JPH01188308A - Dicing device of semiconductor wafer - Google Patents
Dicing device of semiconductor waferInfo
- Publication number
- JPH01188308A JPH01188308A JP63013012A JP1301288A JPH01188308A JP H01188308 A JPH01188308 A JP H01188308A JP 63013012 A JP63013012 A JP 63013012A JP 1301288 A JP1301288 A JP 1301288A JP H01188308 A JPH01188308 A JP H01188308A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- stage
- water
- ice
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 18
- 239000010432 diamond Substances 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 claims 5
- 238000000034 method Methods 0.000 abstract description 6
- 239000000498 cooling water Substances 0.000 abstract description 5
- 238000007710 freezing Methods 0.000 abstract description 3
- 230000008014 freezing Effects 0.000 abstract description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 239000002351 wastewater Substances 0.000 description 2
- WKVZMKDXJFCMMD-UVWUDEKDSA-L (5ar,8ar,9r)-5-[[(2r,4ar,6r,7r,8r,8as)-7,8-dihydroxy-2-methyl-4,4a,6,7,8,8a-hexahydropyrano[3,2-d][1,3]dioxin-6-yl]oxy]-9-(4-hydroxy-3,5-dimethoxyphenyl)-5a,6,8a,9-tetrahydro-5h-[2]benzofuro[6,5-f][1,3]benzodioxol-8-one;azanide;n,3-bis(2-chloroethyl)-2-ox Chemical compound [NH2-].[NH2-].Cl[Pt+2]Cl.ClCCNP1(=O)OCCCN1CCCl.COC1=C(O)C(OC)=CC([C@@H]2C3=CC=4OCOC=4C=C3C(O[C@H]3[C@@H]([C@@H](O)[C@@H]4O[C@H](C)OC[C@H]4O3)O)[C@@H]3[C@@H]2C(OC3)=O)=C1 WKVZMKDXJFCMMD-UVWUDEKDSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェハのダイシング装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor wafer dicing apparatus.
第３図に示すように、従来の技術で半導体ウェハ３の完
全切断を行なう場合、フラットリング４に貼付けられた
ウェハシート７を介して、半導体ウェハが、冷却バイブ
ロを有するステージ５の主面上の真空吸着溝８に、真空
吸着により固定され、切削部に当たるダイヤモンドブレ
ード１の近傍に、噴射ノズル２より冷却水を噴射しなが
ら、ダイヤモンドブレードｌで、順に半導体ウェハ３を
ダイシングしていた。As shown in FIG. 3, when the semiconductor wafer 3 is completely cut using the conventional technique, the semiconductor wafer is placed on the main surface of the stage 5 having the cooling vibro through the wafer sheet 7 attached to the flat ring 4. The semiconductor wafer 3 was successively diced with the diamond blade 1 while jetting cooling water from the jet nozzle 2 near the diamond blade 1, which was fixed by vacuum suction into the vacuum suction groove 8 of the diamond blade 1 and corresponded to the cutting part.
前述した従来のダイシング装置及びダイシング方法では
、半導体ウェハ３を貫いてウェハシート７にまでダイヤ
モンドブレードｌで切り込むいわゆる完全切断を行なう
場合、ウェハシート７には一般に塩化ビニル、ポリエチ
レンなどの高分子材料が使われていた。ここで、ダイヤ
モンドブレードｌに生じる摩擦熱の除去は、噴出ノズル
２より出る水と、ステージ５に設けた冷却機構の冷却バ
イブロで行なっている。しかし、ウェハシート７は高分
子材料であるため、熱伝導度か１０ Ｗ／ｃｍ℃程度
と、一般の金属などの数Ｗ／Ｃｍ℃と比べて、十分の一
程度と悪い。このため、十分な冷却効果が得られなかっ
た。また、ウェハシート７にダイヤモンドブレード１が
切り込んだ場合、ウェハシート７が断熱材として働き、
熱が放散せず、この摩擦熱によジ著しくダイヤモンドブ
レード１の寿命を短かくするという欠点があった。In the conventional dicing apparatus and dicing method described above, when performing so-called complete cutting in which the diamond blade l cuts through the semiconductor wafer 3 to the wafer sheet 7, the wafer sheet 7 generally contains a polymeric material such as vinyl chloride or polyethylene. It was used. Here, the frictional heat generated in the diamond blade 1 is removed by water emitted from the jet nozzle 2 and a cooling vibro of a cooling mechanism provided on the stage 5. However, since the wafer sheet 7 is made of a polymer material, its thermal conductivity is about 10 W/cm°C, which is about one-tenth of the several W/cm°C of general metals. For this reason, a sufficient cooling effect could not be obtained. Furthermore, when the diamond blade 1 cuts into the wafer sheet 7, the wafer sheet 7 acts as a heat insulating material.
