JPH01187472A - Burn-in device - Google Patents

Abstract

PURPOSE:To perform temperature control over a body to be inspected effectively without increasing the amount of a heat medium and the scale, etc., of the device unnecessarily by controlling the temperature of the body through the heat medium. CONSTITUTION:Heat generated by a semiconductor device 5 in an operation state is conducted effectively to the heat medium spouted from individual nozzles 3 to the semiconductor device 5. The semiconductor device 5 becomes stable at prescribed test temperature determined by the temperature, flow velocity, flow rate, etc., of the heat medium 9 spouted from the nozzles 3 and in this state, a tester 6 decides whether or not operation characteristics are normal according to operation test signals sent to and received from individual semiconductor devices 5. The heat medium 9 which rises in temperature owing to the heat from the individual semiconductor devices 5 circulates in a storage tank 10 from the bottom part of the test tank 1 through a recovery pipe 12 and is controlled to prescribed temperature through the operation of a heat exchanger 14a and a temperature control part 14 and supplied again to the test tank 1 to circulate between the storage tank 1 and test tank 1 for use. Consequently, the temperature of the body is controlled effectively.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to burn-in test technology, and is particularly applicable to screening performed when shipping or receiving semiconductor devices that generate a large amount of heat during operation. Concerning effective techniques.

[Conventional technology]

For example, in semiconductor devices such as large-scale logic integrated circuits implemented in general-purpose computers, the amount of heat generated during operation continues to increase as power consumption increases due to faster operation. The current cooling method is shifting from the usual forced air cooling method to a liquid cooling method that uses a liquid-phase heat medium.

For this reason, when shipping or receiving this type of semiconductor device, screening is usually carried out as a means of stabilizing the quality of the product and eliminating products with unstable performance that do not meet a specified level of quality. In burn-in tests, in which semiconductor devices are operated under conditions such as temperature that are harsher than the operating conditions to detect latent defects, the following liquid-cooled burn-in equipment is used. It is possible to use it.

The outline of this method is to immerse the semiconductor device to be tested in a predetermined liquid and perform an operation test while cooling the entire liquid by forcibly stirring the liquid. The aim is to stably control the temperature rise caused by this to a predetermined set value.

Incidentally, the burn-in test technique is described in "Electronic Materials J, November 1986 issue, supplementary volume, pages 249 to 253, published by Kogyo Chosenkai Co., Ltd., November 18, 1986.

[Problem to be solved by the invention]

However, in the above-mentioned conventional technology, only a portion of the total heat medium stored in the test chamber comes into contact with the semiconductor device and actually contributes to cooling. This method has the disadvantage that it is necessary to increase the stirring speed of the heating medium throughout the test tank, which unnecessarily increases the amount of heating medium and the scale of the stirring mechanism.

Therefore, an object of the present invention is to provide a burn-in technique that can effectively control the temperature of an object to be inspected without unnecessarily increasing the amount of heat medium or the scale of the equipment. be.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Means to solve the problem]

A brief overview of typical inventions disclosed in this application is as follows.

That is, a test chamber that accommodates the test object, a test power supply system that supplies at least one of electric power and operation signals to the test object, and at least one test power system for each test object. The apparatus is provided with a heat medium injection means for injecting and supplying a liquid phase heat medium, and a temperature control system for controlling the temperature of the object to be inspected via the heat medium.

[Effect]

According to the above means, since the liquid heat medium is injected and supplied from the heat medium injection means to each object to be inspected, almost the entire amount of the flowing heat medium effectively contributes to temperature control of the object to be inspected. Therefore, the temperature of the object to be inspected can be effectively controlled without unnecessarily increasing the amount of heat medium or the scale of the apparatus.

〔Example〕

FIG. 1 is an explanatory diagram showing the main parts of a burn-in device that is an embodiment of the present invention.

A distribution tank 2 is housed inside the sealed test tank 1 .

A plurality of distribution pipes 2a are vertically protruded from the top of the distribution tank 2, and a plurality of nozzles 3 (thermal medium injection means) are horizontally protruded from each side of the distribution pipes 2a. has been done.

A plurality of test stands 4 are arranged at positions facing the plurality of nozzles 3 provided in the distribution pipe 2a, and on each test stand 4, at a portion corresponding to the tip of each nozzle 3, A semiconductor device 5 (object to be inspected) such as a large-scale logic integrated circuit device mounted on the board 5a is removably locked.

This test stand 4 is connected to a tester 6 (test power supply system) consisting of, for example, a computer and a power supply, and from this tester, a plurality of It is configured to supply operating power to the semiconductor device 5 and input/output operation test signals.

