JPH06302692A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To more rapidly, stably and satisfactorily dice a wafer. CONSTITUTION:An apparatus for manufacturing a semiconductor device to divide a wafer 3 along a predetermined dicing line comprises a wafer holding table 11 for heating and insulating the wafer 3 at a predetermined temperature, and a nozzle 19 for blowing cooling medium to a surface of the heated and insulated wafer 3 to locally cool it, thereby dividing the wafer 3 to individual elements by thermal impact.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus and method, and more particularly to a method and apparatus for dividing (dicing) a semiconductor wafer into a large number of elements formed on the wafer. .

[0002]

2. Description of the Related Art For example, in a semiconductor device manufacturing process,
There is a step of dividing a large number of elements formed on a wafer into individual elements. Conventional methods for dividing a wafer into individual elements include a diamond point scribing method, a laser scribing method, and a diamond blade dicing method.

In the diamond point scribing method, fine crushing grooves are formed on the surface of a semiconductor wafer along a dicing line of the semiconductor wafer with a diamond cutter, and then mechanical force is applied to the wafer.
A method of dividing the wafer along the dicing line.

However, this method has a problem in that the stability of the division is impaired due to the wear of the diamond cutter, variations occur in the division direction, and cracks and cracks are likely to occur.

On the other hand, the laser scribing method is a method of irradiating a semiconductor wafer with laser light such as YAG to partially melt it and form a groove along a dicing line.
However, in this method, there is a problem in that thermal distortion remains on the wafer, chip destruction occurs, and the melted wafer material scatters and adheres to nearby chips. Also,
Since a high-power laser oscillator is required, this may cause an increase in the size of the device and an increase in production cost.

In the diamond blade dicing method, an apparatus as shown in FIG. 7 is used, and a blade 1 made by sintering fine diamond particles on the blade edge of a thin wheel is rotated at a high speed, so that the dicing table 2 is rotated. It is a method of cutting the wafer 3 held by the wafer along the dicing line 3a. The cutting depth can be freely set, and at the same time, the wafer 3 can be completely cut.

The features of this method are that a stable cutting groove width and a deep cutting groove can be obtained, that there are few cracks and chips,
In addition, since it is cut at high speed, it is highly productive. Therefore, the diamond blade dicing method,
It is currently the most widely and commonly used method compared to the other two methods mentioned above.

[0008]

By the way, the conventional diamond blade dicing method has problems to be solved as described below. First, the blade 1
Has a problem of rigidity, and requires a thickness of 15 to 30 μm. If a margin is included, the cutting width becomes 60 to 80 μm, which causes a large loss.

Secondly, due to the insulating property of high-purity pure water, the silicon chips produced during cutting are easily charged. There is a problem that silicon chips charged with static electricity or the like tend to adhere to the front and back surfaces of the wafer 3.

If these chips adhere to the wafer 3, they adversely affect the product. Especially when the pellet is an element such as a solid-state image sensor or an ultraviolet erasable memory where the optical characteristics of the chip surface severely affect its function, the production of these chips creates an optical shadow when they adhere to the surface. It causes a significant decrease in yield. Pixel size or memory size is 5 due to high integration in recent years.
This problem is becoming more and more serious as it is becoming smaller than μm.

In the present technology as a countermeasure against this problem, carbon dioxide is mixed with pure water to reduce the specific resistance of the cutting water. However, since nickel, which is the base material of the blade 1, reacts with carbonic acid to melt. There is a problem that the life of the blade 1 is shortened. Further, the cutting speed may be limited to about 75 mm / sec due to wear of the blade 1.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device manufacturing apparatus and method capable of performing wafer dicing at higher speed, stability, and satisfactorily. It is a thing.

[0013]

A first means of the present invention is, in a semiconductor device manufacturing apparatus for dividing a wafer along a predetermined dicing line, heating means for heating the wafer and cooling for cooling the wafer. And a means for manufacturing the semiconductor device.

The second means is a method of manufacturing a semiconductor device in which a wafer is divided along a predetermined dicing line, the first step of heating the wafer to a predetermined temperature and keeping it warm, and the step of heating and keeping the wafer warm. A second step of dividing the wafer by thermal shock by locally cooling the surface is provided, and is a method of manufacturing a semiconductor device.

