JPH01181544A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH01181544A JPH01181544A JP63005066A JP506688A JPH01181544A JP H01181544 A JPH01181544 A JP H01181544A JP 63005066 A JP63005066 A JP 63005066A JP 506688 A JP506688 A JP 506688A JP H01181544 A JPH01181544 A JP H01181544A
- Authority
- JP
- Japan
- Prior art keywords
- attracted
- voltage
- conductor
- force
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 239000012212 insulator Substances 0.000 claims description 23
- 238000001179 sorption measurement Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 abstract description 10
- 238000000926 separation method Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- 230000005284 excitation Effects 0.000 description 10
- 238000003825 pressing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
【産業上の利用分野〕
本発明は、例えば半導体集積回路の製造装置において用
いられ、その表面上に成膜処理又はエツチング処理等の
各種処理を施される試料を、静電力により吸着、保持す
る静電チャックに関する。Detailed Description of the Invention [Industrial Application Field] The present invention is used, for example, in a semiconductor integrated circuit manufacturing apparatus, and is used to process a sample whose surface is subjected to various treatments such as film formation or etching. This invention relates to an electrostatic chuck that attracts and holds by electrostatic force.
例えば、電子サイクロトロン共鳴(E 1ectron
旦yclotron Re5onance)を利用し
て生成されるIECRプラズマにより、半導体基板上に
所望の物質の薄膜を形成せしめるCV口(Che+m1
cal V aporDeposition )装置、
半導体基板上に微細な回路パターンを形成せしめるドラ
イエツチング装置等の半導体集積回路の製造装置は、プ
ラズマ生成室内に生成されるECRプラズマを、例えば
発散磁界の作用により引出し、プラズマ生成室に連設し
た試料室内に保持された半導体基板上に照射して、該基
板上に薄膜の形成文はエツチングを行うものであり、こ
れらの装置においては、半導体基板を試料室内に保持す
るために、静電吸着作用を利用する静電チャックが用い
られている。For example, electron cyclotron resonance (E 1 ectron resonance)
A CV port (Che+m1) is used to form a thin film of a desired material on a semiconductor substrate using IECR plasma generated using
calVaporDeposition) device,
Semiconductor integrated circuit manufacturing equipment, such as dry etching equipment that forms fine circuit patterns on semiconductor substrates, extracts ECR plasma generated in a plasma generation chamber by the action of a divergent magnetic field, and connects it to the plasma generation chamber. The semiconductor substrate held in the sample chamber is irradiated with light to form a thin film on the substrate. In these devices, electrostatic adsorption is used to hold the semiconductor substrate in the sample chamber. Electrostatic chucks that utilize this action are used.
この静電チャックとして、薄膜状の絶縁体にて外側を被
覆してある平板状の導電体を前記試料室内に固設し、絶
縁体の表面に被吸着物である半導体基板を密接させ、導
電体と半導体基板との間に所定の直流電圧を印加して、
両者間に静電力を生ぜしめ、この静電力により半導体基
板を導電体上に吸着、保持する構成とした単極式の静電
チャックがある。As this electrostatic chuck, a flat conductor whose outer surface is covered with a thin film insulator is fixed in the sample chamber, and the semiconductor substrate to be attracted is brought into close contact with the surface of the insulator. By applying a predetermined DC voltage between the body and the semiconductor substrate,
There is a monopolar electrostatic chuck that generates an electrostatic force between the two and uses this electrostatic force to attract and hold a semiconductor substrate on a conductor.
さてこのような静電チャックにおいては、吸着・状態に
ある被吸着物を取外す場合、前記直流電圧の印加を中断
し、静電力を消滅させた後、被吸着物を離脱させる手順
により行っている。ところが、前記中断の後においても
、導電体を被覆する絶縁体に電荷が残留し、静電力が暫
時残存するため、被吸着物の取外しが可能となるまでに
多大の待ち時間が必要であるという難点があり、また、
残存する静電力に抗して被吸着物を離脱せしめるべく、
これに大きい離脱力を加えた場合、特に被吸着物が半導
体基板のように壊れ易い物体であるときに、前記離脱力
によって被吸着物が破壊される虞があった。Now, in such an electrostatic chuck, when removing an object that is in the attracted state, the procedure is to interrupt the application of the DC voltage, eliminate the electrostatic force, and then detach the object. . However, even after the above-mentioned interruption, a charge remains in the insulator covering the conductor and electrostatic force remains for a while, so a long waiting time is required before the object to be attracted can be removed. There are difficulties, and
In order to force the adsorbed object to detach against the remaining electrostatic force,
When a large detachment force is applied to this, there is a risk that the detachment force may destroy the attractable object, especially when the attractable object is a fragile object such as a semiconductor substrate.
