JP2006150642A - Cell and cell manufacturing method - Google Patents

Cell and cell manufacturing method Download PDF

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JP2006150642A
JP2006150642A JP2004341456A JP2004341456A JP2006150642A JP 2006150642 A JP2006150642 A JP 2006150642A JP 2004341456 A JP2004341456 A JP 2004341456A JP 2004341456 A JP2004341456 A JP 2004341456A JP 2006150642 A JP2006150642 A JP 2006150642A
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cleaving
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mother substrate
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cell
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Masahiko Uchiyama
昌彦 内山
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Rorze Corp
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Rorze Corp
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<P>PROBLEM TO BE SOLVED: To solve the problem wherein the waste piece part between a plurality of cells is wasteful because a plurality of the cells are arranged so as to leave a predetermined distance from the end parts of the cells adjacent to each other to be provided on a mother substrate, many cells can not be arranged on the other substrate, production efficiency is bad and, in a dividing and cutting method using a cemented carbide wheel, there are many troubles such as the occurrence of microchips (minute chips or cracks) or the like after division and cutting. <P>SOLUTION: By providing the seal member of the cells adjacent to each other to the mother substrate in common, more cells can be taken from the mother substrate of the same size than before. Further, since the region just above the seal member provided in common is divided and cut by a laser dividing and cutting means, a dividing cutting number can be reduced and the time required in a dividing and cutting process can be shortened. Further, a plastic deformation region is not produced in a divided and cut part or microchips (minute chips or minute cracks) are not produced in this divided and cut part and a product yield is enhanced. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、母基板をレーザ割断手段により割断して製造するセル及びその方法に関するものであり、特に液晶パネル、PDP、有機EL、又はFED等の基板をより多く隣接させたセルを最適に割断して製造するセル及びその方法に関するものである。   The present invention relates to a cell for manufacturing a substrate by cleaving a mother substrate with a laser cleaving means and a method therefor, and more particularly, to optimally cleave a cell in which more substrates such as a liquid crystal panel, PDP, organic EL, or FED are adjacent. And a method of manufacturing the cell.

液晶パネルの製造では、二枚の大型母基板をシール部材で貼り合わせて、これを小型のセルに切り分けて製造する。この小型のセルに割断する方法として、特許文献1に記載のスクライブ・ブレイク法があげられる。 In the production of a liquid crystal panel, two large mother substrates are bonded together with a sealing member, and the large substrates are cut into small cells for production. As a method of cleaving into this small cell, there is a scribe break method described in Patent Document 1.

図8は特許文献1の図5に示す母基板であり、この母基板上には、複数のセルがその外周をシール部材で区切られて、かつ、隣のセルと一定の間隔を隔てて複数備える。この母基板を割断する方法は、母基板のシール部材の真上を超硬ホイールにより母基板の表面と裏面から同じ箇所となるようにスクライブ溝を生成した後に、ブレイク手段によりスクライブ溝付近に衝撃力を加えることでクラック(亀裂)を進展させる一連の工程により、割断予定線毎に、この割断線上に沿って母基板を割断する方法である。 FIG. 8 shows a mother board shown in FIG. 5 of Patent Document 1. On this mother board, a plurality of cells are separated by a sealing member on the outer periphery, and a plurality of cells are spaced apart from adjacent cells by a certain distance. Prepare. This method of cleaving the mother board is to create a scribe groove so that the same position is formed from the front surface and the back surface of the mother board with a carbide wheel directly above the sealing member of the mother board, and then the impact is applied to the vicinity of the scribe groove by a break means. In this method, the mother substrate is cleaved along the cutting line for each planned cutting line by a series of processes for developing cracks by applying force.

二枚のガラス基板を貼り合わせる工程では、ガラス基板に熱硬化する樹脂をシール部材として例えば0.4〜0.5mmの幅となるように塗って、二枚のガラス基板の位置を合わせて重ねて置いて、圧力をかけて焼成することで貼り合わせることができる。このときのシールの幅は、1.5mm程度まで拡大される。この文献の割断方法では、セルの最外周から0.8mmの箇所、つまりシール部材のほぼ中心線に沿って割断するため、このセルのシール部材は0.7mm程度となる。さらに、このような超硬ホイールによる機械的な割断方法では、割断部分が、もろくて壊れやすい塑性変形領域(高密度化領域)となるため、割断部分を研磨する必要があり、シール部分は研磨により削られて無くなる部分(研磨しろ)例えば0.04mm程度、余分に設けておく必要がある。 In the process of bonding the two glass substrates, a thermosetting resin is applied to the glass substrate as a sealing member so as to have a width of, for example, 0.4 to 0.5 mm, and the two glass substrates are aligned and overlapped. And can be bonded together by baking under pressure. The width of the seal at this time is expanded to about 1.5 mm. In the cleaving method of this document, since the cleaving is performed along a position 0.8 mm from the outermost periphery of the cell, that is, substantially along the center line of the sealing member, the sealing member of the cell is about 0.7 mm. Furthermore, in such a mechanical cleaving method using a carbide wheel, the cleaved portion becomes a fragile and fragile plastic deformation region (high density region). Therefore, the cleaved portion needs to be polished, and the seal portion is polished. It is necessary to provide an extra portion (polishing margin) of about 0.04 mm, for example, which is removed by the cutting.