A third means is a method of manufacturing a semiconductor device in which a wafer is divided along a predetermined dicing line, the first step of cooling the wafer to a predetermined temperature and keeping it warm, and the surface of the wafer kept warm. And a second step of dividing the wafer by thermal shock by locally heating the wafer.

A fourth means is the semiconductor device according to the second and third means, wherein a notch groove is provided along the dicing line of the wafer before heating or cooling the wafer. It is a manufacturing method.

A fifth means is the same as the third means,
Before heating or cooling the wafer, notch grooves are provided along the dicing line of the wafer,
A method of manufacturing a semiconductor device is characterized in that a stress is generated in the notch by expansion of the liquid by supplying a liquid into the notch and cooling and solidifying the liquid.

A sixth means is a method of manufacturing a semiconductor device according to the fourth or fifth means, characterized in that the cutout groove is formed by etching.
A seventh means is the same as the first means, wherein the heating means includes a wafer holding table for holding the wafer, and a heating unit for heating the wafer held on the wafer holding table to a predetermined temperature and keeping the temperature. The cooling means comprises a nozzle for spraying a cooling medium cooled to a predetermined temperature on the wafer heated and kept warm by the heating means to cause a thermal shock to the portion, and the nozzle is used as a dicing line for the wafer. An apparatus for manufacturing a semiconductor device, comprising: a drive mechanism for driving the semiconductor device.

An eighth means is the above-mentioned seventh means,
The nozzle is a semiconductor device manufacturing apparatus characterized in that it has a slit-shaped blowout hole for blowing a cooling medium over a predetermined length on a dicing line of the wafer.

A ninth means is the above first means,
The cooling means is a cooling body, a cooling means for cooling the cooling body to a predetermined temperature, and the cooling body is pressed to a wafer which is heated to a predetermined temperature by the heating means and kept warm,
A semiconductor device manufacturing apparatus, comprising: a drive mechanism that causes a thermal shock in that portion.

The tenth means is the same as the first means, but the cooling means cools the wafer holding table for holding the wafer with a predetermined liquid interposed between the wafer holding table and the wafer. In this way, the liquid is cooled and solidified, whereby the wafer is fixed to the table, and a cooling unit for cooling the wafer to a predetermined temperature and keeping it warm is provided, and the heating unit includes a heating body and the heating body. It is provided with a heating means for heating to a predetermined temperature and a drive mechanism for causing a thermal shock to the portion by pressing the heating body against the dicing line of the wafer cooled and kept warm by the cooling means. Is a manufacturing apparatus of a semiconductor device.

[0022]

According to this structure, a thermal shock is generated along the dicing line of the wafer, and the wafer can be diced by the thermal shock stress.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. The same components as those described in the section of the conventional example are designated by the same reference numerals, and the description thereof will be omitted.

First, the first embodiment will be described. FIG. 1 is a diagram showing a schematic configuration of the dicing apparatus of the first embodiment. In the figure, 10 is a base. A wafer holding table 11 is provided on the base 10. The wafer holding table 11 has a flat upper surface and serves as a holding surface for holding the wafer 3. A heating heater 12 for heating the wafer 3 held on the holding surface is provided in the wafer holding table 11. Further, the wafer holding table 11 is provided with a θ drive mechanism section 11a that can position the wafer 3 held on the holding surface in the circumferential direction.

On the other hand, a three dicing mechanism 14 is provided on the side of the wafer holding table 11. The dicing mechanism 14 has an X drive mechanism 15 provided on the base 10, a bracket 16 driven in the X direction by the X drive mechanism 15, and an axis line horizontally provided at an upper end of the bracket 16. The Y drive mechanism 17 and a dicing head 18 movably provided in the Y direction by the Y drive mechanism 17.

The dicing head 18 is provided with a nozzle 19 for blowing a cooling medium such as liquid nitrogen along the dicing line 3a (see the drawing) of the wafer 3. The nozzle 19 has its tip positioned near the upper part of the wafer holding table 11, and has a top end connected to a cooling medium supply pipe 20 for supplying a cooling medium to the nozzle 19. The cooling pipe 20 is connected to a cooling supply source 22 via a regulator 21.

Therefore, the dicing mechanism 14 is
The nozzle 19 can be driven in the XY directions along a dicing line 3a provided on the wafer 3 to spray a cooling medium on the wafer 3.