第4図は、従来の静電チャックによりシリコン半導体基
板を吸着した場合において、直流電圧の印加時に生じる
吸着力と、印加を中断した直後における残留吸着力とを
示すグラフであり、図中1、Q印は前者を、また・印は
後者を示している。本図に示す如く、従来の静電チャッ
クにおいては、前記残留吸着力が吸着時間の増大に伴っ
て増大し、20分間の吸着を行った後直流電圧の印加を
中断した場合、電圧印加時における吸着力の略50%の
大きさを有する吸着力が、中断直後に残留していること
が明らかである。FIG. 4 is a graph showing the adsorption force generated when a DC voltage is applied and the residual adsorption force immediately after the application is interrupted when a silicon semiconductor substrate is adsorbed by a conventional electrostatic chuck. The Q mark indicates the former, and the * mark indicates the latter. As shown in this figure, in the conventional electrostatic chuck, the residual adsorption force increases as the adsorption time increases, and when the application of DC voltage is interrupted after adsorption for 20 minutes, the It is clear that a suction force having a magnitude of approximately 50% of the suction force remains immediately after the interruption.
本発明は斯かる事情に鑑みてなされたものであり、被吸
着物が破壊されることなく、速やかに離脱可能な静電チ
ャックを提供することを目的とする。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide an electrostatic chuck that can quickly remove an object to be attracted without being destroyed.
本願の第1の発明に係る静電チャックは、絶縁体にて外
側を被覆してある導電体と、前記絶縁体の表面に接触す
る被吸着物との間に直流電圧を印加し、両者間に生じる
静電力により、前記被吸着物を吸着、保持する静電チャ
ックにおいて、前記被吸着物を離脱せしめる際に、該被
吸着物と前記導電体との間に、吸着時と逆方向の直流電
圧を印加する逆電圧印加手段を具備することを特徴とし
、また本願の第2の発明に係る静電チャックは、前記逆
電圧印加手段と、該手段の動作時に、前記被吸着物に、
前記導電体から離脱する方向への所定の力を加える離脱
力付与手段とを具備することを特徴とする。The electrostatic chuck according to the first invention of the present application applies a DC voltage between a conductor whose outer surface is covered with an insulator and an object to be attracted that is in contact with the surface of the insulator. In an electrostatic chuck that attracts and holds an object by an electrostatic force generated in the electrostatic chuck, when the object is released, a direct current is generated between the object and the conductor in the opposite direction to that during attraction. The electrostatic chuck according to the second invention of the present application is characterized in that the electrostatic chuck is equipped with a reverse voltage applying means for applying a voltage, and the electrostatic chuck according to the second invention of the present application has the reverse voltage applying means, and when the means operates, a
It is characterized by comprising a detachment force applying means for applying a predetermined force in a direction of detachment from the conductor.
本願の第1の発明においては、被吸着物を離脱させるに
先立ち、前記逆電圧印加手段により、被吸着物と導電体
との間に吸着時と逆方向の直流電圧を印加し、両者間に
生じている静電力を低減させた後、被吸着物を離脱せし
める。また、本願の第2の発明においては、前記逆電圧
印加手段の動作と共に前記離脱力付与手段を動作させ、
被吸着物と導電体との間の静電力が低減され、これが離
脱力付与手段により被吸着物に加えられる離脱力よりも
小さくなった時点で、この離脱力により被吸着物が離脱
せしめられる。In the first invention of the present application, prior to detaching the object to be attracted, the reverse voltage applying means applies a DC voltage between the object to be attracted and the conductor in the opposite direction to that during attraction, and between the two. After reducing the generated electrostatic force, the object to be attracted is released. Further, in the second invention of the present application, the detachment force applying means is operated together with the operation of the reverse voltage applying means,
When the electrostatic force between the attraction object and the conductor is reduced and becomes smaller than the detachment force applied to the attraction object by the detachment force applying means, the attraction object is detached by this detachment force.