There was a drawback that heat was not dissipated and the life of the diamond blade 1 was significantly shortened due to this frictional heat.
本発明の目的は、前記欠点が解決され、熱の放散が良好
で、ダイヤモンドブレードの寿命が伸びるようにした半
導体ウェハのダイシング装置ｔ−提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor wafer dicing apparatus that overcomes the above-mentioned drawbacks, provides good heat dissipation, and extends the life of the diamond blade.
本発明の構成は、主面上に半導体ウェハを載置し、かつ
冷却機構を有するステージと、前記ステージの上方に設
けられたダイヤモンドブレードと、前記ステージの上方
に設けられた水供給装置とを有する半導体ウェハのダイ
シング装置において、前記半導体ウェハと水の入る凹部
を有する金属体を前記ステージの主面に設けたことを特
徴とする。The configuration of the present invention includes a stage on which a semiconductor wafer is placed on the main surface and has a cooling mechanism, a diamond blade provided above the stage, and a water supply device provided above the stage. In the semiconductor wafer dicing apparatus, a metal body having a recess into which the semiconductor wafer and water enter is provided on the main surface of the stage.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の半導体ウェハのダイシ
ング装置の断面図である。同図において、本実施例のダ
イシング装置は、ステージ５の主面上に凹部を有する金
属体１１が載置され、このステージ５の主面に設けられ
た真空吸着溝８により、真空吸着による固定がされる。FIG. 1 is a sectional view of a semiconductor wafer dicing apparatus according to a first embodiment of the present invention. In the figure, the dicing apparatus of this embodiment has a metal body 11 having a concave portion placed on the main surface of a stage 5, and is fixed by vacuum suction using vacuum suction grooves 8 provided on the main surface of the stage 5. is done.
次に、水供給パイプ９よシ水が凹部ヲ肩する金属体１１
に入れられ、ステージ５に設けられた冷却バイブロ中に
、例えばフロンガスなどを用いて、これにより瞬時に凍
結され、氷ｌＯとなる。この氷１０の主面上に、半導体
ウェハ３が置かれ、氷１０との被着面において半導体ウ
ェハ３の有する熱エネルギにより、−瞬氷１’Ｏが解け
、再び凍結することにより、この半導体ウェハ３は完全
に固定される。この固定された半導体ウェハ３を、ダイ
ヤモンドブレードｌで、近傍に設けられた噴出ノズル２
より冷却水を当てながら、ダイシングする。このとき、
凹部を有する金属体１１の材料としては、ステンレスや
アルミニウムなどの加工しやすい金属であればよい。ま
た、氷１０の厚さは、水供給パイプ９から供給する水の
量を一定量にし、２０〜５０μｍ程度とすれば、充分で
ある。Next, from the water supply pipe 9, there is a metal body 11 that carries water over the recess.
In the cooling vibro provided on the stage 5, using, for example, chlorofluorocarbon gas, the liquid is instantly frozen to become ice lO. The semiconductor wafer 3 is placed on the main surface of the ice 10, and the thermal energy of the semiconductor wafer 3 on the surface adhering to the ice 10 melts the instantaneous ice 1'O and freezes it again. The wafer 3 is completely fixed. This fixed semiconductor wafer 3 is passed through a spout nozzle 2 provided nearby using a diamond blade l.
Dice while applying cooling water. At this time,
The material of the metal body 11 having the recessed portion may be any metal that is easy to process, such as stainless steel or aluminum. Further, the thickness of the ice 10 is sufficient if the amount of water supplied from the water supply pipe 9 is kept constant and the thickness is about 20 to 50 μm.
