JPH01189153A - Lead frame material comprising copper or copper alloy - Google Patents
Lead frame material comprising copper or copper alloyInfo
- Publication number
- JPH01189153A JPH01189153A JP1393888A JP1393888A JPH01189153A JP H01189153 A JPH01189153 A JP H01189153A JP 1393888 A JP1393888 A JP 1393888A JP 1393888 A JP1393888 A JP 1393888A JP H01189153 A JPH01189153 A JP H01189153A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- copper
- wire
- bonded
- frame material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 10
- 239000010949 copper Substances 0.000 title claims abstract description 10
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 8
- 238000005096 rolling process Methods 0.000 abstract description 14
- 230000003746 surface roughness Effects 0.000 abstract description 7
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、集積回路素子の製造に使用されるリードフレ
ームの材料に係わり、特に、めっき層の介在なしにワイ
ヤを直接接合できるリードフレーム材に関する。DETAILED DESCRIPTION OF THE INVENTION "Industrial Application Field" The present invention relates to lead frame materials used in the manufacture of integrated circuit devices, and in particular to lead frame materials to which wires can be directly bonded without intervening plating layers. Regarding.
「従来の技術」
一般のリードフレームは、銅または銅合金からなる板材
を打抜成形し、さらに、ワイヤポンディングを行なう置
所に金または銀めっきを施して製造されている。このよ
うに金(銀)めっきを施すのは、金属板から打ち抜き成
形したままの状態では、金またはアルミニウム製のワイ
ヤを十分な強度で接合できないためである。``Prior Art'' A typical lead frame is manufactured by stamping and forming a plate made of copper or copper alloy, and then plating gold or silver at the wire bonding area. The reason why gold (silver) plating is applied in this manner is that gold or aluminum wires cannot be bonded with sufficient strength if they are punched and formed from a metal plate.
しかし、前記めっきの良否はワイヤポンディングに極め
て大きな影響を与えるため、リードフレーム材にめっき
を行なうに際しては極めて高い精度が要求され、生産性
が低いとともに、微小量であるとも貴金属を用いるため
コストが高いという欠点があった。However, since the quality of the plating has a very large effect on wire bonding, extremely high precision is required when plating lead frame materials, resulting in low productivity and high costs due to the use of precious metals even in minute quantities. It had the disadvantage of being high.
そこで、金(銀)めっきを施さずに、リードフレーム材
に直接ワイヤーポンディングができれば著しいコスト低
減が可能であるとの観点から、例えば特公昭62−46
071号公報においては、銅または調合金製のリードフ
レーム材の表面粗さを最大高さ(Rwax)で0.5μ
躊以下とすることにより、金ワイヤの直接接合が可能で
あるとの提案がなされている。Therefore, from the viewpoint that it would be possible to significantly reduce costs if wire bonding could be performed directly on the lead frame material without gold (silver) plating, for example,
In Publication No. 071, the surface roughness of the lead frame material made of copper or prepared alloy is set to 0.5μ in maximum height (Rwax).
It has been proposed that direct bonding of gold wires is possible by setting the bonding temperature to less than 100%.
「発明が解決しようとする課題」
しかし、本発明者らが実際に実験を行なった結果、Rn
+ax:0.5μm以下のリードフレーム材においても
、ワイヤの接合が必ずしもうまくいかない場合のあるこ
とが判明した。そこで、本発明者らはその原因について
さらに詳細な検討を試み、次のような知見を得るに至っ
た。"Problem to be solved by the invention" However, as a result of actual experiments conducted by the present inventors, Rn
+ax: It has been found that wire bonding may not always be successful even with lead frame materials of 0.5 μm or less. Therefore, the present inventors conducted a more detailed study on the cause and came to the following findings.