以下本発明をその実施例を示す図面に基づいて詳述する
。第1図は本発明に係る静電チャックの構成を示す模式
的断面図である。The present invention will be described in detail below based on drawings showing embodiments thereof. FIG. 1 is a schematic cross-sectional view showing the structure of an electrostatic chuck according to the present invention.
図において1は、円板状をなす導電体であり、該導電体
lの外表面は、その全面に亘って絶縁体2にて被覆され
ている。ECRプラズマを用いた半導体製造装置におい
ては、前記絶縁体2として、耐熱性に優れたセラミック
(Alt O+ )が用いられ、該絶縁体2は、これの
焼成時に導電体1を一体的にモールドするか、又は導電
体1の表面に溶射せしめることにより、導電体1の表面
に薄膜状をなして被着される。In the figure, reference numeral 1 denotes a disk-shaped conductor, and the outer surface of the conductor 1 is covered with an insulator 2 over its entire surface. In a semiconductor manufacturing device using ECR plasma, a ceramic (Alt O+) with excellent heat resistance is used as the insulator 2, and the insulator 2 is integrally molded with the conductor 1 during firing. Alternatively, it can be deposited in a thin film form on the surface of the conductor 1 by thermal spraying on the surface of the conductor 1.
導電体1は、電源切換スイッチ7を介して、負極側をア
ースに接続してある第1の直流電源5の正極側と、正極
側をアースに接続してある第2の直流電源6の負極側と
に夫々接続してあり、電源切換スイッチ7が第1図に示
す切換位置にある場合、導電体1は、前記第1の直流電
源5に接続されて正に帯電し、また逆の切換位置にある
場合、第2の直流電源6に接続されて負に帯電するよう
になしてある。The conductor 1 is connected to the positive side of a first DC power supply 5 whose negative side is connected to ground via a power supply changeover switch 7, and the negative side of a second DC power supply 6 whose positive side is connected to ground. When the power selector switch 7 is in the switching position shown in FIG. When it is in the position, it is connected to the second DC power source 6 and is negatively charged.
導電体1の一側には、そのソレノイドSへの励磁電流の
通断に応じて、プランジャを進退動作させる電磁シリン
ダ4が配設されている。電磁シリンダ4の前記プランジ
ャは、感電体lの中心部を、これの−側から厚さ方向に
貫通させてあり、その先端部には、導電体lの他側にお
いて、円板状の押圧部材4aが固着してある。電磁シリ
ンダ4は、そのソレノイドSに励磁電流が通電された場
合、この励磁電流に応じた電磁力を発生し、該電磁力に
よりプランジャを進出させて、押圧部材4aを絶縁体2
表面から突出させるべく動作し、該電磁シリンダ4の配
設位置は、ソレノイドSに励磁電流が通電されておらず
、前記プランジャがその退入位置にある場合、押圧部材
4aの一面が導電体lの他側における絶縁体2表面と路
面−をなすように設定してある。従って、電磁シリンダ
4の配設位置と反対側の絶縁体2の表面上に後述する如
く吸着、保持される被吸着物3には、ソレノイドSの励
磁に応じて電磁シリンダ4が発生する力が、絶縁体2の
表面からの離脱力として、押圧部材4aを介して作用す
ることになる。An electromagnetic cylinder 4 is disposed on one side of the conductor 1 and moves the plunger forward or backward in response to whether or not an excitation current is supplied to the solenoid S. The plunger of the electromagnetic cylinder 4 penetrates the center of the electric conductor l in the thickness direction from the negative side thereof, and has a disc-shaped pressing member at its tip on the other side of the electric conductor l. 4a is fixed. When an excitation current is applied to the solenoid S, the electromagnetic cylinder 4 generates an electromagnetic force corresponding to the excitation current, advances the plunger by the electromagnetic force, and presses the pressing member 4a against the insulator 2.
The electromagnetic cylinder 4 operates to protrude from the surface, and when the solenoid S is not energized with excitation current and the plunger is in its retracted position, one surface of the pressing member 4a is in contact with the conductor l. It is set so as to form a road surface with the surface of the insulator 2 on the other side. Therefore, the force generated by the electromagnetic cylinder 4 in response to the excitation of the solenoid S is applied to the object 3 that is attracted and held on the surface of the insulator 2 on the opposite side to the position where the electromagnetic cylinder 4 is disposed, as will be described later. , acts as a detachment force from the surface of the insulator 2 via the pressing member 4a.