Next, the operation of dicing the wafer 3 using this apparatus will be described. Wafer 3
7 has a disc shape as shown in FIG. 7, and a plurality of elements (not shown) are formed on the surface thereof. In addition,
On the wafer 3 used in the dicing method of the present invention, at the stage of the etching process for forming the above element,
Notch grooves 24 as shown in FIG. 2 are formed in the XY directions along the dicing lines. In addition, this notch groove 2
4 has a width of 1 μm and a depth of 5 to 7 μm.

Such a wafer 3 is held on the wafer holding table 11. Then, the wafer holding table 11 is fixed on the wafer holding table 11 by suction means (not shown) provided on the wafer holding table 11.

When the wafer 3 is held, the heater 25 provided in the wafer holding table 11 is operated. As a result, the wafer 3 is heated to about 200 ° C. and kept at this temperature. When the temperature distribution in the wafer 3 becomes uniform, the dicing mechanism 14 is operated to divide the wafer 3 along the dicing line 3a.

That is, the dicing mechanism causes the nozzle 19 to face the dicing line 3a (cutout groove 24). This nozzle 19 is the dicing line 3a
When facing the (notch groove 24), the cooling medium supply source 22 and the regulator 21 are operated to operate the nozzle 1
9 to about -50 to -100 [deg.] C. as the cooling medium.
Spray on the surface of.

As a result, the surface of the wafer 3 near the dicing line 3a is locally and rapidly cooled,
A temperature difference (about 300 ° C.) occurs with the temperature inside the wafer 3. This causes a thermal shock to the wafer 3. The thermal shock stress generated by the thermal shock is concentrated (stress concentrated) on the dicing line 3a due to the provision of the notch groove 24, and the wafer 3 is divided along the dicing line 3a.

Next, the dicing mechanism 14 connects the nozzle 19 to the dicing line 3a (cutout groove 24).
The wafer 3 can be divided into each element by moving the wafer 3 in the X and Y directions.

Next, the second embodiment will be described. In the second embodiment, the dicing head 26 is used as the dicing head.

The dicing head 26 is provided on the upper end of the bracket 16 described in the first embodiment (FIG. 1) instead of the Y drive mechanism 14. The dicing head 26 has a head body 27 extending in the Y direction. A circulation hole 28, through which the cooling medium circulates, is provided inside the head body 27 along the longitudinal direction of the head body 27. The flow hole 28 is provided with a slit-shaped blow-out hole 29 (nozzle) having a width of about 50 μm which communicates with the lower surface of the head body 27. Therefore, the cooling medium flowing in the circulation hole 28 is blown out straight from the blowout hole 29 below the head body 27 with a width of about 50 μm.

A heat insulating material 30 for insulating the periphery of the flow hole 28 is provided in the head body 27, and dew condensation in the blow hole 29 is prevented on both sides of the blow hole 29. Heating heaters 31, 31 are provided for this purpose.

On the other hand, at the other end of the head body 27, a supply pipe portion 32 which is in communication with the flow hole 28 and supports the head body 27 is joined. This supply pipe section 3
2 is fixed to the bracket 16 described in the first embodiment, and is connected to a cooling medium supply unit (not shown) via a regulator as in the first embodiment.

Next, the operation of dicing the wafer 3 using this apparatus will be described. This device
The dicing head 26 is driven to drive the head body 2
First, the slit-shaped blow-out hole 29 provided in
The wafer 3 is opposed to the dicing line 3a (cutout groove 24) provided along the Y direction. Then, the cooling medium is sprayed in a straight line over the entire length of the dicing line 3a. As a result, similarly to the first embodiment, the wafer 3 is divided by the thermal shock stress along the dicing line 3a (cutout groove 24).

The dicing apparatus drives the dicing head 26 in the X direction and intermittently stops it on each dicing line 3a, thereby sequentially dividing the wafer 3 along the dicing line 3a.

Then, the θ drive mechanism provided on the wafer holding table 11 is operated to rotate the wafer 3 by about 90 ° in the circumferential direction. Then, by the same operation as the dicing line 3a provided in the Y direction, the wafer 3 is divided along the dicing line 3a provided in the X direction. As a result, the wafer 3 is divided into individual elements.