図9は特許文献2の図1に示すレーザ割断手段による割断方法の説明図である。この方法では、放射ビーム(レーザ光)の照射によって脆性非金属本体1(母基板)をその軟化点より低い温度に加熱して、意図する亀裂線(割断予定線)上の加熱されたターゲット領域2(レーザ照射スポット)から移動方向に対して後方側に一定距離だけ離れた位置にある加熱表面領域3へ流体冷媒(水冷手段)の流れを指向させることにより脆性非金属本体1を割断するものである。 FIG. 9 is an explanatory diagram of the cleaving method by the laser cleaving means shown in FIG. In this method, the brittle nonmetallic main body 1 (mother substrate) is heated to a temperature lower than its softening point by irradiation with a radiation beam (laser light), and the heated target region on the intended crack line (scheduled cutting line). Cleaving the brittle non-metallic body 1 by directing the flow of the fluid refrigerant (water cooling means) to the heating surface region 3 located at a certain distance away from 2 (laser irradiation spot) in the rearward direction with respect to the moving direction It is.

従来のセルの製造方法について、図8を参照に説明する。従来のセルの製造方法は、上述したレーザ割断手段や超硬ホイールにより母基板上に複数備える割断予定線上でブレイク溝を生成して、ブレイク手段により割断する一連の工程を割断予定線の一本毎に(スクライブ・ブレイク法と称する)割断するセルの製造方法である。
特開2003−255362号公報 特許第3027768号
A conventional cell manufacturing method will be described with reference to FIG. In the conventional cell manufacturing method, a series of processes in which a break groove is generated on a plurality of planned cutting lines provided on a mother substrate by the laser cutting means and the carbide wheel described above and is cut by the breaking means This is a method of manufacturing a cell that is cleaved every time (referred to as a scribe break method).
JP 2003-255362 A Japanese Patent No. 3027768

特許文献1に記載の母基板には、複数のセルが隣り合うセルの端部から所定の距離を隔てて並べられて備えるため、セルとセルの間の端切れ部分が無駄であるとともに、母基板上にセルを多く配置できず、生産効率が悪かった。   In the mother board described in Patent Document 1, since a plurality of cells are arranged with a predetermined distance from the end of adjacent cells, the cut off part between the cells is useless, and the mother board Many cells could not be placed on the top, resulting in poor production efficiency.

従来の超硬ホイールによりシール部材の真上を割断する割断方法では、割断部分に生じる塑性変形領域の残留応力により、割断部分にマイクロチップ(微少な欠けや微少な割れ)が生じる。これによりシール部材が剥離してシール部分に穴ができて、後の液晶注入工程で液晶が漏れるという不具合を起こす可能性があり、シール部分を細くすることができない。その結果、表示サイズに対してセルの大きさが大きくなるという不具合がある。 In the conventional cleaving method in which the carbide member is cleaved right above the sealing member, microchips (small chips or minute cracks) are generated in the cleaved portion due to the residual stress in the plastic deformation region generated in the cleaved portion. As a result, the sealing member peels off and a hole is formed in the sealing portion, and there is a possibility that the liquid crystal leaks in the subsequent liquid crystal injection step, and the sealing portion cannot be made thin. As a result, there is a problem that the cell size becomes larger than the display size.

また、シール部材の硬化に際して生じる部分的な引張応力に起因する残留ひずみがガラス基板内部に生じている。このようなガラス基板を上述の超硬ホイールにより割断する際に、ガラス基板内部の残留ひずみが左右対称ではないため、割断の軌跡が湾曲するなどの割断予定線上を割断できない不具合が生じやすい。 Further, residual strain caused by partial tensile stress generated when the seal member is cured is generated inside the glass substrate. When such a glass substrate is cleaved by the above-mentioned carbide wheel, the residual strain inside the glass substrate is not symmetrical, so that a problem that the cleaved trajectory cannot be cleaved such as a cleaved locus is likely to occur.

また、この超硬ホイールによる割断方法では、割断面に塑性変形領域が生じることにより、割断して製造されたセルの強度にばらつきが少ないものの、その強度の平均的な値は低く、セル縁部から破損が起こりやすくなっている。これを防止するために、割断後に割断部分を研磨する必要があり、この工程に非常に長い時間を要するとともに、削り屑がパーティクルとして発生するので周辺のクリーン度を低下させるほか、シール部材の幅を研磨する部分を考慮して設ける必要があるなど多くの不具合がある。 In addition, in this cleaving method using a carbide wheel, a plastic deformation region is generated in the cleaved surface, so that there is little variation in the strength of the cell produced by cleaving, but the average value of the strength is low, and the cell edge Damage is likely to occur. In order to prevent this, it is necessary to grind the cleaved part after cleaving, and this process takes a very long time, and shavings are generated as particles. There are many inconveniences such as the need to provide a part to be polished.

従来のセルの製造方法では、母基板の表裏両面について割断線毎にスクライブ・ブレイク法によって母基板を割断方法してセルを製造するため、母基板表面の割断の後に、母基板裏面の一定方向(以下、第一方向と称する。)についてスクライブ・ブレイク法による割断を行うことで複数のセルが備えられる短冊状の母基板を製造した後、さらにスクライブ・ブレイク法により個々のセルに割断する際に、図10に示すようにセルの割断端部にチッピングと称する割断線が湾曲する不具合が生じる。このチッピングによりセル上の端子部の配線が切断されることで製品不良を起こす不具合や、最終製品とするためのケースに収納できない不具合を発生させる原因となる。 In the conventional cell manufacturing method, the cell is manufactured by cleaving and breaking the mother substrate by the scribe / break method for each breaking line on both the front and back surfaces of the mother substrate. (Hereinafter referred to as the first direction), when a strip-shaped mother substrate provided with a plurality of cells is manufactured by cleaving by the scribe / break method, and further cleaving into individual cells by the scribe / break method In addition, as shown in FIG. 10, there is a problem that the breaking line called chipping is curved at the breaking end portion of the cell. This chipping causes a problem that a product failure is caused by cutting the wiring of the terminal portion on the cell, and a problem that cannot be stored in a case for making a final product.