また図中9は、本発明に係る静電チャックの動作を制御
する制御部であり、その出力信号は、電磁シリンダ4の
ソレノイドSと、電源切換スイッチ7とに与えられてい
る。ソレノイドSに制御部9からの出力信号が与えられ
た場合、ソレノイドSに励磁電流が通電され、電磁シリ
ンダ4が前記離脱力を発生するようになっており、また
、電源切換スイッチ7に制御部9からの出力信号が与え
られた場合、該スイッチ7は、第1図に示す一方の切換
位置から他方の切換位置に切換えられ、導電体1の接続
状態が、第1の直流電源5に接続された状態から、第2
の直流電源6に接続された状態に切換ねるようになって
いる。Reference numeral 9 in the figure is a control section that controls the operation of the electrostatic chuck according to the present invention, and its output signal is given to the solenoid S of the electromagnetic cylinder 4 and the power changeover switch 7. When the output signal from the control unit 9 is applied to the solenoid S, an excitation current is applied to the solenoid S, and the electromagnetic cylinder 4 generates the detachment force. 9, the switch 7 is switched from one switching position to the other switching position shown in FIG. The second
It is designed to switch to a state where it is connected to a DC power source 6.
さて、以上の如く構成された静電チャックにより被吸着
物3を吸着、保持する場合、まず、被吸着物3を、電磁
シリンダ4の配役位置と反対側の絶縁体2の表面上に、
導電体lと略同心をなす状態に載置する。このとき制御
部9は、ソレノイドSに出力信号を与えておらず、電磁
シリンダ4のプランジ中は退入状態にあるから、被吸着
物3は、絶縁体2の表面上に密接した状態に載置される
。Now, when attracting and holding the object 3 with the electrostatic chuck configured as above, first, the object 3 is placed on the surface of the insulator 2 on the opposite side to the position where the electromagnetic cylinder 4 is placed.
It is placed approximately concentrically with the conductor l. At this time, the control unit 9 is not giving an output signal to the solenoid S, and since the electromagnetic cylinder 4 is in the retracted state while plunging, the object 3 is placed closely on the surface of the insulator 2. be placed.
また、制御部9は、電源切換スイッチ7にも出力信号を
発しておらず、導電体lは、第1の直流電源5に接続さ
れ正に帯電した状態にある。さて、このように載置され
た被吸着物3の一部を、接地スイッチ8を介してアース
に接続し、該接地スイッチ8をオンすると、前記導電体
1と被吸着物3との間に静電力が発生し、被吸着物3は
この静電力により、絶縁体2を介して導電体1に吸着さ
れ、絶縁体2の表面上に保持される。本発明に係る静電
チャックをECRプラズマを利用した半導体製造装置に
用いる場合、被吸着物3は、これに照射されるプラズマ
を介して接地されることになるから、被吸着物3をアー
スに接続するための第1図に示す如き回路を設ける必要
はなく、被吸着物3は、これの表面へのプラズマ照射開
始と同時に絶縁体2表面上に吸着、保持される。Further, the control unit 9 does not issue an output signal to the power supply changeover switch 7, and the conductor 1 is connected to the first DC power supply 5 and is in a positively charged state. Now, when a part of the object 3 placed in this way is connected to the ground via the ground switch 8 and the ground switch 8 is turned on, a gap between the conductor 1 and the object 3 is created. Electrostatic force is generated, and the object to be attracted 3 is attracted to the conductor 1 via the insulator 2 due to this electrostatic force, and is held on the surface of the insulator 2. When the electrostatic chuck according to the present invention is used in a semiconductor manufacturing device using ECR plasma, the object 3 to be attracted is grounded through the plasma irradiated to it, so the object 3 to be attracted is grounded. There is no need to provide a circuit as shown in FIG. 1 for connection, and the object 3 to be attracted is attracted and held on the surface of the insulator 2 at the same time as the plasma irradiation to the surface of the object 3 starts.
