JP2000214213A - Burn-in apparatus and method for performing aging semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a burn-in apparatus capable of performing a superior aging which can uniformly control temperatures of respective semiconductor devices when the aging of a plurality of the semiconductor devices with a uniform heat generation amount is performed, and a method for performing the aging of a semiconductor device using the same. SOLUTION: In the burn-in apparatus in which a plurality of nozzles 3 (3a to 3f) corresponding to a plurality of semiconductor device mounting substrates 2 (2a to 2f) are provided, and the nozzle 3 for jetting a coolant 5 is arranged in a lower part of semiconductor devices 11 (11a to 11f) mounted in a lower part of each semiconductor device mounting substrate 2, the diameter of an inner cylinder at top ends of the plurality of nozzles 3 has various values. The diameter of the inner cylinder at the top end of each nozzle 3 is changed in response to each of the semiconductor devices, and it is possible to regulate a flow rate of the coolant jetted from each of the nozzle so that temperatures of each of the semiconductor devices are uniformized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a burn-in apparatus and a method for aging a semiconductor device using the same.
In particular, when aging a plurality of semiconductor devices having non-uniform heating values, a burn-in device capable of uniformly controlling the temperature of each semiconductor device and performing excellent aging, and a method of aging a semiconductor device using the same. It is about.

[0002]

2. Description of the Related Art The present inventor has studied a burn-in apparatus used in an aging method for a semiconductor device.
The following is a technique studied by the present inventors, and the outline is as follows.

That is, in a burn-in apparatus used for an aging method of a semiconductor device, a plurality of LSs are used.
A burn-in apparatus is used in which a cooling medium is injected from an individual nozzle to an I (Large Scale Integrated Circuit) to perform cooling.

In this case, as the individual nozzles in the burn-in apparatus, nozzles having the same inner diameter (2.5 mm) of the inner cylinder at the tip of each nozzle (the cylindrical hole at the tip of the nozzle) are applied. I have.

[0005] References describing the burn-in apparatus include, for example, “Semiconductor Manufacturing Equipment Glossary”, p. 36, published by Nikkan Kogyo Shimbun on November 20, 1997.
3 to 367.

[0006]

However, the present inventor has found that the above-described burn-in apparatus has the following problems.

That is, in the conventional burn-in device, the thermal resistance varies among the individual nozzles.

Further, in an LSI having a small heat generation amount, the variation in the chip temperature of the LSI among the nozzles is small, and it is possible to control the chip temperature of each LSI to the same temperature. However, in an LSI having a large heat generation amount, the chip temperature of the LSI varies greatly among the nozzles, and the chip temperature of each LSI cannot be controlled uniformly.

SUMMARY OF THE INVENTION An object of the present invention is to provide a burn-in device which can control the temperature of each semiconductor device uniformly when aging a plurality of semiconductor devices having non-uniform heating values and perform excellent aging. An object of the present invention is to provide a method of aging a semiconductor device used.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, (1). The burn-in apparatus of the present invention has a plurality of nozzles corresponding to a plurality of semiconductor device mounting substrates, and a nozzle for injecting a cooling medium to a lower portion of the semiconductor device mounted below each semiconductor device mounting substrate. The burn-in device is arranged, wherein the diameter of the inner cylinder at the tip of the plurality of nozzles has various values.

(2). A method for aging a semiconductor device according to the present invention includes aging the semiconductor device using the burn-in device described in (1).

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

FIG. 1 is a schematic configuration diagram showing a vertical section of a burn-in device according to an embodiment of the present invention.

As shown in FIG. 1, the burn-in apparatus of this embodiment is effective when applied to a burn-in test of a semiconductor device constituting an electronic device having a high heat generation density such as a large-sized computer. Six (plural) semiconductor device mounting substrates 2 (2a to 2f) are installed inside the tank 1. In this case, each of the semiconductor device mounting substrates 2 (2a to 2a)
The semiconductor device 11 (11a to 11f) is mounted on the lower part of 2f), and the surface of the semiconductor device 11 (11a to 11f) is set downward.