すなわち、−口にRm*x二0.5μm以下といっても
、実際にはその表面性状は様々であり、通常の高精度仕
上げ圧延によってRmax:0.5μm以下としただけ
のリードフレーム材では、第3図に示すように表面に多
数の鋭利な微小突起が残存している。このため、このリ
ードフレームにワイヤを接合すると、第4図に示すよう
に微小突起の谷間とワイヤ接合部との間に隙間が生じて
、その分接合面積が小さく、ワイヤの接合強度が安定し
にくいのである。さらにこの場合、前記隙間に水分等の
不純物が侵入することが考えられ、接合強度低下を引き
起こすおそれもあった。In other words, even though it is said that Rmax is 0.5 μm or less, the actual surface properties vary, and lead frame materials that have only been made Rmax: 0.5 μm or less by ordinary high-precision finish rolling cannot be used. As shown in FIG. 3, many sharp microprotrusions remain on the surface. For this reason, when a wire is bonded to this lead frame, a gap is created between the valley of the microprotrusions and the wire bonding part, as shown in Figure 4, which reduces the bonding area and stabilizes the bonding strength of the wire. It is difficult. Furthermore, in this case, impurities such as moisture may enter the gap, which may cause a decrease in bonding strength.
「課題を解決するための手段」
本発明は上記課題を解決するためになされたもので、銅
または銅合金からなるリードフレーム材表面の中心線平
均粗さ(Ra:JIS規格)を0.15μm以下にする
とともに、表面の微小突起の頭頂部を平坦面としたこと
を特徴とする。"Means for Solving the Problems" The present invention has been made to solve the above problems, and the center line average roughness (Ra: JIS standard) of the surface of a lead frame material made of copper or copper alloy is 0.15 μm. In addition to the following, it is characterized in that the tops of the microprotrusions on the surface are flat surfaces.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に使用するリードフレーム材の材質としては、無
酸素鋼、鉄人銅、錫入銅など従来同様のものが使用され
る。そして、まずこの板材を通常の圧延加工により、例
えば厚さ0.3mm程度に成形し、次いで通常の仕上げ
圧延を施して0.26mm程度とし、さらに必要に応じ
てパフ研摩、酸洗処理等を施す。次に、この板材に、表
面が極子滑面とされた圧延ロールにより、軽荷重をかけ
て仕上軽圧延を行なう。ここで、前記圧延ロールに要求
される表面粗さはRa:0.12μm以下であり、また
仕上軽圧延の際の荷重は、変形量が1〜5%程度となる
ように設定されることが望ましい。圧延ロール表面が前
記値より粗いと、所望の表面粗さが得られない。また1
%未満の加工量ではリードフレーム材表面に存在する微
小突起の頭頂部平坦化が図れず、他方5%を越えると新
たな突起を生じてリードフレーム材の表面粗さが悪化す
る。As for the lead frame material used in the present invention, materials similar to those conventionally used such as oxygen-free steel, iron copper, and tinned copper are used. Then, this plate material is first formed into a thickness of, for example, about 0.3 mm by normal rolling processing, then subjected to normal finish rolling to a thickness of about 0.26 mm, and further subjected to puff polishing, pickling treatment, etc. as necessary. give Next, this plate material is subjected to finish light rolling by applying a light load using a rolling roll having a pole-smooth surface. Here, the surface roughness required for the rolling roll is Ra: 0.12 μm or less, and the load during light finishing rolling may be set so that the amount of deformation is about 1 to 5%. desirable. If the surface of the rolling roll is rougher than the above value, the desired surface roughness cannot be obtained. Also 1
If the amount of machining is less than 5%, the tops of the minute protrusions existing on the surface of the lead frame material cannot be flattened, while if it exceeds 5%, new protrusions will be generated and the surface roughness of the lead frame material will deteriorate.
上記の仕上軽圧延により、リードフレーム材の表面をR
a:0.15μm以下とし、同時に微小突起の頭頂部を
潰して第1図に示すように平坦化する。The surface of the lead frame material is rounded by the above finishing light rolling.
a: 0.15 μm or less, and at the same time crush the tops of the microprotrusions to flatten them as shown in FIG.
Raが0.15μmより大きいと、ワイヤの接合部とリ
ードフレーム表面との間に微小な隙間が生じ、接合強度
が低下する。また、平坦化した頭頂部の直径は0.1〜
5μmであることが望ましく 、0.1μm未満では従
来品同様接合強度が不足し、5μmを越えると微小凹部
にワイヤが噛み込む率が低下してやはり接合強度が低下
する。If Ra is larger than 0.15 μm, a minute gap will be created between the bonding portion of the wire and the surface of the lead frame, reducing the bonding strength. In addition, the diameter of the flattened top of the head is 0.1~
It is desirable that the thickness be 5 μm; if it is less than 0.1 μm, the bonding strength will be insufficient as in conventional products, and if it exceeds 5 μm, the rate at which the wire will get caught in the minute recesses will decrease, and the bonding strength will also decrease.
