JPH01198097A - Solid state relay - Google Patents

Solid state relay

Info

Publication number
JPH01198097A
JPH01198097A JP2428388A JP2428388A JPH01198097A JP H01198097 A JPH01198097 A JP H01198097A JP 2428388 A JP2428388 A JP 2428388A JP 2428388 A JP2428388 A JP 2428388A JP H01198097 A JPH01198097 A JP H01198097A
Authority
JP
Japan
Prior art keywords
substrate
triac
insulating
insulating substrate
photocoupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2428388A
Other languages
Japanese (ja)
Inventor
Mamoru Seo
瀬尾 護
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2428388A priority Critical patent/JPH01198097A/en
Publication of JPH01198097A publication Critical patent/JPH01198097A/en
Pending legal-status Critical Current

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  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To improve dissipation from a TRIAC and insulating properties between input and output terminals, by providing a first insulating substrate on a metallic substrate and further providing a second insulating substrate on the first substrate. CONSTITUTION:A solid state relay according to the invention comprises a first insulating substrate 11 provided on a metallic substrate 2 and having circuit patterns connected to a photocoupler 3 and to a TRIAC 4, and a second insulating substrate 12 provided on the insulating substrate 11 and having circuit patterns including an input signal circuit. In this solid state relay, thickness of the insulating layer (the insulating substrate 11) below the TRIAC 4 can be about 100mum while thickness of the insulating layer (the insulating substrates 11 and 12) below the photocoupler 3 can be adapted to European Insulation Standard (0.5mm or more). Accordingly, it is possible to obtain improved heat conductivity between the metallic substrate 2 and the TRIAC 4 as well as improved insulating properties between input and output terminals 7 and 8.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、入出力間を光学的に絶縁したホトカプラおよ
びこのホトカプラからの信号によって0N10FFする
トライアックを備えたソリッドステートリレーに関する
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state relay that includes a photocoupler that optically insulates input and output, and a triac that performs 0N10FF by a signal from the photocoupler.

〔従来の技術〕[Conventional technology]

従来、この種のソリッドステートリレー(以下SSRと
称する)は第2図に示すように構成されている。これを
同図に基づいて説明すると、同図において、符号1で示
すものは例えばアルミニウム等の金属基板2上に設けら
れホトカプラ3およびトライアック4に接続する配線パ
ターンとしての銅箔パターン(図示せず)を有する絶縁
基板、5はこの絶縁基板1上に設けられ前記ホトカプラ
3および前記トライアック4を囲繞する筒状のケース、
6はこのケース5内に充填されたエポキシ系の樹脂であ
る。なお、7および8は前記ホトカプラ3および前記ト
ライアック4に各々接続する入力端子と出力端子である
Conventionally, this type of solid state relay (hereinafter referred to as SSR) has been configured as shown in FIG. To explain this based on the same figure, in the same figure, what is indicated by reference numeral 1 is a copper foil pattern (not shown) provided on a metal substrate 2 such as aluminum, and as a wiring pattern connected to a photocoupler 3 and a triac 4. ), 5 is a cylindrical case provided on the insulating substrate 1 and surrounding the photocoupler 3 and the triac 4;
6 is an epoxy resin filled in the case 5. Note that 7 and 8 are input terminals and output terminals connected to the photocoupler 3 and the triac 4, respectively.

このように構成されたSSRにおいては、金属基板2上
に薄い絶縁基板lを接着し、この絶縁基板1上にホトカ
プラ3およびトライアック4等の電気部品と入出力端子
7.8を半田付けした後、ケース5を取り付けてから樹
脂6を注入することにより組み立てることができる。
In the SSR configured in this way, a thin insulating substrate 1 is bonded onto a metal substrate 2, and electrical components such as a photocoupler 3 and a triac 4 and input/output terminals 7.8 are soldered onto this insulating substrate 1. , it can be assembled by attaching the case 5 and then injecting the resin 6.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、この種のSSRにおいては、トライアック4
から発生した熱が金属基板2を介して外部に効率よく放
散されるために、絶縁基板1の厚さを100μm程度の
薄い寸法に設定する必要があるが、この場合入力信号回
路に接続する入力端子7と出力信号回路に接続する出力
端子8間の絶縁距離(金属基板l上の絶縁層の厚さ)が
ヨーロッパの絶縁規格に適合する条件(0,5m以上)
を満足する寸法に設定することができないという問題が
あった。
By the way, in this type of SSR, triac 4
In order to efficiently dissipate the heat generated from the metal substrate 2 to the outside, it is necessary to set the thickness of the insulating substrate 1 to a thin dimension of about 100 μm. Conditions in which the insulation distance (thickness of the insulation layer on the metal substrate l) between the terminal 7 and the output terminal 8 connected to the output signal circuit complies with European insulation standards (0.5 m or more)
There was a problem in that it was not possible to set the dimensions to satisfy the requirements.