本実施例の半導体ウェハのダイシング装置への固着方法
は、ステージ５上に設けた金属体１１の凹部に水供給装
置の水供給パイプ９からの水を入れ、ステージ５上に設
けた冷却機構の冷却バイ１６により凍結させた上で、ダ
イヤモンドブレードｌによるダイシングをすることを主
な特徴とする。The method of fixing a semiconductor wafer to a dicing apparatus according to this embodiment is to fill the concave portion of the metal body 11 provided on the stage 5 with water from the water supply pipe 9 of the water supply device, and then to use the cooling mechanism provided on the stage 5. The main feature is that the material is frozen using a cooling device 16 and then diced using a diamond blade 1.
第２図は本発明の第２の実施例の半導体ウェハのダイシ
ング装置の断面図である。同図において、本実施例のダ
イシング装置は、噴出ノズル２がない点が前記第１の実
施例と異なる主な点である。FIG. 2 is a sectional view of a semiconductor wafer dicing apparatus according to a second embodiment of the present invention. In the figure, the main difference between the dicing apparatus of this embodiment and the first embodiment is that there is no ejection nozzle 2.
従来、半導体ウェハ３のダイシングは、噴出ノズルより
冷却水を常時噴出し、ダイシングブレード１を冷却して
いたが、本実施例の装置を用いることにより、ダイシン
グブレード１の冷却は不要となる。なぜならば、水が瞬
時に凍結する温度まで、半導体ウェハ３自体が冷えてい
るからである。本実施例では、この凍結が瞬時に行な軌
れる必要があるため、凹部を有する金属体１１の材質も
、加工しやすいばかりでなく、高熱伝導率の材質例えば
銅やタングステンなどを用いる。Conventionally, when dicing the semiconductor wafer 3, cooling water was constantly jetted from a jet nozzle to cool the dicing blade 1, but by using the apparatus of this embodiment, cooling the dicing blade 1 is no longer necessary. This is because the semiconductor wafer 3 itself has cooled down to a temperature at which water instantly freezes. In this embodiment, since this freezing must be instantaneous, the material of the metal body 11 having the recessed portion is not only easy to process but also has a high thermal conductivity, such as copper or tungsten.
本実施例では、ダイヤモンドブレード１に冷却水を当て
なくて良いため、多量の水が節約でき、又廃水設備本簡
単になる。その上、ダイシング中に水を使用しない為°
、ダイシングで生じる切り屑も粉状であり、圧縮空気等
を用いれば、簡単に除去できる等多くの利点を有する。In this embodiment, since it is not necessary to apply cooling water to the diamond blade 1, a large amount of water can be saved, and the wastewater equipment can be simplified. Moreover, since no water is used during dicing
The chips produced during dicing are also in the form of powder, and have many advantages, such as being easily removed using compressed air or the like.
以上説明したように、本発明は、冷却機構を有するステ
ージの主面上に凹部を有する金属体を設け、半導体ウェ
ハの固着を、水供給パイプよシ供給される水を用いて、
半導体ウェハと金属体との間の凍結方法により行ない、
ダイヤモンドブレードの冷却効果を著しく向上させ、し
かもダイヤモンドグレードに常時多量の水を必ずしも噴
射する必要もなくなるため、多量の水が節約でき、廃水
設備も簡単にでき、半導体装置の製造コストを低減する
効果がある。As explained above, the present invention provides a metal body having a recess on the main surface of a stage having a cooling mechanism, and fixes a semiconductor wafer using water supplied from a water supply pipe.
Performed by a freezing method between a semiconductor wafer and a metal body,
Significantly improves the cooling effect of the diamond blade, and eliminates the need to constantly spray large amounts of water onto the diamond grade, saving a large amount of water, simplifying wastewater facilities, and reducing semiconductor device manufacturing costs. There is.
第１図は本発明の第１の実施例の半導体ウェハのダイシ
ング装置の断面図、第２図は本発明の第２の実施例の半
導体ウェハのダイシング装置の断面図、第３図は従来の
半導体ウェハのダイシング装置の断面図である。
ｌ・・・・・・ダイヤモンドブレード、２・・・・・・
噴出ノズル、３・・・・・・半導体ウェハ、４・・・・
・・フラットリング、５・・・・・・ステージ、６・・
・・・・冷却パイプ、７・・・・・・ウェハシート、８
・・・・・・真空吸着溝、９・・・・・・水供給パイプ
、１０・・・・・・氷、１１・・・・・・凹部を有する
金属体。
代理人 弁理士 内 原 音
！２回FIG. 1 is a cross-sectional view of a semiconductor wafer dicing apparatus according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of a semiconductor wafer dicing apparatus according to a second embodiment of the present invention, and FIG. FIG. 2 is a cross-sectional view of a semiconductor wafer dicing apparatus. l...Diamond blade, 2...
