JPH01192147A - Substrate for semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the resin burrs of a sealing resin from generating by a method wherein a dam part is provided on the periphery of the rear on a side, where a semiconductor element is not mounted, of a substrate. CONSTITUTION:A dam part 16 is provided on the periphery of the rear of a substrate 15 and is used as an earthing electrode, whereby a groove, which is caused by the thickness of the electrode, in the substrate is stopped by the dam part 16. Accordingly, in case the substrate 15 is sealed in a metal mold 9 by a low-pressure transfer method, the gap between a bottom force 9-b and the substrate 15 is stopped. Thereby, resin burrs are not formed between electrodes even in a module subsequent to sealing. Incidentally, as for the material of the dam part 16, whatever materials can be used. Moreover, the dam part can be formed into such a dam part that a flexible material is coated on the surface of the dam part 16.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a substrate for a semiconductor device used in manufacturing IC cards, hybrid electronic devices, etc. [Prior Art] The following describes the conventional technology. A substrate for an industrial card module as a substrate for a semiconductor device will be explained with reference to the drawings.

Figures 3 (a), (b), and (Q) show I before sealing.
FIG. 4 is a top view (front side: semiconductor element side) of each C card module.

They are a bottom view (back side: pole side) and a side view.

FIGS. 4(-), (b), and (c) are a top view, a bottom view, and a sectional view, respectively, of the C-card module after sealing.

Figures 5(a) and 5(b) are respectively (d) in Figure 3.

It is an enlarged view of part (e).

Figure 6 (a), (b), (c) is an explanatory diagram of the process of sealing using a Tri-C card module substrate; FIG. 3 is a cross-sectional view of FIG. 3 f-f' after tightening and sealing;

Fig. 7 (a), (b), (c) is an explanatory diagram of the process of sealing using the Vi, Engineering C card module substrate; Fig. 6 (a), (t)), (c ) is a sectional view perpendicular to the plane of paper and taken along g-gl in FIG. 3.

In the figure, (1) is the base material, (2) is the conductor, (3) is the semiconductor element, (4) is the thin metal wire that electrically connects the conductor (2) and the semiconductor element (3), ( 5) is the I on the back side of the board.
An external arc that electrically connects the C card module to the outside, (6) a through hole that electrically connects the conductor [2] and the external electrode, (71 semiconductor element (3) and the base material (1) ) or D/B material 0 (
8) is the sealing resin, (9) is the mold, and (9-a) h upper metal! ,
(9-'b) tf lower mold, αO is the cavity where the sealing resin is injected inside the mold, (2) is the resin burr generated around the substrate between the external electrodes on the back of the substrate. ,
(2) is a groove provided in the mold (9), and Oa3, which is a passage called a gate and is a passage when the sealing resin (8) is injected from the outside into the cavity α0, is an external electrode ( 5) Gaps between the board and the mold (9), GNI of α4Vi conventional IC card module board)! pole, (to)
is the assembled board.

At the electrode on the back of the conventional C card module,
The GND electric oven α41 has a shape as shown in FIG. 3 (1)).

GND [hα4J is comparable to the IC card module by installing it as shown in the figure, but it is not suitable for normal hybrid I
In C^5 Next, let's look at the manufacturing process of the IC cart 0 module.

The sealing process will be explained using the deep low pressure transfer method, which is particularly relevant to this invention, as an example.

When manufacturing an IC card module, a semiconductor element (3) is bonded to a base material (1) using a D/B material (7), and then.

The semiconductor element (3) and the base material (1) are electrically connected using a thin metal wire (4) made of gold or aluminum. The substrate (to) is sealed with a sealing resin (8). To explain the sealing process for the IC card module shown in FIG. 4 using FIG. 7 as an example, as shown in FIG. α0), and after tightening the metal (9), the sealing resin (8) is injected from the outside through the gate@, and the mold (
9) Complete by curing inside.

[Problem to be solved by the invention]

The conventional substrate for a semiconductor device is constructed as described above, and the gap between the external electrodes (5) is a passage. (8) flows in and becomes resin Paris I.

Figures 6 and 7 show the generation status of Paris.

This invention was made in order to solve the above-mentioned problems, and produced a resin-encapsulated C card and a hybrid IC using a low-pressure transfer method that does not generate resin burrs αD of the sealing resin (8). The object of the present invention is to obtain a substrate for a semiconductor device that can be used for semiconductor devices.