以上の構成からなるリードフレーム材においては、その
表面に金またはアルミニウム等のワイヤを接合すると、
ワイヤの接合部が第2図に示すように表面の微小凹部の
奥まで略隙間なく噛み込むとともに、微小突起の平坦な
各頭頂部に強く圧接され、この頭頂部に強固に接合され
る。これにより、全体として極めて強固な接合強度を得
ることができ、ワイヤ直接接合の信頼性を格段に向上す
ることが可能である。また、リードフレームの表面とワ
イヤの接合部との間に隙間が生じにくいので、ここに水
分等の不純物が侵入して接合強度を低下させるおそれが
なく、この点からも信頼性向上が図れる。When a wire made of gold or aluminum is bonded to the surface of the lead frame material having the above structure,
As shown in FIG. 2, the bonded portion of the wire fits into the micro-recesses on the surface almost without gaps, and is strongly pressed against the flat tops of the micro-protrusions to be firmly bonded to the tops. As a result, it is possible to obtain extremely strong bonding strength as a whole, and it is possible to significantly improve the reliability of direct wire bonding. Furthermore, since a gap is unlikely to be formed between the surface of the lead frame and the bonded portion of the wire, there is no risk of impurities such as moisture entering there and reducing the bonding strength, and reliability can be improved from this point as well.
なお、上側では仕上軽圧延により微小突起の平坦化を図
っていたが、本発明のリードフレーム材は上記方法のみ
に限られず、例えばポリッシングやエツチング等によっ
ても製造可能である。Although the fine protrusions on the upper side were flattened by finishing light rolling, the lead frame material of the present invention is not limited to the above method, and can also be manufactured by, for example, polishing or etching.
「実施例」 次に実施例を挙げて、本発明の効果を実証する。"Example" Next, examples will be given to demonstrate the effects of the present invention.
C19400(CDA番号)の銅合金板から通常の圧延
加工により0.25厚X25幅X 30mm長のリード
フレーム材を6枚成形した。Six lead frame materials each having a thickness of 0.25 mm, a width of 25 mm, and a length of 30 mm were formed from copper alloy plates of C19400 (CDA number) by normal rolling.
次いで、そのうち3枚に、1svo1%の硫酸水溶液に
よる酸洗処理を施したのち、表面粗さがR8=0.09
μmの表面平滑化圧延ロールにより、変形量約2%で仕
上軽圧延を行なった。Next, three of the sheets were pickled with a 1svo1% sulfuric acid aqueous solution, and the surface roughness was R8 = 0.09.
Finish light rolling was performed using a μm surface smoothing roll with a deformation amount of about 2%.
そして、前記6枚のリードフレーム材の表面状態を表面
粗さ計および顕微鏡により測定するとともに、これらを
自動ワイヤ接合装置にセットして、ワイヤボンディング
を行なった。その条件を以下に示す。Then, the surface condition of the six lead frame materials was measured using a surface roughness meter and a microscope, and these were set in an automatic wire bonding device to perform wire bonding. The conditions are shown below.
接合方法:サーモソニック法 ワイヤ材質:金 ワイヤ直径:25μm リードフレーム温度= 225℃ 接合荷重=35g 超音波用カニ 0.2W 超音波発生時間: 20m5ec。Joining method: Thermosonic method Wire material: gold Wire diameter: 25μm Lead frame temperature = 225℃ Bonding load = 35g Ultrasonic Crab 0.2W Ultrasonic generation time: 20m5ec.
次に、接合の終わったワイヤをフックにより引き上げて
、ワイヤを切断するのに要した引上荷重を測定した。併
せて、接合強度の評価も行なった。Next, the joined wire was pulled up using a hook, and the lifting load required to cut the wire was measured. At the same time, the bonding strength was also evaluated.
この評価は、接合部がワイヤ引上荷重に耐えてワイヤ切
断に至るまで何の変化も見られない場合が「○」、接合
部が一部剥離した後ワイヤが切断したものが「Δ」、完
全に剥離したものが「×」である。This evaluation is ``○'' if the joint part withstands the wire pulling load and no change is seen until the wire breaks, and ``Δ'' if the wire breaks after the joint part peels off. Completely peeled off is marked "×".