Next, a third embodiment will be described. The dicing apparatus of the third embodiment has a dicing head 35 as shown in the figure. The dicing head 35 is mounted on the upper surface of the X drive mechanism 15 of the first embodiment (FIG. 1) instead of the bracket 16 and the Y drive mechanism 17.

The dicing head 35 has a vertical drive mechanism 36 attached to the X drive mechanism 15 and a head body 37 vertically driven by the vertical drive mechanism 36.
Consists of. The head main body 37 extends substantially horizontally from the vertical drive mechanism 36 in the Y direction.

The head main body 37 has a heat insulating material 38 constituting the outer surface of the head main body 37, a cooling member 39 covered with the heat insulating material 38, and an inside of the cooling member 39 along the Y direction. Provided in the cooling hole 4 through which the refrigerant flows
It consists of 0 and. Two cooling holes 40 are provided in parallel,
The refrigerant flowing in one cooling hole 40 and supplied into the cooling member 39 flows in the other cooling hole 40 and is discharged from the inside of the cooling member 39.

The lower portion 39a of the cooling member 39 is
It is provided so as to penetrate the heat insulating material 38 and extend downward from the lower surface of the head body 37. This cooling member 39
The lower portion 39a is formed so that the width in the X direction gradually becomes smaller downward. And this cooling member 3
The lower end of 9 is formed in a straight line along the Y direction, which is longer than the dicing line 3a of the wafer 3 and has a width of about 10 μm.

Next, the operation of dicing the wafer 3 using this apparatus will be described. This apparatus drives the dicing head 35 so that the lower portion 39a of the cooling member 39 faces the dicing line 3a provided along the Y direction of the wafer 3.

The cooling member 39 provided in the dicing head 35 is cooled to about -50 to -100 ° C. by the coolant flowing in the cooling hole 40 and kept at that temperature.

Next, the dicing head 35 drives the head body 37 downward to press the lower end of the cooling member 39 over the entire length of the dicing line 3a. As a result, the surface of the wafer 3 is rapidly cooled and a thermal shock is generated, so that the wafer 3 is divided along the dicing line 3a.

Further, the dicing head 35 presses the lower end of the cooling member 39 against the wafer 3 and then further presses the wafer 3 downward with a predetermined pressure to complete the division. When performing dicing with such a dicing head 35, it is not always necessary to provide the cutout groove 24 along the dicing line 3 a of the wafer 3.

Next explained is the fourth embodiment of the invention. The fourth embodiment has a structure as shown in FIG. Reference numeral 43 in the figure is a base. A wafer holding table 44 is provided on the base 43. A concave portion 45 having a diameter larger than the outer diameter of the wafer is provided on the upper surface of the wafer holding table 44. This recess 4
A small amount of a cooling liquid such as water is stored in the inside of 5. Further, this wafer holding table 44 is
The θ drive mechanism 44a is provided, and the recess 45 is circumferentially positioned by the θ drive 44a.

Further, below the recess 45 of the wafer holding table 44, a cooling element for cooling the wafer holding table 44 and for cooling and condensing the cooling liquid stored in the recess 45. 47 are provided.

On the other hand, a dicing mechanism 49 is provided on the side of the wafer holding table 44. The dicing mechanism 49 is provided with an X drive means 50 provided on the base, a vertical drive mechanism 51 driven in the X direction by the X drive means 50, and a vertical drive mechanism driven by the vertical drive mechanism 51. It comprises a dicing head 52.

Since this dicing head 52 is as shown in FIG. 6 and has substantially the same structure as the dicing head 35 shown in the third embodiment, the same components are designated by the same reference numerals. The description is omitted. The cooling member 39 of the third embodiment is heated in this embodiment, and is therefore the heating member 53.

A heater 54 is provided inside the heating member 53. The heater 54 heats the heating member 53 to about 200.degree.

Next, the process of dicing the wafer 3 using this apparatus will be described. First, the wafer 3 is held in the concave portion 45 of the wafer holding table 44,
Between the lower surface of the wafer 3 and the bottom wall of the recessed portion, for example, a small amount of water as a cooling liquid is interposed. The water is the cooling element 47 provided in the wafer holding table 44.
Is cooled and condensed (freezing) by the operation of, and the wafer 3 is fixed to the wafer holding table 44.
Further, the water (ice) is further cooled to about −65 ° C. to keep the wafer 3 at that temperature.