The test chamber 1 is also provided with a door (not shown), through which a plurality of semiconductor devices 5 can be attached to and removed from the test stand 4.

The bottom of the distribution tank 2 is connected to the branch end of a plurality of branched main pipes 7, and the base end side of the main pipe 7 is connected via a pump 8 to a storage tank 10 in which a liquid heat medium 9 is stored. It is connected to the.

Then, by operating the pump 8, the storage tank 10
The heat medium 9 stored in the heating medium 9 is individually injected and supplied to each of the plurality of semiconductor devices 5 through the main pipe 71, the distribution tank 21, the branch pipe 2a, and the nozzle 3.

A test tank 1 is provided on the discharge side of the pump 8 in the main pipe 7.
A filter 11 is interposed to remove ionic impurities, moisture, etc. contained in the heat medium 9 supplied to the interior of the heat exchanger.

The bottom of the test tank 1 is connected to a storage tank 10 through a recovery pipe 12, and the heat medium 9 that has been sprayed and supplied to the semiconductor device 5 through the plurality of nozzles 3 and then scattered inside the test tank 1 is stored. It is configured to flow back into the tank 10.

In addition, inside the test chamber 1, a condenser 13a is disposed in a space above the plurality of test stands 4, and a condenser 13a (not shown) is configured to circulate between the condenser 13a and a refrigerator 13 provided outside the test chamber 1. It is configured to be cooled by a refrigerant.

Then, a part of the heat medium 9 that is evaporated by the heat of the semiconductor device 5 and volatilized in the internal space of the test chamber 1 is liquefied by touching the condenser 13a, and is dropped to the bottom of the test chamber 1 and collected. It is composed of

Furthermore, a tubular heat exchange body 14a (
A temperature control system (temperature control system) is provided, and heat is supplied from the storage tank 10 to the test chamber 1 via a heat medium (not shown) that circulates between the temperature control unit 14 (temperature control system) provided outside. The structure is such that the temperature of the heat medium 9 is controlled to a desired value.

The operation of this embodiment will be explained below.

First, the heat medium 9 inside the storage tank 10 is transferred to the heat exchanger 14a.
The temperature is set to a predetermined temperature by the temperature control unit 14, and the plurality of test stands 4 of the test chamber 1 are controlled through a door (not shown).
A plurality of semiconductor devices 5 mounted on a board 5a are mounted on each of the boards 5a.

Thereafter, the pump 8 is started, and the heat medium 9 at a predetermined temperature inside the storage tank 10 passes through the filter 11 to remove ionic impurities and moisture, and then passes through the main pipe 72, distribution tank 21, and branch pipes. 2a and the plurality of nozzles 3, the liquid is sprayed and supplied to each of the plurality of semiconductor devices 5 fixed on the test stand 4 individually and at approximately equal flow rates and flow rates.

At this time, after colliding with the surface of the semiconductor device 5, the heat medium 9 injected from the nozzle 3 suddenly changes direction in the direction along the surface of the semiconductor device 5, and the surface of the semiconductor device 5 has a heat transfer coefficient of The state is covered by the flow of the heat medium 9 having a large thin boundary layer.

In this state, the cable 5a is sent from the tester 6.

Test stand4. Operating power, operation test signals, and the like are applied to each semiconductor device 5 via the board 5a, and each semiconductor device 5 is brought into a predetermined operating state.

At this time, the heat generated from the semiconductor device 5 in the operating state is effectively transferred to the heat medium 9 that is injected and supplied from the individual nozzles 3 to the semiconductor device 5, and the individual semiconductor device 5 is The test temperature is stabilized at a predetermined test temperature determined by the temperature, flow rate, flow rate, etc. of the supplied heat medium 9, and in this state, operation is continued for a predetermined time, and the tester 6 is transferred to and from each semiconductor device 5. It is determined whether the operating characteristics are acceptable or not based on the operating test signal etc.

On the other hand, the heat medium 9 whose temperature has increased due to the heat from the individual semiconductor devices 5 flows back into the storage tank 10 from the bottom of the test tank 1 through the recovery pipe 12, and is activated by the heat exchanger 14a and the temperature controller 14. After being brought to a predetermined temperature, it is again supplied to the test tank 1 and used by circulating between the storage tank 10 and the test tank 1.

Further, a part of the heat medium 9 volatilized in the internal space of the test tank 1 is condensed by the condenser 13a, drops onto the bottom of the test tank 1, and is then collected into the storage tank 10 through the recovery pipe 12.