その結果を次長に示す。なお表中、実1〜3は実施例、
比1〜3は比較例である。また平坦長とは、頭頂・部の
平均直径を示している。The results will be presented to the deputy director. In addition, in the table, Examples 1 to 3 are examples,
Ratios 1 to 3 are comparative examples. Moreover, the flat length indicates the average diameter of the crown/part of the head.
上表から明らかなように、実施例1〜3のリードフレー
ム材では、実際の使用に耐えうる高い接合強度が得られ
た。As is clear from the above table, the lead frame materials of Examples 1 to 3 had high bonding strengths that could withstand actual use.
「発明の効果」
以上説明したように、本発明に係わる銅または銅合金か
らなるリードフレーム材は、表面の中心線平均粗さ(R
a)を0.15μm以下にするとともに、表面の微小突
起の頭頂部を平坦化したものなので、その表面にワイヤ
を接合すると、ワイヤの接合部が表面の微小凹部の奥ま
で噛み込み、同時に微小突起の平坦な各頭頂部に強く圧
接され、この頭頂部に強固に接合する。したがって、接
合部全体として極めて強固な接合強度を得ることができ
、ワイヤポンディングの信頼性を格段に向上することが
できる。また、リードフレーム材表面とワイヤ接合部と
の間に間隙が生じないので、ここに水分等の不純物が侵
入して接合強度を低下させるおそれがない。"Effects of the Invention" As explained above, the lead frame material made of copper or copper alloy according to the present invention has a center line average roughness (R
a) is 0.15 μm or less, and the tops of the microprotrusions on the surface are flattened, so when a wire is bonded to the surface, the bonded part of the wire will bite deep into the microscopic recesses on the surface, and at the same time It is strongly pressed against each flat top of the protrusion, and is firmly joined to this top of the head. Therefore, extremely strong bonding strength can be obtained for the entire bonding portion, and the reliability of wire bonding can be significantly improved. Furthermore, since no gap is created between the surface of the lead frame material and the wire joint, there is no risk of impurities such as moisture entering there and reducing the joint strength.
第1図は本発明に係わる銅または銅合金からなるリード
フレーム材の断面拡大図、第2図はワイヤ接合状態にお
ける同リードフレーム材の断面拡大図である。
一方、第3図は従来のリードフレーム材の断面拡大図、
第4図はそのワイヤ接合状態における断面拡大図である
。FIG. 1 is an enlarged cross-sectional view of a lead frame material made of copper or copper alloy according to the present invention, and FIG. 2 is an enlarged cross-sectional view of the same lead frame material in a wire-bonded state. On the other hand, Figure 3 is an enlarged cross-sectional view of a conventional lead frame material.
FIG. 4 is an enlarged cross-sectional view of the wire bonded state.
Claims (1)
するとともに、表面の微小突起の頭頂部を平坦化したこ
とを特徴とする銅または銅合金からなるリードフレーム
材。A lead frame material made of copper or copper alloy, characterized in that the centerline average roughness (Ra) of the surface is 0.15 μm or less, and the tops of the microprotrusions on the surface are flattened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63013938A JPH0775251B2 (en) | 1988-01-25 | 1988-01-25 | Lead frame material manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63013938A JPH0775251B2 (en) | 1988-01-25 | 1988-01-25 | Lead frame material manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01189153A true JPH01189153A (en) | 1989-07-28 |
JPH0775251B2 JPH0775251B2 (en) | 1995-08-09 |
Family
ID=11847143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63013938A Expired - Lifetime JPH0775251B2 (en) | 1988-01-25 | 1988-01-25 | Lead frame material manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0775251B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5455453A (en) * | 1991-07-01 | 1995-10-03 | Sumitomo Electric Industries, Ltd. | Plastic package type semiconductor device having a rolled metal substrate |
JP2002083917A (en) * | 2000-06-28 | 2002-03-22 | Noge Denki Kogyo:Kk | Lead frame having protrusions on surface, method of manufacturing the same, semiconductor device and manufacturing method thereof |
JP2006108279A (en) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | Lead frame and its manufacturing method |
US7170172B2 (en) * | 2001-12-13 | 2007-01-30 | Nec Electronics Corporation | Semiconductor device having a roughened surface |
JP2007088042A (en) * | 2005-09-20 | 2007-04-05 | Tdk Corp | Ptc element and manufacturing method thereof |