本発明のセルは、二つの基板を、シール部材を介して一定距離を隔てて貼り合わせてあり、かつ、隣接したセルがシール部材を共有する母基板から、前記シール部材の上部をレーザ手段により割断する少なくとも1つの端部を有するものである。このシール部材は、熱硬化する樹脂であっても、UV光を照射することで硬化するUV樹脂等の公知のシール部材であっても良い。また、シール部材は基板上に非常に薄く塗られるものであるため、レーザ割断手段によりシール部材の上部、つまりシール部材により真上(真下)に貼り合わされる二枚のガラス基板を同じ割断線上を割断すると同時に、シール部材も割断される。   In the cell of the present invention, two substrates are bonded to each other at a predetermined distance via a seal member, and an upper portion of the seal member is formed by laser means from a mother substrate in which adjacent cells share the seal member. It has at least one end to be cleaved. This sealing member may be a thermosetting resin or a known sealing member such as a UV resin that cures when irradiated with UV light. Further, since the sealing member is applied very thinly on the substrate, two glass substrates bonded to the upper part of the sealing member by the laser cutting means, that is, directly above (below) by the sealing member, are placed on the same cutting line. Simultaneously with the cleaving, the sealing member is also cleaved.

本発明で用いられる前記レーザ割断手段は、スクライブ手段と、ブレイク手段と、スクライブ手段とブレイク手段とを母基板に対して相対的に移動する移動手段と、からなるものである。また、前記スクライブ手段が、イニシャルクラック手段と、レーザ照射手段と、水冷手段と、からなるものである。イニシャルクラック手段は、レーザ光を照射することにより、または、ダイヤモンドホイール等の機械的な方法により、ガラス基板上であって割断予定線上の割断開始点にクラック(亀裂)を発生させるものであり、レーザはNd:YAGの4倍の高調波等がある。レーザ照射手段によるレーザの種類は、炭酸ガスレーザ(波長10.6μm)、エキシマレーザ(ArF、KrF)(波長193〜249μm)、波長が400nm以下のUVレーザ、Nd:YAGの2倍高調波やYVO4レーザ等のGreenYAGレーザ(波長532nm)を照射する手段である。水冷手段は、ノズル、管材等により水と圧縮空気又は窒素等を単独で又は混合して、液状または霧状にガラス基板の加熱箇所に注水又は噴霧するものである。ブレイク手段は、レーザ照射手段と同様の炭酸ガスレーザ等の照射手段、または、割断部分に圧力を加える手段であっても良い。 The laser cleaving means used in the present invention comprises scribe means, break means, and moving means for moving the scribe means and break means relative to the mother substrate. The scribing means includes an initial crack means, a laser irradiation means, and a water cooling means. The initial crack means is to generate a crack (crack) at a cleaving start point on a cleaving line on a glass substrate by irradiating a laser beam or by a mechanical method such as a diamond wheel, The laser has 4 times higher harmonics than Nd: YAG. The types of laser by the laser irradiation means are carbon dioxide laser (wavelength 10.6 μm), excimer laser (ArF, KrF) (wavelength 193 to 249 μm), UV laser having a wavelength of 400 nm or less, Nd: YAG double harmonic, YVO4 This is means for irradiating a GreenYAG laser (wavelength 532 nm) such as a laser. The water-cooling means is a method in which water and compressed air, nitrogen, or the like is singly or mixed with a nozzle, a tube, or the like, and injected or sprayed onto a heated portion of the glass substrate in a liquid or mist form. The break means may be an irradiation means such as a carbon dioxide laser similar to the laser irradiation means, or a means for applying pressure to the cleaved portion.

なお、レーザ割断手段を母基板に対して相対的に移動するための移動手段は、ボールネジをモータにより回動することで、及びリニアモータ等により直線運動するスライド部と、直線運動可能にスライド部を支持する直動ガイドからなるものである。この移動手段を複数備えることにより水平面内で自在に移動可能となる。この発明では、移動手段により母基板、若しくは、レーザ割断手段を移動させるため、並びに母基板及びレーザ割断手段を移動させるために用いてもよい。 The moving means for moving the laser cleaving means relative to the mother board includes a slide part that moves linearly by a linear motor or the like by rotating a ball screw by a motor, and a slide part that can linearly move. It consists of a linear motion guide that supports By providing a plurality of such moving means, it is possible to move freely within the horizontal plane. In the present invention, it may be used for moving the mother substrate or the laser cleaving means by the moving means and for moving the mother substrate and the laser cleaving means.

本発明で用いるレーザ割断手段により、ある(1本の)割断予定線上を割断する手順について以下に説明する。まず、前記イニシャルクラック手段により母基板の割断予定線上の割断開始点(ここで、割段階始点とは、割断を開始する母基板端部から微少距離間を示す。)にクラックを生成して、次に、前記レーザ照射手段により母基板の割断予定線上を加熱すると共に相対的に移動して、次に、水冷手段により加熱した箇所を冷却すると共に相対的に移動する一連のスクライブを生成する工程を母基板の割断予定線について行った後に、前記ブレイク手段により母基板を割断することでセルを製造することができる。なお、本発明で用いるレーザ割断手段は、母基板のシール部材の真上及びシール部材のない箇所等のいずれの箇所をも割断できるものである。 A procedure for cleaving a certain (one) scheduled cutting line by the laser cleaving means used in the present invention will be described below. First, the initial crack means generates a crack at the cleaving start point on the planned cutting line of the mother substrate (here, the cleaving stage start point indicates a minute distance from the end of the mother substrate where cleaving is started), Next, a process of generating a series of scribing that heats and relatively moves on the cleavage line of the mother substrate by the laser irradiation means, and then cools and relatively moves the portion heated by the water cooling means. Then, the cell can be manufactured by cleaving the mother substrate by the break means after performing the cutting on the mother substrate. The laser cleaving means used in the present invention can cleave any part such as a part directly above the sealing member of the mother board and a part without the sealing member.