このように吸着、保持された被吸着物3へのプラズマ照
射による成膜処理、エツチング処理等の所定の処理が終
了し、被吸着物3を取外す場合、前記処理の終了を適宜
の手段により検出した制御部9から、電源切換スイッチ
7に切換え信号が発せられると共に、電磁シリンダ4の
ソレノイドSに励磁信号が発せられ、その結果として、
導電体lは、第2の直流電源6に接続され、正に帯電し
た状態から負に帯電した状態に遷移し、感電体lと被吸
着物3との間に吸着時と逆方向の直流電圧が印加される
共に、被吸着物3は、電磁シリンダ4により発生され押
圧部材4aを介してその中央部に作用する離脱力により
、絶縁体2表面から離脱する方向に押圧される。When a predetermined process such as a film forming process by plasma irradiation or an etching process is completed on the target object 3 that has been attracted and held, and the target target 3 is removed, the end of the process is detected by an appropriate means. The control unit 9 issues a switching signal to the power selector switch 7, and also issues an excitation signal to the solenoid S of the electromagnetic cylinder 4. As a result,
The conductor l is connected to the second DC power supply 6, and changes from a positively charged state to a negatively charged state, and a DC voltage in the opposite direction to that at the time of attraction is generated between the electric conductor l and the object to be attracted 3. is applied, and the object to be attracted 3 is pressed in the direction of separation from the surface of the insulator 2 by a separation force generated by the electromagnetic cylinder 4 and acting on the central portion of the object through the pressing member 4a.
第2図は、導電体lと被吸着物3との間に、吸着時と逆
方向の直流電圧が印加された後における両者間の吸着力
の時間的変化の様子を示すグラフである。本図に示す如
く、逆電圧の印加開始直後において0.7kg程度であ
った吸着力が、20〜30秒間の逆電圧の印加によって
、0.1kg以下にまで低減されており、この時点にお
いて被吸着物3を離脱せしめることにより、被吸着物3
をわずかな力にて、容易にM脱させることができる。FIG. 2 is a graph showing how the attraction force between the conductor 1 and the object 3 changes over time after a DC voltage in the opposite direction to that during attraction is applied between the two. As shown in this figure, the adsorption force, which was about 0.7 kg immediately after the application of the reverse voltage started, was reduced to less than 0.1 kg by applying the reverse voltage for 20 to 30 seconds, and at this point, the adsorption force was reduced to less than 0.1 kg. By separating the adsorbed object 3, the adsorbed object 3
can be easily removed from the M with a small amount of force.
また第3図は、前記逆電圧の大きさを種々に変更すると
共に、該逆電圧の印加と共に、電磁シリンダ4を動作さ
せ、被吸着物3に300gの離脱力を加えた場合、この
離脱力により被吸着物3が離脱せしめられるまでに要す
る時間を示すグラフである。本図に示す如(、被吸着物
3の離脱に要する時間はわずかであり、例えば、600
Vの逆電圧を印加した場合、印加後5秒程度で被吸着物
3を離脱せしめることが可能であり、また、逆電圧が2
00V程度の低い電圧である場合においても、20秒以
下のわずかな時間にて被吸着物3を離脱せしめることが
可能であり、本発明に係る静電チャックにおいては、被
吸着物3を速やかに離脱させ得ることが明らかである。Further, FIG. 3 shows the detachment force when the magnitude of the reverse voltage is variously changed and the electromagnetic cylinder 4 is operated together with the application of the reverse voltage to apply a detachment force of 300 g to the object 3. 3 is a graph showing the time required until the adsorbed object 3 is separated by the following steps. As shown in this figure (the time required for the detachment of the adsorbed object 3 is short, for example, 600
When a reverse voltage of V is applied, it is possible to detach the attracted object 3 in about 5 seconds after application, and when the reverse voltage is 2
Even when the voltage is as low as 00V, it is possible to detach the object 3 in a short time of 20 seconds or less, and the electrostatic chuck according to the present invention can quickly remove the object 3. It is clear that it can be withdrawn.
。
電磁シリンダ4が発生する電磁力は、ソレノイドSへの
励磁電流の大きさに対応するから、被吸着物3の壊れ易
さの程度に応じて励磁電流を変更 −し、被吸着物3
に加わる離脱力を調節することにより、被吸着物3を破
壊することなく、確実に離脱させることが可能である。. Since the electromagnetic force generated by the electromagnetic cylinder 4 corresponds to the magnitude of the excitation current to the solenoid S, the excitation current is changed depending on the degree of breakability of the object 3 to be attracted.
By adjusting the detachment force applied to the object 3, it is possible to reliably detach the object 3 without destroying it.
なお、第2図及び第3図は、被吸着物3としてシリコン
半導体基板を用いた場合を示している。Note that FIGS. 2 and 3 show the case where a silicon semiconductor substrate is used as the object 3 to be attracted.
