관(112)에는 배기 밸브(144)가 설치되어있으며, 이 배기 밸브(144)의 개폐량을 조절하도록 제어기(146)가 설치되어 있다.In addition, the present invention has an exhaust means 140 for controlling the spray amount and dispersion of the photosensitive liquid sprayed from the spray nozzle by forcibly evacuating the air in the catch cup 110 to maintain a constant speed and pressure. The exhaust means 140, the exhaust pipe 112 is provided in the lower portion of the catch cup 110, the exhaust pipe 112 to force exhaust of the air in the catch cup 110 through the exhaust pipe 112. The vacuum pump 142 is connected. An exhaust valve 144 is provided in the exhaust pipe 112, and a controller 146 is provided to adjust the amount of opening and closing of the exhaust valve 144.
이처럼, 본 발명에서는 낮은 TPR 형성에 용이한 구성으로 상기 캐치컵(110)내의 공조 흐름을 제어하여 분무의 량 및 산포를 조절할 수 있다.As such, in the present invention, it is possible to control the amount and spread of the spray by controlling the airflow flow in the catch cup 110 in an easy configuration for low TPR formation.
도 2에 도시된 본 발명의 변형예인 도포 장치(100a)는 도 1에 도시된 실시예에 따른 도포 장치(100)와 동일한 구성과 기능을 갖는 캐치컵(110), 테이블(120), 분무식 노즐(130) 등을 갖으며, 이들에 대한 설명은 앞에서 상세하게 설명하였기에 본 변형예에서는 생략하기로 한다. 다만, 본 실시예에서는 테이블(120)을 회전시키는 회전모터(170)를 갖는다.The coating apparatus 100a, which is a variation of the present invention shown in FIG. It has a nozzle 130 and the like, the description thereof will be omitted in the present modification because it has been described in detail above. However, in the present embodiment, it has a rotary motor 170 for rotating the table 120.
도 2에 도시된 바와 같이, 본 발명의 바람직한 변형예에 따른 도포 장치(100a)는 도포 공정이 진행되는 캐치컵(110)내의 하부에는 모터(170)가 설치된다. 상기 모터(170)의 상부에는 모터(170)의 구동력을 전달하도록 회전축(172)이 결합된다. 상기 회전축(172)의 상단에는 이송장치(도시는 생략함)에 의해 공급되는 웨이퍼(w)가 안착되도록 테이블(120)이 고정되어 있다. 상기 캐치컵(110)의 상부 일측에는 상기 테이블(120)상에 안착되는 웨이퍼(w)의 상부면에 감광액을 분무시키기 위한 분무식 노즐(130)이 이송가능하게 설치되어 있다. 상기 분무식 노즐(130)에는 초음파 진동자(132)가 설치된다.As shown in FIG. 2, in the application apparatus 100a according to a preferred modification of the present invention, a motor 170 is installed at a lower portion of the catch cup 110 in which an application process is performed. The rotary shaft 172 is coupled to the upper portion of the motor 170 to transmit the driving force of the motor 170. The table 120 is fixed to the upper end of the rotating shaft 172 so that the wafer (w) supplied by the transfer device (not shown) is seated. On the upper side of the catch cup 110, a spray nozzle 130 for spraying the photosensitive liquid on the upper surface of the wafer w seated on the table 120 is installed to be transportable. The ultrasonic nozzle 132 is installed on the spray nozzle 130.
이와 같이 구성된 본 발명에서의 감광액 도포를 설명하면 다음과 같다.The application of the photosensitive liquid in the present invention configured as described above is as follows.