Further, the burn-in device of the present embodiment
Six (plural) semiconductor device mounting substrates 2 (2a to 2a)
f) there are six (plural) nozzles 3 (3a to 3f) corresponding to the semiconductor device 11 (11a to 11f) mounted below each semiconductor device mounting substrate 2 (2a to 2f).
f) Nozzles 3 (3a-3
f) is arranged.

The nozzles 3 (3a to 3f) are installed on the nozzle fixed body 8, and the nozzle fixed body 8
A sub-tube 7 which is mechanically connected to a cooling medium tube 6 which is a flow tube of the above is connected.

The cooling medium pipe 6 is connected to a cooling medium tank 4 having a function of allowing the cooling medium 5 to flow out. The cooling medium pipe 6 at the end of the cooling medium tank 4 has a pump 9 and a cooling medium flow control valve. 10 have been intervened.

In the burn-in apparatus of the present embodiment, the diameter of the inner cylinder at the tip (cylindrical hole at the tip of the nozzle) of the six (plural) nozzles 3 (3a to 3f) has various values. The components other than the six (plural) nozzles 3 (3a to 3f) can be applied to components in various modes.

Specifically, as a result of the study by the present inventor, the diameter of the inner cylinder at the tip of the four nozzles 3a, 3c, 3d, and 3f is 2.5 mm, and the diameter of the inner cylinder at the tip of one nozzle 3b is 2.5 mm. The diameter of the cylinder is 3.5 mm, and the diameter of the inner cylinder at the tip of one nozzle 3e is 1.5 mm.

As a result of the study by the present inventors, individual nozzles (nozzles in which the diameter of the inner cylinder at the tip of each nozzle is the same) depending on different places (positions) inside the test tank 1 in the conventional burn-in apparatus. 2, the semiconductor device mounting substrates 2 (2a
To 2f), each semiconductor device 11 (1
It has been found that variations occur in the temperatures 1a to 11f) (for example, chip temperatures). Therefore, in the burn-in device of the present embodiment, each semiconductor device 1
1 (11a to 11f) (for example, a temperature of a chip) is prevented, and the semiconductor device 11 (11a to 11f)
In order to uniformly control the temperature (for example, the temperature of the chip), the diameters of the inner cylinders at the tips of the six (plural) nozzles 3 (3a to 3f) have various values.

In this case, six (plural) nozzles 3 (3
The information including actual measured values for setting the diameter of the inner cylinder at the tip to various values in a to 3f) is shown in FIGS. 2 and 3 created by the present inventors. FIG. 2 is a diagram showing the relationship between the flow rate (m / s) of the cooling medium at the nozzle and the thermal resistance (° C./W). FIG. 3 is a diagram showing the relationship between the diameter (mm) of the inner cylinder at the tip of the nozzle and the flow rate (m / s) of the cooling medium.

Using the information shown in FIGS. 2 and 3, according to the burn-in apparatus of the present embodiment, the inner cylinder at the tip of six (plural) nozzles 3 (3a to 3f) is formed. By having various values of the diameter, the cooling medium 5
When the flow rate is 10 liters, the calorific value is 500W to 60W.
0W, and each semiconductor device 11 (11a
To 11f) (for example, the temperature of the chip) can be set to 165 ° C., and each semiconductor device 11 (11a to 11f)
The temperature of f) can be controlled uniformly.

According to the above-described burn-in apparatus of the present embodiment, the diameter of the inner cylinder at the tip of each of the six (plural) nozzles 3 (3a to 3f) has various values. Nozzles 3 (3a-3)
Since the diameter of the inner cylinder at the tip in f) is changed to various values, each of the six (plural) nozzles 3 (3a-3)
f) Variation of thermal resistance can be prevented, and 6 (multiple)
Of the cooling medium 5 injected from each of the nozzles 3 (3a to 3f) can be adjusted. As a result, each semiconductor device 11
(11a-11f) (for example, the temperature of a chip) is prevented, and each semiconductor device 11 (11a-11
The temperature f) (for example, the temperature of the chip) can be controlled uniformly.

Therefore, according to the burn-in apparatus of the present embodiment, when aging a plurality of semiconductor devices 11 (11a to 11f) having non-uniform heating values, each semiconductor device 11 (11a to 11f) Can be controlled uniformly and a burn-in device capable of excellent aging can be obtained.

A method for aging a semiconductor device using the burn-in device of the present embodiment is as follows.