なお本実施例においては、被吸着物3に離脱力を加える
手段として電磁シリンダ4を用いたが、他の手段により
被吸着物3に離脱力を加える構成としてもよい。In this embodiment, the electromagnetic cylinder 4 is used as a means for applying a detachment force to the object 3 to be attracted, but a structure in which the detachment force is applied to the object 3 to be attracted may be adopted by other means.
また本実施例においては、被吸着物3を吸着する場合に
導電体lを第1の直流電源5に接続し、また被吸着物3
を離脱せしめる場合に第2の直流電源6に接続する構成
としているが、この接続状態が逆であってもよいことは
言うまでもない。Further, in this embodiment, when the object to be attracted 3 is attracted, the conductor l is connected to the first DC power source 5, and the object to be attracted 3 is connected to the first DC power source 5.
Although the configuration is such that it is connected to the second DC power supply 6 when disconnected, it goes without saying that this connection state may be reversed.
更に本実施例においては、被吸着物3の離脱時における
逆電圧の印加、及び離脱力の付与を、制御部9の動作に
より自動的に行う構成としているが、被吸着物への逆電
圧の印加は、電源切換スイッチ7の手動切換えにより行
う構成としてもよく、また被吸着物への離脱力の付与も
、ソレノイドSの励磁回路に手動スイッチを設け、該ス
イッチの操作により手動により行う構成としてもよい。Furthermore, in this embodiment, the application of a reverse voltage and the application of detachment force when the object 3 to be attracted is detached are automatically performed by the operation of the control section 9. The application may be performed by manually switching the power supply selector switch 7, and the application of the detachment force to the object to be attracted may also be performed manually by providing a manual switch in the excitation circuit of the solenoid S and operating the switch. Good too.
以上詳述した如く、本発明に係る静電チャックにおいて
は、被吸着物を離脱させる際に、これと導電体との間に
吸着時と逆方向の直流電圧を印加して、両者間に生じて
いる静電力を速やかに低減せしめているから、被吸着物
が離脱可能となるまでの時間が大幅に短縮され、これを
速やかに離脱せしめることが可能であり、また、前記直
流電圧の印加と共に、離脱力付与手段により被吸着物に
離脱方向への所定の力を加えているから、被吸着物を破
壊することなく、確実に離脱せしめることが可能となる
等、本発明は優れた効果を奏する。As detailed above, in the electrostatic chuck according to the present invention, when detaching an object to be attracted, a DC voltage is applied between the object and the conductor in the opposite direction to that during attraction, and a voltage is generated between the two. Since the electrostatic force caused by the adsorption is quickly reduced, the time required for the adsorbed object to become detachable is greatly shortened, and it is possible to quickly remove the adsorbed object. Since the detachment force applying means applies a predetermined force in the detachment direction to the object to be attracted, the present invention has excellent effects such as being able to reliably separate the object without destroying the object. play.
図面は本発明の一実施例を示すものであり、第1図は本
発明に係る静電チャックの構成を示す模式的断面図、第
2図は逆電圧の印加後における吸着力の時間的変化を示
すグラフ、第3図は離脱力付与手段を動作させた場合の
被吸着物の離脱に要する時間を示すグラフ、第4図は従
来の静電チャックにおける吸着力及び残留吸着力の大き
さを示すグラフである。
1・・・導電体 2・・・絶縁体 3・・・被吸着
物4・・・電磁シリンダ 5・・・第1の直流電源6
・・・第2の直流電源 7・・・電源切換スイッチ特
許 出願人 住友金属工業株式会社代理人 弁理士
河 野 登 夫第1図
第 4 図
第2図
第 3 図The drawings show one embodiment of the present invention, and FIG. 1 is a schematic cross-sectional view showing the structure of an electrostatic chuck according to the present invention, and FIG. 2 shows temporal changes in adsorption force after application of a reverse voltage. Figure 3 is a graph showing the time required for the object to be attracted to detach when the detachment force imparting means is operated, and Figure 4 is a graph showing the magnitude of the attraction force and residual attraction force in a conventional electrostatic chuck. This is a graph showing. 1... Conductor 2... Insulator 3... Object to be attracted 4... Electromagnetic cylinder 5... First DC power supply 6
...Second DC power supply 7...Power supply selector switch patent Applicant Sumitomo Metal Industries Co., Ltd. Agent Patent attorney Noboru Kono Figure 1 Figure 4 Figure 2 Figure 3
Claims (1)
体の表面に接触する被吸着物との間に直流電圧を印加し
、両者間に生じる静電力により、前記被吸着物を吸着、
保持する静電チャックにおいて、 前記被吸着物を離脱せしめる際に、該被吸 着物と前記導電体との間に、吸着時と逆方向の直流電圧
を印加する逆電圧印加手段を具備することを特徴とする
静電チャック。 2、絶縁体にて外側を被覆してある導電体と、前記絶縁