This wafer 3 is the wafer holding table 4 described above.
When the wafer 3 is fixed on the wafer 4 and cooled to a predetermined temperature, the dicing mechanism 49 operates to dice the wafer 3.

The heater 54 provided in the heating member 53 heats the heating member 53 to about 200 ° C. or higher and keeps it warm. This device is the same as the dicing head 52 described above.
Is moved above the wafer 3 to move the heating member 53.
The lower portion 53a of the above is opposed to the dicing line 3a provided along the Y direction of the wafer 3.

Then, the vertical drive mechanism 51 operates,
The lower end of the heating member 53 is pressed against the surface of the wafer 3. This causes a rapid temperature difference between the surface and the inside of the wafer 3 to cause thermal shock. Due to this thermal shock stress, the wafer 3 is divided along the dicing line 3a.

Further, this apparatus completes the division of the wafer 3 by further driving the dicing head 52 downward from that state and pressing the wafer 3. This dicing device divides the wafer 3 along all the dicing lines 3a along the Y direction by the same operation as that of the third embodiment. Then, the θ drive mechanism portion 44a is operated to rotate the wafer 90 ° in the circumferential direction, and the wafer 3 is divided along all the dicing lines 3a along the X direction. As a result, this wafer 3
Is divided into individual elements.

Next, a fifth embodiment will be described. The dicing method of the fifth embodiment is a method used as an aid for dicing by the dicing apparatus of the fourth embodiment. Therefore, the description of the same configuration as the configuration described in the fourth embodiment will be omitted.

In this dicing method, as the wafer 3 to be diced, one having a notch groove 24 along the dicing line 3a as shown in FIG. 2 is used. Then, such a wafer 3 is placed on the wafer holding table 4 described above.
It is held in the concave portion 45 of No. 4.

Then, as in the third embodiment, water is introduced between the lower surface of the wafer 3 and the bottom wall of the recess 45, and water is also supplied into the cutout groove 24.
Then, the cooling element 47 is operated to cool and condense the water supplied to the lower surface of the wafer 3 and the cutout groove 24.

As a result, the wafer 3 is fixed to the wafer holding table 44 and is kept at a predetermined temperature (-65).
℃). On the other hand, the water supplied into the cutout groove 24 freezes in a short time. At this time, the ice expands in the notch groove 24, so that a stress that spreads the notch groove 24 is generated, and this stress concentrates on the V-shaped fan portion of the notch groove 24. .

Then, by the same operation as in the fourth embodiment, the thermal shock is applied to the cutout groove 24, so that the stress generated by the expansion of the ice assists the thermal shock stress. The division can be performed more easily.

According to the above first to fifth embodiments,
There are effects described below. In the above-mentioned diamond blade dicing method, the cutting speed is limited to about 75 mm per second for performing dicing with the blade, whereas the dicing apparatus of the present invention can perform division due to thermal shock, so that high speed is achieved. As a result, it is possible to realize a processing speed of about 5 times or more.

Further, according to the present invention, since the lubrication with pure water is not required, the lubrication device is unnecessary, and the cost and the size of the device can be reduced accordingly.
Further, in the present invention, non-contact dicing is performed with a cooling medium as in the first and second embodiments, or heating member 53 or cooling member 39 as in the third, fourth and fifth embodiments. This is different from the conventional method in which dicing is performed by contacting with each other, and a tool such as a cutter accompanied by wear or damage is used as a tool.

Therefore, there is no problem that the dicing becomes unstable due to wear of the tool. Moreover, since the chips of the wafer 3 do not scatter, the chips are not
It does not adhere to the surface of and contaminate it.

On the other hand, in the present invention, the wafer 3 is heated in order to generate a thermal shock on the wafer 3. However, since the heat retention temperature at this time is relatively low at 200 ° C., the laser explained in the section of the prior art example. Since the surface of the wafer 3 is not melted unlike the dicing by the scribing method, a defect such as adhesion of the melted wafer material to the surface of the wafer 3 is less likely to occur.

The present invention is not limited to the above-mentioned embodiment, but can be variously modified without changing the gist of the invention. For example, in the first to third embodiments described above,
Although the heater 12 is used to heat the wafer 3, the present invention is not limited to this, and a means such as a laser may be used.