That is, the semiconductor device 11 (11a to 11f) made of, for example, an LSI is
a to 2f), and mounted on the semiconductor device 11 (11a to 11f).
11f) The surface is set downward.

Next, the cooling medium 5 flows out of the cooling medium tank 4, and the adjustment of the flow rate of the cooling medium 5 is controlled by the pump 9, and the adjusted cooling medium 5 flows out to the cooling medium pipe 6.

Then, the cooling medium 5 is injected by the nozzles 3 (3a to 3f) to the respective semiconductor devices 11 (11a to 11f) each of which generates a large amount of heat of, for example, about 600 W or more. 1
1 (11a-11f) is cooled.

In this case, as a feature of the aging method of the semiconductor device using the burn-in device of the present embodiment, for example, the semiconductor device 11 (1
1a to 11f) (for example, the temperature of a chip) is different, the plurality of semiconductor devices 11 (11a to 11f) are different.
11f), the injection velocity of the cooling medium 5 (the flow velocity of the cooling medium 5 injected from each of the plurality of nozzles 3) is changed by changing the diameter of the inner cylinder at the tip of the nozzle 3 (3a to 3f). I am adjusting.

According to the aging method of the semiconductor device of the present embodiment described above, the aging method of the semiconductor device using the burn-in device of the present embodiment provides
When the temperatures (for example, chip temperatures) of the plurality of semiconductor devices 11 (11a to 11f) are different, the nozzles 3 (3a to 3f) corresponding to the plurality of semiconductor devices 11 (11a to 11f) are different. By changing the diameter of the inner cylinder at the tip, the injection flow rate of the cooling medium 5 (a plurality of nozzles 3
The flow rate of the cooling medium 5 injected from the nozzles is adjusted, so that a plurality of the respective semiconductor devices 11 (11a to 11a) are adjusted.
The aging condition of f) can be made the same.

Therefore, according to the aging method of the semiconductor device of the present embodiment, since the aging method of the semiconductor device using the burn-in device of the present embodiment, the plurality of semiconductor devices 11 (11a to 11a to 11
Since the aging condition of f) can be made the same, excellent aging can be performed.

According to the aging method for a semiconductor device of the present embodiment, since the aging method for a semiconductor device using the burn-in device of the present embodiment is performed, the semiconductor integrated circuit composed of an LSI or the like that generates a large amount of heat, When aging the devices, the temperatures of the plurality of semiconductor integrated circuit devices (for example, the temperatures of the chips) may be extremely different, but the nozzles 3 (3a to 3a to 3c) corresponding to the plurality of respective semiconductor integrated circuit devices 3f), the injection flow rate of the cooling medium 5 (flow rate of the cooling medium 5 injected from each of the plurality of nozzles 3) is adjusted by changing the diameter of the inner cylinder at the tip, so that each of the plurality of semiconductors An LSI that generates a large amount of heat because the aging conditions of the integrated circuit device can be made the same.
Excellent aging can be performed when aging a semiconductor integrated circuit device including the above.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, the burn-in device of the present invention can be applied to various types of burn-in devices having a plurality of nozzles corresponding to a plurality of semiconductor device mounting substrates other than six.

In the above embodiment, the case where the present invention is applied to the aging method of a semiconductor device having a large heat value has been described.
The present invention can also be applied to aging when a semiconductor device that generates a relatively large amount of heat is included.

Further, various semiconductor integrated circuit device chips can be applied as semiconductor chips in a semiconductor device used in the burn-in device of the present invention and the aging method of the semiconductor device using the same, and are formed on the semiconductor chip. MOSFET, CMOSF as semiconductor element
ET or bipolar transistor or a semiconductor element combining them can be used.
The present invention can be applied to a MOS-type, BiMOS-type, or BiCMOS-type semiconductor integrated circuit device.

Further, as a semiconductor device used in the burn-in device of the present invention and the aging method of the semiconductor device using the same, MOSFET, CMOSFET, Bi
Logic system or SRAM (Static Random Access) having MOSFET, BiCMOSFET, etc. as constituent elements
Memory), DRAM (Dynamic Random Access Memor)
Various semiconductor integrated circuit devices having a memory system such as y) can be applied.