[Means to solve the problem]

The substrate for a semiconductor device according to the present invention is provided with a dam portion around the back side of the substrate on the ^ side on which the semiconductor element is mounted. The provided dam part prevents the resin from flowing between the electrodes on the back surface and forming resin burrs when the substrate is sealed with resin using a mold.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS An IC card module board will be described below as an embodiment of the present invention with reference to the drawings. Figure 1(a),
(1)), (C) Top view C table IFI * semiconductor element side), bottom view (back side = 1! pole 911), and cross section at (1-d') of the C card module before sealing. Figures 2 and 2 are enlarged cross-sectional views taken along the line e-e in Figure 1. (a) shows the substrate placed in the lower mold and before sealing with sealing resin (1)) H-sealing. In the figure showing the situation sealed from the sealing tree rtIVc, (1) tanning αd, (Ll,
(to) are the same as each portion explained in FIGS. 3 to 7 in the prior art section.

Or a considerable portion. It is also a dam part provided on the back surface of the αati substrate (towards).

In this embodiment, the dam part provided around the back surface of the substrate (2) is made of the same material as the αeVi external electric FIA (5).

Hereinafter, the operation of this invention will be explained with reference to the drawings. As shown in Fig. 1, a dam part αet-ff is set as a GND (ground) electrode on the periphery of one substrate. Figure (b
), the groove on the substrate due to the thickness of the electric kettle is closed by the dam portion αQ. Therefore, when the substrate (to) is placed in the mold (9) and sealed by low pressure transfer.

As shown in Fig. 2(a), the gap between the lower mold (9-b) and the substrate (to) is closed, so even if the module is sealed, the gap shown in Fig. 2(b) will be closed. A resin burr I is formed between the electrodes as shown in the figure.

In the above embodiment, an external electrode (
The same metal material as in 5) was used, but the material of the dam part α0 can be any material.In addition, the dam part α whose surface is coated with a flexible material! The structure is not limited either.

In addition, in this embodiment, the dam part α0 is made of GND (ground) electric, but the dam part αG is GND [does not have to be i1/”k3 [Takuma effect] As mentioned above, this According to the invention, an IC card.

A dam part is provided around the back side of the substrate for semiconductor devices used when manufacturing Hybrid E-C, etc., so sealing can be performed using the low-pressure transfer method, making the device inexpensive.
Moreover, there is an effect that a product with good reliability can be obtained.

[Brief explanation of the drawing]

FIG. 1 is an outline drawing of a semiconductor device substrate according to one embodiment of this home, and FIG. 2 is a diagram showing the semiconductor device substrate shown in FIG. 1.
These are diagrams showing a process of sealing by a low-pressure transfer method using a mold and a cross section of a semiconductor device after sealing. Fig. 1 is an enlarged view of the cross section at e-θ', and Fig. 3 is a conventional IC card module board. 4 is an outline drawing and a d-a' cross-sectional view of an engineered C card module, and FIG. 5 is a diagram showing problems when manufacturing a conventional engineered C card module board by the low-voltage transfer method. Figure 3 ((1), (e)
6 and 7 are diagrams showing problems when sealing the conventional substrate shown in FIG. 3 using the low-pressure transfer method. FIG. 7 shows a process of sealing the illustrated substrate for a semiconductor device by a low-pressure transfer method using a mold, and a semiconductor device after sealing.
The figure is a sectional view taken along line gg' in FIG. 3 and perpendicular to the plane of the paper in FIG. 6. %fl in the figure) Vi base material, [2] is a conductor, and (3) is a semiconductor element. (4) is a thin metal wire, (5) is an external electric kettle, (6) Vi miss-through hole (7) is a D/B material,! 8) V′i sealing resin, (9-b) titT mold, α0 is cavity, (to)
2 is the gap, and (2) is the substrate and αQVi dam part. In addition, the same symbols in the two figures indicate the same or equivalent parts.

Claims (1)

[Claims] Used in semiconductor devices, such as IC cards and hybrid ICs, in which one or more semiconductor elements are mounted on a substrate made of glass epoxy material or ceramic, with circuits and conductors formed of metal steel or fired silver-palladium conductors. The conductor is characterized by having a dam part made of the same material as the external electrode or another material around the external electrode that is electrically connected to the outside on the back side of the substrate, on the side where the semiconductor element is not mounted. Substrate for semiconductor devices.