本発明はこのような事情に鑑みなされたもので、トライ
アックと金属基板間の熱伝導性および入出力端子間の絶
縁性を良好にし、もってトライアックからの放散性と入
出力端子間のta 8&性にすぐれたSSRを提供する
ものである。
The present invention was made in view of the above circumstances, and improves the thermal conductivity between the triac and the metal substrate and the insulation between the input and output terminals, thereby improving the dissipation performance from the triac and the TA 8 & conductivity between the input and output terminals. This provides excellent SSR.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係るSSRは、金属基板上に設けられホトカプ
ラおよびトライアックに接続する配線パターンを有する
第1の絶縁基板と、この絶縁基板上に設けられ入力信号
回路を含む配線パターンを有する第2の絶縁基板とを備
えたものである。
The SSR according to the present invention includes a first insulating substrate provided on a metal substrate and having a wiring pattern connected to a photocoupler and a triac, and a second insulating substrate provided on the insulating substrate and having a wiring pattern including an input signal circuit. It is equipped with a substrate.

〔作 用〕[For production]

本発明においては、トライアック下方の絶縁層の厚さを
100μm程度の寸法に設定することができると共に、
ホトカプラ下方の絶縁層の厚さをヨーロッパの絶縁規格
に適合する寸法に設定することができる。
In the present invention, the thickness of the insulating layer below the triac can be set to about 100 μm, and
The thickness of the insulation layer below the photocoupler can be dimensioned to comply with European insulation standards.

〔実施例〕〔Example〕

第1図は本発明に係るSSRを示す断面図で、同図にお
いて第2図と同一の部材については同一の符号を付し、
詳細な説明は省略する。同図において、符号11で示す
ものは略100μm程度の厚さをもつ第1の絶縁基板で
、前記金属基板2上に設けられており、−側面上には前
記ホトカプラ3および前記トライアック4に接続する配
線パターン(図示せず)が形成されている。12は第2
の絶縁基板で、前記第1の絶縁基板ll上に設けられて
おり、前記金属基板2と反対側の面上には入力信号回路
のみを含有する配線パターン(図示せず)が形成されて
いる。この化8M基板12の厚さは前記第1の絶縁基板
11の厚さとの和が0.5龍以上の寸法に設定されてい
る。
FIG. 1 is a sectional view showing the SSR according to the present invention, in which the same members as in FIG. 2 are denoted by the same reference numerals.
Detailed explanation will be omitted. In the figure, the reference numeral 11 indicates a first insulating substrate having a thickness of about 100 μm, which is provided on the metal substrate 2, and is connected to the photocoupler 3 and the triac 4 on the - side surface. A wiring pattern (not shown) is formed. 12 is the second
The insulating substrate is provided on the first insulating substrate ll, and a wiring pattern (not shown) containing only an input signal circuit is formed on the surface opposite to the metal substrate 2. . The thickness of the 8M chemical substrate 12 is set such that the sum of the thickness of the first insulating substrate 11 is 0.5 or more.