[0040]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the burn-in apparatus of the present invention, since the diameter of the inner cylinder at the tip of the plurality of nozzles has various values, the diameter of the inner cylinder at the tip of each of the plurality of nozzles is changed to various values. Therefore, it is possible to prevent variations in the thermal resistance of each of the plurality of nozzles, and to adjust the flow velocity of the cooling medium injected from each of the plurality of nozzles. As a result, variation in the temperature of each semiconductor device (for example, the temperature of the chip) can be reduced, and the temperature of each semiconductor device can be controlled uniformly.

Therefore, according to the burn-in apparatus of the present invention, when aging a plurality of semiconductor devices having non-uniform heating values, the temperature of each semiconductor device can be controlled uniformly, so that excellent aging can be performed. It can be a burn-in device.

(2). According to the aging method for a semiconductor device of the present invention, the aging method for a semiconductor device using the burn-in device of the present invention allows a plurality of semiconductor devices to have different temperatures (for example, chip temperatures).
The diameter of the inner cylinder at the tip of the nozzle corresponding to each of the plurality of semiconductor devices is changed to adjust the cooling medium injection flow rate (the flow rate of the cooling medium injected from each of the plurality of nozzles). Therefore, the aging conditions of the plurality of semiconductor devices can be made the same.

Therefore, according to the method of aging a semiconductor device of the present invention, the aging condition of a plurality of semiconductor devices can be equalized by the method of aging a semiconductor device using the burn-in device of the present invention. , Excellent aging can be performed.

(3). According to the aging method for a semiconductor device of the present invention, the aging method for a semiconductor device using the burn-in device of the present invention is particularly useful when aging a semiconductor integrated circuit device composed of an LSI or the like that generates a large amount of heat. In some cases, the temperatures of a plurality of semiconductor integrated circuit devices (eg, the temperatures of chips) are extremely different.
By changing the diameter of the inner cylinder at the tip of the nozzle corresponding to each of the plurality of semiconductor integrated circuit devices, the injection flow rate of the cooling medium (the flow rate of the cooling medium injected from each of the plurality of nozzles) is adjusted. Therefore, the aging condition of each of the plurality of semiconductor integrated circuit devices can be made the same, so that excellent aging can be performed when aging a semiconductor integrated circuit device such as an LSI that generates a large amount of heat.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing a vertical section of a burn-in device according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a relationship between a flow rate of a cooling medium at a nozzle and a thermal resistance.

FIG. 3 is a diagram showing a relationship between a diameter of an inner cylinder at a tip of a nozzle and a flow rate of a cooling medium.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Test tank 2, 2a-2f Semiconductor device mounting board 3, 3a-3f Nozzle 4 Cooling medium tank 5 Cooling medium 6 Cooling medium pipe 7 Sub pipe 8 Nozzle fixed body 9 Pump 10 Cooling medium flow control valve 11, 11a-11f Semiconductor apparatus

Claims (5)

[Claims] 1. A plurality of nozzles corresponding to a plurality of semiconductor device mounting substrates, and a nozzle for injecting a cooling medium is arranged below the semiconductor device mounted below each of the semiconductor device mounting substrates. Wherein the diameter of the inner cylinder at the tip of each of the plurality of nozzles has various values. 2. The burn-in apparatus according to claim 1, wherein the diameter of the inner cylinder at the tip of each of the plurality of nozzles is changed corresponding to each of the semiconductor devices. A burn-in device wherein the flow rate of the cooling medium injected from each of the nozzles can be adjusted so that the temperature becomes uniform. 3. The burn-in apparatus according to claim 1, wherein the inner cylinder at the tip of each of the plurality of nozzles has a diameter of 1.5 mm, 2.5 mm, or 3.5 mm. Burn-in device. 4. The burn-in apparatus according to claim 1, wherein the number of the nozzles is six, the number of the inner cylinder at the tip is 1.5 mm, and the diameter of the inner cylinder at the tip is one. But
There are four 2.5mm nozzles, and the diameter of the inner cylinder at the tip is 3.
A burn-in device comprising one 5 mm nozzle. 5. An aging method for a semiconductor device, wherein the aging of the semiconductor device is performed using the burn-in apparatus according to claim 1.