上述のレーザ割断手段により母基板を割断してセルを製造する方法を以下に説明する。このセルの製造方法は、二つの基板が一定距離を隔ててシール部材により貼り合わされてなる母基板平面内の第一方向の各割断予定線毎にイニシャルクラック生成工程と、スクライブ工程とを連続して行った後、母基板平面内の第二方向の各割断予定線毎にイニシャルクラック生成工程と、スクライブ工程と、ブレイク工程とを連続して行って母基板を割断した後、既にスクライブ溝が形成されている第一方向の割断予定線にブレイク工程を行うことにより母基板を割断するセルの製造方法である。なお、第一方向と第二方向とは、例えば直交する異なる二方向を示すものである。 A method for producing a cell by cleaving the mother substrate with the above laser cleaving means will be described below. In this cell manufacturing method, an initial crack generation process and a scribing process are continuously performed for each planned cutting line in the first direction in a mother substrate plane in which two substrates are bonded to each other by a seal member at a predetermined distance. After performing the initial crack generation process, the scribe process, and the break process continuously for each planned cutting line in the second direction in the mother board plane, the scribe groove is already formed. It is a manufacturing method of the cell which cleaves a mother board by performing a breaking process to a cleaved planned line of the 1st direction formed. In addition, a 1st direction and a 2nd direction show two different directions orthogonal, for example.

前述では、二つの基板が一定距離を隔ててシール部材により貼り合わされてなる母基板の表面又は裏面の何れか1面についてレーザ割断手段により割断してセルを製造する方法について説明した。これに対して、母基板の一方の面について従来通りの割断した後に、母基板を裏返して、他表面について本発明の割断するセルの製造方法を以下に説明する。 In the foregoing, a method has been described in which a cell is manufactured by cleaving either one of the front surface or the back surface of a mother substrate in which two substrates are bonded to each other by a seal member at a certain distance by laser cleaving means. On the other hand, the manufacturing method of the cell which cuts the mother board after turning one side of the mother board as usual and then cleaves the other surface according to the present invention will be described below.

本発明のセルの製造方法は、まず、従来のセルの製造方法と同様に、二つの基板が一定距離を隔ててシール部材により貼り合わされてなる母基板を前記レーザ割断手段により、母基板表面上に設定した割断予定線上を母基板表面内の第一方向と、第一方向と直交する第二方向とのそれぞれに平行して複数備える各割断予定線について、この割断線毎にイニシャルクラック生成工程と、スクライブ工程と、ブレイク工程とを連続して行うことにより母基板表面の基板を割断する。この後、本発明の母基板を裏返して、母基板裏面内の第一方向の各割断予定線について、この割断線毎にイニシャルクラック生成工程と、スクライブ工程とを連続して行った後、母基板裏面内の第二方向の各割断予定線ついて、この割断線毎にイニシャルクラック生成工程と、スクライブ工程と、ブレイク工程とを連続して行って母基板裏面を割断した後、母基板裏面の第一方向の割断予定線ついて、この割断線毎にブレイク工程を行うことにより母基板を割断するセルの製造方法である。なお、従来の割断方法によるセルの製造方法とは、例えば、超硬ホイールによる機械的に割断する方法やレーザ光を照射した熱の熱衝撃により割断する公知方法である。 In the cell manufacturing method of the present invention, first, as in the conventional cell manufacturing method, a mother substrate in which two substrates are bonded to each other by a sealing member at a predetermined distance is formed on the surface of the mother substrate by the laser cleaving means. The initial crack generation step for each cutting line for each of the cutting lines provided in parallel with the first direction in the mother board surface and the second direction orthogonal to the first direction on the planned cutting line set to Then, the substrate on the surface of the mother substrate is cleaved by continuously performing the scribe process and the break process. Thereafter, the mother substrate of the present invention is turned over, and the initial crack generation process and the scribing process are continuously performed for each breaking line for each of the planned cutting lines in the first direction in the back surface of the mother board. For each planned cutting line in the second direction in the back surface of the substrate, the initial crack generation process, the scribe process, and the breaking process are successively performed for each breaking line, and the back surface of the mother substrate is cut. This is a method for manufacturing a cell in which a mother substrate is cleaved by performing a break process for each cleaving line in the first direction. In addition, the manufacturing method of the cell by the conventional cleaving method is a well-known method of cleaving by the thermal shock of the heat | fever which irradiated the laser beam, for example, the method of mechanically cleaving with a carbide wheel.

本発明では、母基板に隣り合うセルの端部(シール部材)を共有することで、セル間の捨てていた余分な箇所をなくすことができる。これにより、省資源化できるともに以前と同サイズの母基板から、より多くのセルをとることができる。また、隣り合うセルが共有するシール部材の中央を割断するため、割断本数を減少することができ、これにより割断工程にかかる時間を短縮することができる。 In the present invention, by sharing the end portion (seal member) of the cell adjacent to the mother substrate, it is possible to eliminate an extra portion discarded between the cells. As a result, it is possible to save resources and to take more cells from the same size mother board as before. Moreover, since the center of the sealing member shared by the adjacent cells is cleaved, the number of cleaves can be reduced, thereby shortening the time required for the cleaving process.