In this case, the energy of the laser is smaller than the energy of the laser used in the laser scribing method, and is such that the wafer can be heated to about 200 ° C. and kept warm.

[0070]

According to such a structure, there is an effect that the dicing of the wafer can be stably and favorably performed at a higher speed.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram showing a first embodiment of the present invention.

FIG. 2 is an enlarged perspective view of the same.

FIG. 3 is a perspective view showing a main part of the second embodiment.

FIG. 4 is a perspective view showing a main part of a third embodiment.

FIG. 5 is a schematic configuration diagram showing a fourth embodiment.

FIG. 6 is a perspective view showing a main part of the same.

FIG. 7 is a perspective view showing a conventional example.

[Explanation of symbols]

3 ... Wafer, 3a ... Dicing line, 11 ... Wafer holding table, 12 ... Heater (heating unit), 15 ... X drive mechanism, 17 ... Y drive mechanism, 19 ... Nozzle, 24 ... Notch groove, 29 ... Blowout hole ( Nozzle), 36 ... Vertical drive mechanism, 3
9 ... Cooling member (cooling body), 51 ... Vertical drive mechanism, 53 ...
Heating member (heating body), 44 ... Wafer holding table, 47
... Cooling element (cooling unit), 51 ... Vertical drive mechanism, 53 ... Heating member (heating body).

Claims (10)

[Claims] 1. A semiconductor device manufacturing apparatus for dividing a wafer along a predetermined dicing line, comprising a heating means for heating the wafer and a cooling means for cooling the wafer. Manufacturing equipment. 2. A method of manufacturing a semiconductor device in which a wafer is divided along a predetermined dicing line, the first step of heating the wafer to a predetermined temperature to keep it warm, and the surface of the wafer heated and kept warm locally. And a second step of dividing the wafer by thermal shock by cooling the wafer into a semiconductor device. 3. A method of manufacturing a semiconductor device in which a wafer is divided along a predetermined dicing line, a first step of cooling the wafer to a predetermined temperature and keeping it warm, and locally heating the surface of the wafer. A second step of dividing the wafer by thermal shock by heating, the method for manufacturing a semiconductor device. 4. The method of manufacturing a semiconductor device according to claim 2, wherein a notch groove is provided along a dicing line of the wafer before heating or cooling the wafer. 5. Before heating or cooling the wafer, a cutout groove is provided along the dicing line of the wafer, and a liquid is supplied into the cutout groove to cool and solidify the liquid. 4. The method of manufacturing a semiconductor device according to claim 3, wherein stress is generated in the notch groove by the expansion of the liquid. 6. The method of manufacturing a semiconductor device according to claim 4, wherein the notch groove is formed by etching. 7. The heating means comprises a wafer holding table for holding the wafer, and a heating section for heating the wafer held on the wafer holding table to a predetermined temperature to keep the wafer warm. Is a nozzle for spraying a cooling medium cooled to a predetermined temperature on the wafer heated and kept warm by the heating means to cause a thermal shock to the portion, and a drive mechanism for driving the nozzle along the dicing line of the wafer. The semiconductor device manufacturing apparatus according to claim 1, further comprising: 8. The apparatus for manufacturing a semiconductor device according to claim 7, wherein the nozzle has a slit-shaped blowout hole for blowing a cooling medium over a predetermined length on the dicing line of the wafer. 9. The cooling means includes a cooling body, a cooling means for cooling the cooling body to a predetermined temperature, and the cooling body pressed against a wafer which is heated to a predetermined temperature by the heating means and kept warm. 2. The apparatus for manufacturing a semiconductor device according to claim 1, further comprising a drive mechanism that causes a thermal shock to a portion. 10. The wafer holding table for holding the wafer by interposing a predetermined liquid between the wafer and the cooling means, and cooling the wafer holding table,
The liquid is cooled and solidified, whereby the wafer is fixed to the table, and a cooling unit for cooling and maintaining the wafer at a predetermined temperature is provided, and the heating means includes a heating body and the heating body at a predetermined temperature. And a driving mechanism for pressing the heating body against a dicing line of the wafer cooled and kept warm by the cooling means to generate a thermal shock at that portion. The semiconductor device manufacturing apparatus according to claim 1.