Ejection nozzle, 3... Semiconductor wafer, 4...
...Flat ring, 5... Stage, 6...
...Cooling pipe, 7...Wafer sheet, 8
... Vacuum suction groove, 9 ... Water supply pipe, 10 ... Ice, 11 ... Metal body having a recess. Agent patent attorney Oto Uchihara! twice
Claims (2)
有するステージと、前記ステージの上方に設けられたダ
イヤモンドブレードと、前記ステージの上方に設けられ
た水供給装置とを有する半導体ウェハのダイシング装置
において、前記半導体ウェハと水の入る凹部を有する金
属体を前記ステージの主面に設けたことを特徴とする半
導体ウェハのダイシング装置。(1) A semiconductor wafer having a stage on which a semiconductor wafer is placed on its main surface and having a cooling mechanism, a diamond blade provided above the stage, and a water supply device provided above the stage. A dicing apparatus for semiconductor wafers, characterized in that a metal body having a recess into which the semiconductor wafer and water enter is provided on the main surface of the stage.
冷却パイプを有している特許請求の範囲第１項記載の半
導体ウェハのダイシング装置。(2) The semiconductor wafer dicing apparatus according to claim 1, wherein the cooling mechanism has a cooling pipe that cools water that has entered the recess to turn it into ice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013012A JPH01188308A (en) | 1988-01-22 | 1988-01-22 | Dicing device of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63013012A JPH01188308A (en) | 1988-01-22 | 1988-01-22 | Dicing device of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01188308A true JPH01188308A (en) | 1989-07-27 |
Family
ID=11821251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63013012A Pending JPH01188308A (en) | 1988-01-22 | 1988-01-22 | Dicing device of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01188308A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6588308B2 (en) | 1999-01-19 | 2003-07-08 | Meco Equipment Engineers B.V. | Method and device for separating products, mounted on a common substrate, from each other along (a) cutting line(s) |
| KR100817276B1 (en) * | 2006-11-03 | 2008-03-27 | 삼성전기주식회사 | Dicing device and dicing method thereof |
| US7462312B2 (en) | 2004-06-07 | 2008-12-09 | Fujitsu Limited | Method of fabricating element having microstructure |
| KR100953078B1 (en) * | 2008-02-11 | 2010-04-19 | 에스티에스반도체통신 주식회사 | Wafer sawing equipment improving a cooling function |
| JP5953565B1 (en) * | 2015-02-23 | 2016-07-20 | 防衛装備庁長官 | Frozen pin chuck device and frozen pin chuck method |
| CN112151446A (en) * | 2020-09-24 | 2020-12-29 | 长江存储科技有限责任公司 | Wafer cutting and fixing method and device |
-
1988
- 1988-01-22 JP JP63013012A patent/JPH01188308A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6588308B2 (en) | 1999-01-19 | 2003-07-08 | Meco Equipment Engineers B.V. | Method and device for separating products, mounted on a common substrate, from each other along (a) cutting line(s) |
| US7462312B2 (en) | 2004-06-07 | 2008-12-09 | Fujitsu Limited | Method of fabricating element having microstructure |
| KR100817276B1 (en) * | 2006-11-03 | 2008-03-27 | 삼성전기주식회사 | Dicing device and dicing method thereof |
| KR100953078B1 (en) * | 2008-02-11 | 2010-04-19 | 에스티에스반도체통신 주식회사 | Wafer sawing equipment improving a cooling function |
| JP5953565B1 (en) * | 2015-02-23 | 2016-07-20 | 防衛装備庁長官 | Frozen pin chuck device and frozen pin chuck method |
| JP2016157732A (en) * | 2015-02-23 | 2016-09-01 | 防衛装備庁長官 | Refrigeration pin chuck device and refrigeration pin chuck method |
| CN112151446A (en) * | 2020-09-24 | 2020-12-29 | 长江存储科技有限责任公司 | Wafer cutting and fixing method and device |
| CN112151446B (en) * | 2020-09-24 | 2023-09-08 | 长江存储科技有限责任公司 | Wafer cutting and fixing method and device thereof |
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