Here, as in the conventional case, the semiconductor device 5 is placed inside the heat medium 9.
In the method of improving the cooling efficiency by immersing the heat medium 9 and stirring the heat medium 9, only a small amount of the whole heat medium 9 actually comes into contact with the semiconductor device 5 and contributes to temperature control. When a semiconductor device 5 such as a bipolar large-scale logic integrated circuit device generates an extremely large amount of heat during operation, it is essential to increase the amount of heat medium 9 or increase the stirring speed more than necessary. Then,
It is inevitable that the size of the device will increase as the required power and dimensions of the pump 8 and other equipment increase.

However, in the case of this embodiment, since the structure is such that the heat medium 9 is intensively sprayed and supplied from the nozzle 3 to each individual semiconductor device 5, there is no space between the test tank 1 and the storage tank 10. Almost the entire amount of the circulating heat medium 9 can be brought into contact with the semiconductor device 5 to reliably contribute to temperature control.

Furthermore, in the heat medium 9 that is injected from the nozzle 3 and contacts the surface of the semiconductor device 5 at high speed, the boundary layer (not shown) formed between the heat medium 9 and the surface of the semiconductor device 5 is thin, as described above. Therefore, the heat transfer resistance is reduced, and the heat transfer efficiency between the semiconductor device 5 and the heat medium 9 is improved.

Therefore, even in the case of a semiconductor device 5 that generates an extremely large amount of heat during operation, the heat medium can be used without increasing the amount of heat medium 9 or the size of attached equipment such as the pump 8 that circulates the heat medium 9 unnecessarily. 9 can effectively control the temperature of the semiconductor device 5.

The present invention is characterized by the fact that cooling efficiency is very high by setting a semiconductor device near the spout and applying the refrigerant to the semiconductor device in the form of a so-called jet stream, and that each of a plurality of semiconductor devices can be cooled under almost the same cooling conditions. It can be cooled down.

As described above, according to this embodiment, the following effects can be obtained.

(1) Since the structure is such that the heat medium 9 is intensively sprayed and supplied from the nozzle 3 to each of the eight individual semiconductor devices 5,
Almost the entire amount of the heat medium 9 circulating between the test tank 1 and the storage tank 10 can be brought into contact with the semiconductor device 5 to reliably contribute to temperature control such as cooling, and the semiconductor device 5 generates an extremely large amount of heat during operation. Even in such cases, the amount of heat medium 9,
The temperature of the semiconductor device 5 can be effectively controlled by the heat medium 9 without unnecessarily increasing the size of accessory equipment such as the pump 8 that circulates the heat medium.

(2) As a result of (1) above, it is possible to downsize the burn-in device, and it is possible to improve productivity in the aging process and the like in manufacturing the semiconductor device 5.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, it goes without saying that each individual semiconductor device may be provided with a plurality of nozzles.

The above explanation has mainly been about the case where the invention made by the present inventor is applied to the burn-in technology of semiconductor devices, which is the background application field, but the invention is not limited to this. It can be widely applied to technologies that require efficient control of temperature.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

That is, a test chamber that accommodates the object to be inspected, a test power supply system that supplies at least one of a power ring and an operation signal to the object to be inspected, and at least one test power system for each of the objects to be inspected; The structure includes a heat medium injection means for injecting a liquid phase heat medium to each object, and a temperature control system that controls the temperature of the object to be inspected via the heat medium. By injecting and supplying the liquid heat medium from the heat medium injection means to the object to be inspected, almost the entire amount of the flowing heat medium effectively contributes to temperature control of the object to be inspected, and the amount of heat medium The temperature of the object to be inspected can be effectively controlled without unnecessarily increasing the size of the device or the equipment.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing the main parts of a burn-in device which is an embodiment of the present invention. 1... Test tank, 2... Distribution tank, 2a... Distribution pipe,
3... Nozzle (thermal medium injection means), 4... Test stand,
5... Semiconductor device (tested object), 5a... Board,
6... Tester (test power supply system), 6a... Cable,
7... Main piping, 8... Pump, 9... Heat medium, 1
0... Storage tank, 11... Filter, 12... Recovery pipe, 13... Freezer, 13a... Condenser, 14...
- Temperature control section (temperature control system), 14a... heat exchanger temperature control system). Agent Patent Attorney Daiwa Tsutsui

Claims (1)

[Claims] 1. A test chamber for accommodating an object to be inspected, a test power supply system for supplying at least one of electric power and an operation signal to the object to be inspected, and at least one test power system provided for each of the objects to be inspected. is,
It is characterized by comprising a heat medium injection means for injecting a liquid phase heat medium to each of the objects to be inspected, and a temperature control system that controls the temperature of the objects to be inspected via the heat medium. burn-in equipment. 2. The burn-in apparatus according to claim 1, wherein the object to be inspected is a semiconductor device that is cooled by a liquid-phase heat medium during mounting.