また、レーザ割断手段により割断するため、割断部分に塑性変形領域が生じたり、マイクロチップ(微少な欠けや微少な割れ)が生じたりせず、製品歩留まりが向上する。また、塑性変形領域やマイクロチップによるシールの剥離(シール部材とガラス基板との接触面に水平クラックが入ってシール部材が剥離する現象)が生じてシール部分に穴ができて、後の液晶注入工程で液晶が漏れるという不具合を起こすことがなくなった。このため、シール部分を細くすることができて、表示サイズはそのままに、セル自体の大きさを小さくすることができる。 Further, since the cleaving is performed by the laser cleaving means, a plastic deformation region or a microchip (a minute chip or a minute crack) is not generated in the cleaved portion, and the product yield is improved. Also, peeling of the seal due to the plastic deformation region or microchip (a phenomenon in which the sealing member peels off due to a horizontal crack on the contact surface between the sealing member and the glass substrate) is created, and a hole is formed in the sealing portion, and liquid crystal is injected later. There is no longer a problem of liquid crystal leaking in the process. For this reason, the seal portion can be made thin, and the size of the cell itself can be reduced without changing the display size.

また、レーザ割断手段による割断は物理的な割断方法、例えば超硬ホイールによるもの比べて、割断時の残留ひずみが左右対称となるため割断の軌跡が湾曲する不具合が少ない。レーザ割断手段による割断部分は塑性変形領域やマイクロチップが生じないため、外部からの圧力による衝撃を与えても破損しない。つまり、セルの強度が増し、次の工程へと搬送途中に割れが生じる可能性が低減した。レーザ割断手段による割断方法ではパーティクルが発生しないため作業環境をクリーンに保つことができる。従来の超硬ホイールによる割断方法で行っていた研磨工程と研磨工程により発生していたゴミを洗浄する工程が省略することができる。 Further, the cleaving by the laser cleaving means is less likely to bend the trajectory of the cleaving because the residual strain at the cleaving is symmetrical as compared with a physical cleaving method, for example, using a carbide wheel. Since the cleaved portion by the laser cleaving means does not generate a plastic deformation region or a microchip, it is not damaged even when an external impact is applied. In other words, the strength of the cell increased, and the possibility of cracking during the transfer to the next process was reduced. In the cleaving method using the laser cleaving means, particles are not generated, so that the working environment can be kept clean. The polishing step performed by the conventional cleaving method using a carbide wheel and the step of cleaning dust generated by the polishing step can be omitted.

本発明のセルの製造方法では、母基板上の全ての割断予定線上にスクライブ溝を生成した後に、ブレイク手段により割断するため、割断線終端付近に発生する割断線の湾曲(チィッピング)を防止することができる。 In the cell manufacturing method according to the present invention, the scribe groove is generated on all the planned cutting lines on the mother substrate and then cut by the break means, so that the cutting line is prevented from being bent (chipping) near the end of the cutting line. be able to.

図1の符号1は母基板であり、この母基板1には複数のセル2を並べて備える。符号3は、セル2に液晶を注入するための注入口であり、4はガラス基板5、6を貼り合わせるためのシール部材であり、7は端子部材である。セル2は、このシール部材4を注入口3部分以外の外周に備える。本実施例のセル2は、略四角形をしており、端子部材7を有する一辺以外の辺にあるシール部材4を隣り合うセル2と共有する。なお、この母基板1のサイズは、下記表1〜3中に縦(L)×横(S)で示すである。 Reference numeral 1 in FIG. 1 denotes a mother board, and the mother board 1 includes a plurality of cells 2 arranged side by side. Reference numeral 3 denotes an injection port for injecting liquid crystal into the cell 2, 4 denotes a seal member for bonding the glass substrates 5 and 6, and 7 denotes a terminal member. The cell 2 includes the seal member 4 on the outer periphery other than the injection port 3 portion. The cell 2 of the present embodiment has a substantially rectangular shape, and shares the sealing member 4 on the side other than the one side having the terminal member 7 with the adjacent cell 2. The size of the mother substrate 1 is indicated by the vertical (L A) × horizontal (S A) in the following Table 1-3.

図2は図1と同サイズの従来の母基板1であり、セル2が配置できる個数を比較するために示すものである。この母基板1には複数のセル2を一定距離(4mm)だけ隔てて備える。このセル2とセル2との間の端材8は割断後に破棄される部分である。 FIG. 2 shows a conventional mother board 1 having the same size as that of FIG. 1, and is shown for comparison of the number of cells 2 that can be arranged. The mother board 1 includes a plurality of cells 2 separated by a certain distance (4 mm). The end material 8 between the cell 2 and the cell 2 is a portion discarded after cleaving.

図3及び4は、本発明及び従来のセル2であり、このセル2のサイズを英字により示す。図中に示す母基板1のサイズは、縦(L)×横(S)であり、セル2のサイズは縦(L)×横(S)であり、端子部材の幅はZ(本実施例では4mmとする。)で示す。シール部材の幅はTであり、これを隣り合うセル2が共有するため、割断後のセル2のシール部材の幅はその半分のT/2となる。なお、図中の符号9は母基板上の割断予定線であり、この割断線上に沿って母基板が割断される。 3 and 4 show the cell 2 of the present invention and the conventional one, and the size of the cell 2 is shown in English. The size of the mother board 1 shown in the figure is vertical (L A ) × horizontal (S A ), the size of the cell 2 is vertical (L B ) × horizontal (S B ), and the width of the terminal member is Z (In this embodiment, it is 4 mm). The width of the sealing member is T, and this is shared by the adjacent cells 2, so that the width of the sealing member of the cell 2 after cleaving is half that of T / 2. Note that reference numeral 9 in the figure denotes a planned cutting line on the mother board, and the mother board is cut along this breaking line.