JP2007305870A (en) * | 2006-05-12 | 2007-11-22 | Tdk Corp | Ptc element |
US7417527B2 (en) | 2006-03-28 | 2008-08-26 | Tdk Corporation | PTC element |
CN114752980A (en) * | 2022-04-13 | 2022-07-15 | 崇辉半导体有限公司 | Lead frame roughening process |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61234554A (en) * | 1985-04-11 | 1986-10-18 | Mitsubishi Electric Corp | Manufacture of leadframe |
-
1988
- 1988-01-25 JP JP63013938A patent/JPH0775251B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61234554A (en) * | 1985-04-11 | 1986-10-18 | Mitsubishi Electric Corp | Manufacture of leadframe |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5455453A (en) * | 1991-07-01 | 1995-10-03 | Sumitomo Electric Industries, Ltd. | Plastic package type semiconductor device having a rolled metal substrate |
US5643834A (en) * | 1991-07-01 | 1997-07-01 | Sumitomo Electric Industries, Ltd. | Process for manufacturing a semiconductor substrate comprising laminated copper, silicon oxide and silicon nitride layers |
JP2002083917A (en) * | 2000-06-28 | 2002-03-22 | Noge Denki Kogyo:Kk | Lead frame having protrusions on surface, method of manufacturing the same, semiconductor device and manufacturing method thereof |
US7170172B2 (en) * | 2001-12-13 | 2007-01-30 | Nec Electronics Corporation | Semiconductor device having a roughened surface |
US7560372B2 (en) | 2001-12-13 | 2009-07-14 | Nec Electronics Corporation | Process for making a semiconductor device having a roughened surface |
JP2006108279A (en) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | Lead frame and its manufacturing method |
JP2007088042A (en) * | 2005-09-20 | 2007-04-05 | Tdk Corp | Ptc element and manufacturing method thereof |
US7326889B2 (en) | 2005-09-20 | 2008-02-05 | Tdk Corporation | PTC element and production process thereof |
US7417527B2 (en) | 2006-03-28 | 2008-08-26 | Tdk Corporation | PTC element |
JP2007305870A (en) * | 2006-05-12 | 2007-11-22 | Tdk Corp | Ptc element |
CN114752980A (en) * | 2022-04-13 | 2022-07-15 | 崇辉半导体有限公司 | Lead frame roughening process |
Also Published As
Publication number | Publication date |
---|---|
JPH0775251B2 (en) | 1995-08-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101004866B1 (en) | Copper bonding or superfine wire with improved bonding and corrosion properties | |
JP4212641B1 (en) | Aluminum ribbon for ultrasonic bonding | |
JPS6297360A (en) | Minute high impurity copper wire, whose surface is coated, for bonding wire for semiconductor device | |
JPH01189153A (en) | Lead frame material comprising copper or copper alloy | |
US5167794A (en) | Method for producing lead frame material | |
JPS63235440A (en) | Fine copper wire and its production | |
JPS6365036A (en) | Fine copper wire and its production | |
JP3313006B2 (en) | Copper alloy lead frame for bare bond | |
JPH1098063A (en) | Gold alloy wire for wedge bonding | |
JPH0775252B2 (en) | Lead frame material manufacturing method | |
JPS60238093A (en) | Production of composite aluminum-stainless steel material | |
JPS6285453A (en) | Lead frame material for ic | |
JPS6246071B2 (en) | ||
JPS62287634A (en) | Fine wire for semiconductor element connection | |
JPH08958B2 (en) | Manufacturing method of finish heat treatment copper wire for bonding of semiconductor element | |
JPS61224443A (en) | Bonding wire for semiconductor device | |
SU1066694A1 (en) | Method of producing steel-aluminium wire | |
JPH04202065A (en) | Method for joining oxide superconductor and metal superconductor | |
JPH0749794Y2 (en) | Gold bump for wireless bonding | |
JPS63247325A (en) | Fine copper wire and its production | |
RU2232076C1 (en) | Laminated interlayer based on aluminum for bimetals production | |
JP4318533B2 (en) | Ball bump forming ribbon | |
JPS5965439A (en) | Bonding wire | |
JPH0215886A (en) | Manufacture of inlay-clad material | |
JPH02268984A (en) | Manufacture of deformed clad material |