体の表面に密接する被吸着物との間に直流電圧を印加し
、両者間に生じる静電力により、前記被吸着物を吸着、
保持する静電チャックにおいて、 前記被吸着物を離脱せしめる際に、該被吸 着物と前記導電体との間に、吸着時と逆方向の直流電圧
を印加する逆電圧印加手段と、 該逆電圧印加手段の動作時に、前記被吸着 物に、前記導電体から離脱する方向への所定の力を加え
る離脱力付与手段と を具備することを特徴とする静電チャック。[Claims] 1. A DC voltage is applied between a conductor whose outer surface is covered with an insulator and an object to be attracted that is in contact with the surface of the insulator, and the electrostatic force generated between the two , adsorbing the object to be adsorbed;
The electrostatic chuck for holding the electrostatic chuck may include a reverse voltage applying means for applying a DC voltage in a direction opposite to that during attraction between the attraction object and the conductor when the attraction object is released. Features an electrostatic chuck. 2. A DC voltage is applied between a conductor whose outside is covered with an insulator and an object to be attracted that is in close contact with the surface of the insulator, and the electrostatic force generated between the two causes the object to be attracted. adsorption,
In the electrostatic chuck for holding, a reverse voltage applying means applies a DC voltage in a direction opposite to that during attraction between the attracted object and the conductor when the attracted object is released; and the reverse voltage An electrostatic chuck characterized by comprising a detachment force applying means for applying a predetermined force to the object to be attracted in a direction of detaching from the conductor when the applying means operates.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63005066A JP3015899B2 (en) | 1988-01-12 | 1988-01-12 | Detachment method of adsorbed object in electrostatic chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63005066A JP3015899B2 (en) | 1988-01-12 | 1988-01-12 | Detachment method of adsorbed object in electrostatic chuck |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01181544A true JPH01181544A (en) | 1989-07-19 |
JP3015899B2 JP3015899B2 (en) | 2000-03-06 |
Family
ID=11601015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63005066A Expired - Lifetime JP3015899B2 (en) | 1988-01-12 | 1988-01-12 | Detachment method of adsorbed object in electrostatic chuck |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3015899B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0451542A (en) * | 1990-06-19 | 1992-02-20 | Fujitsu Ltd | Electrostatically attracting method |
JPH04230051A (en) * | 1990-12-27 | 1992-08-19 | Kyocera Corp | Control device for electrostatic chuck |
JPH06326180A (en) * | 1993-05-17 | 1994-11-25 | Tokyo Electron Ltd | Releasing device for electrostatically attracted material |
CN105448793A (en) * | 2014-06-12 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878641U (en) * | 1981-11-25 | 1983-05-27 | 株式会社東芝 | electrostatic chuck |
JPS605539A (en) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | Electrostatic absorber |
-
1988
- 1988-01-12 JP JP63005066A patent/JP3015899B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5878641U (en) * | 1981-11-25 | 1983-05-27 | 株式会社東芝 | electrostatic chuck |
JPS605539A (en) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | Electrostatic absorber |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0451542A (en) * | 1990-06-19 | 1992-02-20 | Fujitsu Ltd | Electrostatically attracting method |
JP2506219B2 (en) * | 1990-06-19 | 1996-06-12 | 富士通株式会社 | Electrostatic adsorption method |
JPH04230051A (en) * | 1990-12-27 | 1992-08-19 | Kyocera Corp | Control device for electrostatic chuck |
JPH06326180A (en) * | 1993-05-17 | 1994-11-25 | Tokyo Electron Ltd | Releasing device for electrostatically attracted material |
CN105448793A (en) * | 2014-06-12 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
Also Published As
Publication number | Publication date |
---|---|
JP3015899B2 (en) | 2000-03-06 |
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