サイズが異なる母基板1毎に、製造できるセル2の数量を比較して表1〜3に示す。
表中の(L),(S),(L),(S),(T)は、図3中に示すセルの各箇所を表す英数字である。なお、従来及び本発明の「縦枚数」及び「横枚数」は、母機版1上に左記サイズのセル2を並べることができる枚数を示し、「総枚数」は、1枚の母基板1からとれるセル2の数量を示すものである。

Figure 2006150642
Figure 2006150642
Figure 2006150642
Tables 1 to 3 show the numbers of cells 2 that can be manufactured for each mother board 1 having different sizes.
In the table, (L A ), (S A ), (L B ), (S B ), and (T) are alphanumeric characters representing each part of the cell shown in FIG. Note that “vertical number” and “horizontal number” in the prior art and the present invention indicate the number of cells 2 of the size shown on the left on the mother machine plate 1, and the “total number” refers to a single mother substrate 1. This shows the quantity of cells 2 that can be taken.
Figure 2006150642
Figure 2006150642
Figure 2006150642

図5は本発明のセルの割断するためのレーザ割断手段10であり、このレーザ割断手段10により母基板1を割断する手順を以下に説明する。まず、符号11のイニシャルクラック手段により波長が266nmのYAGパルスレーザ光を母基板1の割断予定線12上の割断開始点13に照射(照射スポットを符号14で図中に示す。)して微少箇所なイニシャルクラック15(亀裂)を生成する。次に、スクライブ手段16により波長が10.6μmの炭酸ガスレーザ光を母基板1に向けて照射(照射スポットを符号17で図中に示す。)すると共に、移動手段18によりレーザの照射スポット17が母基板1の割断予定線12上を移動することにより母基板1を加熱した後に、水冷手段19のノズル20先端から注水して加熱箇所を冷却することにより母基板1上にスクライブ溝21を生成する。最後に、ブレイク手段22により波長が10.6μmの炭酸ガスレーザ光を母基板1に照射(照射スポットを符号23で図中に示す。)して、クラック(亀裂)を母基板1の厚さ方向に進展させて割断する。なお、本実施例のレーザ割断手段10には、母基板1に対して相対的に移動する移動手段18を備えて、この移動手段18によりイニシャルクラック手段11とスクライブ手段16と水冷手段19とブレイク手段22が同時に移動することが可能である。   FIG. 5 shows a laser cleaving means 10 for cleaving a cell according to the present invention. The procedure for cleaving the mother substrate 1 by the laser cleaving means 10 will be described below. First, a YAG pulsed laser beam having a wavelength of 266 nm is irradiated to the cleaving start point 13 on the cleaving planned line 12 of the mother substrate 1 by the initial crack means denoted by reference numeral 11 (irradiation spot is indicated by reference numeral 14 in the figure). Local initial cracks 15 (cracks) are generated. Next, the scribing means 16 irradiates the mother substrate 1 with a carbon dioxide laser beam having a wavelength of 10.6 μm (an irradiation spot is indicated by reference numeral 17 in the figure), and the moving means 18 causes the laser irradiation spot 17 to be irradiated. After the mother substrate 1 is heated by moving on the planned cutting line 12 of the mother substrate 1, water is injected from the tip of the nozzle 20 of the water cooling means 19 to cool the heated portion, thereby generating a scribe groove 21 on the mother substrate 1. To do. Finally, carbon dioxide laser light having a wavelength of 10.6 μm is irradiated onto the mother substrate 1 by the break means 22 (irradiation spots are indicated by reference numeral 23 in the figure), and cracks are generated in the thickness direction of the mother substrate 1. To break it up. The laser cleaving means 10 of the present embodiment is provided with a moving means 18 that moves relative to the mother substrate 1, and the moving means 18 causes the initial crack means 11, the scribe means 16, the water cooling means 19, and the break. It is possible for the means 22 to move simultaneously.

図6は、レーザ割断手段により母基板1を割断してセルを製造する手順を示す説明図である。図6(a)は母基板表面の第一方向24と第二方向25に割断予定線12を示す。図6(b)は、図6(a)の母基板表面の第一方向24と第二方向25の各割断予定線ついて、図示しないレーザ割断手段により割断予定線の割断開始点にクラックを生成するイニシャルクラック生成工程と、クラックを進展させるスクライブを行う工程と、スクライブ工程とによりスクライブ溝に沿って割断された軌跡を示す割断線26である。 FIG. 6 is an explanatory diagram showing a procedure for manufacturing a cell by cleaving the mother substrate 1 by laser cleaving means. FIG. 6A shows the planned cutting line 12 in the first direction 24 and the second direction 25 on the surface of the mother board. FIG. 6B shows a crack generated at the cleaving start point of the cleaved line by the laser cleaving means (not shown) for each cleaved line in the first direction 24 and the second direction 25 on the surface of the mother substrate in FIG. 6A. 2 is a breaking line 26 showing a locus cut along the scribe groove by the initial crack generation step, the scribe step for progressing the crack, and the scribe step.