このように構成されたSSRにおいては、トライアック
4下方の絶縁層(絶縁基板11)の厚さを100μm程
度の寸法に設定すると共に、ホトカプラ3下方の絶縁層
(絶縁基板11と絶縁基板12)の厚さをヨーロッパの
絶縁規格に適合する寸法(0,5鶴以上)に設定するこ
とができるから、金属基板2とトライアック4間の熱伝
導性および入出力端子7.8間の絶縁性が良好になる。
In the SSR configured in this way, the thickness of the insulating layer (insulating substrate 11) below the triac 4 is set to about 100 μm, and the thickness of the insulating layer (insulating substrate 11 and insulating substrate 12) below the photocoupler 3 is set to about 100 μm. Since the thickness can be set to a size that complies with European insulation standards (0.5 mm or more), the thermal conductivity between the metal substrate 2 and the triac 4 and the insulation between the input and output terminals 7 and 8 are good. become.

なお、本実施例においては、第2の絶縁基板12上の配
線パターン(図示せず)として入力信号回路のみを含有
するものを示したが、本発明はこれに限定されるもので
はなく、出力端子8側の回路一部を含有するものでも差
し支えない。
In this embodiment, the wiring pattern (not shown) on the second insulating substrate 12 is shown as containing only an input signal circuit, but the present invention is not limited to this, and the wiring pattern (not shown) on the second insulating substrate 12 is It may also include a part of the circuit on the terminal 8 side.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、金属基板上に設け
られホトカプラおよびトライアックに接続する配線パタ
ーンを有する第1の絶縁基板と、この絶縁基板上に設け
られ入力信号回路を含む配線パターンを有する第2の絶
縁基板とを備えたので、トライアック下方の絶縁層の厚
さを100 μm程度の寸法に設定することができると
共に、ホトカプラ下方の絶縁層の厚さを0.5mm以上
の寸法に設定することができる。したがって、トライア
ックと金属基板間の熱伝導性および入出力端子間の絶縁
性が良好になり、トライアックからの放散性と入出力端
子間の絶縁性にすぐれたSSRを得ることができる。
As explained above, according to the present invention, the first insulating substrate has a wiring pattern provided on a metal substrate and connected to a photocoupler and a triac, and a wiring pattern provided on this insulating substrate and including an input signal circuit. Since the second insulating substrate is provided, the thickness of the insulating layer below the triac can be set to about 100 μm, and the thickness of the insulating layer below the photocoupler can be set to 0.5 mm or more. can do. Therefore, the thermal conductivity between the triac and the metal substrate and the insulation between the input and output terminals are improved, and an SSR with excellent dissipation from the triac and excellent insulation between the input and output terminals can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係るSSRを示す断面図、第2図は従
来のSSRを示す断面図である。 2・・・・金属基板、3・・・・ホトカプラ、4・・・
・トライアック、11・・・・第1の絶縁基板、12・
・・・第2の絶縁基板。
FIG. 1 is a sectional view showing an SSR according to the present invention, and FIG. 2 is a sectional view showing a conventional SSR. 2... Metal substrate, 3... Photocoupler, 4...
・Triac, 11...first insulating substrate, 12.
...Second insulating substrate.

Claims (1)

【特許請求の範囲】[Claims] 金属基板上に設けられホトカプラおよびトライアックに
接続する配線パターンを有する第1の絶縁基板と、この
絶縁基板上に設けられ入力信号回路を含む配線パターン
を有する第2の絶縁基板とを備えたことを特徴とするソ
リッドステートリレー。
A first insulating substrate provided on a metal substrate and having a wiring pattern connected to a photocoupler and a triac, and a second insulating substrate provided on this insulating substrate and having a wiring pattern including an input signal circuit. Features solid state relay.
JP2428388A 1988-02-03 1988-02-03 Solid state relay Pending JPH01198097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2428388A JPH01198097A (en) 1988-02-03 1988-02-03 Solid state relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2428388A JPH01198097A (en) 1988-02-03 1988-02-03 Solid state relay

Publications (1)

Publication Number Publication Date
JPH01198097A true JPH01198097A (en) 1989-08-09

Family

ID=12133858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2428388A Pending JPH01198097A (en) 1988-02-03 1988-02-03 Solid state relay

Country Status (1)

Country Link
JP (1) JPH01198097A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932839A (en) * 1997-11-04 1999-08-03 Ren; Jane Method for dissipating heat away from a heat sensitive device using bicarbonate compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932839A (en) * 1997-11-04 1999-08-03 Ren; Jane Method for dissipating heat away from a heat sensitive device using bicarbonate compositions

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