먼저, 웨이퍼는 이송장치에 의해 상기 테이블(120)상에 안착된다. 상기 분무식 노즐(130)은 웨이퍼(w)의 직상부로 위치시킨다. 상기 캐치컵(110)내의 모터(170)를 구동시키면 상기 모터(170)에 결합된 회전축(172)이 일방향으로 회전하게 되고 회전축에 고정된 테이블(120) 및 상기 테이블상에 안착된 웨이퍼(w)도 일방향으로 함께 회전하게 된다. 이와 같이 웨이퍼의 회전이 시작되면 분무식 노즐(130)을 통해 웨이퍼(w)의 상부면으로 감광액을 분무시킨다. 여기서, 감광제를분사할 때는 분무식 노즐(130)과 웨이퍼(w) 사이의 거리를 적절하게 유지하며, 감광제가 분사되는 강도를 알맞게 조절한다. 여기서, 상기 웨이퍼 상부면에 분무되는 감광액은 초음파 진동자(132)의 진동량을 조정하여 분무 입자의 크기를 조절할 수 있다. 한편, 상기 진공펌프(142)를 작동시키면 캐치컵(110)내의 공기가 배기관(112)을 통해 외부로 배기되고, 웨이퍼(w)의 균일한 막을 형성시키기 위해 공조 흐름을 상기 배기 밸브(144)의 개폐량 조절을 통해 조절한다.First, a wafer is seated on the table 120 by a transfer device. The spray nozzle 130 is positioned directly above the wafer w. When the motor 170 is driven in the catch cup 110, the rotating shaft 172 coupled to the motor 170 rotates in one direction, and the table 120 fixed to the rotating shaft and the wafer w mounted on the table are rotated. ) Will also rotate together in one direction. As such, when the rotation of the wafer starts, the photosensitive liquid is sprayed onto the upper surface of the wafer w through the spray nozzle 130. Here, when spraying the photosensitive agent, the distance between the spray nozzle 130 and the wafer (w) is properly maintained, and the intensity of the photosensitive agent injected is adjusted accordingly. Here, the photoresist sprayed on the upper surface of the wafer may adjust the size of the spray particles by adjusting the vibration amount of the ultrasonic vibrator 132. On the other hand, when the vacuum pump 142 is operated, the air in the catch cup 110 is exhausted to the outside through the exhaust pipe 112, and the air flow flows the exhaust valve 144 to form a uniform film of the wafer (w). Adjust by adjusting the opening and closing amount.
이상에서, 본 발명에 따른 감광액 도포 장치의 구성 및 작용을 상기한 설명 및 도면에 따라 도시하였지만 이는 예를 들어 설명한 것에 불과하며 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 다양한 변화 및 변경이 가능함은 물론이다.In the above, the configuration and operation of the photosensitive liquid coating apparatus according to the present invention is shown in accordance with the above description and drawings, but this is merely described, for example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.
이와 같은 본 발명에 의하면, 직경이 큰 웨이퍼 및 원심력에 의한 균일한 도포가 어려운 비원형의 기판에 균일하게 도포할 수 있는 효과가 있다.According to the present invention as described above, there is an effect that can be uniformly applied to a wafer having a large diameter and a non-circular substrate which is difficult to apply uniformly by centrifugal force.
Claims (5)
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KR1020020031931A KR20030094680A (en) | 2002-06-07 | 2002-06-07 | Photo resist forming apparatus |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100852751B1 (en) * | 2006-09-28 | 2008-08-18 | 우 옵트로닉스 코포레이션 | Coating-drying apparatus capable of adjusting air flow path |
KR20200017027A (en) * | 2018-08-08 | 2020-02-18 | 세메스 주식회사 | Apparatus and Method for treating substrate |
KR20200017026A (en) * | 2018-08-08 | 2020-02-18 | 세메스 주식회사 | Unit for supplying liquid, Apparatus for treating substrate, and Method for treating substrate |
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KR950006970A (en) * | 1993-08-30 | 1995-03-21 | 제리 매스터슨 | Apparatus and method for rotationally applying liquid chemicals to wafer and plate-like objects |
JPH09139345A (en) * | 1995-10-20 | 1997-05-27 | Texas Instr Inc <Ti> | Processing of photoresist, device for development and method |
KR19990026658A (en) * | 1997-09-25 | 1999-04-15 | 오상수 | How to apply photosensitizer |
KR19990018791U (en) * | 1997-11-14 | 1999-06-05 | 구본준 | Photoresist Developer |
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- 2002-06-07 KR KR1020020031931A patent/KR20030094680A/en not_active Application Discontinuation
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KR950006970A (en) * | 1993-08-30 | 1995-03-21 | 제리 매스터슨 | Apparatus and method for rotationally applying liquid chemicals to wafer and plate-like objects |
JPH09139345A (en) * | 1995-10-20 | 1997-05-27 | Texas Instr Inc <Ti> | Processing of photoresist, device for development and method |
KR19990026658A (en) * | 1997-09-25 | 1999-04-15 | 오상수 | How to apply photosensitizer |
KR19990018791U (en) * | 1997-11-14 | 1999-06-05 | 구본준 | Photoresist Developer |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100852751B1 (en) * | 2006-09-28 | 2008-08-18 | 우 옵트로닉스 코포레이션 | Coating-drying apparatus capable of adjusting air flow path |
KR20200017027A (en) * | 2018-08-08 | 2020-02-18 | 세메스 주식회사 | Apparatus and Method for treating substrate |
KR20200017026A (en) * | 2018-08-08 | 2020-02-18 | 세메스 주식회사 | Unit for supplying liquid, Apparatus for treating substrate, and Method for treating substrate |
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