図7は、図6により母基板1の表面の第一方向24及び第二方向25について割断した後に、この母基板1を裏返した状態を示す。図7(a)の母基板1には、第一方向24についてイニシャルクラック生成工程を経て、スクライブ工程により生成されるスクライブ溝21を示し、また、第二方向25について設定した割断予定線12を示す。図7(b)は、母基板上の第二方向25の割断予定線12上について、イニシャルクラック生成工程と、スクライブ工程とを経てブレイク工程により母基板1を割断して短冊状の母基板1を示すものである。符号27は、レーザ割断手段により割断された端部を示す。図7(c)は、図6(b)で示した第一方向のスクライブ溝21に沿ってブレイク工程を行って短冊状の母基板1を割断して製造したセル2を示す。このセルはレーザ割断手段により割断された少なくとも1つの外周端部2を備える。 FIG. 7 shows a state in which the mother substrate 1 is turned upside down after being cleaved in the first direction 24 and the second direction 25 on the surface of the mother substrate 1 according to FIG. 6. The mother board 1 in FIG. 7A shows the scribe groove 21 generated by the scribe process through the initial crack generation process in the first direction 24, and the cutting planned line 12 set in the second direction 25 is shown. Show. FIG. 7B shows a strip-shaped mother board 1 obtained by cleaving the mother board 1 by a breaking process through an initial crack generation process and a scribing process on the planned cutting line 12 in the second direction 25 on the mother board. Is shown. Reference numeral 27 denotes an end portion cleaved by the laser cleaving means. FIG. 7C shows a cell 2 manufactured by cleaving the strip-shaped mother substrate 1 by performing a breaking process along the scribe groove 21 in the first direction shown in FIG. 6B. This cell comprises at least one outer peripheral edge 2 which is cleaved by laser cleaving means.

本発明の母基板を示す斜視図である。It is a perspective view which shows the mother board | substrate of this invention. 従来の母基板を示す斜視図である。It is a perspective view which shows the conventional mother board | substrate. 本発明のセルを示す平面図である。It is a top view which shows the cell of this invention. 従来のセルを示す平面図である。It is a top view which shows the conventional cell. 本発明のレーザ割断手段を示す斜視図である。It is a perspective view which shows the laser cleaving means of this invention. 本発明のセルの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of the cell of this invention. 本発明のセルの製造方法を示す説明図である。It is explanatory drawing which shows the manufacturing method of the cell of this invention. 先行文献1の図5の母基板を示す斜視図である。FIG. 6 is a perspective view showing the mother board of FIG. 先行文献2の図1のレーザの照射を示す斜視図である。It is a perspective view which shows irradiation of the laser of FIG. 従来のセルを示す斜視図である。It is a perspective view which shows the conventional cell.

符号の説明Explanation of symbols

1 母基板
2 セル
3 注入口
4 シール部材
5、6ガラス基板
7 端子部材
8 端材
9 割断予定線
10 レーザ割断手段
11 イニシャルクラック手段
12 割断予定線
13 割断開始点
14 照射スポット
15 (イニシャル)クラック
16 スクライブ手段
17 照射スポット
18 移動手段
19 水冷手段
20 ノズル
21 スクライブ溝
22 ブレイク手段
23 照射スポット
24 母基板平面内の第一方向
25 母基板平面内の第二方向
26 割断線
27 端部
DESCRIPTION OF SYMBOLS 1 Mother board 2 Cell 3 Inlet 4 Seal member 5 and 6 Glass board 7 Terminal member 8 End material 9 Cut planned line 10 Laser cleave means 11 Initial crack means 12 Cut planned line 13 Cut start point 14 Irradiation spot 15 (Initial) crack 16 Scribing means 17 Irradiation spot 18 Moving means 19 Water cooling means 20 Nozzle 21 Scribing groove 22 Breaking means 23 Irradiation spot 24 First direction 25 in the mother substrate plane 25 Second direction in the mother substrate plane 26 Break line 27 End

Claims (9)

二つの基板が一定距離を隔ててシール部材により貼り合わされてなる母基板上に並設するセルにおいて、隣接するセルと共有するシール部材の上部をレーザ割断手段により割断する少なくとも1つの端部を有することを特徴とするセル。   In a cell that is arranged side by side on a mother substrate in which two substrates are bonded to each other at a predetermined distance, at least one end portion that cleaves the upper portion of the seal member shared with an adjacent cell by a laser cleaving means A cell characterized by that. 前記レーザ割断手段は、スクライブ手段と、ブレイク手段と、前記スクライブ手段と前記ブレイク手段とを母基板に対して相対的に移動する移動手段とからなるものであって、
前記スクライブ手段が、
母基板上の割断予定線の割断開始点にクラックを生成するイニシャルクラック手段と、
母基板を加熱するレーザ手段と、
前記レーザ手段により加熱した母基板上の箇所を冷却する水冷手段と、
からなるものであって、
前記レーザ割断手段により割断する少なくとも1つの端部を有することを特徴とする請求項1に記載のセル。
The laser cleaving means comprises a scribing means, a breaking means, and a moving means for moving the scribing means and the breaking means relative to a mother substrate,
The scribing means,
An initial crack means for generating a crack at the cleaving start point of the cleaving line on the mother board;
Laser means for heating the mother substrate;
Water cooling means for cooling a portion on the mother substrate heated by the laser means;
Consisting of:
The cell according to claim 1, further comprising at least one end portion to be cleaved by the laser cleaving means.
前記レーザ割断手段の前記ブレイク手段が炭酸ガスレーザであって、前記レーザ割断手段により割断する少なくとも一つの端部を有することを特徴とする請求項1または2に記載のセル。 3. The cell according to claim 1, wherein the break means of the laser cleaving means is a carbon dioxide gas laser and has at least one end portion to be cleaved by the laser cleaving means. 二つの基板が一定距離を隔ててシール部材により貼り合わされてなる母基板を前記レーザ割断手段により、割断予定線上の割断開始点にクラックを生成するイニシャルクラック生成工程と、前記クラックを進展させるスクライブ工程と、母基板を割断するブレイク工程からなる割断方法で割断するセルの製造方法において、
母基板のシール部材の上部を含む直線上に割断予定線を設定した後、
母基板平面内の第一方向の割断予定線について、この割断線毎にイニシャルクラック生成工程と、スクライブ工程とからなる一連の工程を行った後、
母基板平面内の第二方向の各割断予定線ついて、この割断線毎にイニシャルクラック生成工程と、スクライブ工程と、ブレイク工程とからなる一連の工程を行うことにより母基板裏面を割断した後、
母基板裏面の第一方向の割断予定線ついて、この割断線毎にブレイク工程を行うことにより母基板を割断するセルの製造方法。
An initial crack generating step for generating a crack at a cutting start point on a planned cutting line by using the laser cutting means, and a scribing step for propagating the crack. And in the manufacturing method of the cell to be cleaved by the cleaving method consisting of the breaking process of cleaving the mother substrate,
After setting the planned cutting line on the straight line including the upper part of the sealing member of the mother board,
About the planned cutting line in the first direction in the mother board plane, after performing a series of steps consisting of an initial crack generation process and a scribing process for each cutting line,
For each planned breaking line in the second direction in the mother board plane, after cleaving the back of the mother board by performing a series of steps consisting of an initial crack generating process, a scribe process, and a breaking process for each breaking line,
A method for manufacturing a cell in which a mother substrate is cleaved by performing a breaking process for each cleaving line on a first-direction cleaving line on the back side of the mother substrate.
二つの基板が一定距離を隔ててシール部材により貼り合わされてなる母基板を前記レーザ割断手段により、割断予定線上にクラックを生成するイニシャルクラック生成工程と、前記クラックを進展させるスクライブ工程と、母基板を割断するブレイク工程からなる割断方法で割断するセルの製造方法において、
母基板のシール部材の上部を含む直線上に割断予定線を設定した後、
母基板表面内の第一方向と、第一方向と直交する第二方向とのそれぞれに平行して複数備える各割断予定線について、この割断線毎にイニシャルクラック生成工程と、スクライブ工程と、ブレイク工程とを連続して行うことにより母基板表面の基板を割断した後、
母基板裏面内の第一方向の各割断予定線について、この割断線毎にイニシャルクラック生成工程と、スクライブ工程とを連続して行った後、
母基板裏面内の第二方向の各割断予定線ついて、この割断線毎にイニシャルクラック生成工程と、スクライブ工程と、ブレイク工程とを連続して行って母基板裏面を割断した後、
母基板裏面の第一方向の割断予定線ついて、この割断線毎にブレイク工程を行うことにより母基板を割断するセルの製造方法。
An initial crack generating step for generating a crack on a planned cutting line by using the laser cutting means, a scribe step for causing the crack to propagate, and a mother substrate. In the manufacturing method of the cell to be cleaved by the cleaving method comprising the breaking step of cleaving
After setting the planned cutting line on the straight line including the upper part of the sealing member of the mother board,
For each of the split planned lines provided in parallel with each of the first direction in the mother board surface and the second direction orthogonal to the first direction, an initial crack generating process, a scribe process, and a break for each of the split lines After cleaving the substrate on the mother substrate surface by continuously performing the process,
For each planned breaking line in the first direction in the backside of the mother board, after performing the initial crack generation process and the scribing process for each breaking line,
About each planned breaking line in the second direction in the back side of the mother board, the initial crack generating process, the scribe process, and the breaking process are continuously performed for each breaking line, and the mother board back face is cleaved.
A method for manufacturing a cell in which a mother substrate is cleaved by performing a breaking process for each cleaving line on a first-direction cleaving line on the back side of the mother substrate.
前記イニシャルクラック生成工程は、前記イニシャルクラック手段により母基板の割断予定線上の割断開始点にクラックを生成するものであることを特徴とする請求項4または5に記載のセルの製造方法。   6. The method for manufacturing a cell according to claim 4, wherein the initial crack generation step generates a crack at a cleaving start point on a planned cutting line of the mother substrate by the initial crack means. 前記イニシャルクラック生成工程は、イニシャルクラック手段により母基板の割断予定線上の割断開始点にレーザを照射してクラックを生成するものであることを特徴とする請求項4または5に記載のセルの製造方法。   The cell manufacturing method according to claim 4 or 5, wherein the initial crack generating step is to generate a crack by irradiating a laser at a cutting start point on a planned cutting line of a mother substrate by an initial crack means. Method. 前記スクライブ工程は、前記レーザ照射手段により母基板の割断予定線上を加熱すると共に相対的に移動して、水冷手段により、加熱した箇所を冷却すると共に相対的に移動する一連のスクライブを生成する工程であることを特徴とする請求項4または5に記載のセルの製造方法。 The scribing step is a step of generating a series of scribing that heats and relatively moves the cleaved line of the mother substrate by the laser irradiation means, and cools the heated portion and relatively moves by the water cooling means. The method of manufacturing a cell according to claim 4 or 5, wherein 前記ブレイク工程は、前記ブレイク手段により母基板にレーザを照射することを特徴とする請求項4または5に記載のセルの製造方法。   6. The method of manufacturing a cell according to claim 4, wherein, in the breaking step, a laser is applied to the mother substrate by the breaking means.
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